DEC GP104 1 amp high reliability silicon diode Datasheet

DIOTEC ELECTRONICS CORP.
Data Sheet No. GPDG-101-1B
18020 Hobart Blvd., Unit B
Gardena, CA 90248 U.S.A
Tel.: (310) 767-1052 Fax: (310) 767-7958
1 AMP HIGH RELIABILITY SILICON DIODES
MECHANICAL SPECIFICATION
FEATURES
SERIES GP100 - GP110
ACTUAL SIZE OF
DO-41 PACKAGE
R
PROPRIETARY SOFT GLASS JUNCTION
PASSIVATION FOR SUPERIOR RELIABILITY AND
PERFORMANCE
DO - 41
VOID FREE VACUUM DIE SOLDERING FOR MAXIMUM
MECHANICAL STRENGTH AND HEAT DISSIPATION
(Solder Voids: Typical < 2%, Max. < 10% of Die Area)
LL
BD (Dia)
EXTREMELY LOW LEAKAGE AT HIGH TEMPERATURES
LOW FORWARD VOLTAGE DROP
BL
Color Band
Denotes
Cathode
1A at TA = 75 C WITH NO THERMAL RUNAWAY
MECHANICAL DATA
LL
Case: JEDEC DO-41, molded epoxy
(U/L Flammability Rating 94V-0)
Terminals: Plated axial leads
LD (Dia)
Soldering: Per MIL-STD 202 Method 208 guaranteed
ANT
Polarity: Color band denotes cathode
S
RoH
Mounting Position: Any
LI
MP
O
C
Minimum
In
mm
Sym
0.160
BL
Weight: 0.012 Ounces (0.34 Grams)
4.1
Maximum
In
mm
5.2
0.205
BD
0.103
2.6
0.107
2.7
LL
LD
1.00
0.028
25.4
0.71
0.034
0.86
MAXIMUM RATINGS & ELECTRICAL CHARACTERISTICS
!
"# $ % & ' % ( ) *,+ % ' !! ' $ - ! ' $ % ! .$ ) /0
PARAMETER (TEST CONDITIONS)
RATINGS
SYMBOL
×Ä0Å#Æ:Æ
Series Number
V MKN
Maximum DC Blocking Voltage
Maximum RMS Voltage
V G$HI
Maximum Peak Recurrent Reverse Voltage
V JKJ$L
1
2
Average Forward Rectified Current @ T = 75 C,
Lead length = 0.375 in. (9.5 mm)
Peak Forward Surge Current ( 8.3 mSec single half sine wave
superimposed on rated load)
ÇÉÈ0ÊË$ÊÍÌÉÎ0ÏÐ&ÑÓÒÉÔ0ÕÖ:×ÙؗÚÛÜ&Ýßޗàáâ:ãåä—æç#çè
é:ê
ïð:ð
V&W:W
X&Y:Y
õ:ö&ö
b:c:c
üý:ý:ý
ë:ì
ñ:ò
Z[&\
]:^:_
÷&ø&ù
d:e:f
þ:ÿ&ÿ
í:î
óô:ô
`&a:a
i&j:j
ú:û&û
g:h:h
l:m
n
V P#Q
Maximum Forward Voltage at 1 Amp DC
Á
Â
Maximum Full Cycle Reverse Current @ T = 75 C (Note 1)
Maximum Average DC Reverse Current
At Rated DC Blocking Voltage
½
Typical Thermal Resistance, Junction to Ambient (Note 1)
Typical Junction Capacitance (Note 2)
Operating and Storage Temperature Range
· ¸0¹&ºE»$¼ Ž ! ’‘“,”!•—– “˜™#š ›œŸž ¡!¢,£Ÿ¤ ˜#!Ž ¥ £Ÿ¦’¦
Ž §’¨“,”!©ªE« “,•’” š ,¨­¬ ®0¯°”±E±#– ¤ “,•’« “!²,“« ©,“­²³E– š ”!™E“´³µE¶­²³:– š ©
¾
@ T = 25 C
¿
À
@ T = 125 C
I 5$67 8:9;
I 3$4
R< =!>
CU
?,@BA&CED
T T
VOLTS
k
IF
I RST
UNITS
AMPS
VOLTS
o
p qr
s:tu t
v:w
xy
z {:|~} €K‚ƒ&|
O
A
°C/W
pF
°C
„ † ‡ ˆ‰ Š ‹ ‰ Œ  Œ
H5
DIOTEC ELECTRONICS CORP.
Data Sheet No. GPDG-101-2B
18020 Hobart Blvd., Unit B
Gardena, CA 90248 U.S.A
Tel.: (310) 767-1052 Fax: (310) 767-7958
1 AMP HIGH RELIABILITY SILICON DIODES
RATING & CHARACTERISTIC CURVES FOR SERIES GP100 - GP110
1.0
Peak Forward Surge Current
(Amperes)
Average Forward Current, Io
(Amperes)
1.2
0.8
0.6
0.4
0.2
0
0
50
100
150
jQkOlmkQnporq s t:u:v
wx yIzI{}|~ € {O‚ ƒ:qr„ ~ †q
180
Ambient Temperature, C
FIGURE 1. FORWARD CURRENT DERATING CURVE
Number of Cycles at 60 Hz
FIGURE 2. MAXIMUM NON-REPETITIVE SURGE CURRENT
10
Instantaneous Reverse Current, I
(Microamperes)
Instantaneous Forward Current
(Amperes)
‡ ˆ
1.0
0.1
‰G
£ ŠI‹ ŒL¤ 
Ž: ‘’”“}• – — ˜`ŠI™ š?šœ
¥ ›
 ž Ÿ — ¡I¡¢  ’
»½
à ¼¿¾ À ÀÂÄ Á
1.0
.1
0.1
.01
0.01
0.6
0.7
08
0.9
1.0
1.1
1.2
´G
· º¸
¹ µI¶ L
® ¯
0
1.3
°?±
40
² ³
¦ §?§
¨ © ª
« ¬­
Percent of Rated Peak Reverse Voltage
Instantaneous Forward Voltage (Volts)
FIGURE 4. TYPICAL REVERSE CHARACTERISTICS
FIGURE 3. TYPICAL FORWARD CHARACTERISTIC PER DIODE
C D?D D
Capacitance, pF
TJ = 25 oC
# $
-. /
&' (
%
+ ,
) * *
Reverse Voltage, (Volts)
FIGURE 5. TYPICAL JUNCTION CAPACITANCE PER DIODE
H6
Peak Forward Surge Current
(Amperes)
0 1 1
2 3 3
EG
g FIH JLh K
MONQPQR S TUT?V W V W XTZY\[]^S T`_]Qa bT
cQW d c VFH e?ef
i Y
A B
78 7:9
45 6
=?> @
; <
Pulse Duration (Milliseconds)
FIGURE 6. PEAK FORWARD SURGE CURRENT
! " !