RF NBB-302-T1 Cascadable broadband gaas mmic amplifier dc to 12ghz Datasheet

NBB-302
CASCADABLE BROADBAND
GaAs MMIC AMPLIFIER DC TO 12GHz
RoHS Compliant & Pb-Free Product
Package Style: MPGA, Bowtie, 3x3, Ceramic
Features
„
„
„
„
„
Reliable, Low-Cost HBT Design
Pin 1
Indicator
12.0dB Gain, +13.7dBm
P1dB@2GHz
1
2
3
8
9
4
7
6
5
RF OUT
High P1dB of
[email protected] and
[email protected]
Ground
Ground
Single Power Supply Operation
RF IN
50Ω I/O Matched for High Freq.
Use
Applications
„
„
„
Narrow and Broadband Commercial and Military Radio Designs
Functional Block Diagram
Linear and Saturated Amplifiers
Product Description
Gain Stage or Driver Amplifiers
for MWRadio/Optical Designs
(PTP/PMP/
LMDS/UNII/VSAT/WLAN/Cellular/DWDM)
The NBB-302 cascadable broadband InGaP/GaAs MMIC amplifier is a low-cost,
high-performance solution for general purpose RF and microwave amplification
needs. This 50Ω gain block is based on a reliable HBT proprietary MMIC design,
providing unsurpassed performance for small-signal applications. Designed with an
external bias resistor, the NBB-302 provides flexibility and stability. The NBB-302 is
packaged in a low-cost, surface-mount ceramic package, providing ease of assembly for high-volume tape-and-reel requirements. It is available in either packaged or
chip (NBB-300-D) form, where its gold metallization is ideal for hybrid circuit
designs.
Ordering Information
NBB-302
NBB-302-T1
NBB-302-E
NBB-X-K1
Cascadable Broadband GaAs MMIC Amplifier DC to 12GHz
Tape & Reel, 1000 Pieces
Fully Assembled Evaluation Board
Extended Frequency InGaP Amp Designer’s Tool Kit
Optimum Technology Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
9
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
Rev A6 DS060124
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support, contact RFMD at (+1) 336-678-5570 or [email protected].
1 of 8
NBB-302
Absolute Maximum Ratings
Parameter
Rating
Unit
RF Input Power
+20
dBm
Power Dissipation
300
mW
Device Current
70
mA
Channel Temperature
200
°C
Operating Temperature
-45 to +85
°C
Storage Temperature
-65 to +150
°C
Caution! ESD sensitive device.
The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use,
nor for any infringement of patents, or other rights of third parties, resulting
from its use. No license is granted by implication or otherwise under any patent
or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without
prior notice.
Exceeding any one or a combination of these limits may cause permanent
damage.
Parameter
Min.
Specification
Typ.
Max.
Unit
Overall
Small Signal Power Gain, S21
Condition
VD =+3.9V, ICC =50mA, Z0 =50Ω, TA =+25°C
12.0
13.5
dB
11.0
13.0
dB
f=1.0GHz to 4.0GHz
12.5
dB
f=4.0GHz to 6.0GHz
9.0
f=0.1GHz to 1.0GHz
10.5
dB
f=6.0GHz to 12.0GHz
9.5 (avg.)
dB
f=12.0GHz to 14.0GHz
Gain Flatness, GF
±0.6
dB
Input and Output VSWR
2.4:1
f=0.1GHz to 8.0GHz
f=0.1GHz to 4.0GHz
2.0:1
f=4.0GHz to 12.0GHz
2.8:1
f=12.0GHz to 15.0GHz
Bandwidth, BW
12.5
GHz
BW3 (3dB)
Output Power @
-1dB Compression, P1dB
13.7
dBm
f=2.0GHz
14.8
dBm
f=6.0GHz
11.0
dBm
f=14.0GHz
5.5
dB
f=3.0GHz
+23.5
dBm
f=2.0GHz
-15
dB
Noise Figure, NF
Third Order Intercept, IP3
Reverse Isolation, S12
Device Voltage, VD
Gain Temperature Coefficient,
δGT/δT
3.6
3.9
-0.0015
4.2
f=0.1GHz to 12.0GHz
V
dB/°C
MTTF versus Temperature
@ ICC =50mA
Case Temperature
Junction Temperature
MTTF
85
°C
122.9
°C
>1,000,000
hours
194
°C/W
Thermal Resistance
θJC
2 of 8
J T – T CASE
--------------------------- = θ JC ( °C ⁄ Watt )
V D ⋅ I CC
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
Rev A6 DS060124
NBB-302
Pin
1
Function
GND
2
3
4
GND
GND
RF IN
5
6
7
8
GND
GND
GND
RF OUT
Description
Interface Schematic
Ground connection. For best performance, keep traces physically short
and connect immediately to ground plane.
