Lyontek LY62256SL-55LLIT 32k x 8 bit low power cmos sram Datasheet


LY62256
32K X 8 BIT LOW POWER CMOS SRAM
Rev. 2.10
REVISION HISTORY
Revision
Rev. 1.0.
Rev. 2.0.
Rev. 2.1.
Rev. 2.2
Rev. 2.3
Rev. 2.4
Rev. 2.5
Rev. 2.6
Rev. 2.7
Rev. 2.8
Rev. 2.9
Rev. 2.10
Description
Initial Issue
Revised Vcc Range(Vcc=4.5~5.5V => 2.7~5.5V)
Revised ISB1
Adding PKG type : skinny P-DIP
Revised VIH(min)=2.4V, VIL(max)=0.6V
Revised VIH(min)=2.4V, VIL(max)=0.6V (VCC=2.7~3.6V)
VIH(min)=2.4V, VIL(max)=0.8V (VCC=4.5~5.5V)
Revised STSOP Package Outline Dimension
Added SL grade
Added ISB1/IDR values when TA = 25℃ and TA = 40℃
Revised FEATURES & ORDERING INFORMATION Lead
free and green package available to Green package available
Added packing type in ORDERING INFORMATION
Revised ISB1(MAX)
Revised VTERM to VT1 and VT2
Revised Test Condition of ISB1/IDR
Deleted TSOLDER in ABSOLUTE MAXIMUN RATINGS
Revised PACKAGE OUTLINE DIMENSION in page 8 & 9
Revised PACKAGE OUTLINE DIMENSION in page 10
Revised ORDERING INFORMATION in page 12
Revised PACKAGE OUTLINE DIMENSION in page 9
Revised ORDERING INFORMATION in page 14 & 15
Deleted WRITE CYCLE Notes :
1.WE#,CE# must be high during all address transitions. in page 6.
Lyontek Inc. reserves the rights to change the specifications and products without notice.
2F, No.17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
0
Issue Date
Jul.25.2004
May.4.2005
May.13.2005
Aug.29.2005
Feb.24.2006
Jul.31.2006
Mar.26.2008
Mar.30.2009
Dec.18.2009
May.7.2010
May.7.2010
Aug.25.2010
Jun.28.2016

LY62256
32K X 8 BIT LOW POWER CMOS SRAM
Rev. 2.10
FEATURES
GENERAL DESCRIPTION
 Fast access time : 35/55/70ns
 Low power consumption:
Operating current : 20/15/10mA (TYP.)
Standby current : 1A (TYP.)
 Single 2.7~5.5V power supply
 All inputs and outputs TTL compatible
 Fully static operation
 Tri-state output
 Data retention voltage : 1.5V (MIN.)
 Green package available
 Package : 28-pin 600 mil P-DIP
28-pin 330 mil SOP
28-pin 8mm x 13.4mm STSOP
28-pin 300 mil Skinny P-DIP
The LY62256 is a 262,144-bit low power CMOS static
random access memory organized as 32,768 words
by 8 bits. It is fabricated using very high performance,
high reliability CMOS technology. Its standby current
is stable within the range of operating temperature.
The LY62256 is well designed for low power
application, and particularly well suited for battery
back-up nonvolatile memory application.
The LY62256 operates from a single power supply
of 2.7~5.5V and all inputs and outputs are fully TTL
compatible
PRODUCT FAMILY
Product
Family
LY62256
LY62256(E)
LY62256(I)
Operating
Temperature
0 ~ 70℃
-20 ~ 80℃
-40 ~ 85℃
Vcc Range
Speed
2.7 ~ 5.5V
2.7 ~ 5.5V
2.7 ~ 5.5V
35/55/70ns
35/55/70ns
35/55/70ns
FUNCTIONAL BLOCK DIAGRAM
PIN DESCRIPTION
Vcc
Vss
A0-A14
DECODER
DQ0-DQ7
I/O DATA
CIRCUIT
CE#
WE#
OE#
CONTROL
CIRCUIT
Power Dissipation
Standby(ISB1,TYP.) Operating(Icc,TYP.)
1µA
20/15/10mA
1µA
20/15/10mA
1µA
20/15/10mA
32Kx8
MEMORY ARRAY
SYMBOL
DESCRIPTION
A0 - A14
Address Inputs
DQ0 – DQ7
Data Inputs/Outputs
CE#
Chip Enable Input
WE#
Write Enable Input
OE#
Output Enable Input
VCC
Power Supply
VSS
Ground
COLUMN I/O
Lyontek Inc. reserves the rights to change the specifications and products without notice.
2F, No.17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
1

