TI1 LM5150QRUMRQ1 Wide vin automotive low iq boost controller Datasheet

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LM5150-Q1
SNVSAP6 – SEPTEMBER 2017
LM5150-Q1 Wide VIN Automotive Low IQ Boost Controller
1 Features
3 Description
•
The LM5150-Q1 device is a wide input range
automatic boost controller. The device is suitable for
use as a pre-boost converter which maintains the
output voltage from a vehicle battery during
automotive cranking or from a back-up battery during
the loss of vehicle battery.
1
•
•
•
•
•
•
•
•
•
•
•
•
•
AEC-Q100 Qualified:
– Device Temperature Grade 1: –40°C to
+125°C Ambient Operating Temperature
Range
– Device HBM ESD Classification Level 2
– Device CDM ESD Classification Level C4B
Wide VIN Input Range From 1.5 V to 42 V When
VOUT ≥ 5 V (65-V Absolute Maximum)
Low Shutdown Current (IQ ≤ 5 µA)
Low Standby Current (IQ ≤ 15 µA)
Four Programmable Output Voltage Options and
Two Selectable Configurations
– 6.8 V, 7.5 V, 8.5 V, or 10.5 V
– Start-Stop or E-Call Configurations
Adjustable Switching Frequency From 220 kHz to
2.3 MHz
Automatic Wake-Up and Standby Mode Transition
Optional Clock Synchronization
Boost Status Indicator
1.5-A Peak MOSFET Gate Driver
Adjustable Cycle-by-Cycle Current Limit
Thermal Shutdown
16-Pin WQFN With Wettable Flanks
Create a Custom Design Using the LM5150-Q1
With the WEBENCH® Power Designer
The LM5150-Q1 switching frequency is programmed
by a resistor from 220 kHz to 2.3 MHz. Fast switching
(≥ 2.2-MHz) minimizes AM band interference and
allows for a small solution size and fast transient
response.
The LM5150-Q1 operates in low IQ standby mode
when the input or output voltage is above the preset
standby thresholds and automatically wakes up when
the output voltage drops below the preset wake-up
threshold.
The device transients in and out of the low IQ standby
mode to extend battery life at light load. A single
resistor programs the target output regulation voltage
as well as the configuration. Additional features
include low shutdown current, boost status indicator,
adjustable cycle-by-cycle current limit, and thermal
shutdown.
Device Information(1)
PART NUMBER
LM5150-Q1
PACKAGE
WQFN (16)
BODY SIZE (NOM)
4.00 mm × 4.00 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
2 Applications
•
•
•
Automotive Start-Stop System
Automotive Emergency Call System
Battery-Powered Boost Converters
Typical Application Circuit
VSUPPLY
Efficiency (VLOAD= 6.8 V, FSW= 440 kHz)
VLOAD
100
LO
VIN
CS
AGND
PGND
VOUT
EN
STATUS
Efficiency (%)
95
90
85
80
LM5150
VSUPPLY=5.5V
VSUPPLY=4.5V
VSUPPLY=3.5V
VSUPPLY=2.5V
COMP
SYNC
75
RT
VSET
VCC
AVCC
70
0
0.3
0.6
0.9
1.2 1.5 1.8
Load Current (A)
2.1
2.4
2.7
3
D008
Copyright © 2017, Texas Instruments Incorporated
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
LM5150-Q1
SNVSAP6 – SEPTEMBER 2017
www.ti.com
Table of Contents
1
2
3
4
5
6
7
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
3
4
6.1
6.2
6.3
6.4
6.5
6.6
4
4
5
5
5
8
Absolute Maximum Ratings ......................................
ESD Ratings..............................................................
Recommended Operating Conditions.......................
Thermal Information ..................................................
Electrical Characteristics...........................................
Typical Characteristics ..............................................
8
8.1 Application Information............................................ 21
8.2 Typical Application ................................................. 24
8.3 System Examples ................................................... 31
9 Power Supply Recommendations...................... 33
10 Layout................................................................... 33
10.1 Layout Guidelines ................................................. 33
10.2 Layout Example .................................................... 34
11 Device and Documentation Support ................. 35
11.1
11.2
11.3
11.4
11.5
11.6
Detailed Description ............................................ 10
7.1
7.2
7.3
7.4
Overview .................................................................
Functional Block Diagram .......................................
Feature Description.................................................
Device Functional Modes........................................
Application and Implementation ........................ 21
10
11
11
17
Device Support......................................................
Receiving Notification of Documentation Updates
Community Resources..........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
35
35
35
35
35
35
12 Mechanical, Packaging, and Orderable
Information ........................................................... 36
4 Revision History
2
DATE
REVISION
NOTES
September 2017
*
Initial release.
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5 Pin Configuration and Functions
SYNC
1
STATUS
2
VSET
RT
COMP
AP
VIN
RUM Package
16-Pin WQFN
Top View
16
15
14
13
AP
12
CS
11
AGND
EP
VOUT
4
9
LO
AP
5
6
7
8
NC
PGND
AVCC
10
NC
3
PVCC
EN
AP
Copyright © 2017, Texas Instruments Incorporated
Pin Functions
PIN
NO.
NAME
I/O (1)
DESCRIPTION
1
SYNC
I
External synchronization clock input pin. The internal oscillator is synchronized to an external
clock by applying a pulse signal into the SYNC pin in the start-stop configuration. Connect
directly to ground if not used or in emergency call configuration. Maximum duty cycle limit
can be programmed by controlling the external synchronization clock frequency.
2
STATUS
O
Status indicator with an open-drain output stage. Internal pulldown switch holds the pin low
when the device is not boosting. The pin can be left floating if not used.
3
EN
I
Enable pin. If EN is below 1 V, the device is in shutdown mode. The pin must be raised
above 2 V to enable the device. Connect directly to VOUT pin for an automatic boost.
4
VOUT
I/P
Boost output voltage-sensing pin and input to VCC regulator. Connect to the output of the
boost converter.
5
PVCC
O/P
Output of the VCC bias regulator. Decouple locally to PGND using a low-ESR or low-ESL
ceramic capacitor located as close to the device as possible.
6
NC
—
No internal electrical connection. Leave the pin floating or connect directly to ground.
7
AVCC
I/P
Analog VCC supply input. Decouple locally to AGND using 0.1-µF low-ESR or low-ESL
ceramic capacitor located as close to the device as possible. Connect to the PVCC pin
through 10-Ω resistor.
8
NC
—
No internal electrical connection. Leave the pin floating or connect directly to ground.
9
LO
O
N-channel MOSFET gate drive output. Connect to the gate of the N-channel MOSFET
through a short, low inductance path.
10
PGND
G
Power ground pin. Connect to the ground connection of the sense resistor through a wide
and short path.
11
AGND
G
Analog ground pin. Connect to the analog ground plane through a wide and short path.
12
CS
I
Current sense input pin. Connect to the positive side of the current sense resistor through a
short path.
13
COMP
O
Output of the internal transconductance error amplifier. The loop compensation components
must be connected between this pin and AGND.
14
RT
I
Switching frequency setting pin. The switching frequency is programmed by a single resistor
between RT and AGND.
(1)
G = GROUND, I = INPUT, O = OUTPUT, P = POWER
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Pin Functions (continued)
PIN
I/O (1)
DESCRIPTION
VSET
I
Configuration selection and VOUT regulation target programming pin. During initial power on,
a resistor between the VSET pin and AGND configures the VOUT regulation target and the
configuration.
16
VIN
I
Boost input voltage sensing pin. Connect to the input supply of the boost converter.
—
EP
—
Exposed pad of the package. No internal electrical connection to silicon die. The EP is
electrically connected to anchor pads. The EP must be connected to the large ground copper
plain to reduce thermal resistance.
—
AP
—
Anchor pad of the package. No internal electrical connection to silicon die. The AP is
electrically connected to the EP. The AP can be left floating or soldered to the ground
copper.
NO.
NAME
15
6 Specifications
6.1 Absolute Maximum Ratings
Over the recommended operating junction temperature range of –40°C to 150°C (unless otherwise noted) (1)
MIN
MAX
VIN to AGND
-0.3
65
VOUT to AGND
-0.3
65
EN to AGND
-0.3
65
RT to AGND (2)
-0.3
AVCC+0.3
SYNC to AGND
-0.3
7
VSET to AGND
-0.3
7
CS to AGND (DC)
-0.3
AVCC+0.3
CS to AGND (40ns transient)
-1.0
AVCC+0.3
CS to AGND (20ns transient)
-2.0
AVCC+0.3
PGND to AGND
-0.3
0.3
LO to AGND (DC)
-0.3
PVCC+0.3
LO to AGND (40ns transient)
-1.0
PVCC+0.3
LO to AGND (20ns transient)
-2.0
PVCC+0.3
STATUS to AGND (3)
-0.3
65
COMP to AGND (2)
-0.3
AVCC+0.3
AVCC to AGND
-0.3
7
PVCC to AVCC
-0.3
0.3
TJ
JunctionTemperature (4)
-40
150
℃
Tstg
Storage Temperature
-55
150
℃
Input
Output
(1)
(2)
(3)
(4)
UNIT
V
V
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions . Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
The pin voltage is clamped by an internal circuit, and is not specified to have an external voltage applied.
STATUS can go below ground during the STATUS low-to-high transition. The negative voltage on STATUS during this transition is
clamped by an internal diode and it does not damage the device.
High junction temperatures degrade operating lifetimes. Operating lifetime is de-rated for junction temperatures greater than 125°C.
6.2 ESD Ratings
MIN
MAX
–2000
2000
Corner pins
–750
750
Other pins
–500
500
Human body model (HBM), per AEC Q100-002 (1)
V(ESD)
(1)
4
Electrostatic discharge
Charged device model
(CDM), per AEC Q100-011
UNIT
V
AEC Q100-002 indicates HBM stressing is done in accordance with the ANSI/ESDA/JEDEC JS-001 specification.
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6.3 Recommended Operating Conditions
Over the recommended operating junction temperature range of –40°C to 150°C (unless otherwise specified) (1)
MIN
NOM
MAX
UNIT
VVIN
Boost input voltage sense
1.5
42
V
VVOUT
Boost output voltage sense (2)
5
42
V
VEN
EN input
0
42
V
VPVCC
PVCC Voltage (3)
5.5
V
VSYNC
SYNC Input
0
5.5
V
VCS
Current sense Input
0
0.3
FSW
Typical switching srequency
220
2300
kHz
FSYNC
Synchronization pulse frequency
220
2300
kHz
TJ
Operating junction temperature (4)
–40
150
°C
(1)
(2)
(3)
(4)
4.5
5
V
Operating Ratings are conditions under the device is intended to be functional. For specifications and test conditions, see Electrical
Characteristics.
