AAT AAT8661F One-cell li-ion battery protection ic Datasheet

Advanced Analog Technology, Inc.
AAT8661 Series
Product information presented is current as of publication date. Details are subject to change without notice.
ONE-CELL LI-ION BATTERY PROTECTION IC
FEATURES
GENERAL DESCRIPTION
z
Ideal for One-Cell Rechargeable Li-Ion
Battery Packs
z
High Accuracy Voltage Detection
z
Low Current Consumption:
The AAT8661 series are designed to protect
one-cell rechargeable Li-Ion battery pack against
over-charge, over-discharge, over-current and
short circuit. They use CMOS process to provide
high accuracy voltage detection and low current
consumption.
Each of the AAT8661 devices incorporates
voltage comparators, bandgap reference voltage
generator, signal delay circuit, short circuit
detector, and digital control circuit.
In the charge process, when the battery voltage is
charged to a value greater than VC1 (Over-Charge
Threshold Voltage), the output of C out pin
3μA Supply Current (Typical)
0.1μA Shutdown Current
z
3-Level Over Current Detection:
Over-Current Level 1 /Over Current Level 2
/ Short Circuit
z
Wide Operating
− 40 ο C to 85 ο C
z
Small SOT26 Package
Temperature
Range:
switches to the low level, i.e., the VN pin level.
The output of C out pin will switch to high level
PIN CONFIGURATION
D out
GND
VN
V DD
C out
NULL
when the battery voltage falls lower than VC2
(Over-Charge Release Voltage), or when the
charger is disconnected from the battery pack and
the battery voltage level ranges between VC1 and
VC2.
During the discharge process, when the battery
voltage drops to a value lower than VD1
(Over-Discharge Threshold Voltage), the output
of D out pin switches to low level immediately
after the internal delay time elapses. The output
of D out pin will switch to high level when the
battery voltage is at a level higher than VD 2
(Over-Discharge Release Voltage).
Over current level 1 voltage ( VOC1 ) is used to
–
– 台灣類比科技股份有限公司 –
Advanced Analog Technology, Inc. –
Page 1 of 25
V2.0
Advanced Analog Technology, Inc.
AAT8661 Series
monitor the amount of discharge current. If the
discharge current is high enough to cause VN pin
voltage increase to a value greater than VOC1 , the
output of D out pin will switch to a low level
after a delay time t OC1 . If the load is removed
from battery pack, the output of D out will
circuit current is high enough to cause VN pin
voltage increase to greater than Vshort , the output
of D out pin will move to the low level after a
delay time t short , and the output of D out level
will change to high when the load is removed
from battery pack.
change to a high level again.
The mechanism of short circuit protection is
identical to a discharge current. If the short
BLOCK DIAGRAM:
VDD
D out
C out
GND
VN
–
– 台灣類比科技股份有限公司 –
Advanced Analog Technology, Inc. –
Page 2 of 25
V2.0
Advanced Analog Technology, Inc.
AAT8661 Series
PIN DESCRIPTION
PIN NAME I/O
NO.
1
D out
2
3
VN
C out
NULL
VDD
GND
4
5
6
DESCRIPTION
O Discharge Control Pin which Connects to External MOSFET Gate
I Voltage Detection Pin between VN and GND
O Charge Control Pin which Connects to External MOSFET Gate.
╳ Null Pad.
I Power Supply Input Pin
I Ground
ABSOLUTE MAXIMUM RATINGS
CHARACTERISTICS
SYMBOL
VALUE
UNIT
Supply Voltage
VDD
−0.3 to 8
V
VN Pin Input Voltage
VVN
VDD − 20 to VDD + 0.3
V
D out Pin Output Voltage
VDout
−0.3 to VDD + 0.3
V
C out Pin Output Voltage
VCout
VVN − 0.3 to VDD + 0.3
Power Dissipation
Pd
150
V
mW
Operating Temperature Range
TC
−40 to +85
Tstorage
−40 to +125
Storage Temperature Range
ο
C
ο
C
RECOMMENDED OPERATING CONDITIONS
TEST CONDITION
MIN
MAX
UNIT
Voltage Defined as VDD
to GND
1.5
7.0
V
D out Output Voltage
GND
VDD
V
C out Output Voltage
VN
VDD
V
Supply Voltage, VDD
OPERATION VOLTAGE AND OPERATION CURRENT
PARAMETER
Supply Current at Normal Operation
Mode
Standby Current at Power Down Mode
TEST CONDITION
-
Operation Voltage between VDD and
VN
–
MIN
VDD =3.3V; VN=0V; GND=0V
TYP
MAX
UNIT
3.0
5.0
μA
-
0.1
μA
20.0
V
1.5
– 台灣類比科技股份有限公司 –
Advanced Analog Technology, Inc. –
Page 3 of 25
V2.0
Advanced Analog Technology, Inc.
