AO4468 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4468 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance. Standard Product AO4468 is Pb-free (meets ROHS & Sony 259 specifications). AO4468L is a Green Product ordering option. AO4468 and AO4468L are electrically identical. VDS (V) = 30V ID = 11.6A RDS(ON) < 14mΩ RDS(ON) < 22mΩ (V GS = 10V) (VGS = 10V) (VGS = 4.5V) D S S S G D D D D G SOIC-8 S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Maximum V Drain-Source Voltage 30 DS VGS ±20 Gate-Source Voltage Continuous Drain 11.6 TA=25°C Current A ID 9.2 TA=70°C Pulsed Drain Current B IDM TA=25°C TA=70°C Power Dissipation Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C TJ, TSTG Symbol Alpha & Omega Semiconductor, Ltd. A 50 3.1 2 -55 to 150 PD t ≤ 10s Steady-State Steady-State Units V V RθJA RθJL Typ 31 59 16 W °C Max 40 75 24 Units °C/W °C/W °C/W AO4468 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Min ID=250µA, VGS=0V Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage VDS=VGS ID=10mA 1.5 ID(ON) On state drain current VGS=4.5V, VDS=5V 50 VGS=10V, ID=11.6A TJ=125°C Static Drain-Source On-Resistance VGS=4.5V, ID=10A gFS Forward Transconductance VSD IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current VDS=5V, ID=11.6A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=0V, f=1MHz Qgs Gate Source Charge Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time VGS=10V, VDS=15V, ID=11.6A VGS=10V, VDS=15V, RL=1.30Ω, RGEN=3Ω Units V µA ±100 nA 2 3 V 11 14 17 21 17.4 22 mΩ 1 V 4.5 A 1200 pF A 19 0.73 955 VGS=0V, VDS=15V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgd 1 5 VGS(th) IS 0.003 TJ=55°C IGSS RDS(ON) Max 30 VDS=24V, VGS=0V Zero Gate Voltage Drain Current Typ mΩ S 145 pF 112 pF 0.5 0.85 Ω 17 24 nC 9 12 nC 3.4 nC 4.7 nC 5 6.5 6 7.5 ns ns 19 25 ns 4.5 6 ns trr Body Diode Reverse Recovery Time IF=11.6A, dI/dt=100A/µs 19 21 Qrr Body Diode Reverse Recovery Charge IF=11.6A, dI/dt=100A/µs 9 12 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in curve provides a single pulse rating. Rev 0 : Apr 2006 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO4468 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 70 35 10V 6V 60 4.5V 50 25 40 ID(A) ID (A) VDS=5V 30 VDS=VGS ID=1mA 30 25°C 5 10 0 0 0 1 2 3 1.5 4 2 25 800 140 80 0.5 Normalized On-Resistance 1.8 20 VGS=4.5V 15 10 VGS=10V 5 0 5 10 15 2.5 3 3.5 4 4.5 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics RDS(ON) (mΩ) 125°C1.8 1.4 50 15 10 VGS=3.5V 20 20 20 1.6 15 7 1.4 220 140 VGS=10V ID=11.6A VGS=4.5V ID=10A 1.2 1 0.8 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 50 1.0E+01 ID=11.6A 1.0E+00 1.0E-01 IS (A) RDS(ON) (mΩ) 40 30 125°C 1.0E-02 125°C THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR25°C USES AS CRITICAL 1.0E-03 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISI OUT OF20 SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, 25°C 1.0E-04 FUNCTIONS AND RELIABILITY WITHOUT NOTICE 1.0E-05 10 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 AO4468 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1500 10 VDS=15V ID=11.6A 1250 Capacitance (pF) VGS (Volts) 8 6 VDS=VGS ID=1mA 4 2 Ciss 1000 750 1.4 50 500 1.8 Coss 250 0 0 4 8 12 16 20 0 Qg (nC) Figure 7: Gate-Charge Characteristics 10μs 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 1ms 10.0 100μs 10ms 0.1s 1.0 1s TJ(Max)=150°C TA=25°C DC 1 10 TJ(Max)=150°C TA=25°C 15 7 30 20 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=40°C/W 220 140 0 0.0001 0.001 100 VDS (Volts) 10 30 10 10s 0.1 0.1 10 800 140 80 0.5 40 Power (W) RDS(ON) limited ID (Amps) 5 50 100.0 ZθJA Normalized Transient Thermal Resistance Crss 0 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL PD COMPONENTS NOT ASSUME ANY LIABILITY ARISI 0.1 IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, Ton FUNCTIONS AND RELIABILITY WITHOUT NOTICE Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000