The device requires minimum 5V at VOUT pin to start up
VPVCC should be less than VVOUT + 0.3 V
High junction temperatures degrade operating lifetimes. Operating lifetime is derated for junction temperatures greater than 125°C.
6.4 Thermal Information
LM5150-Q1
THERMAL METRIC (1)
RUM (WQFN)
UNIT
16 PINS
RθJA
Junction-to-ambient thermal resistance
44.4
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
33.4
°C/W
RθJB
Junction-to-board thermal resistance
19.5
°C/W
ΨJT
Junction-to-top characterization parameter
0.5
°C/W
ΨJB
Junction-to-board characterization parameter
19.3
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
2
°C/W
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
6.5 Electrical Characteristics
Typical values correspond to TJ = 25°C. Minimum and maximum limits apply over TJ = -40°C to 125°C. Unless otherwise
stated, VVOUT = 6.8 V, RT = 9.09 kΩ
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
5
12
µA
SUPPLY CURRENT
ISHUTDOWN(VOUT)
VOUT shutdown current
VVOUT = 12 V, VEN = 0 V
ISTANDBY(VOUT)
VOUT standby current (PVCC in
regulation, STATUS is low)
VVOUT = 12 V, VEN = 3.3 V, RSET =
90.9 kΩ
15
25
µA
IWAKEUP(VOUT)
VOUT operating current (exclude
current into RT resistor)
VVOUT = 10.5 V, VEN = 2.5 V, nonswitching, RT = 9.09 kΩ
1.2
2.0
mA
ISHUTDOWN(VIN)
VIN shutdown current
VVIN = 12 V, VEN = 0 V
0.1
0.5
µA
ISTANDBY(VIN)
VIN standby current
VVIN = 12 V, VEN = 3.3 V, RSET = 29.4
kΩ
0.1
0.5
µA
IWAKEUP(VIN)
VIN operating current
VVIN = 10.5 V, VEN = 2.5 V, nonswitching, RT = 9.09 kΩ
30
45
µA
VVCC-REG-NOLOAD
PVCC regulation
VVOUT = 6.0 V, No load, wake-up
mode
4.75
5
5.25
V
VVCC-REG-FULLLOAD
PVCC regulation
VVOUT = 5.0 V, IPVCC = 70 mA
4.5
4.8
VVCC-UVLO-RISING
AVCC UVLO threshold
AVCC rising
4.1
4.3
4.5
V
VVCC-UVLO-FALLING
AVCC UVLO threshold
AVCC falling
3.9
4.1
4.3
V
VCC REGULATOR
V
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Electrical Characteristics (continued)
Typical values correspond to TJ = 25°C. Minimum and maximum limits apply over TJ = -40°C to 125°C. Unless otherwise
stated, VVOUT = 6.8 V, RT = 9.09 kΩ
PARAMETER
TEST CONDITIONS
MIN
VVCC-UVLO-HYS
AVCC UVLO hysteresis
IVCC-CL
PVCC sourcing current limit
VPVCC = 0 V, wake-up mode
VEN-RISING
Enable threshold
EN rising
VEN-FALLING
Enable threshold
EN falling
IEN
EN bias current
VEN = 42 V
VVOUT-REG
VOUT regulation target
RSET = 29.4 kΩ or 90.9 kΩ
6.66
VVOUT-WAKEUP
VOUT wake-up threshold
(VVOUT-REG+3%)
RSET = 29.4 kΩ or 90.9 kΩ, VOUT
falling
VVOUT-STANDBY1
VOUT standby threshold
(VVOUT-REG+6%, EC config)
VVOUT-STATUS-OFF
TYP
MAX
0.2
UNIT
V
75
mA
ENABLE
1.7
2
V
100
nA
6.80
6.98
V
6.83
7.00
7.14
V
RSET = 90.9 kΩ, VOUT rising
7.02
7.21
7.35
V
VOUT status off threshold
(VVOUT-REG +12%, EC config)
RSET = 90.9 kΩ, VOUT rising
7.42
7.62
7.81
V
VVOUT-STANDBY2
VOUT standby threshold
(VVOUT-REG+24%, SS config)
RSET = 29.4 kΩ, VOUT rising
8.22
8.43
8.60
V
VVIN-STANDBY
VIN standby threshold
(VVOUT-WAKEUP + 1.0 V, SS config)
RSET = 29.4 kΩ, VIN rising
7.82
8.00
8.19
V
VVOUT-REG
VOUT regulation target
RSET = 19.1 kΩ or 71.5 kΩ
7.37
7.50
7.67
V
VVOUT-WAKEUP
VOUT wake-up threshold
(VVOUT-REG+3%)
RSET = 19.1 kΩ or 71.5 kΩ, VOUT
falling
7.52
7.73
7.88
V
VVOUT-STANDBY1
VOUT standby threshold
(VVOUT-REG+6%, EC config)
RSET = 71.5 kΩ, VOUT rising
7.74
7.95
8.11
V
VVOUT-STATUS-OFF
VOUT status off threshold
(VVOUT-REG +12%, EC config)
RSET = 71.5 kΩ, VOUT rising
8.19
8.40
8.61
V
VVOUT-STANDBY2
VOUT standby threshold
(VVOUT-REG+24%, SS config)
RSET = 19.1 kΩ, VOUT rising
9.07
9.30
9.46
V
VVIN-STANDBY
VIN standby threshold
(VVOUT-WAKEUP + 1.0 V, SS config)
RSET = 19.1 kΩ, VIN rising
8.50
8.73
8.93
V
VVOUT-REG
VOUT regulation target
RSET = 9.53 kΩ or 54.9 kΩ
8.37
8.50
8.69
V
VVOUT-WAKEUP
VOUT wake-up threshold
(VVOUT-REG+3%)
RSET = 9.53 kΩ or 54.9 kΩ, VOUT
falling
8.52
8.76
8.93
V
VVOUT-STANDBY1
VOUT standby threshold
(VVOUT-REG+6%, EC config)
RSET = 54.9 kΩ, VOUT rising
8.78
9.01
9.19
V
VVOUT-STATUS-OFF
VOUT status off threshold
(VVOUT-REG +12%, EC config)
RSET = 54.9 kΩ, VOUT rising
9.28
9.52
9.75
V
VVOUT-STANDBY2
VOUT standby threshold
(VVOUT-REG+24%, SS config)
RSET = 9.53 kΩ, VOUT rising
10.29
10.54
10.72
V
VVIN-STANDBY
VIN standby threshold
(VVOUT-WAKEUP + 1.0 V, SS config)
RSET = 9.53 kΩ, VIN rising
9.50
9.76
9.98
V
VVOUT-REG
VOUT regulation target
RSET = GND or 41.2 kΩ
10.31
10.50
10.75
V
VVOUT-WAKEUP
VOUT wake-up threshold
(VVOUT-REG+3%)
RSET = GND or 41.2 kΩ, VOUT falling
10.53
10.82
11.02
V
VVOUT-STANDBY1
VOUT standby threshold
(VVOUT-REG+6%, EC config)
RSET = 41.2 kΩ, VOUT rising
10.84
11.13
11.33
V
1
1.3
V
6.8-V SETTING
7.5-V SETTING
8.5-V SETTING
10.5-V SETTING
6
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Electrical Characteristics (continued)
Typical values correspond to TJ = 25°C. Minimum and maximum limits apply over TJ = -40°C to 125°C. Unless otherwise
stated, VVOUT = 6.8 V, RT = 9.09 kΩ
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
VVOUT-STATUS-OFF
VOUT status off threshold
(VVOUT-REG +12%, EC config)
RSET = 41.2 kΩ, VOUT rising
11.46
11.76
12.04
V
VVOUT-STANDBY2
VOUT standby threshold
(VVOUT-REG+24%, SS config)
RSET = GND, VOUT rising
12.70
13.02
13.24
V
VVIN-STANDBY
VIN standby threshold
(VVOUT-WAKEUP + 1.0 V, SS config)
RSET = GND, VIN rising
11.47
11.82
12.11
V
RT
VRT-REG
RT regulation voltage
1.2
V
CLOCK SYNCHRONIZATION
VSYNC-RISING
SYNC rising threshold
VSYNC-FALLING
SYNC falling threshold
2.0
0.4
2.4
1.5
V
V
PULSE WIDTH MODULATION AND OSCILLATOR
FSW1
Switching frequency
RT = 93.1 kΩ
204
239
270
kHz
FSW2
Switching frequency
RT = 9.09 kΩ
2100
2300
2500
kHz
FSW3
Switching frequency
RT = 9.09 kΩ,
FSYNC = 2.0 MHz
TON-MIN
Forced minimum on-time
SS config, VCOMP = 0 V
DMIN
DMAX
Minimum duty cycle limit (EC config)
Maximum duty cycle limit
2000
30
50
kHz
70
ns
RT = 9.09 kΩ, VVIN = 1.5 V, VVOUT =
6.8 V, VCOMP = 0 V
60
%
RT = 93.1 kΩ, VVIN = 8.4 V, VVOUT =
10.5 V, VCOMP = 0 V
16
%
SS config, RT = 9.09 kΩ
83
87
91.5
%
EC config, RT = 93.1 kΩ
83
87
91.5
%
VVIN = 5.1 V, VVOUT = 6.8 V at 25%
DC
102
120
138
mV
VVIN = 3.4 V, VVOUT = 6.8 V at 50%
DC
102
120
138
mV
VVIN = 1.7 V, VVOUT = 6.8 V at 75%
DC
102
120
138
mV
CURRENT SENSE
VCSTH
Current limit threshold (CS-AGND) (1)
ERROR AMPLIFIER
Gm
Transconductance
2
COMP souring current
VCOMP = 0 V
312
COMP sinking current
VCOMP = 1.5 V
120
COMP clamp voltage
2.4
COMP to PWM offset
mA/V
µA
µA
2.6
V
0.3
V
STATUS
Low-state voltage drop
1-mA sinking
STATUS rise to LO delay
5-kΩ pullup to 5 V
0.1
High-state voltage drop
50-mA sinking
0.075
V
Low-state voltage drop
50-mA sourcing
0.055
V
175
°C
15
°C
4
5
V
6
µs
MOSFET DRIVER
THERMAL SHUTDOWN (TSD)
Thermal shutdown threshold
Temperature rising
Thermal shutdown hysteresis
(1)
VCL at the current limit comparator input is 10 x VCSTH
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6.6 Typical Characteristics
17
126
Peak Current in Current Limit (A)
16.5
16
Current Limit Threshold at CS (mV)
6.8V output
7.5V output
8.5V output
10.5V output
15.5
15
14.5
14
13.5
13
2
3
4
5
6
7
Supply Voltage (V)
8
9
6.8V output
7.5V output
8.5V output
10.5V output
124
122
120
118
116
114
20
10
30
40
D001
Figure 1. Peak Inductor Current vs Supply Voltage
(FSW = 250 kHz, RS = 8 mΩ)
50
60
Duty Cycle (%)
70
80
D002
Figure 2. Current Limit Threshold at CS vs Duty Cycle
6
6
5.5
5
5
4.5
4
VPVCC (V)
VPVCC (V)
4
3
2
3.5
3
2.5
2
1.5
1
1
0.5
0
0
0
20
40
60
80
IPVCC (mA)
100
120
140
0
Figure 3. VPVCC vs IPVCC (VOUT = 6 V)
100
2500
90
Duty Cycle Limit in EC mode (%)
2750
2000
Frequency (kHz)
1
1.5
2
2.5 3 3.5
VVOUT (V)
4
4.5
5
5.5
6
D004
Figure 4. VPVCC vs VVOUT (EN = 3.3 V, IPVCC = 10 mA, VOUT
Rising)
2250
1750
1500
1250
1000
750
500
VVOUT=6.8V
VVOUT=7.5V
VVOUT=8.5V
VVOUT=10.5V
80
70
60
50
40
30
20
10
250
0
0
0
10
20
30
40
50
60
RT (k:)
70
Figure 5. Frequency vs RT
8
0.5
D003
80
90
100
0
1
D005
2
3
4
5
6
7
VVIN (V)
8
9
10
11
12
D006
Figure 6. Duty Cycle Limit in EC Configuration vs VVIN
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Typical Characteristics (continued)
100
20
18
95
16
Efficiency (%)
IVOUT (uA)
14
Shutdown
Standby
12
10
8
6
4
90
85
80
VSUPPLY=5.5V
VSUPPLY=4.5V
VSUPPLY=3.5V
VSUPPLY=2.5V
75
2
0
-60
70
-40
-20
0
20 40 60 80
Temperature (°C)
100 120 140 160
0
0.3
D007
Figure 7. IVOUT vs Temperature
0.6
0.9
1.2 1.5 1.8
Load Current (A)
2.1
2.4
2.7
3
D008
Figure 8. Efficiency vs Load Current
(VLOAD = 6.8 V, FSW = 440 kHz, SS Configuration)
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7 Detailed Description
7.1 Overview
The LM5150-Q1 device is a wide input range automotive boost controller designed for automotive start-stop or
emergency-call applications. The device can maintain the output voltage from a vehicle battery during automotive
cranking or from a back-up battery during the loss of vehicle battery. The wide input range of the device covers
automotive load dump transient. The control method is based upon peak current mode control.