AAT8661 Series
AAT8661A DETECTION VOLTAGE AND DELAY TIME ( 25 ο C )
PARAMETER
SYMBOL
TEST CONDITION
Over Charge Threshold Voltage
VC1
Over Charge Release Voltage
VC 2
Over Discharge Threshold
Voltage
VD1
Over Discharge Release Voltage
VD 2
Over Charge Delay Time
t C1
Detect Rising Edge of Supply
Voltage
Detect Falling Edge of Supply
Voltage
Detect Falling Edge of Supply
Voltage
Detect Rising Edge of Supply
Voltage
VDD = 3.6V to 4.5V
Over Discharge Delay Time
t D1
VDD = 3.6V to 2.4V
MIN
TYP
MAX
UNIT
4.300
4.325
4.350
V
VC1-0.3
VC1-0.25
VC1-0.2
V
2.420
2.500
2.580
V
VD1+0.3
VD1+0.4
VD1+0.5
V
0.700
1.000
1.300
s
125.0
162.5
ms
150
170
mV
500
600
mV
VDD −1.3
VDD − 0.9
V
ms
87.5
Detect Rising Edge of “VN” Pin
Voltage ( D out Response with tOC1
130
Delay Time)
Detect Rising Edge of “VN”
Pin Voltage ( D out Response
400
with tOC2 Delay Time)
VDD = 3.0V , Detect Rising Edge
of “VN” Pin Voltage ( D out
VDD −1.7
Response with t short Delay
Time)
Over Current Level 1 Detection
Voltage
VOC1
Over Current Level 2 Detection
Voltage
VOC 2
Short Circuit Detection Voltage
Vshort
Over Current Level 1 Detection
Delay Time
t OC1
VDD = 3.0V
5.6
8.0
10.4
Over Current Level 2 Detection
Delay Time
t OC 2
Room Temp. ⇒
Low or High Temp. ⇒
VDD = 3.0V
1.4
1.1
2.0
2.0
2.6
3.4
Short Circuit Detection Delay
Time
t short
VDD = 3.0V
10
50
μs
Charger Detection Voltage
VCHR
−2.0
−1.3
−0.6
V
C out High Level Resistance
R COH
1
2
10
kΩ
C out Low Level Resistance
R COL
150
602
2,380
kΩ
D out High Level Resistance
R DOH
2.5
5.0
10.0
kΩ
D out Low Level Resistance
R DOL
2.5
5.0
10.0
kΩ
Internal Resistance between VN
and VDD
R VND
VDD = 1.8V ; VN = 0V
100
300
900
kΩ
Internal Resistance between VN
and GND
R VNG
VDD = 3.5V ; VN = 3.5V
10
20
40
kΩ
–
Detect Rising Edge of “ D out ”
Pin Voltage (when VD1＜VDD＜
VD2)
VDD = 3.5V ; C out = 3.0V ;
VN = 0V
VDD = 4.5V ;
C out = 0.5V ; VN = 0V
VDD = 3.5V ; D out = 3.0V ;
VN = 0V
VDD = 1.8V ;
D out = 0.5V ; VN = 1.8V
ms
ms
– 台灣類比科技股份有限公司 –
Advanced Analog Technology, Inc. –
Page 4 of 25
V2.0
Advanced Analog Technology, Inc.