Same as pin 1.
Same as pin 1.
RF input pin. This pin is NOT internally DC blocked. A DC blocking capacitor,
suitable for the frequency of operation, should be used in most applications. DC coupling of the input is not allowed, because this will override the
internal feedback loop and cause temperature instability.
Same as pin 1.
Same as pin 1.
Same as pin 1.
RF output and bias pin. Biasing is accomplished with an external series
resistor and choke inductor to VCC. The resistor is selected to set the DC
current into this pin to a desired level. The resistor value is determined by
the following equation:
( V CC – V DEVICE )
R = -----------------------------------------I CC
9
GND
RF OUT
RF IN
Care should also be taken in the resistor selection to ensure that the current into the part never exceeds maximum datasheet operating current
over the planned operating temperature. This means that a resistor
between the supply and this pin is always required, even if a supply near
5.0V is available, to provide DC feedback to prevent thermal runaway.
Alternatively, a constant current supply circuit may be implemented.
Because DC is present on this pin, a DC blocking capacitor, suitable for the
frequency of operation, should be used in most applications. The supply
side of the bias network should also be well bypassed.
Same as pin 1.
Package Drawing
2.94 min
3.28 max
Pin 1
Indicator
1.00 min
1.50 max
N3
Lid ID
1.70 min
1.91 max
2.39 min
2.59 max
0.025 min
0.125 max
0.50 nom
0.50 nom
Pin 1
Indicator
RF OUT
Ground
Ground
RF IN
0.98 min
1.02 max
0.38 nom
All Dimensions in Millimeters
0.37 min
0.63 max
Notes:
1. Solder pads are coplanar to within ±0.025 mm.
2. Lid will be centered relative to frontside metallization with a tolerance of ±0.13 mm.
3. Mark to include two characters and dot to reference pin 1.
Rev A6 DS060124
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
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NBB-302
Typical Bias Configuration
Application notes related to biasing circuit, device footprint, and thermal considerations are available on request.
VCC
RCC
1,2,3
4
In
L choke
(optional)
8
C block
5,6,7,9
Out
C block
VDEVICE
VD = 3.9 V
Recommended Bias Resistor Values
Supply Voltage, VCC (V)
5
8
10
12
15
20
Bias Resistor, RCC (Ω)
22
81
122
162
222
322
Application Notes
Die Attach
The die attach process mechanically attaches the die to the circuit substrate. In addition, it electrically connects the ground to
the trace on which the chip is mounted, and establishes the thermal path by which heat can leave the chip.
Wire Bonding
Electrical connections to the chip are made through wire bonds. Either wedge or ball bonding methods are acceptable practices for wire bonding.
Assembly Procedure
Epoxy or eutectic die attach are both acceptable attachment methods. Top and bottom metallization are gold. Conductive silver-filled epoxies are recommended. This procedure involves the use of epoxy to form a joint between the backside gold of the
chip and the metallized area of the substrate. A 150°C cure for 1 hour is necessary. Recommended epoxy is Ablebond 841LMI from Ablestik.
Bonding Temperature (Wedge or Ball)
It is recommended that the heater block temperature be set to 160°C±10°C.
4 of 8
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
Rev A6 DS060124
NBB-302
Extended Frequency InGaP Amplifier Designer’s Tool Kit
NBB-X-K1
This tool kit was created to assist in the design-in of the RFMD NBB- and NLB-series InGap HBT gain block amplifiers. Each tool
kit contains the following.
