BCR20AM-12LB Triac Medium Power Use (The product guaranteed maximum junction temperature of 150°C) REJ03G0458-0300 Rev.3.00 Nov 30, 2007 Features • Non-Insulated Type • Planar Passivation Type • IT (RMS) : 20 A • VDRM : 600 V • IFGTI, IRGTI, IRGT III : 30 mA (20 mA)Note6 Outline RENESAS Package code: PRSS0004AA-A (Package name: TO-220) 4 2, 4 3 1 12 1. 2. 3. 4. T1 Terminal T2 Terminal Gate Terminal T2 Terminal 3 Applications Vacuum cleaner, electric heater, light dimmer, copying machine, and controller for other motor and heater Warning 1. Refer to the recommended circuit values around the triac before using. 2. Be sure to exchange the specification before using. Otherwise, general triacs with the maximum junction temperature of 125°C will be supplied. Maximum Ratings Parameter Symbol Repetitive peak off-state voltageNote1 Non-repetitive peak off-state voltageNote1 REJ03G0458-0300 Page 1 of 7 Rev.3.00 Nov 30, 2007 VDRM VDSM Voltage class 12 600 720 Unit V V BCR20AM-12LB (The product guaranteed maximum junction temperature of 150°C) Parameter RMS on-state current Symbol IT (RMS) Ratings 20 Unit A Surge on-state current ITSM 200 A I2 t 167 A2s PGM PG (AV) VGM IGM Tj Tstg — 5 0.5 10 2 – 40 to +150 – 40 to +150 2.0 W W V A °C °C g I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Mass Conditions Commercial frequency, sine full wave Note3 360° conduction, Tc = 134°C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Notes: 1. Gate open. Electrical Characteristics Parameter Repetitive peak off-state current On-state voltage Symbol IDRM VTM Min. — — Typ. — — Max. 2.0/3.0 1.5 Unit mA V Test conditions Tj = 125°C/150°C, VDRM applied Tc = 25°C, ITM = 30 A, Instantaneous measurement Gate trigger voltageNote2 Ι ΙΙ ΙΙΙ VFGTΙ VRGTΙ VRGTΙΙΙ — — — — — — 1.5 1.5 1.5 V V V Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω Gate trigger currentNote2 Ι ΙΙ ΙΙΙ IFGTΙ IRGTΙ IRGTΙΙΙ — — — — — — 30Note6 30Note6 30Note6 mA mA mA Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω VGD Rth (j-c) 0.2/0.1 — — — — 0.8 V °C/W Tj = 125°C/150°C, VD = 1/2 VDRM Junction to caseNote3 Note4 (dv/dt)c 10/1 — — V/µs Tj = 125°C/150°C Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state Note5 commutating voltage Notes: 2. 3. 4. 5. 6. Measurement using the gate trigger characteristics measurement circuit. Case temperature is measured at the T2 tab 1.5 mm away from the molded case. The contact thermal resistance Rth (c-f) in case of greasing is 1.0°C/W. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. High sensitivity (IGT ≤ 20 mA) is also available. (IGT item: 1) Test conditions 1. Junction temperature Tj = 125°C/150°C 2. Rate of decay of on-state commutating current (di/dt)c = –10 A/ms 3. Peak off-state voltage VD = 400 V REJ03G0458-0300 Page 2 of 7 Rev.3.00 Nov 30, 2007 Commutating voltage and current waveforms (inductive load) Supply Voltage Time Main Current (di/dt)c Time Main Voltage (dv/dt)c Time VD BCR20AM-12LB (The product guaranteed maximum junction temperature of 150°C) Performance Curves Maximum On-State Characteristics Rated Surge On-State Current 10 7 5 3 2 240 2 10 7 5 3 2 Tj = 150°C 1 10 7 5 3 2 Tj = 25°C Surge On-State Current (A) On-State Current (A) 3 100 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 120 80 40 0 0 10 2 3 5 7 101 2 3 5 7 102 Gate Characteristics (I, II and III) Gate Trigger Current vs. Junction Temperature VGM = 10V 10 7 5 3 VGT = 1.5V 2 PGM = 5W IGM = 2A IFGT I, IRGT I, IRGT III 10–1 VGD = 0.1V 7 5 1 2 10 2 3 5 710 2 3 5 7103 2 3 5 7104 102 7 5 3 2 1 10 7 5 3 2 Typical Example IFGT I IRGT I IRGT III 0 10 –60 –40–20 0 20 40 60 80 100 120 140 Junction Temperature (°C) Gate Trigger Voltage vs. Junction Temperature Maximum Transient Thermal Impedance Characteristics (Junction to case) 3 10 7 5 Typical Example 3 2 2 10 7 5 3 2 101 –60 –40–20 0 20 40 60 80 100 120 140 160 Junction Temperature (°C) REJ03G0458-0300 Page 3 of 7 103 7 5 3 2 Gate Current (mA) Rev.3.00 Nov 30, 2007 Transient Thermal Impedance (°C/W) 100 7 5 3 2 PG(AV) = 0.5W Gate Trigger Current (Tj = t°C) × 100 (%) Gate Trigger Current (Tj = 25°C) Conduction Time (Cycles at 60Hz) 1 Gate Voltage (V) 160 On-State Voltage (V) 5 3 2 Gate Trigger Voltage (Tj = t°C) × 100 (%) Gate Trigger Voltage (Tj = 25°C) 200 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 –1 10 2 3 5 7100 2 3 5 7101 2 3 5 7102 2 3 5 7103 Conduction Time (Cycles at 60Hz) BCR20AM-12LB (The product guaranteed maximum junction temperature of 150°C) Allowable Case Temperature vs. RMS On-State Current 40 30 360° Conduction Resistive, inductive loads 20 10 120 Curves apply regardless of conduction angle 100 80 60 40 360° Conduction inductive loads 5 10 15 20 25 0 0 30 5 10 15 20 25 30 RMS On-State Current (A) RMS On-State Current (A) Allowable Ambient Temperature vs. RMS On-State Current Allowable Ambient Temperature vs. RMS On-State Current All fins are black painted aluminum and greased 140 160 × 160 × t2.3 100 × 100 × t2.3 120 100 60 × 60 × t2.3 80 60 Curves apply regardless of 40 conduction angle Resistive, 20 inductive loads Natural convection 0 0 5 10 15 20 25 160 Ambient Temperature (°C) 160 Ambient Temperature (°C) 140 20 Resistive, 0 0 Repetitive Peak Off-State Current (Tj = t°C) × 100 (%) Repetitive Peak Off-State Current (Tj = 25°C) Case Temperature (°C) 160 140 120 Natural convection No Fins Curves apply regardless of conduction angle Resistive, inductive loads 100 80 60 40 20 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 30 RMS On-State Current (A) RMS On-State Current (A) Repetitive Peak Off-State Current vs. Junction Temperature Holding Current vs. Junction Temperature 5 3 Typical Example 2 5 10 7 5 3 2 4 10 7 5 3 2 3 10 7 5 3 2 2 10 –60 –40–20 0 20 40 60 80 100 120 140 160 REJ03G0458-0300 Page 4 of 7 Junction Temperature (°C) Rev.3.00 Nov 30, 2007 Holding Current (Tj = t°C) × 100 (%) Holding Current (Tj = 25°C) On-State Power Dissipation (W) Maximum On-State Power Dissipation 103 7 5 Typical Example 3 2 102 7 5 3 2 101 –60 –40–20 0 20 40 60 80 100 120 140 160 Junction Temperature (°C) BCR20AM-12LB (The product guaranteed maximum junction temperature of 150°C) Breakover Voltage vs. Junction Temperature Distribution T2+, G– Typical Example 102 7 5 3 2 1 10 7 5 3 T2+, G+ Typical Example 2 T2–, G– 0 10 –60 –40–20 0 20 40 60 80 100 120 140 160 Typical Example 140 120 100 80 60 40 20 0 –60 –40–20 0 20 40 60 80 100 120 140 160 Junction Temperature (°C) Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj=125°C) Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj=150°C) 160 Typical Example Tj = 125°C 140 120 100 III Quadrant 80 60 40 I Quadrant 20 0 1 10 2 3 5 7102 