AAT8661 Series
AAT8661B DETECTION VOLTAGE and DELAY TIME (25℃)
PARAMETER
SYMBOL
TEST CONDITION
Over Charge Threshold Voltage
VC1
Over Charge Release Voltage
VC 2
Over Discharge Threshold
Voltage
VD1
Over Discharge Release Voltage
VD 2
Over Charge Delay Time
t C1
Detect Rising Edge of Supply
Voltage
Detect Falling Edge of Supply
Voltage
Detect Falling Edge of Supply
Voltage
Detect Rising Edge of Supply
Voltage
VDD = 3.6V to 4.5V
Over Discharge Delay Time
t D1
VDD = 3.6V to 2.2V
Detect Rising Edge of “VN” Pin
Voltage ( D out Response with tOC1
Delay Time)
Detect Rising Edge of “VN”
Pin Voltage ( D out Response
with tOC2 Delay Time)
VDD = 3.0V , Detect Rising Edge
of “VN” Pin Voltage ( D out
Response with t short Delay
Time)
MIN
TYP
MAX
UNIT
4.325
4.350
4.375
V
VC1-0.25
VC1-0.2
VC1-0.15
V
2.220
2.300
2.380
V
VD1+0.6
VD1+0.7
VD1+0.8
V
0.088
0.125
0.163
s
22.4
32
41.6
ms
130
150
170
mV
400
500
600
mV
VDD −1.7
VDD −1.3
VDD − 0.9
V
Over Current Level 1 Detection
Voltage
VOC1
Over Current Level 2 Detection
Voltage
VOC 2
Short Circuit Detection Voltage
Vshort
Over Current Level 1 Detection
Delay Time
t OC1
VDD = 3.0V
2.8
4.0
5.2
ms
Over Current Level 2 Detection
Delay Time
t OC 2
Room Temp. ⇒
Low or High Temp. ⇒
VDD = 3.0V
1.4
1.1
2.0
2.0
2.6
3.4
ms
ms
Short Circuit Detection Delay
Time
t short
VDD = 3.0V
10
50
μs
Charger Detection Voltage
VCHR
−2.0
−1.3
−0.6
V
C out High Level Resistance
R COH
1
2
10
kΩ
C out Low Level Resistance
R COL
150
602
2,380
kΩ
D out High Level Resistance
R DOH
2.5
5.0
10.0
kΩ
D out Low Level Resistance
R DOL
2.5
5.0
10.0
kΩ
Internal Resistance between VN
and VDD
R VND
VDD = 1.8V ; VN = 0V
100
300
900
kΩ
Internal Resistance between VN
and GND
R VNG
VDD = 3.5V ; VN = 3.5V
10
20
40
kΩ
–
Detect Rising Edge of “ D out ”
Pin Voltage
(when VD1＜VDD＜VD2)
VDD = 3.5V ; C OUT = 3.0V ;
VN = 0V
VDD = 4.5V ;
C OUT = 0.5V ; VN = 0V
VDD = 3.5V ; D out = 3.0V ;
VN = 0V
VDD = 1.8V ;
D out = 0.5V ; VN = 1.8V
– 台灣類比科技股份有限公司 –
Advanced Analog Technology, Inc. –
Page 5 of 25
V2.0
Advanced Analog Technology, Inc.
AAT8661 Series
AAT8661C DETECTION VOLTAGE AND DELAY TIME (25℃)
PARAMETER
SYMBOL
TEST CONDITION
Over Charge Threshold Voltage
VC1
Over Charge Release Voltage
VC 2
Over Discharge Threshold
Voltage
VD1
Over Discharge Release Voltage
VD 2
Over Charge Delay Time
t C1
Detect Rising Edge of Supply
Voltage
Detect Falling Edge of Supply
Voltage
Detect Falling Edge of Supply
Voltage
Detect Rising Edge of Supply
Voltage
VDD = 3.6V to 4.5V
Over Discharge Delay Time
t D1
VDD = 3.6V to 2.2V
MIN
TYP
MAX
UNIT
4.275
4.300
4.325
V
VC1-0.15
V
VC1-0.25 VC1-0.2
2.220
2.300
2.380
V
VD1-0.08
VD1
VD1+0.08
V
0.700
1.000
1.300
s
87.5
125.0
162.5
ms
100
120
mV
480
600
mV
VDD − 1.3
VDD − 0.9
V
10.4
ms
2.0
2.0
2.6
3.4
ms
ms
10
50
μs
−2.0
−1.3
−0.6
V
1
2
10
kΩ
150
602
2,380
kΩ
2.5
5.0
10.0
kΩ
2.5
5.0
10.0
kΩ
Detect Rising Edge of “VN” Pin
Voltage ( D out Response with tOC1
80
Delay Time)
Detect Rising Edge of “VN”
Pin Voltage ( D out Response
400
with tOC2 Delay Time)
VDD = 3.0V , Detect Rising Edge
of “VN” Pin Voltage ( D out
VDD −1.7
Response with t short Delay
Time)
Over Current Level 1 Detection
Voltage
VOC1
Over Current Level 2 Detection
Voltage
VOC 2
Short Circuit Detection Voltage
Vshort
Over Current Level 1 Detection
Delay Time
t OC1
VDD = 3.0V
5.6
Over Current Level 2 Detection
Delay Time
t OC 2
Room Temp. ⇒
Low or High Temp. ⇒
VDD = 3.0V
1.4
1.1
Short Circuit Detection Delay
Time
t short
VDD = 3.0V
Charger Detection Voltage
VCHR
C out High Level Resistance
R COH
C out Low Level Resistance
R COL
D out High Level Resistance
R DOH
D out Low Level Resistance
R DOL
Internal Resistance between VN
and VDD
R VND
VDD = 1.8V ; VN = 0V
100
300
900
kΩ
Internal Resistance between VN
and GND
R VNG
VDD = 3.5V ; VN = 3.5V
10
20
40
kΩ
–
Detect Rising Edge of “ D out ”
Pin Voltage
(when VD1＜VDD＜VD2)
VDD = 3.5V ;
C out = 3.0V ; VN = 0V
VDD = 4.5V ;
C out = 0.5V ; VN = 0V
VDD = 3.5V ;
D out = 3.0V ; VN = 0V
VDD = 1.8V ;
D out = 0.5V ; VN = 1.8V
8.0
– 台灣類比科技股份有限公司 –
Advanced Analog Technology, Inc. –
Page 6 of 25
V2.0
Advanced Analog Technology, Inc.