LY62256
32K X 8 BIT LOW POWER CMOS SRAM
Rev. 2.10
PIN CONFIGURATION
ABSOLUTE MAXIMUN RATINGS*
PARAMETER
Voltage on VCC relative to VSS
Voltage on any other pin relative to VSS
SYMBOL
VT1
VT2
Operating Temperature
TA
Storage Temperature
Power Dissipation
DC Output Current
TSTG
PD
IOUT
RATING
-0.5 to 6.5
-0.5 to VCC+0.5
0 to 70(C grade)
-20 to 80(E grade)
-40 to 85(I grade)
-65 to 150
1
50
UNIT
V
V
℃
℃
W
mA
*Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating
only and functional operation of the device or any other conditions above those indicated in the operational sections of this specification is
not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability.
TRUTH TABLE
MODE
Standby
Output Disable
Read
Write
Note:
CE#
H
L
L
L
OE#
X
H
L
X
WE#
X
H
H
L
I/O OPERATION
High-Z
High-Z
DOUT
DIN
H = VIH, L = VIL, X = Don't care.
Lyontek Inc. reserves the rights to change the specifications and products without notice.
2F, No.17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
2
SUPPLY CURRENT
ISB,ISB1
ICC,ICC1
ICC,ICC1
ICC,ICC1

LY62256
32K X 8 BIT LOW POWER CMOS SRAM
Rev. 2.10
DC ELECTRICAL CHARACTERISTICS
PARAMETER
Supply Voltage
Input High Voltage
SYMBOL
VCC
VIH*1
Input Low Voltage
VIL*2
Input Leakage Current
Output Leakage
Current
Output High Voltage
Output Low Voltage
ILI
ILO
VOH
VOL
ICC
Average Operating
Power supply Current
ICC1
ISB
Standby Power
Supply Current
ISB1
TEST CONDITION
VCC=2.7~3.6V
VCC=4.5~5.5V
VCC ≧ VIN ≧ VSS
VCC ≧ VOUT ≧ VSS,
Output Disabled
IOH = -1mA
IOL = 2mA
-35
Cycle time = Min.
CE# = VIL , II/O = 0mA
-55
Other pins at VIL or VIH -70
Cycle time = 1µs
CE#≦0.2V and II/O = 0mA
other pins at 0.2V or VCC-0.2V
CE# = VIH, other pins at VIL or VIH
LL
LLE/LLI
SL*5 25℃
CE# ≧VCC-0.2V
SLE*5
Others at 0.2V or
SLI*5 40℃
VCC - 0.2V
SL
SLE/SLI
MIN.
2.7
2.4
- 0.5
- 0.5
-1
TYP. *4 MAX.
3.3
5.5
VCC+0.5
0.6
0.8
1
UNIT
V
V
V
V
µA
-1
-
1
µA
2.4
-
3.0
20
15
10
0.4
50
45
40
V
V
mA
mA
mA
-
3
10
mA
-
1
1
1
3
20
30
mA
µA
µA
-
1
3
µA
-
1.5
4
µA
-
1
1
10
20
µA
µA
Notes:
1. VIH(max) = VCC + 3.0V for pulse width less than 10ns.
2. VIL(min) = VSS - 3.0V for pulse width less than 10ns.
3. Over/Undershoot specifications are characterized, not 100% tested.
4. Typical values are included for reference only and are not guaranteed or tested.
Typical valued are measured at VCC = VCC(TYP.) and TA = 25℃
5. This parameter is measured at VCC = 3.0V
CAPACITANCE (TA = 25℃, f = 1.0MHz)
PARAMETER
Input Capacitance
Input/Output Capacitance
SYMBOL
CIN
CI/O
MIN.
-
MAX
6
8
Note : These parameters are guaranteed by device characterization, but not production tested.
AC TEST CONDITIONS
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Reference Levels
Output Load
0.2V to VCC - 0.2V
3ns
1.5V
CL = 50pF + 1TTL, IOH/IOL = -1mA/2mA
Lyontek Inc. reserves the rights to change the specifications and products without notice.
2F, No.17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
3
UNIT
pF
pF