To extend the battery life time, the LM5150-Q1 features a low IQ standby mode with automatic wake-up and
standby control. The device stays in the low IQ standby mode when the boost operation is not required, and
automatically enters the wake-up mode when the output voltage drops below the preset wake-up threshold. High
value feedback resistors are included inside the device to minimize leakage current in the low IQ standby mode.
The LM5150-Q1 operates in one of two selectable configurations when waking up. In Start-Stop configuration
(SS configuration), the device runs at a fixed switching frequency without any pulse skipping until entering into
the standby mode, which helps to have a fixed EMI spectrum. In Emergency-Call configuration (EC
configuration), the device will skip pulses as it automatically alternates between low IQ standby mode and wakeup mode to extend the battery life in light load conditions.
The LM5150-Q1 switching frequency is programmable from 220 kHz to 2.3 MHz. Fast switching (≥ 2.2-MHz)
minimizes AM band interference and allows for a small solution size and fast transient response. A single resistor
at the VSET pin programs the target output regulation voltage as well as the configuration. This eliminates the
need for an external feedback resistor divider which enables low IQ operation. The device also features clock
synchronization in the SS configuration, low quiescent current in shutdown mode, a boost status indicator,
adjustable cycle-by-cycle current will limit, and thermal shutdown protection.
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7.2 Functional Block Diagram
VSUPPLY
D1
VLOAD
LM
COUT
CIN
RLOAD
STATUS
VIN
(SS Config)
VIN_STANDBY
StatusB
VSET
Standby
RSET
S
Q
R
Q
S
±
VOUT-STANDBY
FB
VOUT
±
VO_WAKE
REF
+
(EC Config)
VO_STATUS_OFF
StatusB
±
AVCC
REF
R
Q
CAVCC
+
+
2.0 V/1.0 V
+
Wakeup
VOUT
EN
±
REF
VO_STANDBY
VSET
Ready
POWER
ON
VOLTAGE
SELECT
Q
+
VIN_STANDBY (SS Config)
VOUT
Enable
±
PVCC
Ready
VCC_OK
LM5150
TSD
VOUT
VCL + 0.3 V
±
VCC
Regulator
Enable
Standby
VCC_OK
C/L
+
S
Q
R
Q
RAVCC
CPVCC
VCC
UVLO
LO
VCS_OFFSET
Wakeup
FB
+
ISLOPE
±
±
VCS_OFFSET
+
PGND
AGND
30 uA peak
DMAX/Forced_Toff
CLOCK
GENERATOR
GM AMP
Q1
DMIN/Forced_Ton
C/L
+
COMP
RCOMP
RT
SYNC
±
REF
PWM
+
A = 10
±
CS
RSL
(optional)
RF
2k
CF
RS
0.3 V
RT
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CCOMP
7.3 Feature Description
7.3.1 Enable (EN Pin)
When the EN pin voltage is less than 1 V, the LM5150-Q1 is in shutdown mode with all other functions disabled.
To turn on the internal VCC regulator and begin start-up sequence, the EN pin voltage must be greater than 2 V.
If the EN pin is controlled by user input, it is recommended to supply a voltage greater than 3 V at the EN pin. If
the EN pin is not controlled by user input, connect the EN pin to the VOUT pin directly. See Device Functional
Modes for more detailed information.
7.3.2 High Voltage VCC Regulator (PVCC, AVCC Pin)
The LM5150-Q1 contains an internal high voltage VCC regulator. The VCC regulator turns on when the EN pin
voltage is greater than 2 V. The VCC regulator is sourced from the VOUT pin and provides 5 V (typical) bias
supply for the N-channel MOSFET driver and other internal circuits.
The VCC regulator sources current into the capacitor connected to the PVCC pin with a minimum of 75-mA
capability when the LM5150-Q1 is in the wake-up mode and during the device configuration period. The
maximum sourcing capability is decreased to 17 mA in standby mode. The recommended PVCC capacitor is 4.7
µF to 10 µF. In normal operation, the PVCC pin voltage is either 5 V or VVOUT + 0.3 V, whichever is lower.
The AVCC pin is the analog bias supply input of the LM5150-Q1. The recommended AVCC capacitor is 0.1-μF.
Connect to the PVCC pin through 10-Ω resistor.
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Feature Description (continued)
7.3.3 Power-On Voltage Selection (VSET Pin)
During initial power on, the VOUT regulation target and the configuration are configured by a resistor connected
between the VSET and the AGND pins. The configuration starts when the EN pin voltage is greater than 2 V and
the AVCC voltage crosses the AVCC UVLO threshold, and requires typically 50 µs to finish. To reset and
reconfigure, EN should be toggled below 1 V or AVCC/VOUT must be fully discharged.
EN
Wake-up or standby
Configuration
AVCC
Shutdown
Configuration
Shutdown
Wake-up or standby
VCC
UVLO
50 us
50 us
Figure 9. Power-On Voltage Selection
The VOUT regulation target can be programmed to 6.8 V, 7.5 V, 8.5 V, or 10.5 V with the appropriate resistor
with 5% tolerance. The configuration can be selected as either SS or EC configuration. The LM5150-Q1 will not
switch during the 50-µs configuration time.
Table 1. VSET Resistors (1)
CONFIGURATION
(1)
EMERGENCY-CALL
START-STOP
VOUT regulation target
6.8 V
7.5 V
8.5 V
10.5 V
6.8 V
7.5 V
8.5 V
10.5 V
RSET [Ω]
90.9k
71.5k
54.9k
41.2k
29.4k
19.1k
9.53k
Ground
If other output regulation targets are required, contact the sales office/distributors for availability.
7.3.4 Switching Frequency (RT Pin)
The switching frequency of the LM5150-Q1 is set by a single RT resistor connected between the RT and the
AGND pins. The resistor value to set the switching frequency (FSW) is calculated using Equation 1.
RT
2.233 u 1010
FSW _ RT
619 :
TYPICAL
(1)
The RT pin is regulated to 1.2 V by the internal RT regulator during wake-up.
7.3.5 Clock Synchronization (SYNC Pin in SS Configuration)
In SS configuration, the switching frequency of the LM5150-Q1 can be synchronized to an external clock by
directly applying a pulse signal to the SYNC pin. The internal clock of the LM5150-Q1 is synchronized at the
rising edge of the external clock. The device ignores the rising edge input during forced off-time.
The external synchronization pulse must be greater than the 2.4 V in the high logic state and must be less than
0.4 V in the low logic state. The duty cycle of the external synchronization pulse is not limited, but the minimum
pulse width should be greater than 100 ns. Because the maximum duty cycle limit and the peak current limit
threshold are affected by synchronizing the switching frequency to an external synchronization pulse, take extra
care when using the clock synchronization function. See the Maximum Duty Cycle Limit, Minimum Input Supply
Voltage and Current Limit (CS Pin) section for more detailed information.
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If the boost converter’s minimum input supply voltage is greater than ¼ of the VOUT regulation target (VVOUTREG), the frequency of the external synchronization pulse (FSYNC) should be within +15% and –15% of the typical
free-running switching frequency (FSW(TYPICAL))
0.85 ´ FSW_RT(TYPICAL) £ FSYNC £ 1.15 ´ FSW_RT(TYPICAL)
(2)
In this range, a maximum 1:4 (VSUPPLY:VLOAD) step-up ratio is allowed.
A higher step-up ratio can be achieved by supplying a lower frequency synchronization pulse. 1:5 step-up ratio
can be achieved by selecting FSYNC within –25% and –15% of the FSW_RT(TYPICAL).
