ISC IRF251 Nanosecond switching speed Datasheet

isc Product Specification
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
IRF251
DESCRIPTION
·Drain Current –ID=30A@ TC=25℃
·Drain Source Voltage: VDSS= 150V(Min)
·Static Drain-Source On-Resistance
: RDS(on) =0.085Ω(Max)
·Nanosecond Switching Speed
APPLICATIONS
·Switching power supplies
·Switching converters,motor driver,relay driver
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage (VGS=0)
150
V
VGS
Gate-Source Voltage
±20
V
Drain Current-continuous@ TC=25℃
30
A
Total Dissipation@TC=25℃
150
W
Max. Operating Junction Temperature
150
℃
-55~150
℃
MAX
UNIT
0.83
℃/W
30
℃/W
ID
Ptot
Tj
Tstg
Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal Resistance,Junction to Case
Rth j-a
Thermal Resistance,Junction to Ambient
isc website:www.iscsemi.cn
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1
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isc & iscsemi is registered trademark
isc Product Specification
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
IRF251
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS
Drain-Source Breakdown Voltage
VGS=0; ID=250µA
VGS(TH)
Gate Threshold Voltage
VDS= VGS; ID=250µA
RDS(ON)
Drain-Source On-stage Resistance
IGSS
MIN
TYPE
MAX
150
UNIT
V
2
4
V
VGS=10V; ID=16A
0.085
Ω
Gate Source Leakage Current
VGS=±20V;VDS=0
±100
nA
IDSS
Zero Gate Voltage Drain Current
VDS=150V; VGS=0
250
uA
VSD
Diode Forward Voltage
IS=30A; VGS=0
2.0
V
Ciss
Input Capacitance
2000
3000
300
500
800
1200
VDS=25V;
Crss
Reverse Transfer Capacitance
VGS=0V;
pF
fT=1MHz
Coss
tr
td(on)
Output Capacitance
Rise Time
Turn-on Delay Time
100
ID=16A;
35
VDD=95V;
tf
td(off)
Fall Time
Turn-off Delay Time
isc website:www.iscsemi.cn
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RL=4.7Ω
ns
100
125
2
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isc & iscsemi is registered trademark
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