LY62256
32K X 8 BIT LOW POWER CMOS SRAM
Rev. 2.10
AC ELECTRICAL CHARACTERISTICS
(1) READ CYCLE
PARAMETER
Read Cycle Time
Address Access Time
Chip Enable Access Time
Output Enable Access Time
Chip Enable to Output in Low-Z
Output Enable to Output in Low-Z
Chip Disable to Output in High-Z
Output Disable to Output in High-Z
Output Hold from Address Change
(2) WRITE CYCLE
PARAMETER
Write Cycle Time
Address Valid to End of Write
Chip Enable to End of Write
Address Set-up Time
Write Pulse Width
Write Recovery Time
Data to Write Time Overlap
Data Hold from End of Write Time
Output Active from End of Write
Write to Output in High-Z
SYM.
tRC
tAA
tACE
tOE
tCLZ*
tOLZ*
tCHZ*
tOHZ*
tOH
SYM.
tWC
tAW
tCW
tAS
tWP
tWR
tDW
tDH
tOW*
tWHZ*
LY62256-35
MIN.
MAX.
35
35
35
25
10
5
15
15
10
-
LY62256-55
MIN.
MAX.
55
55
55
30
10
5
20
20
10
-
LY62256-70
MIN.
MAX.
70
70
70
35
10
5
25
25
10
-
UNIT
LY62256-35
MIN.
MAX.
35
30
30
0
25
0
20
0
5
15
LY62256-55
MIN.
MAX.
55
50
50
0
45
0
25
0
5
20
LY62256-70
MIN.
MAX.
70
60
60
0
55
0
30
0
5
25
UNIT
*These parameters are guaranteed by device characterization, but not production tested.
Lyontek Inc. reserves the rights to change the specifications and products without notice.
2F, No.17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
4
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns

LY62256
32K X 8 BIT LOW POWER CMOS SRAM
Rev. 2.10
TIMING WAVEFORMS
READ CYCLE 1 (Address Controlled) (1,2)
tRC
Address
tAA
Dout
tOH
Previous Data Valid
Data Valid
READ CYCLE 2 (CE# and OE# Controlled) (1,3,4,5)
tRC
Address
tAA
CE#
tACE
OE#
tOE
tOH
tOHZ
tCHZ
tOLZ
tCLZ
Dout
High-Z
Data Valid
Notes :
1.WE# is high for read cycle.
2.Device is continuously selected OE# = low, CE# = low.
3.Address must be valid prior to or coincident with CE# = low,; otherwise tAA is the limiting parameter.
4.tCLZ, tOLZ, tCHZ and tOHZ are specified with CL = 5pF. Transition is measured ±500mV from steady state.
5.At any given temperature and voltage condition, tCHZ is less than tCLZ , tOHZ is less than tOLZ.
Lyontek Inc. reserves the rights to change the specifications and products without notice.
2F, No.17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
5
High-Z

LY62256
32K X 8 BIT LOW POWER CMOS SRAM
Rev. 2.10
WRITE CYCLE 1 (WE# Controlled) (1,2,4,5)
WRITE CYCLE 2 (CE# Controlled) (1,4,5)
tWC
Address
tAW
CE#
tAS
tWR
tCW
tWP
WE#
tWHZ
Dout
High-Z
(4)
tDW
tDH
Data Valid
Din
Notes :
1.A write occurs during the overlap of a low CE#, low WE#.
2.During a WE# controlled write cycle with OE# low, tWP must be greater than tWHZ + tDW to allow the drivers to turn off and data to be placed
on the bus.
3.During this period, I/O pins are in the output state, and input signals must not be applied.
4.If the CE# low transition occurs simultaneously with or after WE# low transition, the outputs remain in a high impedance state.
5.tOW and tWHZ are specified with CL = 5pF. Transition is measured ±500mV from steady state.
Lyontek Inc. reserves the rights to change the specifications and products without notice.
2F, No.17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
6