0.75 ´ FSW_RT(TYPICAL) £ FSYNC £ 0.85 ´ FSW_RT(TYPICAL)
(3)
In this range, a maximum 1:5 (VSUPPLY:VLOAD) step-up ratio is allowed.
7.3.6 Current Sense, Slope Compensation, and PWM (CS Pin)
The LM5150-Q1 features low-side current sense amplifier with a gain of 10, and provides an internal slope
compensation ramp to prevent sub-harmonic oscillation at high duty cycle. The device generates the slope
compensation ramp using a sawtooth current source with a slope of 30 µA × FSW (typical). This current flows
through an internal 2-kΩ resistor and out of the CS pin. The slope compensation ramp is determined by the RT
resistor and is 60 mV × FSW (typical) at the input of the current sense amplifier and 600 mV × FSW (typical) at the
output of the current sense amplifier. The slope compensation ramp can be increased by adding an external
slope resistor (RSL) between the sense resistor (RS) and the CS pin, but take extra care when using the RSL,
because the peak current limit is affected by adding RSL. See Current Limit (CS Pin) for more detailed
information.
Current Limit
Q1
±
VCL +0.3 V
30 uA peak
+
ISLOPE
+
±
±
PWM
+
2k
CS
RSL
(optional)
+
A = 10
±
RF
CF
0.3 V
RS
COMP
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Figure 10. Current Sensing and Slope Compensation
According to peak current mode control theory, the slope of the compensation ramp must be greater than half of
the sensed inductor current falling slope to prevent sub-harmonic oscillation at high duty cycle. Therefore, the
minimum amount of slope compensation should satisfy the following inequality.
(V
+ V ) - VSUPPLY
0.5 ´ LOAD F
× RS × Margin < 30mA ´ (2kΩ + RSL )× FSW
LM
(4)
VF is a forward voltage drop of D1, the external diode. 1.2 is recommended as a margin to cover non-ideal
factors.
If required, RSL can be added to increase the slope of the compensation ramp from half to 82% of the slope of
the sensed inductor current during the falling slope. The typical RSL value is calculated using Equation 5. The
maximum RSL value is 1 kΩ
(V
+ V ) - VSUPPLY
0.82 ´ LOAD F
× RS = 30mA ´ (2kΩ + RSL )× FSW
LM
(5)
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The PWM comparator in Figure 10 compares the sum of sensed inductor current, slope compensation ramp and
a 0.3-V (typical) internal COMP-to-PWM offset with the COMP pin voltage (VCOMP), and terminates the present
cycle if the sum is greater than VCOMP.
7.3.7 Current Limit (CS Pin)
The LM5150-Q1 features cycle-by-cycle peak current limit without sub-harmonic oscillation at high duty cycle. If
the sum of the sensed inductor current and the slope compensation ramp exceeds the current limit threshold at
the current limit comparator input (VCL), the current limit comparator immediately terminates the present cycle. To
minimize the peak current limit variation due to changes in either the supply voltage or the output voltage, the
device features a variable current limit threshold which is calculated using Equation 6.
(V
- VVIN )
VCL = 1.2 + 0.6 × VOUT
[V]
VVOUT-REG
(6)
Cycle-by-cycle peak inductor current limit (IPEAK-CL) in steady state calculated as follows:
FSW_RT
´D
VCL - 10 ´ 30mA ´ (2kW + RSL ) ´
FSYNC
IPEAK -CL =
10 ´ RS
D = 1-
VSUPPLY
VLOAD +VF
(7)
(8)
FSYNC is included in the equation because the peak amplitude of the slope compensation varies with the
frequency of the external synchronization clock. Substitute FSW_RT for FSYNC if clock synchronization is not used.
Boost converters have a natural pass-through path from the supply to the load through the high-side power diode
(D1). Due to this path, boost converters cannot provide current limit protection when the output voltage is close
to or less than the input supply voltage.
A small external RC filter (RF, CF) at the CS pin is required to overcome the leading edge spike of the current
sense signal. Select an RF value which is greater than 30 Ω and a CF value which is greater than 1 nF. Due to
the effect of the filter, the peak current limit is not valid when the on-time is less than 2 × RF × CF.
7.3.8 Feedback and Error Amplifier (COMP Pin)
The LM5150-Q1 includes internal feedback resistors which are set based on the VSET pin resistor selection.
These feedback resistors are disconnected from the VOUT pin in the standby mode to minimize quiescent
current. The feedback resistor divider is connected to an internal transconductance error amplifier which features
high output resistance (RO = 10 MΩ) and wide bandwidth (BW = 3 MHz). The internal transconductance error
amplifier sources current which is proportional to the difference between the feedback resistor divider voltage
and the internal reference. The output of the error amplifier is connected to the COMP pin, allowing the use of a
Type 2 loop compensation network.
RCOMP, CCOMP and optional CHF loop compensation components configure the error amplifier gain and phase
characteristics to achieve a stable loop response. This compensation network creates a pole at very low
frequency (FDP), a mid-band zero (FZ_EA) and a high frequency pole (FP_EA). See Loop Compensation
Component Selection and Maximum ESR for more detailed information.
7.3.9 Automatic Wake-Up and Standby
The LM5150-Q1 wakes up when VVOUT drops below the VOUT wake-up threshold. The device goes into standby
when VVOUT rises above the VOUT standby threshold in EC or SS configuration or when VVIN rises above the
VIN standby threshold in SS configuration. The VOUT wake-up threshold is typically 3% higher than the VOUT
regulation target. The STATUS output is released in 3 µs (with 50-kΩ pullup resistor to 5 V) after the wake-up
event. The LO driver is enabled 6 µs after the STATUS output starts rising.
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VOUT
VIN
WAKEUP
+
+
VO_STANDBY
VIN_STANDBY
(SS Config)
Standby
Wakeup
FB
VVOUT-STANDBY
REF
Q
S
Q
R
VOUT
VO_WAKE
+
REF
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Figure 11. Automatic Wake-Up and Standby Control
In SS configuration, the VOUT standby threshold is typically 24% higher than the VOUT regulation target. The
VIN standby threshold is typically 1 V higher than the VOUT wake-up threshold in SS configuration. To prevent
chatter, the forward voltage drop of diode D1 must be less than 0.95 V. See Figure 15.
VSUPPLY (Fast fall)
Engine Cranking
VLOAD
VVOUT-STANDBY2 = 1.24 x VVOUT-REG
VVIN-STANDBY = VVOUT-WAKE +1.0
when FSW is low
VVOUT-WAKEUP = 1.03 x VVOUT-REG
VVOUT-REG
Wake-up/Standby
Wake-up
Standby
Wake-up
Standby
STATUS
ILOAD
Full load
Full load
Very light load
Figure 12. Automatic Wake-Up and Standby Operation in the SS Configuration
(With Fast VSUPPLY Fall and Slow Switching)
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VSUPPLY (Slow fall)
Engine Cranking
VLOAD
VVOUT-STANDBY2 = 1.24 x VVOUT-REG
VVIN-STANDBY = VVOUT-WAKE +1.0
when FSW is fast
VVOUT-WAKEUP = 1.03 x VVOUT-REG
VVOUT-REG
Wake-up
Standby
W-up
Wake-up/Standby
Standby
Standby
Wake-up
Standby
STATUS
Full load
ILOAD
Full load
Very light load /No load
Figure 13. Automatic Wake-Up and Standby Operation in the SS Configuration
(With Slow VSUPPLY Fall and Fast Switching)
In EC configuration, the VOUT standby threshold is typically 6% higher than the VOUT regulation target.
Because of the minimum duty cycle limit (see Emergency-Call Configuration (EC Configuration)), the LM5150-Q1
alternates between the wake-up and the low IQ standby modes at medium or light load. See Figure 16.
VLOAD
Vehicle Battery Disconnect
Vehicle Battery Reconnect
VVOUT_STATUS_OFF = 1.12 x VVOUT-REG
VVOUT-STANDBY1 = 1.06 x VVOUT-REG
VVOUT-WAKEUP = 1.03 x VVOUT-REG
VSUPPLY
VVOUT-REG
Standby
W-up
Wake-up
Standby
Standby
Wake-up
Standby
STATUS
ILOAD
Full load
Mid / Light load
Full load
Figure 14. Automatic Wake-Up and Standby Operation in EC Configuration
To minimize output undershoot when waking up, the LM5150-Q1 boosts the VOUT regulation target during the
first 128 cycles after the wake-up event. The regulation target becomes 3% higher than the original regulation
target for 64 cycles, 2% higher for the next 32 cycles and 1% higher for the final 32 cycles. The VOUT pin
voltage may rise up above the VOUT standby threshold even if switching stops at the VOUT standby threshold
because the energy stored in the inductor transfers to the output capacitor when switching stops. See Device
Functional Modes for more information about the automatic wake-up and standby operation.
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7.3.10 Boost Status Indicator (STATUS Pin)
STATUS is an open-drain output and requires a pullup resistor between 5 kΩ and 100 kΩ. The pin is pulled up
after VVOUT falls below the VOUT wake-up threshold, and is toggled to a low logic state when VVIN rises above
the VIN standby threshold in SS configuration or when VVOUT rises above the VOUT status off-threshold in EC
configuration. The pin is also pulled to ground when EN < 1 V and VOUT is greater than about 2 V, when AVCC
< VVCC-UVLO-FALLING or during thermal shutdown.
7.3.11 Maximum Duty Cycle Limit, Minimum Input Supply Voltage
When designing a boost converter, the maximum duty cycle should be reviewed at the minimum supply voltage.
The minimum input supply voltage which can achieve the target output voltage is estimated from Equation 9.
F
VSUPPLY(MIN) » (VVOUT -REG + VF ) ´ (1 - DMAX ) ´ SYNC + ISUPPLY(MAX) ´ RDCR + ISUPPLY(MAX) ´ (RDS(ON) + RS ) ´ DMAX
FSW_RT
(9)
ISUPPLY(MAX) is the maximum input current. RDCR is the DC resistance of the inductor. RDS(ON) is the on-resistance
of the MOSFET. Substitute FSW_RT for FSYNC if the clock synchronization is not used. The minimum input supply
voltage can be decreased by supplying FSYNC which is less than FSW_RT.
