isc Product Specification INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF251 DESCRIPTION ·Drain Current –ID=30A@ TC=25℃ ·Drain Source Voltage: VDSS= 150V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.085Ω(Max) ·Nanosecond Switching Speed APPLICATIONS ·Switching power supplies ·Switching converters,motor driver,relay driver ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 150 V VGS Gate-Source Voltage ±20 V Drain Current-continuous@ TC=25℃ 30 A Total Dissipation@TC=25℃ 150 W Max. Operating Junction Temperature 150 ℃ -55~150 ℃ MAX UNIT 0.83 ℃/W 30 ℃/W ID Ptot Tj Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case Rth j-a Thermal Resistance,Junction to Ambient isc website：www.iscsemi.cn PDF pdfFactory Pro 1 www.fineprint.cn isc & iscsemi is registered trademark isc Product Specification INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF251 ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID=250µA VGS(TH) Gate Threshold Voltage VDS= VGS; ID=250µA RDS(ON) Drain-Source On-stage Resistance IGSS MIN TYPE MAX 150 UNIT V 2 4 V VGS=10V; ID=16A 0.085 Ω Gate Source Leakage Current VGS=±20V;VDS=0 ±100 nA IDSS Zero Gate Voltage Drain Current VDS=150V; VGS=0 250 uA VSD Diode Forward Voltage IS=30A; VGS=0 2.0 V Ciss Input Capacitance 2000 3000 300 500 800 1200 VDS=25V; Crss Reverse Transfer Capacitance VGS=0V; pF fT=1MHz Coss tr td(on) Output Capacitance Rise Time Turn-on Delay Time 100 ID=16A; 35 VDD=95V; tf td(off) Fall Time Turn-off Delay Time isc website：www.iscsemi.cn PDF pdfFactory Pro RL=4.7Ω ns 100 125 2 www.fineprint.cn isc & iscsemi is registered trademark