NSQA6V8AW5T2 Series Low Capacitance Quad Array for ESD Protection This integrated transient voltage suppressor device (TVS) is designed for applications requiring transient overvoltage protection. It is intended for use in sensitive equipment such as computers, printers, business machines, communication systems, medical equipment, and other applications. Its integrated design provides very effective and reliable protection for four separate lines using only one package. These devices are ideal for situations where board space is at a premium. http://onsemi.com 1 5 2 3 Features 4 • ESD Protection: IEC61000−4−2: Level 4 MILSTD 883C − Method 3015−6: Class 3 Four Separate Unidirectional Configurations for Protection Low Leakage Current < 1 A Power Dissipation: 380 mW Small SC−88A SMT Package Low Capacitance Pb−Free Package is Available SC−88A/SOT−323 CASE 419A MARKING DIAGRAM Benefits • Provides Protection for ESD Industry Standards: IEC 61000, HBM • Protects the Line Against Transient Voltage Conditions in Either • • 5 6x Direction Minimize Power Consumption of the System Minimize PCB Board Space 1 x Typical Applications • • • • • 4 Instrumentation Equipment Serial and Parallel Ports Microprocessor Based Equipment Notebooks, Desktops, Servers Cellular and Portable Equipment D 2 D • • • • • • 3 = H for NSQA6V8AW5T2 X for NSQA12VAW5T2 = One Digit Date Code ORDERING INFORMATION Device Package Shipping† NSQA6V8AW5T2 SC−88A 3000/Tape & Reel NSQA6V8AW5T2G NSQA12VAW5T2 NSQA12VAW5T2G SC−88A 3000/Tape & Reel (Pb−Free) SC−88A 3000/Tape & Reel SC−88A 3000/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2004 November, 2004 − Rev. 3 1 Publication Order Number: NSQA6V8AW5T2/D NSQA6V8AW5T2 Series MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Symbol Value Unit Peak Power Dissipation 8 20 sec Double Exponential Waveform (Note 1) PPK 20 W Steady State Power − 1 Diode (Note 2) PD 380 mW 327 3.05 °C/W mW/°C Thermal Resistance − Junction−to−Ambient Above 25°C, Derate RJA Operating Junction Temperature Range TJ −40 to +125 °C Storage Temperature Range Tstg −55 to +150 °C Lead Solder Temperature − Maximum 10 Seconds Duration TL 260 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Non−repetitive current pulse per Figure 1. 2. Only 1 diode under power. For all 4 diodes under power, PD will be 25%. Mounted on FR4 board with min pad. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) NSQA6V8AW5T2 Characteristic Symbol Min Typ Max Unit VBR 6.4 6.8 7.1 V Leakage Current (VRWM = 5.0 V) IR − − 1.0 A Clamping Voltage 1 (IPP = 1.6 A, 8 20 sec Waveform) VC − − 13 V Maximum Peak Pulse Current (8 20 sec Waveform) IPP − − 1.6 A Junction Capacitance − (VR = 0 V, f = 1 MHz) − (VR = 3.0 V, f = 1 MHz) CJ − − 12 6.7 15 9.5 pF VBR 11.4 12.0 12.7 V Leakage Current (VRWM = 9.0 V) IR − − 0.05 A Zener Impedence (IT = 5 mA) ZZ − − 30 Clamping Voltage 1 (IPP = 0.9 A, 8 20 sec Waveform) VC − − 23 V Maximum Peak Pulse Current (8 20 sec Waveform) IPP − − 0.9 A Junction Capacitance − (VR = 0 V, f = 1 MHz) CJ − − 15 pF Breakdown Voltage (IT = 1 mA) (Note 3) NSQA12VAW5T2 Breakdown Voltage (IT = 5 mA) (Note 3) 3. VBR is measured at pulse test current IT. http://onsemi.com 2 NSQA6V8AW5T2 Series 110 100 % OF RATED POWER OR IPP Ppk, PEAK SURGE POWER (W) 100 10 10 100 80 70 60 50 40 30 20 10 0 1 1 90 1000 50 75 100 Figure 2. Power Derating Curve 150 14 0.14 0.12 0.10 0.08 0.06 0.04 0.02 12 TA = 25°C 10 8 6V 6 4 12 V 2 0 0 −60 −40 0 20 40 60 80 100 0 3 4 Figure 3. Reverse Leakage versus Temperature Figure 4. Capacitance 70 60 HALF VALUE IRSM/2 @ 20 s 50 5 6 1 PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAY = 8 s 40 tP 20 2 BIAS VOLTAGE (V) 80 30 1 T, TEMPERATURE (°C) PEAK VALUE IRSM @ 8 s tr 90 −20 IF, FORWARD CURRENT (A) 100 0.1 0.01 10 0 125 Figure 1. Pulse Width TYPICAL CAPACITANCE (pF) 1 MHz FREQUENCY IR, REVERSE LEAKAGE (A) 25 TA, AMBIENT TEMPERATURE (°C) 0.16 % OF PEAK PULSE CURRENT 0 t, TIME (s) TA = 25°C 0.001 0 20 40 60 0.6 80 0.8 1.0 1.2 1.4 t, TIME (s) VF, FORWARD VOLTAGE (V) Figure 5. 8 × 20 s Pulse Waveform Figure 6. Forward Voltage http://onsemi.com 3 1.6 1.8 NSQA6V8AW5T2 Series PACKAGE DIMENSIONS SC−88A/SOT−323 5−LEAD PACKAGE CASE 419A−02 ISSUE G A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419A−01 OBSOLETE. NEW STANDARD 419A−02. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. G 5 4 −B− S 1 2 3 D 5 PL 0.2 (0.008) B M DIM A B C D G H J K N S M N J INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC −−− 0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC −−− 0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 C K H SOLDERING FOOTPRINT* 0.50 0.0197 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 4 For additional information, please contact your local Sales Representative. NSQA6V8AW5T2/D