This maximum duty cycle limit (DMAX) is 87% (typical), but may fall down below 80% if the external
synchronization clock frequency is higher than 0.85 × FSW (TYPICAL). Select an FSYNC which is within –25% and
–15% of the FSW (TYPICAL) if 1:5 step-up ratio is required with clock synchronization. The minimum input supply
voltage can be further decreased by supplying a lower frequency external synchronization clock. See Clock
Synchronization (SYNC Pin in SS Configuration) for more information.
7.3.12 MOSFET Driver (LO Pin)
The LM5150-Q1 provides an N-channel MOSFET driver which can source or sink a peak current of 1.5 A. The
driver is powered by the 5-V VCC regulator and is enabled when the EN pin voltage is greater than 2 V and the
AVCC pin voltage is greater than the AVCC UVLO threshold.
7.3.13 Thermal Shutdown
Internal thermal shutdown is provided to protect the LM5150-Q1 if the junction temperature exceeds 175°C
(typical). When thermal shutdown is activated, the device is forced into a low power thermal shutdown state with
the MOSFET driver and the VCC regulator disabled. After the junction temperature is reduced (typical hysteresis
is 15⁰C), the device is re-enabled.
7.4 Device Functional Modes
7.4.1 Shutdown Mode
If the EN pin voltage is below 1 V, the LM5150-Q1 is in shutdown mode with all functions disabled except EN. In
shutdown mode, the device reduces the VOUT pin current consumption to below 5.25 µA (typical) and the
STATUS pin is pulled to ground. The device can be enabled by raising the EN pin above 2 V and operates in
either the standby mode or the wake-up mode if VAVCC is greater than the AVCC UVLO threshold.
Table 2. State of Each Pin in Shutdown Mode
STATUS
SYNC
RT
COMP
EN
VOUT
PVCC/AVCC
LO
CS
VIN
VSET
Grounded
Disabled
Disabled
Disabled
Enabled
IQ ≤ 5 µA
Disabled
Grounded
Disabled
IQ ≈ 0.1 µA
Disabled
7.4.2 Standby Mode
If VOUT is greater than the VOUT standby threshold or VIN is greater than the VIN standby threshold in the SS
mode, the LM5150-Q1 enters into standby mode.
In standby mode, most functions are disabled, including the thermal shutdown, to minimize the current
consumption. The VOUT wake-up monitor is enabled in standby mode to allow wake-up if the VOUT voltage
drops below the VOUT wake-up threshold. The VCC regulator reduces the sourcing capability to 17 mA in
standby mode and the AVCC UVLO comparator is disabled.
The VOUT standby threshold fulfills effectively the overvoltage protection (OVP) function.
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Table 3. State of Each Pin in Standby Mode
STATUS
Released or
Grounded
SYNC
Disabled
RT
Disabled
COMP
Disabled
EN
VOUT
PVCC/AVCC
LO
CS
VIN
VSET
Enabled
IQ ≤ 15 µA. VOUT
wake-up monitor
enabled
Enabled IPVCC
capability ≈ 17
mA
Grounded
Disabled
IQ ≈ 0.1 µA
Disabled
7.4.3 Wake-Up Mode
The LM5150-Q1 wakes up from standby mode if VOUT drops below the VOUT wake-up threshold. There are two
configurations when the device wakes up. One is start-stop configuration (SS configuration) and the other is
emergency-call configuration (EC configuration). The configuration is selectable by the VSET resistor (see
Table 1).
7.4.3.1 Start-Stop Configuration (SS Configuration)
Bypass path
D1
VSUPPLY
VLOAD
LM
+
±
Reverse Battery
Protection Diode
COUT
Q1
RLOAD
CIN
Vehicle
Battery
RS
VIN
LO
AGND
CS
STATUS
SYNC
LM5150
EN
COMP
VOUT
RT
RCOMP
PGND
VSET
PVCC
AVCC
C VOUT
CCOMP
RT
RSET
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Figure 15. Typical Start-Stop Application
The LM5150-Q1 runs at fixed switching frequency without any pulse skipping in SS configuration. The device
turns on the LO driver every cycle with TON-MIN until entering into standby mode, which helps to prevent EMI
spectrum shifts. Because the MOSFET turns on every cycle, the boost converter output may be above the
regulation target if the required on-time is less than the TON-MIN when the boost supply voltage is close to the
VOUT regulation target or the load current is very small. The output voltage will rise above the VOUT regulation
target if the one of the inequalities below is true.
1
D´
< TON-MIN
FSW
(10)
(VSUPPLY ´ TON-MIN )2
FSW
´
> ILOAD
2 ´ LM
(VLOAD + VF - VSUPPLY )
(11)
In SS configuration, the LM5150-Q1 enters into the standby mode if VOUT is greater than the VOUT standby
threshold—which is 24% higher than the VOUT regulation target—or if VIN is greater than the VIN standby
threshold.
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7.4.3.2 Emergency-Call Configuration (EC Configuration)
Other
loads
+
±
Vehicle
Battery
D1
VSUPPLY
VLOAD
LM
+
COUT
Q1
CIN
RLOAD
Back-up
battery
RS
VIN LO
CS
AGND
STATUS
SYNC
LM5150
EN
COMP
RT
RCOMP
CCOMP
PGND
VOUT
VSET
PVCC
AVCC
CVOUT
RSET
RT
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Figure 16. Typical Emergency Call Application
The EC configuration achieves high efficiency at light/medium load by alternating between the wake-up and the
low IQ standby modes. In EC configuration, the LM5150-Q1 limits the minimum duty cycle programmed by VVOUT
and VVIN. The minimum duty cycle limit is calculated using Equation 12.
æ
ö
VVIN
DMIN = 0.75 ´ ç 1 ÷
V
VOUT -REG ø
è
(12)
Due to this minimum duty cycle limit, the boost converter sources more current than required when the load
current is relatively small. As a result, the output voltage increases and eventually crosses the VOUT standby
threshold which is typically 6% higher than the VOUT regulation target. The LM5150-Q1 then goes into the low IQ
standby mode. The LM5150-Q1 wakes up when VOUT drops below the VOUT wake-up threshold which is
typically 3% higher than the VOUT regulation target. The device alternates between these two modes when the
inequality below is true.
2
æ
DMIN ö
ç VSUPPLY ´
÷
FSW ø
FSW
è
´
> ILOAD
2 ´ LM
(VLOAD + VF - VSUPPLY )
(13)
Assuming VLOAD = VVOUT = VVOUT-REG and VSUPPLY = VVIN, the skip cycle operation starts when the inequality
below is true.
2
æ
æ VLOAD - VSUPPLY ö ö
çç VSUPPLY ´ 0.75 ´ ç
÷ ÷÷
VLOAD
è
øø
è
>ILOAD
2 ´ LM ´ FSW ´ (VLOAD + VF - VSUPPLY )
(14)
In EC configuration, the LM5150-Q1 doesn’t generate any pulse if VCOMP is less than the 0.3 V and the required
minimum duty cycle limit is zero.
If the peak current limit is triggered before reaching the minimum duty cycle, the device terminates the LO driver
output immediately.
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If VOUT is greater than the VOUT status-off threshold (typically 12% higher than the VOUT regulation target), the
LM5150-Q1 pulls the STATUS pin low.
In EC configuration, light load efficiency is proportional with the inductor current ripple ratio.
Table 4. State of Each Pin in Wake-Up Mode
STATUS
Release
d
SYNC
Enabled in
SS
configuratio
n
RT
Enabled
COMP
Enabled
EN
VOUT
PVCC/AVCC
Enabled
VOUT standby
monitor is
enabled. VOUT
status-off monitor
is enabled in EC
configuration.
Enabled IPVCC
capability ≈ 75 mA
LO
PWM
CS
VIN
VSET
Enabled
IQ ≈ 30 µA.
VIN status-off
monitor is
enabled in SS
configuration
Disabled
Table 5. Start-Stop vs Emergency-Call Configuration
CONFIGURATION
START-STOP
VOUT regulation options
EMERGENCY-CALL
6.8 V, 7.5 V, 8.5 V, 10.5 V
VSET resistor value [Ω]
29.4k, 19.1k, 9.53k, GND
90.9k, 71.5k, 54.9k, 41.2k
Clock Synchronization
Yes
No, SYNC should be grounded
VOUT wake-up threshold [V]
VOUT standby threshold [V]
VVOUT-REG × 1.03
VVOUT-REG × 1.24
VVOUT-REG × 1.06
VOUT status-off threshold [V]
N/A
VVOUT-REG × 1.12
VIN standby threshold [V]
VVOUT-REG × 1.03 + 1.0 V
N/A
STATUS pin control (Open-drain with pullup
resistor)
Released by VOUT wake-up
Pulled down by VIN standby
Released by VOUT wake-up
Pulled down by VOUT status-off
At heavy load when VVIN « VVOUT
Pulse width modulation (PWM)
At light/no load when VVIN « VVOUT
LO turns on at every cycle in wake-up configuration. Skip cycle operation by
alternating between wake-up and standby configurations.
When VVIN ≈ VVOUT or VVIN ≥ VVOUT
Minimum on-time is limited
Minimum duty cycle is limited
LO turns on at every cycle in wake-up
configuration. On-time is limited by TON-MIN.
VOUT goes out of regulation.
Duty cycle can drop to 0%. No pulses if
VCOMP < 0.3 V and DMIN ≤ 0%.
Maximum duty-cycle limit
20
Typically 87%
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8 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
8.1 Application Information
The LM5150-Q1 is a non-synchronous boost controller. The following design procedure can be used to select the
external components for the LM5150-Q1. Alternately, the WEBENCH® software may be used to generate
complete designs. The WEBENCH software uses an iterative design procedure and accesses comprehensive
data bases of components when generating a design. This section presents a simplified discussion of the design
process.
8.1.1 Bypass Switch / Disconnection Switch Control
The STATUS pin can be used to control an external bypass switch, which turns on when the boost is in standby
mode, or to control an external disconnection switch that turns off when the boost is in standby mode. In
Figure 17, a P-channel MOSFET is used to connect the boost supply input to the load directly when the boost is
in standby mode. This bypass switch can be turned on slowly, but it must be turned off fast after the STATUS pin
is pulled up by the wake-up event. The STATUS pin is rated to the absolute maximum 65 V.
VSUPPLY
VLOAD
STATUS
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Figure 17. Bypass Switch Control Example
In Figure 18, a P-channel MOSFET is used to disconnect the boost supply output from the battery when boost is
not required. This disconnection switch can be turned off slowly, but it must be turned on fast after the STATUS
pin is pulled up by the wake-up event.
