DU2880U
RF Power MOSFET Transistor
80 W, 2 - 175 MHz, 28 V
Rev. V1
Package Outline
Features
N-Channel enhancement mode device
DMOS structure
Lower capacitances for broadband operation
High saturated output power
Lower noise figure than bipolar devices
RoHS Compliant
ABSOLUTE MAXIMUM RATINGS AT 25° C
Parameter
Symbol
Rating
Units
Drain-Source Voltage
VDS
65
V
Gate-Source Voltage
VGS
20
V
Drain-Source Current
IDS
16
A
Power Dissipation
PD
206
W
Junction Temperature
TJ
200
°C
Storage Temperature
TSTG
-65 to +150
°C
Thermal Resistance
θJC
0.85
°C/W
LETTER
TYPICAL DEVICE IMPEDANCE
MILLIMETERS
INCHES
DIM
MIN
MAX
MIN
MAX
A
24.64
24.89
.970
.980
B
18.29
18.54
.720
.730
F (MHz)
ZIN (Ω)
ZLOAD (Ω)
30
5.4 - j4.4
5.7 +j4.7
50
2.5 - j4.4
3.4 + j3.5
C
25.91
26.42
1.020
1.040
100
1.6 - j3.4
2.4 + j2.4
D
12.60
12.85
.496
.506
175
0.7 - j1.2
1.7 + j0.8
E
6.22
6.48
.245
.255
F
5.59
5.84
.220
.230
G
3.05
3.30
.120
.130
H
2.21
2.59
.087
.102
J
3.91
4.42
.154
.174
K
6.53
7.34
.257
.289
L
.10
.15
.004
.006
VDD = 28V, IDQ = 400mA, POUT = 80 W
ZIN is the series equivalent input impedance of the device
from gate to source.
ZLOAD is the optimum series equivalent load impedance
as measured from drain to ground.
ELECTRICAL CHARACTERISTICS AT 25°C
Parameter
Symbol
Min
Max
Units
BVDSS
65
-
V
VGS = 0.0 V , IDS = 20.0 mA
Drain-Source Leakage Current
IDSS
-
4.0
mA
VGS = 28.0 V , VGS = 0.0 V
Gate-Source Leakage Current
IGSS
-
4.0
µA
VGS = 20.0 V , VDS = 0.0 V
VGS(TH)
2.0
6.0
V
VDS = 10.0 V , IDS = 400.0 mA
Forward Transconductance
GM
2.0
-
S
VDS = 10.0 V , IDS = 4.0 A , Δ VGS = 1.0V, 80 μs Pulse
Input Capacitance
CISS
-
180
pF
VDS = 28.0 V , F = 1.0 MHz
Output Capacitance
COSS
-
160
pF
VDS = 28.0 V , F = 1.0 MHz
Reverse Capacitance
CRSS
-
32
pF
VDS = 28.0 V , F = 1.0 MHz
Power Gain
GP
13
-
dB
VDD = 28.0 V, IDQ = 400 mA, POUT = 80.0 W F =175 MHz
Drain Efficiency
ŋD
60
-
%
VDD = 28.0 V, IDQ = 400 mA, POUT = 80.0 W F =175 MHz
VSWR-T
-
30:1
-
VDD = 28.0 V, IDQ = 400 mA, POUT = 80.0 W F =175 MHz
Drain-Source Breakdown Voltage
Gate Threshold Voltage
1
Load Mismatch Tolerance
Test Conditions
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Visit www.macom.com for additional data sheets and product information.
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DU2880U
RF Power MOSFET Transistor
80 W, 2 - 175 MHz, 28 V
Rev. V1
Typical Broadband Performance Curves
GAIN VS FREQUENCY
VDD=28 V IDQ=400 mA POUT=80 W
25
EFFICIENCY (%)
GAIN (dB)
80
EFFICIENCY VS FREQUENCY
VDD=28 V IDQ=400 mA POUT=80 W
70
60
20
15
10
50
25
50
100
150
25
175
50
FREQUENCY (MHz)
150
175
FREQUENCY (MHz)
POWER OUTPUT VS POWER INPUT
VDD =28 V IDQ =400 mA
120
100
120
POWER OUTPUT VS SUPPLY VOLTAGE
IDQ =400 mA F=175MHz PIN =3.0 W
100
175MHz
100MHz
80
POWER OUTPUT (W)
POWER OUTPUT (W)
30MHz
60
40
20
0
0.1
0.2
0.3
1
2
POWER INPUT (W)
3
4
100
80
60
40
20
0
5
13
15
20
25
30
SUPPLY VOLTAGE (V)
2
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
33
DU2880U
RF Power MOSFET Transistor
80 W, 2 - 175 MHz, 28 V
Rev. V1
TEST FIXTURE SCHEMATIC
TEST FIXTURE ASSEMBLY
3
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
DU2880U
RF Power MOSFET Transistor
80 W, 2 - 175 MHz, 28 V
Rev. V1
M/A-COM Technology Solutions Inc. All rights reserved.
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4
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support