AAT8661 Series
AAT8661D DETECTION VOLTAGE AND DELAY TIME (25℃)
PARAMETER
SYMBOL
TEST CONDITION
Over Charge Threshold Voltage
VC1
Over Charge Release Voltage
VC 2
Over Discharge Threshold
Voltage
VD1
Over Discharge Release Voltage
VD 2
Over Charge Delay Time
t C1
Detect Rising Edge
Voltage
Detect Falling Edge
Voltage
Detect Falling Edge
Voltage
Detect Rising Edge
Voltage
VDD = 3.6V to 4.5V
Over Discharge Delay Time
t D1
VDD = 3.6V to 2.2V
of Supply
of Supply
of Supply
of Supply
Detect Rising Edge of “VN” Pin
Voltage ( D out Response with tOC1
Delay Time)
Detect Rising Edge of “VN”
Pin Voltage ( D out Response
with tOC2 Delay Time)
VDD = 3.0V , Detect Rising Edge
of “VN” Pin Voltage ( D out
Response with t short Delay
Time)
MIN
TYP
MAX
UNIT
4.255
4.280
4.305
V
VC1-0.25
VC1-0.2
VC1-0.15
V
2.201
2.281
2.361
V
VD1-0.08
VD1
VD1+0.08
V
0.700
1.000
1.300
s
87.5
125.0
162.5
ms
110
130
150
mV
400
490
600
mV
VDD −1.7
VDD −1.3
VDD − 0.9
V
Over Current Level 1 Detection
Voltage
VOC1
Over Current Level 2 Detection
Voltage
VOC 2
Short Circuit Detection Voltage
Vshort
Over Current Level 1 Detection
Delay Time
t OC1
VDD = 3.0V
5.6
8.0
10.4
ms
Over Current Level 2 Detection
Delay Time
t OC 2
Room Temp. ⇒
Low or High Temp. ⇒
VDD = 3.0V
1.4
1.1
2.0
2.0
2.6
3.4
ms
ms
Short Circuit Detection Delay
Time
t short
VDD = 3.0V
10
50
μs
Charger Detection Voltage
VCHR
−2.0
−1.3
−0.6
V
C out High Level Resistance
R COH
1
2
10
kΩ
C out Low Level Resistance
R COL
VDD = 4.5V ;
C out = 0.5V ; VN = 0V
150
602
2,380
kΩ
D out High Level Resistance
R DOH
VDD = 3.5V ;
D out = 3.0V ; VN = 0V
2.5
5.0
10.0
kΩ
D out Low Level Resistance
R DOL
VDD = 1.8V ; D out = 0.5V ;
VN = 1.8V
2.5
5.0
10.0
kΩ
Internal Resistance between VN
and VDD
R VND
VDD = 1.8V ; VN=0V
100
300
900
kΩ
Internal Resistance between VN
and GND
R VNG
VDD = 3.5V ; VN = 3.5V
10
20
40
kΩ
–
Detect Rising Edge of “ D out ”
Pin Voltage
(when VD1＜VDD＜VD2)
VDD = 3.5V ;
C out = 3.0V ; VN = 0V
– 台灣類比科技股份有限公司 –
Advanced Analog Technology, Inc. –
Page 7 of 25
V2.0
Advanced Analog Technology, Inc.
