IXFB38N100Q2 HiPerFETTM Power MOSFET Q2-Class VDSS = ID25 = RDS(on) ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic RG High dV/dt, Low trr 1000V 38A Ω 250mΩ 300ns PLUS264TM( IXFB) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ 1000 1000 V V VGSS VGSM Continuous Transient ± 30 ± 40 V V ID25 IDM TC = 25°C TC = 25°C, pulse width limited by TJM IA EAS G 38 152 A A TC = 25°C TC = 25°C 38 5 A J dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 20 V/ns PD TC = 25°C 890 W z TJ -55 ... +150 °C z TJM Tstg 150 -55 ... +150 °C °C z 300 260 °C °C 30..120/6.7..27 N / lbs 10 g TL TSOLD 1.6 mm (0.063 in.) from case for 10s Plastic body for 10s FC Mounting force Weight z z z BVDSS VGS = 0 V, ID = 1mA 1000 VGS(th) VDS = VGS, ID = 8mA 3.0 IGSS VGS = ±30 V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 © 2008 IXYS CORPORATION, All rights reserved Double metal process for low gate resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic rectifier DC-DC converters Switched-mode and resonant-mode power supplies, >500kHz switching DC choppers Pulse generation Laser drivers Advantages z V z TJ = 125°C D = Drain TAB = Drain Applications z Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. ( TAB ) Features z Test Conditions S G = Gate S = Source z Symbol D 5.5 V ± 200 nA z PLUS 264TM package for clip or spring mounting Space savings High power density 50 μA 3 mA 250 mΩ DS98949F(05/08) IXFB38N100Q2 Symbol Test Conditions (TJ = 25°C, unless otherwise specified) gfs Characteristic Values Min. Typ. Max. VDS = 20V, ID = 0.5 • ID25, Note 1 24 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 1Ω (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd PLUS264TM (IXFB) Outline 40 S 13.5 nF 1035 pF 180 pF 25 ns 28 ns 57 ns 15 ns 250 nC 60 nC 105 nC 0.14 °C/W RthJC RthCS °C/W 0.13 Source-Drain Diode Symbol Test Conditions (TJ = 25°C, unless otherwise specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max. 38 A Repetitive, pulse width limited by TJM 152 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr IF = 25A, VGS = 0V -di/dt = 100 A/μs VR = 100 V 300 ns QRM IRM 1.4 9 μC A Note: 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2 %. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFB38N100Q2 Fig. 1. Output Characteristics @ 25ºC 40 Fig. 2. Extended Output Characteristics @ 25ºC 80 VGS = 10V 35 30 6V 60 I D - Amperes I D - Amperes VGS = 10V 70 25 20 15 5V 40 30 10 20 5 10 0 6V 50 5V 0 0 1 2 3 4 5 6 7 8 9 10 11 12 0 2 4 6 VDS - Volts Fig. 3. Output Characteristics @ 125ºC 18 20 22 24 3.0 VGS = 10V 6V 35 2.6 25 RD S (on) - Normalized 30 I D - Amperes 10 12 14 16 VDS - Volts Fig. 4. RDS(on) Normalized to ID = 19A Value vs. Junction Temperature 40 5V 20 15 10 VGS = 10V 2.2 I D = 38A 1.8 I D = 19A 1.4 1.0 0.6 5 0 0 2 4 6 8 10 12 14 16 18 20 22 0.2 -50 24 -25 0 25 50 75 100 125 150 125 150 TJ - Degrees Centigrade VDS - Volts Fig. 5. RDS(on) Normalized to ID = 19A Value vs. Drain Current Fig. 6. Drain Current vs. Case Temperature 2.6 40 VGS = 10V 2.4 35 T J = 125ºC 2.2 30 2.0 I D - Amperes RD S (on) - Normalized 8 1.8 1.6 1.4 25 20 15 10 1.2 T J = 25ºC 1.0 5 0.8 0 10 20 30 I D 40 50 - Amperes © 2008 IXYS CORPORATION, All rights reserved 60 70 80 0 -50 -25 0 25 50 75 100 T C - Degrees Centigrade IXFB38N100Q2 Fig. 8. Transconductance Fig. 7. Input Admittance 80 60 T J = - 40ºC 55 70 50 60 T J = 125ºC 25ºC - 40ºC 40 35 30 gf s - Siemens I D - Amperes 45 25 20 25ºC 50 125ºC 40 30 20 15 10 10 5 0 0 3.0 3.5 4.0 4.5 5.0 5.5 0 6.0 10 20 Fig. 9. Source Current vs. Source-ToDrain Voltage D 40 50 60 70 - Amperes Fig. 10. Gate Charge 10 90 VDS = 500V I D = 19A I G = 10mA 80 8 70 60 VG S - Volts I S - Amperes 30 I V GS - Volts 50 40 T J = 125ºC 30 20 6 4 2 T J = 25ºC 10 0 0 0.2 0.4 0.6 0.8 1.0 0 1.2 50 V SD - Volts 100 Q G 150 200 250 - nanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 100000 1.000 f = 1MHz 10000 Z(th) J C - (ºC/W) Capacitance - pF Ciss Coss 1000 0.100 0.010 Crss 100 0 5 10 15 20 25 30 35 40 VDS - Volts 0.001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: F_38N100Q2(95) 5-27-08-B