•
•
•
•
5 each NBB-300, NBB-310 and NBB-400 Ceramic Micro-X Amplifiers
5 each NLB-300, NLB-310 and NLB-400 Plastic Micro-X Amplifiers
2 Broadband Evaluation Boards and High Frequency SMA Connectors
Broadband Bias Instructions and Specification Summary Index for ease of operation
Rev A6 DS060124
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
5 of 8
NBB-302
Tape and Reel Dimensions
All Dimensions in Millimeters
T
A
B
S
D
O
F
330 mm (13") REEL
ITEMS
Diameter
Micro-X, MPGA
SYMBOL SIZE (mm)
B
330 +0.25/-4.0
FLANGE Thickness
Space Between Flange
HUB
T
F
Outer Diameter
Spindle Hole Diameter
O
S
Key Slit Width
Key Slit Diameter
A
D
SIZE (inches)
13.0 +0.079/-0.158
18.4 MAX
12.4 +2.0
0.724 MAX
0.488 +0.08
102.0 REF
4.0 REF
13.0 +0.5/-0.2 0.512 +0.020/-0.008
1.5 MIN
20.2 MIN
0.059 MIN
0.795 MIN
PIN 1
User Direction of Feed
4.0
All dimensions in mm
See Note 1
2.00 ± 0.05
0.30 ± 0.05
R0.3 MAX.
1.5
See Note 6
+0.1
-0.0
A
1.5 MIN.
1.75
5.50 ± 0.05
See Note 6 12.00
± 0.30
Bo
Ko
Ao
8.0
A
R0.5 TYP
SECTION A-A
NOTES:
1. 10 sprocket hole pitch cumulative tolerance ±0.2.
2. Camber not to exceed 1 mm in 100 mm.
3. Material: PS+C
4. Ao and Bo measured on a plane 0.3 mm above the bottom of the pocket.
5. Ko measured from a plane on the inside bottom of the pocket to the surface of the carrier.
6. Pocket position relative to sprocket hole measured as true position of pocket, not pocket hole.
6 of 8
Ao = 3.6 MM
Bo = 3.6 MM
Ko = 1.7 MM
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
Rev A6 DS060124
NBB-302
Device Voltage versus Amplifier Current
P1dB versus Frequency at +25°C
16.0
4.00
14.0
3.95
P1dB (dBm)
Device Voltage, V D (V)
12.0
3.90
3.85
10.0
8.0
6.0
3.80
4.0
3.75
2.0
3.70
0.0
35.00
40.00
45.00
50.00
55.00
2.0
60.00
4.0
6.0
8.0
POUT/Gain versus PIN at 6 GHz
12.0
14.0
16.0
POUT/Gain versus PIN at 14 GHz
18.0
14.0
16.0
12.0
14.0
10.0
POUT (dBm), Gain (dB)
POUT (dBm), Gain (dB)
10.0
Frequency (GHz)
Amplifier Current, ICC (mA)
12.0
10.0
8.0
6.0
4.0
8.0
6.0
4.0
2.0
0.0
Pout (dBm)
2.0
Pout (dBm)
-2.0
Gain (dB)
Gain (dB)
0.0
-4.0
-12.0
-10.0
-8.0
-6.0
-4.0
-2.0
0.0
2.0
4.0
6.0
PIN (dBm)
-12.0
-10.0
-8.0
-6.0
-4.0
-2.0
0.0
2.0
4.0
6.0
PIN (dBm)
Third Order Intercept versus Frequency at +25°C
30.0
28.0
26.0
24.0
Output IP3 (dBm)
22.0
20.0
18.0
16.0
14.0
12.0
10.0
8.0
6.0
4.0
2.0
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
Frequency (GHz)
Rev A6 DS060124
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
7 of 8
NBB-302
Note: The s-parameter gain results shown below include device performance as well as evaluation board and connector loss
variations. The insertion losses of the evaluation board and connectors are as follows:
1GHz to 4GHz=-0.06dB
5GHz to 9GHz=-0.22dB
10GHz to 14GHz=-0.50dB
15GHz to 20GHz=-1.08dB
S12 versus Frequency at +25°C
0.0
-5.0
-5.0
S12 (dB)
S11 (dB)
S11 versus Frequency at +25°C
0.0
-10.0
-15.0
-10.0
-15.0
-20.0
-20.0
0.0
5.0
10.0
15.0
20.0
0.0
5.0
Frequency (GHz)
15.0
20.0
S22 versus Frequency at +25°C
20.0
0.0
15.0
-5.0
S22 (dB)
S21 (dB)
S21 versus Frequency at +25°C
10.0
5.0
-10.0
-15.0
0.0
-20.0
0.0
5.0
10.0
Frequency (GHz)
8 of 8
10.0
Frequency (GHz)
15.0
20.0
0.0
5.0
10.0
15.0
20.0
Frequency (GHz)
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
Rev A6 DS060124
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