AOSMD AO4468L N-channel enhancement mode field effect transistor Datasheet

AO4468
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AO4468 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in
PWM applications. The source leads are separated
to allow a Kelvin connection to the source, which
may be used to bypass the source inductance.
Standard Product AO4468 is Pb-free (meets ROHS
& Sony 259 specifications). AO4468L is a Green
Product ordering option. AO4468 and AO4468L are
electrically identical.
VDS (V) = 30V
ID = 11.6A
RDS(ON) < 14mΩ
RDS(ON) < 22mΩ
(V GS = 10V)
(VGS = 10V)
(VGS = 4.5V)
D
S
S
S
G
D
D
D
D
G
SOIC-8
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
V
Drain-Source Voltage
30
DS
VGS
±20
Gate-Source Voltage
Continuous Drain
11.6
TA=25°C
Current A
ID
9.2
TA=70°C
Pulsed Drain Current B
IDM
TA=25°C
TA=70°C
Power Dissipation
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
TJ, TSTG
Symbol
Alpha & Omega Semiconductor, Ltd.
A
50
3.1
2
-55 to 150
PD
t ≤ 10s
Steady-State
Steady-State
Units
V
V
RθJA
RθJL
Typ
31
59
16
W
°C
Max
40
75
24
Units
°C/W
°C/W
°C/W
AO4468
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Min
ID=250µA, VGS=0V
Gate-Body leakage current
VDS=0V, VGS= ±20V
Gate Threshold Voltage
VDS=VGS ID=10mA
1.5
ID(ON)
On state drain current
VGS=4.5V, VDS=5V
50
VGS=10V, ID=11.6A
TJ=125°C
Static Drain-Source On-Resistance
VGS=4.5V, ID=10A
gFS
Forward Transconductance
VSD
IS=1A,VGS=0V
Diode Forward Voltage
Maximum Body-Diode Continuous Current
VDS=5V, ID=11.6A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=0V, f=1MHz
Qgs
Gate Source Charge
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
VGS=10V, VDS=15V, ID=11.6A
VGS=10V, VDS=15V, RL=1.30Ω,
RGEN=3Ω
Units
V
µA
±100
nA
2
3
V
11
14
17
21
17.4
22
mΩ
1
V
4.5
A
1200
pF
A
19
0.73
955
VGS=0V, VDS=15V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgd
1
5
VGS(th)
IS
0.003
TJ=55°C
IGSS
RDS(ON)
Max
30
VDS=24V, VGS=0V
Zero Gate Voltage Drain Current
Typ
mΩ
S
145
pF
112
pF
0.5
0.85
Ω
17
24
nC
9
12
nC
3.4
nC
4.7
nC
5
6.5
6
7.5
ns
ns
19
25
ns
4.5
6
ns
trr
Body Diode Reverse Recovery Time
IF=11.6A, dI/dt=100A/µs
19
21
Qrr
Body Diode Reverse Recovery Charge IF=11.6A, dI/dt=100A/µs
9
12
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
curve provides a single pulse rating.
Rev 0 : Apr 2006
2
FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO4468
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
70
35
10V
6V
60
4.5V
50
25
40
ID(A)
ID (A)
VDS=5V
30
VDS=VGS ID=1mA
30
25°C
5
10
0
0
0
1
2
3
1.5
4
2
25
800
140
80
0.5
Normalized On-Resistance
1.8
20
VGS=4.5V
15
10
VGS=10V
5
0
5
10
15
2.5
3
3.5
4
4.5
VGS(Volts)
Figure 2: Transfer Characteristics
VDS (Volts)
Fig 1: On-Region Characteristics
RDS(ON) (mΩ)
125°C1.8
1.4
50
15
10
VGS=3.5V
20
20
20
1.6
15
7
1.4
220
140
VGS=10V
ID=11.6A
VGS=4.5V
ID=10A
1.2
1
0.8
0
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
50
1.0E+01
ID=11.6A
1.0E+00
1.0E-01
IS (A)
RDS(ON) (mΩ)
40
30
125°C
1.0E-02
125°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR25°C
USES AS CRITICAL
1.0E-03
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED.
AOS DOES NOT ASSUME ANY LIABILITY ARISI
OUT OF20
SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
25°C
1.0E-04
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
1.0E-05
10
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
VSD (Volts)
Figure 6: Body-Diode Characteristics
1.0
AO4468
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1500
10
VDS=15V
ID=11.6A
1250
Capacitance (pF)
VGS (Volts)
8
6
VDS=VGS ID=1mA
4
2
Ciss
1000
750
1.4
50
500
1.8
Coss
250
0
0
4
8
12
16
20
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
10μs
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
1ms
10.0
100μs
10ms
0.1s
1.0
1s
TJ(Max)=150°C
TA=25°C
DC
1
10
TJ(Max)=150°C
TA=25°C
15
7
30
20
0.01
0.1
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=40°C/W
220
140
0
0.0001 0.001
100
VDS (Volts)
10
30
10
10s
0.1
0.1
10
800
140
80
0.5
40
Power (W)
RDS(ON)
limited
ID (Amps)
5
50
100.0
ZθJA Normalized Transient
Thermal Resistance
Crss
0
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
PD
COMPONENTS
NOT ASSUME ANY LIABILITY ARISI
0.1 IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
Ton
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Single Pulse
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
100
1000
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