AAT8661 Series
AAT8661E DETECTION VOLTAGE AND DELAY TIME (25℃)
PARAMETER
SYMBOL
TEST CONDITION
Over Charge Threshold Voltage
VC1
Over Charge Release Voltage
VC 2
Over Discharge Threshold
Voltage
VD1
Over Discharge Release Voltage
VD 2
Over Charge Delay Time
t C1
Detect Rising Edge
Voltage
Detect Falling Edge
Voltage
Detect Falling Edge
Voltage
Detect Rising Edge
Voltage
VDD = 3.6V to 4.5V
Over Discharge Delay Time
t D1
VDD = 3.6V to 2.2V
of Supply
of Supply
of Supply
of Supply
Detect Rising Edge of “VN” Pin
Voltage ( D out Response with tOC1
Delay Time)
Detect Rising Edge of “VN”
Pin Voltage ( D out Response
with tOC2 Delay Time)
VDD = 3.0V , Detect Rising Edge
of “VN” Pin Voltage ( D out
Response with t short Delay
Time)
MIN
TYP
MAX
UNIT
4.255
4.280
4.305
V
VC1-0.25
VC1-0.2
VC1-0.15
V
2.201
2.281
2.361
V
VD1+0.5
VD1+0.6
VD1+0.7
V
0.700
1.000
1.300
s
87.5
125.0
162.5
ms
80
100
120
mV
400
480
600
mV
VDD −1.7
VDD −1.3
VDD − 0.9
V
Over Current Level 1 Detection
Voltage
VOC1
Over Current Level 2 Detection
Voltage
VOC 2
Short Circuit Detection Voltage
Vshort
Over Current Level 1 Detection
Delay Time
t OC1
VDD = 3.0V
5.6
8.0
10.4
ms
Over Current Level 2 Detection
Delay Time
t OC 2
Room Temp. ⇒
Low or High Temp. ⇒
VDD = 3.0V
1.4
1.1
2.0
2.0
2.6
3.4
ms
ms
Short Circuit Detection Delay
Time
t short
10
50
μs
Charger Detection Voltage
VCHR
−2.0
−1.3
−0.6
V
C out High Level Resistance
R COH
1
2
10
kΩ
C out Low Level Resistance
R COL
150
602
2,380
kΩ
D out High Level Resistance
R DOH
2.5
5.0
10.0
kΩ
D out Low Level Resistance
R DOL
2.5
5.0
10.0
kΩ
Internal Resistance between VN
and VDD
R VND
VDD = 1.8V ; VN = 0V
100
300
900
kΩ
Internal Resistance between VN
and GND
R VNG
VDD = 3.5V ; VN = 3.5V
10
20
40
kΩ
–
VDD = 3.0V
Detect Rising Edge of “ D out ”
Pin Voltage
(when VD1＜VDD＜VD2)
VDD = 3.5V ;
C out = 3.0V ; VN = 0V
VDD = 4.5V ;
C out = 0.5V ; VN = 0V
VDD = 3.5V ; D out = 3.0V ;
VN = 0V
VDD = 1.8V ; D out = 0.5V ;
VN = 1.8V
– 台灣類比科技股份有限公司 –
Advanced Analog Technology, Inc. –
Page 8 of 25
V2.0
Advanced Analog Technology, Inc.
AAT8661 Series
AAT8661F DETECTION VOLTAGE AND DELAY TIME (25℃)
PARAMETER
SYMBOL
TEST CONDITION
Over Charge Threshold Voltage
VC1
Over Charge Release Voltage
VC 2
Over Discharge Threshold
Voltage
VD1
Over Discharge Release Voltage
VD 2
Over Charge Delay Time
t C1
Detect Rising Edge of Supply
Voltage
Detect Falling Edge of Supply
Voltage
Detect Falling Edge of Supply
Voltage
Detect Rising Edge of Supply
Voltage
VDD = 3.6V to 4.5V
Over Discharge Delay Time
t D1
VDD = 3.6V to 2.4V
Detect Rising Edge of “VN” Pin
Voltage ( D out Response with tOC1
Delay Time)
Detect Rising Edge of “VN”
Pin Voltage ( D out Response
with tOC2 Delay Time)
VDD = 3.0V , Detect Rising Edge
of “VN” Pin Voltage ( D out
Response with t short Delay
Time)
MIN
TYP
MAX
UNIT
4.300
4.325
4.350
V
VC1-0.3
2.420
VD1+0.3
VC1-0.25 VC1-0.2
2.500
2.580
VD1+0.4 VD1+0.5
V
V
V
0.700
1.000
1.300
s
87.5
125.0
162.5
ms
80
100
120
mV
400
480
600
mV
VDD −1.7
VDD −1.3
VDD − 0.9
V
10.4
ms
2.0
2.0
2.6
3.4
ms
ms
10
50
μs
−2.0
−1.3
−0.6
V
1
2
10
kΩ
150
602
2,380
kΩ
2.5
5.0
10.0
kΩ
Over Current Level 1 Detection
Voltage
VOC1
Over Current Level 2 Detection
Voltage
VOC 2
Short Circuit Detection Voltage
Vshort
Over Current Level 1 Detection
Delay Time
t OC1
VDD = 3.0V
5.6
Over Current Level 2 Detection
Delay Time
t OC 2
Room Temp. ⇒
Low or High Temp. ⇒
VDD = 3.0V
1.4
1.1
Short Circuit Detection Delay
Time
t short
VDD = 3.0V
Charger Detection Voltage
VCHR
C out High Level Resistance
R COH
C out Low Level Resistance
R COL
D out High Level Resistance
R DOH
D out Low Level Resistance
R DOL
VDD = 1.8V ;
D out = 0.5V ;VN=1.8V
2.5
5.0
10.0
kΩ
Internal Resistance between VN
and VDD
R VND
VDD = 1.8V ; VN = 0V
100
300
900
kΩ
Internal Resistance between VN
and GND
R VNG
VDD = 3.5V ; VN=3.5V
10
20
40
kΩ
–
Detect Rising Edge of “ D out ”
Pin Voltage
(When VD1＜VDD＜VD2)
VDD = 3.5V ;
C out = 3.0V ; VN = 0V
VDD = 4.5V ; C out = 0.5V ;
VN = 0V
VDD = 3.5V ;
D out = 3.0V ;VN=0V
8.0
– 台灣類比科技股份有限公司 –
Advanced Analog Technology, Inc. –
Page 9 of 25
V2.0
Advanced Analog Technology, Inc.
