GeneSiC FST6345M Silicon power schottky diode Datasheet

FST6340M thru FST63100M
Silicon Power
Schottky Diode
VRRM = 40 V - 100 V
IF(AV) = 60 A
Features
• High Surge Capability
• Types from 40 V to 100 V VRRM
D61-3M Package
• Not ESD Sensitive
Maximum ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Repetitive peak reverse
voltage
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
Symbol
Conditions
FST6340M FST6345M FST6360M FST6380M FST63100M
VRRM
40
VRMS
VDC
Tj
Tstg
45
60
28
32
42
40
-55 to 150
-55 to 150
45
60
-55 to 150
-55 to 150
-55 to 150
-55 to 150
Unit
100
V
56
70
V
80
100
-55 to 150
-55 to 150
V
°C
°C
80
-55 to 150
-55 to 150
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Symbol
Conditions
Average forward current (per
pkg)
IF(AV)
TC = 125 °C
60
60
60
60
60
A
Peak forward surge current
(per leg)
IFSM
tp = 8.3 ms, half sine
600
600
600
600
600
A
Maximum instantaneous
forward voltage (per leg)
VF
IFM = 30 A, Tj = 25 °C
0.70
7.0
0.75
0.84
0.84
V
IR
Tj = 25 °C
Tj = 100 °C
1
10
1
10
1
10
1
10
1
10
mA
Tj = 150 °C
30
30
30
30
30
1.20
1.20
1.20
1.20
1.20
Parameter
Maximum Instantaneous
reverse current at rated DC
blocking voltage (per leg)
FST6340M FST6345M FST6360M FST6380M FST63100M
Unit
Thermal characteristics
Thermal resistance, junction case (per leg)
RΘJC
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1
°C/W
FST6340M thru FST63100M
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2
FST6340M thru FST63100M
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
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3
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