LY62256
32K X 8 BIT LOW POWER CMOS SRAM
Rev. 2.10
DATA RETENTION CHARACTERISTICS
PARAMETER
VCC for Data Retention
Data Retention Current
Chip Disable to Data
Retention Time
Recovery Time
tRC* = Read Cycle Time
SYMBOL
TEST CONDITION
VDR
CE# ≧ VCC - 0.2V
LL/LLE/LLI
SL
25℃
VCC = 1.5V
SLE
CE# ≧ VCC - 0.2V
IDR
40℃
SLI
Others at 0.2V or VCC-0.2V
SL
SLE/SLI
See Data Retention
tCDR
Waveforms (below)
tR
DATA RETENTION WAVEFORM
VDR ≧ 1.5V
Vcc
Vcc(min.)
Vcc(min.)
tCDR
CE#
VIH
tR
CE# ≧ Vcc-0.2V
VIH
Lyontek Inc. reserves the rights to change the specifications and products without notice.
2F, No.17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
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7
MIN.
1.5
-
TYP.
0.5
MAX.
5.5
20
UNIT
V
µA
µA
-
0.5
2
-
1
3
-
0.5
0.5
8
15
µA
µA
µA
0
-
-
ns
tRC*
-
-
ns

LY62256
32K X 8 BIT LOW POWER CMOS SRAM
Rev. 2.10
PACKAGE OUTLINE DIMENSION
28 pin 600 mil P-DIP Package Outline Dimension
NIT
SYM.
A1
A2
B
B1
c
D
E
E1
e
eB
L
S
Q1
Θ
INCH.(BASE)
0.015(MIN)
0.155±0.005
0.020(MAX)
0.060(TYP)
0.012(MAX)
1.470(MAX)
0.6(TYP)
0.55(MAX)
0.100(TYP)
0.650±0.020
0.200(MAX)
0.06(MAX)
0.08(MAX)
15o(MAX)
MM(REF)
0.381(MIN)
3.937±0.127
0.508(MAX)
1.524(TYP)
0.304(MAX)
37.338(MAX)
15.24(TYP)
13.970(MAX)
2.540(TYP)
16.510±0.508
5.080(MAX)
1.524(MAX)
2.032(MAX)
15o(MAX)
Lyontek Inc. reserves the rights to change the specifications and products without notice.
2F, No.17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
8

LY62256
32K X 8 BIT LOW POWER CMOS SRAM
Rev. 2.10
28 pin 330 mil SOP Package Outline Dimension
UNIT
SYM.
A
A1
A2
b
c
D
E
E1
e
L
L1
S
y
Θ
INCH(BASE)
0.120(MAX)
0.002(MIN)
0.098±0.005
0.016(TYP)
0.010(TYP)
0.728(MAX)
0.340(MAX)
0.465±0.012
0.050(TYP)
0.038(MAX)
0.067±0.008
0.047(MAX)
0.004(MAX)
0o～10o
MM(REF)
3.048(MAX)
0.05(MIN)
2.489±0.127
0.406(TYP)
0.254(TYP)
18.491(MAX)
8.636(MAX)
11.811±0.305
1.270(TYP)
0.965(MAX)
1.702 ±0.203
1.194(MAX)
0.102(MAX)
0o～10o
Lyontek Inc. reserves the rights to change the specifications and products without notice.
2F, No.17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
9

LY62256
32K X 8 BIT LOW POWER CMOS SRAM
Rev. 2.10
28 pin 8x13.4mm STSOP Package Outline Dimension
SYMBOLS
A
A1
A2
b
c
HD
D
E
e
L
L1
Y
Θ
DIMENSIONS IN MILLIMETERS
MIN
NOM
MAX
1.00
1.10
1.20
0.05
0.15
0.91
1.00
1.05
0.17
0.22
0.27
0.07
0.15
0.23
13.20
13.40
13.60
11.60
11.80
12.00
7.80
8.00
8.20
0.55
0.30
0.50
0.70
0.675
0.00
0.076
0°
3°
5°
DIMENSIONS IN INCHES
MIN
NOM
MAX
0.040
0.043
0.047
0.002
0.006
0.036
0.039
0.041
0.007
0.009
0.011
0.003
0.006
0.009
0.520
0.528
0.535
0.457
0.465
0.472
0.307
0.315
0.323
0.0216
0.012
0.020
0.028
0.027
0.000
0.003
0°
3°
5°
Lyontek Inc. reserves the rights to change the specifications and products without notice.
2F, No.17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
10

LY62256
Rev. 2.10
32K X 8 BIT LOW POWER CMOS SRAM
28 pin 300 mil P-DIP Package Outline Dimension
Lyontek Inc. reserves the rights to change the specifications and products without notice.
2F, No.17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
11