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Application Information (continued)
VLOAD
VBAT
PVCC
STATUS
LM5150
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Figure 18. Disconnection Switch Control Example
8.1.2 Loop Response
The open-loop transfer function of a boost regulator is defined as the product of modulator transfer function and
feedback transfer function.
The modulator transfer function of a current mode boost regulator including a power stage with an embedded
current loop can be simplified as a one load pole (FLP), one ESR zero (FZ_ESR), and one Right Half Plane (RHP)
zero (FRHP) system, which can be explained as follows.
Modulator transfer function is defined as follows:
æ
ö æ
ö
s
s
ç1 +
÷ ´ ç1 ÷
ç
÷
2p ´ FZ_ESR ø è 2p ´ FRHP ø
Vˆ LOAD (s)
è
= AM ´
æ
ö
V̂COMP (s)
s
ç1 +
÷
2p ´ FLP ø
è
where
AM =
•
FLP =
•
•
•
RLOAD D'
´
RS ´ 10 2
2
2p ´ RLOAD ´ COUT
[Hz]
FZESR =
1
[Hz]
2p ´ RESR ´ COUT
FRHP =
RLOAD ´ (D ')2
[Hz]
2p ´ LM
(15)
RESR is the equivalent series resistance (ESR) of the output capacitor which is specified in the capacitor
datasheet.
RCOMP, CCOMP and CHF (see Figure 19) configure the error amplifier gain and phase characteristics to produce a
stable voltage loop with fast response. This compensation network creates a dominant pole at low frequency
(FDP_EA), a mid-band zero (FZ_EA), and a high frequency pole (FP_EA).
22
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Application Information (continued)
The feedback transfer function is defined as follows:
æ
ö
s
ç1 +
÷
ç
ˆ
2p ´ FZ_EA ÷ø
VCOMP(S)
è
= AFB ´
æ
ö æ
V̂LOAD(S)
s
s
ç1 +
÷ ´ ç1 +
ç
÷
ç
2
F
2
F
p
´
p
´
DP_EA ø è
P_EA
è
ö
÷
÷
ø
where
AFB =
•
1.2
´ RO ´ Gm
VLOAD
FDP_EA =
•
FZ_EA =
•
FP_EA =
•
1
[Hz]
2p ´ RO ´ CCOMP
1
[Hz]
2p ´ RCOMP ´ CCOMP
1
1
»
[Hz]
æ CCOMP ´ CHF ö 2p ´ RCOMP ´ CHF
2p ´ RCOMP ´ ç
÷
è CCOMP + CHF ø
(16)
RO (≈ 10 MΩ) is the output resistance of the error amplifier and Gm (≈ 2 mA/V) is the transconductance of the
error amplifier.
Assuming FLP is canceled by FZ_EA, FRHP is much higher than crossover frequency (FCROSS), and FZ_ESR is either
canceled by FP_EA or FZ_ESR is much higher than FCROSS, the open-loop transfer function can be simplified as
follows:
1
T(s) = AM ´ AFB ´
æ
ö
s
ç1 +
÷
ç
2p ´ FDP_EA ÷ø
è
(17)
Because |T(s)|=1 at the crossover frequency, the crossover frequency can be simply estimated using those
assumptions.
FCROSS »
[AM ´ AFB ]2 - 1
2p ´ RO ´ CCOMP
[Hz]
(18)
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8.2 Typical Application
The LM5150-Q1 requires a minimum number of external components to work. Figure 19 includes all optional
components as an example.
CSNB
RSNB
VSUPPLY
VLOAD
D1
LM
Q1
COUT
CIN
RF
RG
CVIN
(leave floating
RS
CF
LO
VIN
if not used)
RSL
CS
STATUS
VSET
RT
if not used)
CVOUT
AGND VOUT
& PGND
EN
LM5150
SYNC
(connect to GND
RVOUT
ILOAD
RLOAD
(connect to VOUT
if not used)
COMP
PVCC AVCC
RCOMP
RAVCC
RT
CCOMP
RSET
CPVCC
Optional components are in blue
CHF
CAVCC
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Figure 19. Typical Circuit With Optional Components
8.2.1 Design Requirements
Table 6 lists the design parameters for Figure 19.
Table 6. Design Example Parameters
DESIGN PARAMETER
VALUE
Target Application
Start-stop
Minimum Input Supply Voltage (VSUPPLY(MIN))
2.5 V
Target Output Voltage (VLOAD)
8.5 V
Maximum Load Current (ILOAD)
2.94 A (≈ 25 Watt)
Switching Frequency (FSW)
440 kHz
D1 Diode Forward Voltage Drop
0.7 V
Maximum Inductor Current Ripple Ratio (RR)
0.6 (= 60%)
Estimated Full Load Efficiency (Eff)
0.8 (= 80%)
Current Limit Margin (MCL)
1.2 (= 120%)
FLP over FCROSS (K1)
0.15 (FLP = 0.15 × FCROSS)
FZ_EA over FLP (K2)
3 (FZ_EA = 3 × FLP)
8.2.2 Detailed Design Procedure
8.2.2.1 Custom Design With WEBENCH® Tools
Click here to create a custom design using the LM5150-Q1 device with the WEBENCH® Power Designer.
1. Start by entering the input voltage (VIN), output voltage (VOUT), and output current (IOUT) requirements.
2. Optimize the design for key parameters such as efficiency, footprint, and cost using the optimizer dial.
3. Compare the generated design with other possible solutions from Texas Instruments.
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The WEBENCH Power Designer provides a customized schematic along with a list of materials with real-time
pricing and component availability.
In most cases, these actions are available:
• Run electrical simulations to see important waveforms and circuit performance
• Run thermal simulations to understand board thermal performance
• Export customized schematic and layout into popular CAD formats
• Print PDF reports for the design, and share the design with colleagues
Get more information about WEBENCH tools at www.ti.com/WEBENCH.
8.2.2.2 RSET Resistor
Select the value of RSET, referring to Table 1. 9.53 kΩ is chosen to target 8.5 V in SS configuration. In general,
about 5% to approximately 10% output undershoot should be considered when selecting the VOUT regulation
target.
8.2.2.3 RT Resistor
The value of RT for 440-kHz switching frequency is calculated as follows:
RT
2.233 u 1010
FSW _ RT
619
TYPICAL
2.233 u 1010
440 k
619
50.1k:
(19)
A standard value of 49.9 kΩ is chosen for RT.
In general, higher frequency boost converters are smaller and faster, but they also have higher switching losses
and lower efficiency.
8.2.2.4 Inductor Selection (LM)
When selecting the inductor, consider three key parameters: inductor current ripple ratio (RR), falling slope of the
inductor current, and RHP zero frequency (FRHP).
Inductor current ripple ratio is selected to have a balance between core loss and copper loss. The falling slope of
the inductor current must be low enough to prevent sub-harmonic oscillation at high duty cycle (additional RSL
resistor is required if not). Higher FRHP (= lower inductance) allows a higher crossover frequency and is always
preferred when using a smaller value output capacitor.
The inductance value can be selected to set the inductor current ripple between 30% and 70% of the average
inductor current as a good compromise between RR, FRHP and inductor falling slope. In this example, 60% ripple
ratio (RR = 0.6) is selected as the maximum inductor current ripple ratio (the inductor current ripple ratio is the
biggest when D = 0.33). The target inductance value is calculated as follows:
8.5
0.14 ´
0.14 ´ RLOAD
2.94 = 1.53m[H]
=
LM(TARGET) =
RR ´ FSW
0.6 ´ 440k
(20)
LM(GUIDE) =
(VLOAD - VSUPPLY(MIN) )´ VSUPPLY(MIN) =
FSW ´ VLOAD ´ ILOAD
(8.5 - 2.5) ´ 2.5
= 1.36m[H]
440k ´ 8.5 ´ 2.94
(21)
If the target inductance is smaller than the value calculated using Equation 21, consider adding the slope
compensation resistor (RSL), as mentioned in the Slope Compensation Ramp (RSL) section, or select a smaller
RR and recalculate the inductance using Equation 20.
A standard value of 1.5 µH is chosen for LM. The required inductor saturation current rating is estimated after
selecting RS and RSL.
8.2.2.5 Current Sense (RS)
Based on the assumptions that 20% of current limit margin (MCL = 1.2), 80% estimated efficiency (Eff = 0.8) at
full load and no RSL populated, RS is calculated using Equation 22 and Equation 23.
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FSW_RT
(VVOUT - VVIN )
- 10 ´ 30μA ´ (2kΩ + RSL ) ´
´D
VVOUT -REG
FSYNC
RS =
[ W]
1 ö
æ
V
´
D
´
SUPPLY(MIN)
ç V
FSYNC ÷
1
LOAD ´ ILOAD
÷ ´ MCL
10 ´ ç
+ ´
LM
ç VSUPPLY(MIN) ´ Eff 2
÷
ç
÷
è
ø
(22)
(8.5 - 2.5)
2.5 ö
æ
1.2 + 0.6 ´
- 10 ´ 30μ ´ (2k + 0) ´ 1´ ç 1 ÷
8.5
è 8.5 + 0.7 ø = 7.12m[W]
RS =
æ
2.5 ö
1 ö
æ
´
ç 8.5 ´ 2.94 1 2.5 ´ ç 1 ÷
÷
è 8.5 + 0.7 ø 440k ÷ ´ 1.2
10 ´ ç
+ ´
1.5u
ç 2.5 ´ 0.8 2
÷
ç
÷
è
ø
(23)
1.2 + 0.6 ´
Substitute FSW_RT for FSYNC if the clock synchronization is not used.
A standard value of 7 mΩ is chosen for RS. A low-ESL resistor is recommended to minimize the error caused by
the ESL.
8.2.2.6 Slope Compensation Ramp (RSL)
The minimum inductance value which can prevent sub-harmonic oscillation without RSL is calculated using
Equation 24. If the selected inductance value is less than the minimum inductance calculated using Equation 24,
add a slope compensation resistor (RSL) externally.
LM(MIN) = 0.5 ´
(VLOAD + VF ) - VSUPPLY(MIN)
60m ´ FSW
´ RS ´ Margin = 0.5 ´
(8.5 + 0.7) - 2.5
´ 7m ´ 1.2 = 1.07m[H]
60m ´ 440k
(24)
1.2 is the recommended margin to cover non-ideal factors.
If needed, use Equation 25 to find the RSL value which matches the typical amount of slope compensation.
(VLOAD + VF ) - VSUPPLY(MIN)
´ RS - 2k[W]
RSL = 0.82 ´
LM ´ FSW ´ 30mA
(25)
In this example, RSL is not populated because the selected inductance value, 1.5 µH, is greater than the
minimum required inductance from Equation 24.