AAT8661 Series
AAT8661G DETECTION VOLTAGE AND DELAY TIME (25℃)
PARAMETER
SYMBOL
TEST CONDITION
Over Charge Threshold Voltage
VC1
Over Charge Release Voltage
VC 2
Over Discharge Threshold
Voltage
VD1
Over Discharge Release Voltage
VD 2
Over Charge Delay Time
t C1
Detect Rising Edge of Supply
Voltage
Detect Falling Edge of Supply
Voltage
Detect Falling Edge of Supply
Voltage
Detect Rising Edge of Supply
Voltage
VDD = 3.6V to 4.5V
Over Discharge Delay Time
t D1
VDD = 3.6V to 2.2V
Detect Rising Edge of “VN” Pin
Voltage ( D out Response with tOC1
Delay Time)
Detect Rising Edge of “VN”
Pin Voltage ( D out Response
with tOC2 Delay Time)
VDD = 3.0V , Detect Rising Edge
of “VN” Pin Voltage ( D out
Response with t short Delay
Time)
MIN
TYP
MAX
UNIT
4.325
4.350
4.375
V
VC1-0.25 VC1-0.20 VC1-0.15
2.220
VD1+0.6
2.300
2.380
VD1+0.7 VD1+0.8
V
V
V
0.088
0.125
0.163
s
22.4
32.0
41.6
ms
180
200
220
mV
400
510
600
mV
VDD −1.7
VDD −1.3
VDD − 0.9
V
Over Current Level 1 Detection
Voltage
VOC1
Over Current Level 2 Detection
Voltage
VOC 2
Short Circuit Detection Voltage
Vshort
Over Current Level 1 Detection
Delay Time
t OC1
VDD = 3.0V
2.8
4.0
5.2
ms
Over Current Level 2 Detection
Delay Time
t OC 2
Room Temp. ⇒
Low or High Temp. ⇒
VDD = 3.0V
1.4
1.1
2.0
2.0
2.6
3.4
ms
ms
Short Circuit Detection Delay
Time
t short
VDD = 3.0V
10
50
μs
Charger Detection Voltage
VCHR
−2.0
−1.3
−0.6
V
C out High Resistance Level
R COH
1
2
10
kΩ
C out Low Resistance Level
R COL
VDD = 4.5V ;
C out = 0.5V ;VN=0V
150
602
2,380
kΩ
D out High Resistance Level
R DOH
VDD = 3.5V ;
D out = 3.0V ;VN=0V
2.5
5.0
10.0
kΩ
D out Low Resistance Level
R DOL
VDD = 1.8V ;
D out = 0.5V ;VN=1.8V
2.5
5.0
10.0
kΩ
Internal Resistance between VN
and VDD
R VND
VDD = 1.8V ; VN=0V
100
300
900
kΩ
Internal Resistance between VN
and GND
R VNG
VDD = 3.5V ; VN=3.5V
10
20
40
kΩ
–
Detect Rising Edge of “ D out ”
Pin Voltage(when VD1 ＜VDD ＜
VD2)
VDD = 3.5V ;
C out = 3.0V ;VN=0V
– 台灣類比科技股份有限公司 –
Advanced Analog Technology, Inc. –
Page 10 of 25
V2.0
Advanced Analog Technology, Inc.
