IXYS IXFB38N100Q2 Hiperfet power mosfet q2-class Datasheet

IXFB38N100Q2
HiPerFETTM
Power MOSFET
Q2-Class
VDSS =
ID25 =
RDS(on) ≤
≤
trr
N-Channel Enhancement Mode
Avalanche Rated, Low Qg, Low Intrinsic RG
High dV/dt, Low trr
1000V
38A
Ω
250mΩ
300ns
PLUS264TM( IXFB)
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
1000
1000
V
V
VGSS
VGSM
Continuous
Transient
± 30
± 40
V
V
ID25
IDM
TC = 25°C
TC = 25°C, pulse width limited by TJM
IA
EAS
G
38
152
A
A
TC = 25°C
TC = 25°C
38
5
A
J
dV/dt
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
20
V/ns
PD
TC = 25°C
890
W
z
TJ
-55 ... +150
°C
z
TJM
Tstg
150
-55 ... +150
°C
°C
z
300
260
°C
°C
30..120/6.7..27
N / lbs
10
g
TL
TSOLD
1.6 mm (0.063 in.) from case for 10s
Plastic body for 10s
FC
Mounting force
Weight
z
z
z
BVDSS
VGS = 0 V, ID = 1mA
1000
VGS(th)
VDS = VGS, ID = 8mA
3.0
IGSS
VGS = ±30 V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
© 2008 IXYS CORPORATION, All rights reserved
Double metal process for low gate
resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic rectifier
DC-DC converters
Switched-mode and resonant-mode
power supplies, >500kHz switching
DC choppers
Pulse generation
Laser drivers
Advantages
z
V
z
TJ = 125°C
D = Drain
TAB = Drain
Applications
z
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min.
Typ. Max.
( TAB )
Features
z
Test Conditions
S
G = Gate
S = Source
z
Symbol
D
5.5
V
± 200
nA
z
PLUS 264TM package for clip or spring
mounting
Space savings
High power density
50 μA
3 mA
250 mΩ
DS98949F(05/08)
IXFB38N100Q2
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
gfs
Characteristic Values
Min.
Typ.
Max.
VDS = 20V, ID = 0.5 • ID25, Note 1
24
Ciss
Coss
VGS = 0V, VDS = 25V, f = 1MHz
Crss
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 1Ω (External)
Qg(on)
Qgs
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
PLUS264TM (IXFB) Outline
40
S
13.5
nF
1035
pF
180
pF
25
ns
28
ns
57
ns
15
ns
250
nC
60
nC
105
nC
0.14 °C/W
RthJC
RthCS
°C/W
0.13
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
IS
VGS = 0V
ISM
Characteristic Values
Min.
Typ.
Max.
38
A
Repetitive, pulse width limited by TJM
152
A
VSD
IF = IS, VGS = 0V, Note 1
1.5
V
trr
IF = 25A, VGS = 0V
-di/dt = 100 A/μs
VR = 100 V
300
ns
QRM
IRM
1.4
9
μC
A
Note: 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2 %.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXFB38N100Q2
Fig. 1. Output Characteristics
@ 25ºC
40
Fig. 2. Extended Output Characteristics
@ 25ºC
80
VGS = 10V
35
30
6V
60
I D - Amperes
I D - Amperes
VGS = 10V
70
25
20
15
5V
40
30
10
20
5
10
0
6V
50
5V
0
0
1
2
3
4
5
6
7
8
9
10
11
12
0
2
4
6
VDS - Volts
Fig. 3. Output Characteristics
@ 125ºC
18
20 22 24
3.0
VGS = 10V
6V
35
2.6
25
RD S (on) - Normalized
30
I D - Amperes
10 12 14 16
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 19A
Value vs. Junction Temperature
40
5V
20
15
10
VGS = 10V
2.2
I D = 38A
1.8
I D = 19A
1.4
1.0
0.6
5
0
0
2
4
6
8
10
12
14
16
18
20
22
0.2
-50
24
-25
0
25
50
75
100
125
150
125
150
TJ - Degrees Centigrade
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 19A
Value vs. Drain Current
Fig. 6. Drain Current vs.
Case Temperature
2.6
40
VGS = 10V
2.4
35
T J = 125ºC
2.2
30
2.0
I D - Amperes
RD S (on) - Normalized
8
1.8
1.6
1.4
25
20
15
10
1.2
T J = 25ºC
1.0
5
0.8
0
10
20
30
I
D
40
50
- Amperes
© 2008 IXYS CORPORATION, All rights reserved
60
70
80
0
-50
-25
0
25
50
75
100
T C - Degrees Centigrade
IXFB38N100Q2
Fig. 8. Transconductance
Fig. 7. Input Admittance
80
60
T J = - 40ºC
55
70
50
60
T J = 125ºC
25ºC
- 40ºC
40
35
30
gf s - Siemens
I D - Amperes
45
25
20
25ºC
50
125ºC
40
30
20
15
10
10
5
0
0
3.0
3.5
4.0
4.5
5.0
5.5
0
6.0
10
20
Fig. 9. Source Current vs. Source-ToDrain Voltage
D
40
50
60
70
- Amperes
Fig. 10. Gate Charge
10
90
VDS = 500V
I D = 19A
I G = 10mA
80
8
70
60
VG S - Volts
I S - Amperes
30
I
V GS - Volts
50
40
T J = 125ºC
30
20
6
4
2
T J = 25ºC
10
0
0
0.2
0.4
0.6
0.8
1.0
0
1.2
50
V SD - Volts
100
Q
G
150
200
250
- nanoCoulombs
Fig. 12. Maximum Transient Thermal
Impedance
Fig. 11. Capacitance
100000
1.000
f = 1MHz
10000
Z(th) J C - (ºC/W)
Capacitance - pF
Ciss
Coss
1000
0.100
0.010
Crss
100
0
5
10
15
20
25
30
35
40
VDS - Volts
0.001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS REF: F_38N100Q2(95) 5-27-08-B
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