After selecting RS and RSL, the peak inductor current at current limit (IPEAK-CL) can be calculated. Setting the
inductor saturation current rating higher than the IPEAK-CL is recommended.
FSW_RT
´D
VCL - 10 ´ 30mA ´ (2kW + RSL ) ´
VSUPPLY(MIN)
FSYNC
+
´ TD [A]
IPEAK -CL =
10 ´ RS
LM
(26)
1.2 + 0.6 ´
IPEAK -CL =
(8.5 - 2.5)
2.5 ö
æ
- 10 ´ 30m ´ 2k ´ 1´ ç 1 8.5
8.5
+ 0.7 ÷ø 2.5
è
+
´ 20n = 16.9[A]
10 ´ 7m
1.5u
(27)
TD is the typical propagation delay of current limit.
8.2.2.7 Output Capacitor (COUT)
There are a few ways to select the proper value of output capacitor (COUT). The output capacitor value can be
selected based on output voltage ripple, output overshoot or undershoot due to load transient. In this example,
COUT is selected based on output undershoot because the waking up performance is similar with no-load to fullload transient performance.
The output undershoot becomes smaller by increasing FCROSS or by decreasing FLP: a smaller COUT is allowed by
increasing FCROSS or by decreasing FLP.
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To increase FCROSS, FSW and FRHP must be increased because the maximum FCROSS is, in general, limited at
1/10 of FRHP at VSUPPLY(MIN) or 1/10 of FSW whichever is lower.
FRHP is calculated using Equation 28.
2
FRHP
2
æ VSUPPLY(MIN) ö
8.5 æ 2.5 ö
RLOAD ´ ç
÷
´ç
÷
è VLOAD + VF ø = 2.94 è 8.5 + 0.7 ø = 22.6k[Hz]
=
2p ´ LM
2p ´ 1.5u
(28)
FCROSS is selected at 1/10 of FRHP or 1/10 of FSW, whichever is lower.
FRHP
2.27 kHz
10
FSW 440 k
44 kHz
10
10
(29)
(30)
In this example, 2.27 kHz is selected as a target FCROSS and FLP is selected to be 340 Hz (K1 = 0.15).
In general, there is about 5% or less undershoot with FLP = 0.1 × FCROSS (K1 = 0.1) and 10% or less undershoot
with FLP = 0.2 × FCROSS (K1 = 0.2) during 0% to 100% load transient. The recommended K1 factor range is from
0.02 to 0.2.
FLP is calculated using Equation 31.
2
FLP =
[Hz]
2p ´ RLOAD ´ COUT
(31)
The minimum required output capacitance value is calculated using Equation 32.
2
2
COUT
324 PF
2S u RLOAD u FLP 2S u 8.5 u 340
2.94
(32)
The maximum output ripple current is calculated at the minimum input supply voltage as follows:
´I
V
8.5 ´ 2.94
= 5[A]
IRIPPLE_COUT(MAX) = LOAD LOAD =
2 ´ VSUPPLY(MIN)
2 ´ 2.5
(33)
The ripple current rating of the output capacitors must be enough to handle the output ripple current. By using
multiple output capacitors, the ripple current can be split. In practice, ceramic capacitors are placed closer to the
diode and the MOSFET than the bulk aluminum capacitors in order to absorb the majority of the ripple current.
In this example, three 100-µF capacitors are placed in parallel to ensure ripple current capability. If high-ESR
capacitors are used for the output capacitor, additional 10-µF ceramic capacitors can be placed close to the
switching components to minimize switching noise.
8.2.2.8 Loop Compensation Component Selection and Maximum ESR
Based on Equation 18, CCOMP is calculated as follows:
2
[AM ´ AFB ]
2
CCOMP (over
CCOMP
damping)
over damping
=
-1
2p ´ RO ´ FCROSS
=
é RLOAD D '
ù
1.2
´ ´
´ RO ´ Gm ú - 1
ê
ë RS ´ 10 2 VLOAD
û
2p ´ RO ´ FCROSS
2.5
ª 8.5
º
« 2.94
»
1.2
8.5
0.7
u
u
u 10M u 2m»
«
2
8.5
« 7m u 10
»
¬
¼
2S u 10M u 2.27 k
(34)
2
1
111nF
(35)
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By selecting CCOMP following Equation 34, the typical phase margin is set to 90⁰ and the loop response is
overdamped. In this example, FZ_EA is placed at 3 times higher frequency than FLP to have lower phase margin
but faster settling time (K2 = 3, target FZ_EA is 1.02 kHz). Recommended range of FZ_EA is from 1 × FLP to 4 × FLP
(1 ≤ K2 ≤ 4). Practical crossover frequency will vary with K2 with a range of 0.5 × FCROSS to 1.0 × FCROSS.
CCOMP over damping
111n
CCOMP
37 nF
K2
3
(36)
A standard value of 33 nF is chosen for CCOMP.
RCOMP is selected to set the error amplifier zero at 1.02 kHz.
1
1
RCOMP
4.73 k:
2S u CCOMP u FZ _ EA 2S u 33 n u 1.02 k
(37)
A standard value of 4.64 kΩ is chosen for RCOMP.
CHF is usually used to create a pole at high frequency (FP_EA) to cancel FZ_ESR. By using a small ESR capacitor
which can place FZ_ESR greater than 10 × FCROSS, the output capacitor ESR would not affect the loop stability.
The maximum ESR which does not affect the loop response is calculated using Equation 38.
1
1
RESR MAX
23 m:
2S u CCOMP u FCROSS u 10 2S u 330 u u 2.27 k u 10
(38)
8.2.2.9 PVCC Capacitor, AVCC Capacitor, and AVCC Resistor
The PVCC capacitor supplies the peak transient current to the LO driver. The value of PVCC capacitor (CPVCC)
must be 4.7 μF or higher and must be a high-quality, low-ESR, ceramic capacitor. CPVCC must be placed close to
the PVCC pin and the PGND pin. A value of 4.7 μF is selected for this design example. The AVCC capacitor
must be placed close to the device. The recommended AVCC capacitor value is 0.1 μF. The AVCC resistor
should be placed between PVCC and AVCC pins. The recommended AVCC resistor value is 10 Ω.
8.2.2.10 VOUT Filter (CVOUT, RVOUT)
The VOUT pin is the input of the internal VCC regulator and also is the input of the output voltage sensing. To
minimize noise at the VOUT pin, a 1-μF capacitor must be placed at the VOUT pin in most cases. If multiple
output capacitors are used, one of them can be placed at the VOUT pin as CVOUT. The VOUT capacitor must be
a high-quality, low-ESR, ceramic capacitor and must be placed close to the device. A resistor can be added at
the VOUT pin (RVOUT) to form a RC filter (see Figure 19). In this case, the maximum resistor value should be less
than or equal to 2 Ω.
8.2.2.11 Input Capacitor
The input capacitors reduce the input voltage ripple. Assuming high-quality ceramic capacitors are used for the
input capacitors, the maximum input voltage ripple can be calculated by using Equation 39.
VLOAD
VRIPPLY(CIN) =
[V]
32 ´ LM ´ CIN ´ FSW 2
(39)
The required input capacitor value is a function of the impedance of the source power supply. More input
capacitors are required if the impedance of the source power supply is not low enough. In the example, three 10µF ceramic capacitors are used.
8.2.2.12 MOSFET Selection
The MOSFET gate driver of the LM5150-Q1 is powered by the internal 5-V VCC regulator. The MOSFET driven
by the LM5150-Q1 must have a logic-level gate threshold with its on-resistance specified at 4.5 V or lower and
must be rated to handle the maximum output voltage plus any switch node ringing. The maximum gate charge is
limited by the 75-mA PVCC sourcing current limit, and is calculated as follows:
75m
QG(@5V) <
[C]
FSW
(40)
A leadless package is preferred for high switching-frequency designs. The MOSFET gate capacitance should be
small enough so that the gate voltage is fully discharged during the off-time.
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8.2.2.13 Diode Selection
A Schottky is the preferred type for D1 diode due to its low forward voltage drop and small reverse recovery
charge. Low reverse leakage current is important parameter when selecting the Schottky diode. The diode must
be rated to handle the maximum output voltage plus any switching node ringing. Also, it must be able to handle
the average output current. To prevent chatter between wake-up and standby, the forward voltage drop of the D1
diode must be less than 0.95 V at full load.
8.2.2.14 Efficiency Estimation
The total loss of the boost converter (PTOTAL) can be expressed as the sum of the losses in the LM5150-Q1 (PIC),
MOSFET power losses (PQ), diode power losses (PD), inductor power losses (PL), and the loss in the sense
resistor (PRS).
PTOTAL = PIC + PQ + PD + PL + PRS [W]
(41)
PIC can be separated into gate driving loss (PG) and the losses caused by quiescent current (PIQ).
PIC = PG + PIQ [W]
(42)
Each power loss is approximately calculated as follows:
PG = QG(@5V) ´ VVOUT ´ FSW [W]
(43)
PIQ = VVOUT ´ IVOUT + VVIN ´ IVIN [W]
(44)
IVIN and IVOUT values in each mode can be found in the supply current section of the Electrical Characteristics
table.
PQ can be separated into switching loss (PQ(SW)) and conduction loss (PQ(COND)).
PQ = PQ(SW) + PQ(COND) [W]
(45)
Each power loss is approximately calculated as follows:
PQ(SW) = 0.5 ´ (VVOUT + VF )´ ISUPPLY ´ (tR + tF )´ FSW [W]
(46)
tR and tF are the rise and fall times of the low-side N-channel MOSFET device. ISUPPLY is the input supply current
of the boost converter.
PQ(COND) = D ´ ISUPPLY 2 ´ RDS(ON) [W]
(47)
RDS(ON) is the on-resistance of the MOSFET and is specified in the MOSFET data sheet. Consider the RDS(ON)
increase due to self-heating.
PD can be separated into diode conduction loss (PVF) and reverse recovery loss (PRR).
PD = PVF + PRR [W]
(48)
Each power loss is approximately calculated as follows:
PVF = (1 - D) ´ VF ´ ISUPPLY [W]
(49)
PRR = VLOAD ´ QRR ´ FSW [W]
(50)
QRR is the reverse recovery charge of the diode and is specified in the diode datasheet. Reverse recovery
characteristics of the diode strongly affect efficiency, especially when the output voltage is high.