AAT8661 Series
AAT8661H DETECTION VOLTAGE AND DELAY TIME (25℃)
PARAMETER
SYMBOL
TEST CONDITION
Over Charge Threshold Voltage
VC1
Over Charge Release Voltage
VC 2
Over Discharge Threshold
Voltage
VD1
Over Discharge Release Voltage
VD 2
Over Charge Delay Time
t C1
Detect Rising Edge of Supply
Voltage
Detect Falling Edge of Supply
Voltage
Detect Falling Edge of Supply
Voltage
Detect rising Edge of Supply
Voltage
VDD = 3.6V to 4.5V
Over Discharge Delay Time
t D1
VDD = 3.6V to 2.2V
MIN
TYP
MAX
UNIT
4.275
4.300
4.325
V
VC1-0.25 VC1-0.20 VC1-0.15
V
2.220
2.300
2.380
V
VD1-0.08
VD1
VD1+0.08
V
0.700
1.000
1.300
s
87.5
125.0
162.5
ms
150
170
mV
500
600
mV
VDD −1.3
VDD − 0.9
V
10.4
ms
2.0
2.0
2.6
3.4
ms
ms
10
50
μs
−2.0
−1.3
−0.6
V
1
2
10
kΩ
Detect Rising Edge of “VN” Pin
Voltage ( D out Response with tOC1
130
Delay Time)
Detect Rising Edge of “VN”
Pin Voltage ( D out Response
400
with tOC2 Delay Time)
VDD = 3.0V , Detect Rising Edge
of “VN” Pin Voltage ( D out
VDD −1.7
Response with t short Delay
Time)
VDD = 3.0V
5.6
Over Current Level 1 Detection
Voltage
VOC1
Over Current Level 2 Detection
Voltage
VOC 2
Short Circuit Detection Voltage
Vshort
Over Current Level 1 Detection
Delay Time
t OC1
Over Current Level 2 Detection
Delay Time
t OC 2
Room Temp. ⇒
Low or High Temp. ⇒
VDD = 3.0V
Short Circuit Detection Delay
Time
t short
VDD = 3.0V
Charger Detection Voltage
VCHR
C out High Resistance Level
R COH
C out Low Resistance Level
R COL
VDD = 4.5V ;
C out = 0.5V ;VN=0V
150
602
2,380
kΩ
D out High Resistance Level
R DOH
VDD = 3.5V ;
D out = 3.0V ;VN=0V
2.5
5.0
10.0
kΩ
D out Low Resistance Level
R DOL
VDD = 1.8V ;
D out = 0.5V ;VN=1.8V
2.5
5.0
10.0
kΩ
Internal Resistance between VN
and VDD
R VND
VDD = 1.8V ; VN=0V
100
300
900
kΩ
Internal Resistance between VN
and GND
R VNG
VDD = 3.5V ; VN=3.5V
10
20
40
kΩ
–
Detect Rising Edge of “ D out ”
Pin Voltage
(when VD1＜VDD＜VD2)
VDD = 3.5V ;
C out = 3.0V ;VN=0V
1.4
1.1
8.0
– 台灣類比科技股份有限公司 –
Advanced Analog Technology, Inc. –
Page 11 of 25
V2.0
Advanced Analog Technology, Inc.
AAT8661 Series
AAT8661I DETECTION VOLTAGE AND DELAY TIME (25℃)
PARAMETER
SYMBOL
TEST CONDITION
Over Charge Threshold Voltage
VC1
Over Charge Release Voltage
VC 2
Over Discharge Threshold
Voltage
VD1
Over Discharge Release Voltage
VD 2
Over Charge Delay Time
t C1
Detect Rising Edge of Supply
Voltage
Detect Falling Edge of Supply
Voltage
Detect Falling Edge of Supply
Voltage
Detect Rising Edge of Supply
Voltage
VDD = 3.6V to 4.5V
Over Discharge Delay Time
t D1
VDD = 3.6V to 2.2V
MIN
TYP
MAX UNIT
4.275
4.300
4.325
VC1-0.25 VC1-0.20 VC1-0.15
V
V
2.220
2.300
2.380
V
VD1-0.08
VD1
VD1+0.08
V
0.700
1.000
1.300
s
87.5
125.0
162.5
ms
130
150
mV
490
600
mV
VDD −1.3
VDD − 0.9
V
8.0
10.4
ms
2.0
2.0
2.6
3.4
ms
ms
10
50
μs
−2.0
−1.3
−0.6
V
1
2
10
kΩ
Detect Rising Edge of “VN” Pin
Voltage ( D out Response with tOC1
110
Delay Time)
Detect Rising Edge of “VN”
Pin Voltage ( D out Response
400
with tOC2 Delay Time)
VDD = 3.0V , Detect Rising Edge
of “VN” Pin Voltage ( D out
VDD −1.7
Response with t short Delay
Time)
VDD = 3.0V
5.6
Over Current Level 1 Detection
Voltage
VOC1
Over Current Level 2 Detection
Voltage
VOC 2
Short Circuit Detection Voltage
Vshort
Over Current Level 1 Detection
Delay Time
t OC1
Over Current Level 2 Detection
Delay Time
t OC 2
Room Temp. ⇒
Low or High Temp. ⇒
VDD = 3.0V
Short Circuit Detection Delay
Time
t short
VDD = 3.0V
Charger Detection Voltage
VCHR
C out High Resistance Level
R COH
C out Low Resistance Level
R COL
VDD = 4.5V ;
C out = 0.5V ;VN=0V
150
602
2,380
kΩ
D out High Resistance Level
R DOH
VDD = 3.5V ;
D out = 3.0V ;VN=0V
2.5
5.0
10.0
kΩ
D out Low Resistance Level
R DOL
VDD = 1.8V ;
D out = 0.5V ;VN=1.8V
2.5
5.0
10.0
kΩ
Internal Resistance between VN
and VDD
R VND
VDD = 1.8V ; VN=0V
100
300
900
kΩ
Internal Resistance between VN
and GND
R VNG
VDD = 3.5V ; VN=3.5V
10
20
40
kΩ
–
Detect Rising Edge of “ D out ”
Pin Voltage
(when VD1＜VDD＜VD2)
VDD = 3.5V ;
C out = 3.0V ;VN=0V
1.4
1.1
– 台灣類比科技股份有限公司 –
Advanced Analog Technology, Inc. –
Page 12 of 25
V2.0
Advanced Analog Technology, Inc.