LY62256
32K X 8 BIT LOW POWER CMOS SRAM
Rev. 2.10
ORDERING INFORMATION
Package Type
28-pin 600mil P-DIP
Access Time
(Speed)(ns)
35
55
70
Power Type
Ultra Low Power
Temperature
Range(℃)
Packing
Type
Lyontek Item No.
0℃~70℃
Tube
LY62256PL-35LL
-20℃~80℃
Tube
LY62256PL-35LLE
-40℃~85℃
Tube
LY62256PL-35LLI
Special
0℃~70℃
Tube
LY62256PL-35SL
Ultra Low Power
-20℃~80℃
Tube
LY62256PL-35SLE
-40℃~85℃
Tube
LY62256PL-35SLI
0℃~70℃
Tube
LY62256PL-55LL
-20℃~80℃
Tube
LY62256PL-55LLE
-40℃~85℃
Tube
LY62256PL-55LLI
Special
0℃~70℃
Tube
LY62256PL-55SL
Ultra Low Power
-20℃~80℃
Tube
LY62256PL-55SLE
-40℃~85℃
Tube
LY62256PL-55SLI
0℃~70℃
Tube
LY62256PL-70LL
-20℃~80℃
Tube
LY62256PL-70LLE
-40℃~85℃
Tube
LY62256PL-70LLI
Special
0℃~70℃
Tube
LY62256PL-70SL
Ultra Low Power
-20℃~80℃
Tube
LY62256PL-70SLE
-40℃~85℃
Tube
LY62256PL-70SLI
Ultra Low Power
Ultra Low Power
Lyontek Inc. reserves the rights to change the specifications and products without notice.
2F, No.17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
12

LY62256
32K X 8 BIT LOW POWER CMOS SRAM
Rev. 2.10
ORDERING INFORMATION
Package Type
Access Time
Power Type
(Speed)(ns)
28-pin 300mil SOP
35
Ultra Low Power
Temperature
Packing
Range(℃)
Type
Tube
LY62256SL-35LL
Tape Reel
LY62256SL-35LLT
Tube
LY62256SL-35LLE
Tape Reel
LY62256SL-35LLET
Tube
LY62256SL-35LLI
Tape Reel
LY62256SL-35LLIT
Tube
LY62256SL-35SL
Tape Reel
LY62256SL-35SLT
-20℃~80℃
Tube
LY62256SL-35SLE
Tape Reel
LY62256SL-35SLET
-40℃~85℃
Tube
LY62256SL-35SLI
Tape Reel
LY62256SL-35SLIT
Tube
LY62256SL-55LL
Tape Reel
LY62256SL-55LLT
Tube
LY62256SL-55LLE
Tape Reel
LY62256SL-55LLET
Tube
LY62256SL-55LLI
Tape Reel
LY62256SL-55LLIT
Tube
LY62256SL-55SL
Tape Reel
LY62256SL-55SLT
-20℃~80℃
Tube
LY62256SL-55SLE
Tape Reel
LY62256SL-55SLET
-40℃~85℃
Tube
LY62256SL-55SLI
Tape Reel
LY62256SL-55SLIT
Tube
LY62256SL-70LL
Tape Reel
LY62256SL-70LLT
Tube
LY62256SL-70LLE
Tape Reel
LY62256SL-70LLET
Tube
LY62256SL-70LLI
Tape Reel
LY62256SL-70LLIT
Tube
LY62256SL-70SL
Tape Reel
LY62256SL-70SLT
0℃~70℃
-20℃~80℃
-40℃~85℃
Special
0℃~70℃
Ultra Low Power
55
Ultra Low Power
0℃~70℃
-20℃~80℃
-40℃~85℃
Special
0℃~70℃
Ultra Low Power
70
Ultra Low Power
0℃~70℃
-20℃~80℃
-40℃~85℃
Special
0℃~70℃
Ultra Low Power
-20℃~80℃
-40℃~85℃
Tube
LY62256SL-70SLE
Tape Reel
LY62256SL-70SLET
Tube
LY62256SL-70SLI
Tape Reel
LY62256SL-70SLIT
Lyontek Inc. reserves the rights to change the specifications and products without notice.
2F, No.17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
13
Lyontek Item No.