PL is the sum of DCR loss (PDCR) and AC core loss (PAC). DCR is the DC resistance of inductor which is
mentioned in the inductor data sheet.
PL = PDCR + PAC [W]
(51)
Each power loss is approximately calculated as follows:
PDCR = ISUPPLY 2 ´ RDCR [W]
b
(52)
a
PAC = K ´ DI FSW [W]
VSUPPLY ´ D ´
DI =
(53)
1
FSYNC
LM
(54)
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∆I is the peak-to-peak inductor current ripple. K, α, and β are core dependent factors which can be provided by
the inductor manufacturer.
PRS is calculated as follows:
PRS = D ´ ISUPPLY 2 ´ RS [W]
(55)
Efficiency of the power converter can be estimated as follows:
VLOAD ´ ILOAD
Efficiency =
´ 100[%]
PTOTAL + VLOAD ´ ILOAD
(56)
8.2.3 Application Curves
Figure 20. Automatic Wake-Up
30
Figure 21. Load Transient (3 A to 1.5 A, 0.1 V/DIV)
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8.3 System Examples
8.3.1 Lower Standby Threshold in SS Configuration
By connecting the VIN pin to the VOUT pin, the current limit threshold at the current limit comparator input (VCL)
is set to 1.2 V. In SS configuration, the VOUT standby threshold is ignored. The device goes into the standby
mode when VOUT > VIN standby threshold.
VSUPPLY
VLOAD
VOUT
VIN
LO
CS
AGND
& PGND
VOUT
EN
STATUS
LM5150
SYNC
COMP
RT
VSET
PVCC
AVCC
Copyright © 2017, Texas Instruments Incorporated
Figure 22. Lower Standby Threshold in SS Configuration
8.3.2 Dithering Using Dither Enabled Device
Dithering is achieved by connecting DITH output to the RT pin through a resistor.
LM5150
LM5141
RT
DITH
Copyright © 2017, Texas Instruments Incorporated
Figure 23. Dithering Using Dither Enabled Device LM5141
8.3.3 Clock Synchronization With LM5140
Clock synchronization can be achieved by connecting LM5140's SYNCOUT to SYNC.
LM5140
SYNOUT
LM5150
SYNC
Copyright © 2017, Texas Instruments Incorporated
Figure 24. Clock Synchronization With LM5140
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System Examples (continued)
8.3.4 Dynamic Frequency Change
Switching frequency can be changed dynamically during operation by changing the RT resistor.
LM5150
RT
Low Fsw/ Hi Fsw
Copyright © 2017, Texas Instruments Incorporated
Figure 25. Dynamic Frequency Change
8.3.5 Dithering Using an External Clock
If a low-frequency clock is available, dithering can be achieved by injecting a ramp signal into RT.
LM5150
RT
Copyright © 2017, Texas Instruments Incorporated
Figure 26. Dithering Using an External Clock
32
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9 Power Supply Recommendations
The LM5150-Q1 is designed to operate from a power supply or a battery whose voltage range is from 1.5 V to 42
V. The input power supply should be able to supply the maximum boost supply voltage and handle the maximum
input current at 1.5 V. The impedance of the power supply and battery including cables must be low enough that
an input current transient does not cause an excessive drop. Additional input ceramic capacitors may be required
at the supply input of the converter.
10 Layout
10.1 Layout Guidelines
The performance of switching converters heavily depends on the quality of the PCB layout. The following
guidelines will help users design a PCB with the best power conversion performance, thermal performance, and
minimize generation of unwanted EMI.
• Place Q1, D1, and RS first.
• Place ceramic COUT and make the switching loop (COUT-D1-Q1-RS-COUT) as small as possible.
• Leave copper area next to D1 for thermal dissipation.
• Place LM5150-Q1 close to RS.
• Place CPVCC as close to the device as possible between PVCC and PGND.
• Connect PGND directly to the center of the sense resistor using a wide and short trace.
• Connect CS to the center of the sense resistor. Connect through vias if required. Connect filter capacitor
between CS pin and exposed pad.
• Connect AGND directly to the analog ground plain and connect to RSET, RT, and CCOMP.
• Connect the exposed pad to the analog ground plain and the power ground plain through vias.
• Connect LO directly to the gate of Q1.
• Make the switching signal loop (LO-Q1-RS-PGND-LO) as small as possible.
• Place CVOUT as close to the device as possible.
• The LM5150-Q1 has an exposed thermal pad to aid power dissipation. Adding several vias under the
exposed pad helps conduct heat away from the device. Connect the vias to a large ground plane on the
bottom layer.
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10.2 Layout Example
Figure 27. LM5150-Q1 PCB Layout Example
34
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11 Device and Documentation Support
11.1 Device Support
11.1.1 Development Support
11.1.1.1 Custom Design With WEBENCH® Tools
Click here to create a custom design using the LM5150-Q1 device with the WEBENCH® Power Designer.
1. Start by entering the input voltage (VIN), output voltage (VOUT), and output current (IOUT) requirements.
2. Optimize the design for key parameters such as efficiency, footprint, and cost using the optimizer dial.
3. Compare the generated design with other possible solutions from Texas Instruments.
The WEBENCH Power Designer provides a customized schematic along with a list of materials with real-time
pricing and component availability.
In most cases, these actions are available:
• Run electrical simulations to see important waveforms and circuit performance
• Run thermal simulations to understand board thermal performance
• Export customized schematic and layout into popular CAD formats
• Print PDF reports for the design, and share the design with colleagues
Get more information about WEBENCH tools at www.ti.com/WEBENCH.
11.2 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper
right corner, click on Alert me to register and receive a weekly digest of any product information that has
changed. For change details, review the revision history included in any revised document.
11.3 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
11.4 Trademarks
E2E is a trademark of Texas Instruments.
WEBENCH is a registered trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
11.5 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
11.6 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
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12 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
36
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LM5150-Q1
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PACKAGE OUTLINE
RUM0016C
WQFN - 0.8 mm max height
SCALE 3.300
PLASTIC QUAD FLATPACK - NO LEAD
4.1
3.9
A
0.6
0.5
B
0.35
0.25
PIN 1 INDEX AREA
DETAIL
4.1
3.9
OPTIONAL TERMINAL
TYPICAL
0.1 MIN
(0.05)
SECTION A-A
A-A 25.000
TYPICAL
C
0.8 MAX
SEATING PLANE
0.05
0.00
0.08 C
2.3
0.1
2X 1.95
EXPOSED
THERMAL PAD
(0.2) TYP
8X (0.525)
8
5
A3
A2
12X 0.65
9
4
A
A
17
2X
1.95
8X (0.3)
SYMM
SEE TERMINAL
DETAIL
1
12
16X
A1
PIN 1 ID
(OPTIONAL)
A4
13
16
SYMM
16X
0.35
0.25
0.1
0.05
C A B
0.6
0.5
4223544/A 02/2017
NOTES:
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. The package thermal pad must be soldered to the printed circuit board for thermal and mechanical performance.
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EXAMPLE BOARD LAYOUT
RUM0016C
WQFN - 0.8 mm max height
PLASTIC QUAD FLATPACK - NO LEAD
( 2.3)
SYMM
16X (0.75)
16
8X (0.725)
13
8X (0.3)
A4
A1
1
12
16X (0.3)
17
(3.65)
SYMM
(0.9)
20X (0.65)
9
4
( 0.2) TYP
VIA
A2
A3
8
5
(0.9)
(R0.05)
TYP
(3.65)
LAND PATTERN EXAMPLE
EXPOSED METAL SHOWN
SCALE:18X
0.07 MIN
ALL AROUND
0.07 MAX
ALL AROUND
SOLDER MASK
OPENING
METAL
EXPOSED METAL
EXPOSED METAL
SOLDER MASK
OPENING
NON SOLDER MASK
DEFINED
(PREFERRED)
METAL UNDER
SOLDER MASK
SOLDER MASK
DEFINED
SOLDER MASK DETAILS
4223544/A 02/2017
NOTES: (continued)
4. This package is designed to be soldered to a thermal pad on the board. For more information, see Texas Instruments literature
number SLUA271 (www.ti.com/lit/slua271).
5. Vias are optional depending on application, refer to device data sheet. If any vias are implemented, refer to their locations shown
on this view. It is recommended that vias under paste be filled, plugged or tented.
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EXAMPLE STENCIL DESIGN
RUM0016C
WQFN - 0.8 mm max height
PLASTIC QUAD FLATPACK - NO LEAD
(1.613) TYP
(0.61)
TYP
16X (0.75)
16
8X (0.725)
13
8X (0.275)
A4
A1
17
1
12
(1.613)
TYP
16X (0.3)
(0.61)
TYP
SYMM
(3.65)
4X
( 1.02)
12X (0.65)
9
4
EXPOSED METAL
TYP
A2
A3
5
SYMM
8
(R0.05) TYP
(3.65)
SOLDER PASTE EXAMPLE
BASED ON 0.125 mm THICK STENCIL
PRINTED SOLDER COVERAGE BY AREA UNDER PACKAGE
THERMAL PAD 17: 79% - PADS A1, A2, A3 & A4: 94%
SCALE:20X
4223544/A 02/2017
NOTES: (continued)
6. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
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PACKAGE OPTION ADDENDUM
www.ti.com
14-Oct-2017
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
MSL Peak Temp
(2)
(6)
(3)
Op Temp (°C)
Device Marking
(4/5)
LM5150QRUMRQ1
ACTIVE
WQFN
RUM
16
2000
Green (RoHS
& no Sb/Br)
CU SN
Level-2-260C-1 YEAR
-40 to 150
LM5150
Q
LM5150QRUMTQ1
ACTIVE
WQFN
RUM
16
250
Green (RoHS
& no Sb/Br)
CU SN
Level-2-260C-1 YEAR
-40 to 150
LM5150
Q
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 1
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
14-Oct-2017
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
17-Oct-2017
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
B0
(mm)
K0
(mm)
P1
(mm)
W
Pin1
(mm) Quadrant
LM5150QRUMRQ1
WQFN
RUM
16
2000
330.0
12.4
4.3
4.3
1.1
8.0
12.0
Q1
LM5150QRUMTQ1
WQFN
RUM
16
250
180.0
12.4
4.3
4.3
1.1
8.0
12.0
Q1
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
17-Oct-2017
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
LM5150QRUMRQ1
WQFN
RUM
16
2000
370.0
355.0
55.0
LM5150QRUMTQ1
WQFN
RUM
16
250
195.0
200.0
45.0
Pack Materials-Page 2
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