Switching Diodes MA6X121 Silicon epitaxial planar type Unit : mm + 0.25 0.65 ± 0.15 1.5 − 0.05 + 0.2 2.9 − 0.05 1.9 ± 0.2 0.95 0.95 0.3 − 0.05 1 + 0.1 6 + 0.1 0.65 ± 0.15 5 2 4 3 1.45 ± 0.1 2.8 • Three-element contained in one package, allowing high-density mounting • Short reverse recovery time trr • Small terminal capacitance, Ct 0.5 − 0.05 ■ Features + 0.2 − 0.3 VR 80 V Peak reverse voltage VRM 80 V Forward current (DC)*1 IF 100 mA Peak forward current*1 IFM 225 mA Non-repetitive peak forward surge current*1,2 IFSM 500 mA Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C + 0.1 Reverse voltage (DC) 0.16 − 0.06 Unit 0.1 to 0.3 0.4 ± 0.2 0 to 0.1 Rating 0.8 Symbol + 0.2 Parameter 1.1 − 0.1 ■ Absolute Maximum Ratings Ta = 25°C 1 : Cathode 1 2 : Cathode 2 3 : Cathode 3 4 : Anode 3 5 : Anode 2 6 : Anode 1 Mini Type Package (6-pin) Marking Symbol: M2D Note) *1 : Value for single diode *2 : t = 1 s Internal Connection 6 1 5 2 4 3 ■ Electrical Characteristics Ta = 25°C Parameter Symbol Conditions Min Typ Max Unit Reverse current (DC) IR VR = 75 V 100 nA Forward voltage (DC) VF IF = 100 mA 1.2 V Reverse voltage (DC) VR IR = 100 µA Terminal capacitance Ct VR = 0 V, f = 1 MHz 2 pF Reverse recovery time* trr IF = 10 mA, VR = 6 V Irr = 0.1 · IR, RL = 100 Ω 3 ns 80 V Note) 1. Rated input/output frequency: 100 MHz 2. * : trr measuring circuit Bias Application Unit N-50BU Input Pulse tp tr 10% A VR Pulse Generator (PG-10N) Rs = 50 Ω W.F.Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.35 ns δ = 0.05 Output Pulse t IF trr t Irr = 0.1 · IR IF = 10 mA VR = 6 V RL = 100 Ω 1 MA6X121 Switching Diodes IF VF IR V R 1 000 100 100 10 VF Ta 1.6 1.4 Ta = 150°C 100°C 10 25°C − 20°C 1 0.1 Forward voltage VF (V) Reverse current IR (µA) Forward current IF (mA) Ta = 150°C 100°C 1 0.1 25°C 1.2 1.0 IF = 100 mA 0.8 10 mA 0.6 3 mA 0.4 0.01 0.2 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 0.001 0 Forward voltage VF (V) 20 60 80 IR Ta VR = 75 V 1 0.1 0.01 40 80 120 160 2 200 1.2 1.0 0.8 0.6 0.4 0 0 20 40 60 80 120 160 200 IF(surge) tW 0.2 Ambient temperature Ta (°C) 40 1 000 Forward surge current IF(surge) (A) Terminal capacitance Ct (pF) 35 V 0 0 Ambient temperature Ta (°C) f = 1 MHz Ta = 25°C 1.4 1V 0.001 −40 0 −40 120 Ct VR 1.6 10 100 Reverse voltage VR (V) 100 Reverse current IR (µA) 40 80 100 Reverse voltage VR (V) 120 Ta = 25°C IF(surge) 300 tW Non repetitive 100 30 10 3 1 0.3 0.1 0.03 0.1 0.3 1 3 Pulse width tW (ms) 10 30