LY62256
32K X 8 BIT LOW POWER CMOS SRAM
Rev. 2.10
ORDERING INFORMATION
Package Type
Access Time
Power Type
(Speed)(ns)
28-pin8mmx13.4mm
35
Ultra Low Power
Temperature
Packing
Range(℃)
Type
0℃~70℃
STSOP
-20℃~80℃
-40℃~85℃
Special
0℃~70℃
Ultra Low Power
-20℃~80℃
-40℃~85℃
55
Ultra Low Power
0℃~70℃
-20℃~80℃
-40℃~85℃
Special
0℃~70℃
Ultra Low Power
-20℃~80℃
-40℃~85℃
70
Ultra Low Power
0℃~70℃
-20℃~80℃
-40℃~85℃
Special
0℃~70℃
Ultra Low Power
-20℃~80℃
-40℃~85℃
Tray
LY62256RL-35LL
Tape Reel
LY62256RL-35LLT
Tray
LY62256RL-35LLE
Tape Reel
LY62256RL-35LLET
Tray
LY62256RL-35LLI
Tape Reel
LY62256RL-35LLIT
Tray
LY62256RL-35SL
Tape Reel
LY62256RL-35SLT
Tray
LY62256RL-35SLE
Tape Reel
LY62256RL-35SLET
Tray
LY62256RL-35SLI
Tape Reel
LY62256RL-35SLIT
Tray
LY62256RL-55LL
Tape Reel
LY62256RL-55LLT
Tray
LY62256RL-55LLE
Tape Reel
LY62256RL-55LLET
Tray
LY62256RL-55LLI
Tape Reel
LY62256RL-55LLIT
Tray
LY62256RL-55SL
Tape Reel
LY62256RL-55SLT
Tray
LY62256RL-55SLE
Tape Reel
LY62256RL-55SLET
Tray
LY62256RL-55SLI
Tape Reel
LY62256RL-55SLIT
Tray
LY62256RL-70LL
Tape Reel
LY62256RL-70LLT
Tray
LY62256RL-70LLE
Tape Reel
LY62256RL-70LLET
Tray
LY62256RL-70LLI
Tape Reel
LY62256RL-70LLIT
Tray
LY62256RL-70SL
Tape Reel
LY62256RL-70SLT
Tray
LY62256RL-70SLE
Tape Reel
LY62256RL-70SLET
Tray
LY62256RL-70SLI
Tape Reel
LY62256RL-70SLIT
Lyontek Inc. reserves the rights to change the specifications and products without notice.
2F, No.17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
14
Lyontek Item No.

LY62256
32K X 8 BIT LOW POWER CMOS SRAM
Rev. 2.10
ORDERING INFORMATION
Package Type
28-pin 300mil P-DIP
Access Time
(Speed)(ns)
35
55
70
Power Type
Ultra Low Power
Temperature
Range(℃)
Packing
Type
Lyontek Item No.
0℃~70℃
Tube
LY62256DL-35LL
-20℃~80℃
Tube
LY62256DL-35LLE
-40℃~85℃
Tube
LY62256DL-35LLI
Special
0℃~70℃
Tube
LY62256DL-35SL
Ultra Low Power
-20℃~80℃
Tube
LY62256DL-35SLE
-40℃~85℃
Tube
LY62256DL-35SLI
0℃~70℃
Tube
LY62256DL-55LL
-20℃~80℃
Tube
LY62256DL-55LLE
-40℃~85℃
Tube
LY62256DL-55LLI
Special
0℃~70℃
Tube
LY62256DL-55SL
Ultra Low Power
-20℃~80℃
Tube
LY62256DL-55SLE
-40℃~85℃
Tube
LY62256DL-55SLI
0℃~70℃
Tube
LY62256DL-70LL
-20℃~80℃
Tube
LY62256DL-70LLE
-40℃~85℃
Tube
LY62256DL-70LLI
Special
0℃~70℃
Tube
LY62256DL-70SL
Ultra Low Power
-20℃~80℃
Tube
LY62256DL-70SLE
-40℃~85℃
Tube
LY62256DL-70SLI
Ultra Low Power
Ultra Low Power
Lyontek Inc. reserves the rights to change the specifications and products without notice.
2F, No.17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
15

LY62256
Rev. 2.10
32K X 8 BIT LOW POWER CMOS SRAM
THIS PAGE IS LEFT BLANK INTENTIONALLY.
Lyontek Inc. reserves the rights to change the specifications and products without notice.
2F, No.17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
16