2 3 5 7103 2 3 5 7104 160 Typical Example Tj = 150°C 140 120 100 80 III Quadrant 60 40 I Quadrant 20 0 1 10 2 3 5 7102 2 3 5 7103 2 3 5 7104 Rate of Rise of Off-State Voltage (V/µs) Rate of Rise of Off-State Voltage (V/µs) Commutation Characteristics (Tj=125°C) Commutation Characteristics (Tj=150°C) 2 10 7 5 3 2 2 Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT τ Time 101 7 5 3 2 Minimum Characteristics Value 0 10 7 3 Typical Example Tj = 125°C IT = 4A τ = 500µs VD = 200V f = 3Hz III Quadrant I Quadrant 5 7 10 1 2 3 5 7 10 Rate of Decay of On-State Commutating Current (A/ms) REJ03G0458-0300 Page 5 of 7 Critical Rate of Rise of Off-State Commutating Voltage (V/µs) Critical Rate of Rise of Off-State Commutating Voltage (V/µs) 160 Junction Temperature (°C) Breakover Voltage (dv/dt = xV/µs) × 100 (%) Breakover Voltage (dv/dt = 1V/µs) Breakover Voltage (dv/dt = xV/µs) × 100 (%) Breakover Voltage (dv/dt = 1V/µs) Latching Current (mA) 3 10 7 5 3 2 Breakover Voltage (Tj = t°C) × 100 (%) Breakover Voltage (Tj = 25°C) Latching Current vs. Junction Temperature Rev.3.00 Nov 30, 2007 2 10 7 5 3 2 Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT τ Time 101 7 5 I Quadrant III Quadrant 3 2 Minimum Characteristics Value 0 10 7 3 Typical Example Tj = 150°C IT = 4A τ = 500µs VD = 200V f = 3Hz 5 7 10 1 2 3 5 7 10 Rate of Decay of On-State Commutating Current (A/ms) 2 BCR20AM-12LB (The product guaranteed maximum junction temperature of 150°C) Gate Trigger Current (tw) × 100 (%) Gate Trigger Current (DC) Gate Trigger Current vs. Gate Current Pulse Width 103 7 5 Typical Example IRGT I IRGT III 3 2 IFGT I 102 7 5 3 2 101 0 10 2 3 5 7 101 5 7 102 2 3 Gate Current Pulse Width (µs) Gate Trigger Characteristics Test Circuits 6Ω 6Ω Recommended Circuit Values Around The Triac Load C1 A 6V V Test Procedure I V A V 330Ω Test Procedure III REJ03G0458-0300 Page 6 of 7 330Ω Test Procedure II 6Ω 6V R1 A 6V 330Ω Rev.3.00 Nov 30, 2007 C0 R0 C1 = 0.1 to 0.47µF C0 = 0.1µF R0 = 100Ω R1 = 47 to 100Ω BCR20AM-12LB (The product guaranteed maximum junction temperature of 150°C) Package Dimensions Package Name TO-220 JEITA Package Code SC-46 Previous Code RENESAS Code PRSS0004AA-A MASS[Typ.] 2.0g 10.5Max Unit: mm 4.5 φ3.6 3.8Max 12.5Min 16Max 7.0 3.2 1.3 1.0 0.8 0.5 2.54 2.6 4.5Max 2.54 Order Code Lead form Straight type Lead form Standard packing Vinyl sack Plastic Magazine (Tube) Quantity 100 50 Standard order code Type name Type name – Lead forming code Note : Please confirm the specification about the shipping in detail. REJ03G0458-0300 Page 7 of 7 Rev.3.00 Nov 30, 2007 Standard order code example BCR20AM-12LB BCR20AM-12LB-A8 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes warranties or representations with respect to the accuracy or completeness of the information contained in this document nor grants any license to any intellectual property rights or any other rights of Renesas or any third party with respect to the information in this document. 2. Renesas shall have no liability for damages or infringement of any intellectual property or other rights arising out of the use of any information in this document, including, but not limited to, product data, diagrams, charts, programs, algorithms, and application circuit examples. 3. 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