AAT8661 Series
AAT8661J DETECTION VOLTAGE AND DELAY TIME (25℃)
PARAMETER
SYMBOL
TEST CONDITION
Over Charge Threshold Voltage
VC1
Over Charge Release Voltage
VC 2
Over Discharge Threshold
Voltage
VD1
Over Discharge Release Voltage
VD 2
Over Charge Delay Time
t C1
Detect Rising Edge of Supply
Voltage
Detect Falling Edge of Supply
Voltage
Detect Falling Edge of Supply
Voltage
Detect Rising Edge of Supply
Voltage
VDD = 3.6V to 4.5V
Over Discharge Delay Time
t D1
VDD = 3.6V to 2.2V
Detect Rising Edge of “VN” Pin
Voltage ( D out Response with tOC1
Delay Time)
Detect Rising Edge of “VN”
Pin Voltage ( D out Response
with tOC2 Delay Time)
VDD = 3.0V , Detect Rising Edge
of “VN” Pin Voltage ( D out
Response with t short Delay
Time)
VDD = 3.0V
MIN
TYP
MAX UNIT
4.255
4.280
4.305
VC1-0.25
VC1-0.20 VC1-0.15
V
V
2.201
2.281
2.361
V
VD1-0.08
VD1
VD1+0.08
V
0.700
1.000
1.300
s
87.5
125.0
162.5
ms
180
200
220
mV
400
510
600
mV
VDD −1.7
VDD −1.3
VDD − 0.9
V
5.6
8.0
10.4
ms
1.4
1.1
2.0
2.0
2.6
3.4
ms
ms
10
50
μs
−2.0
−1.3
−0.6
V
1
2
10
kΩ
Over Current Level 1 Detection
Voltage
VOC1
Over Current Level 2 Detection
Voltage
VOC 2
Short Circuit Detection Voltage
Vshort
Over Current Level 1 Detection
Delay Time
t OC1
Over Current Level 2 Detection
Delay Time
t OC 2
Room Temp. ⇒
Low or High Temp. ⇒
VDD = 3.0V
Short Circuit Detection Delay
Time
t short
VDD = 3.0V
Charger Detection Voltage
VCHR
C out High Level Resistance
R COH
C out Low Level Resistance
R COL
VDD = 4.5V ;
C out = 0.5V ;VN=0V
150
602
2,380
kΩ
D out High Level Resistance
R DOH
VDD = 3.5V ;
D out = 3.0V ;VN=0V
2.5
5.0
10.0
kΩ
D out Low Level Resistance
R DOL
VDD = 1.8V ;
D out = 0.5V ;VN=1.8V
2.5
5.0
10.0
kΩ
Internal Resistance between VN
and VDD
R VND
VDD = 1.8V ; VN=0V
100
300
900
kΩ
Internal Resistance between VN
and GND
R VNG
VDD = 3.5V ; VN=3.5V
10
20
40
kΩ
–
Detect Rising Edge of “ D out ”
Pin Voltage (when VD1＜VDD＜
VD2)
VDD = 3.5V ;
C out = 3.0V ;VN=0V
– 台灣類比科技股份有限公司 –
Advanced Analog Technology, Inc. –
Page 13 of 25
V2.0
Advanced Analog Technology, Inc.
AAT8661 Series
AAT8661K DETECTION VOLTAGE AND DELAY TIME (25℃)
PARAMETER
SYMBOL
TEST CONDITION
Over Charge Threshold Voltage
VC1
Over Charge Release Voltage
VC 2
Over Discharge Threshold Voltage
VD1
Over Discharge Release Voltage
VD 2
Over Charge Delay Time
t C1
Detect Rising Edge of Supply
Voltage
Detect Falling Edge of Supply
Voltage
Detect Falling Edge of Supply
Voltage
Detect Rising Edge of Supply
Voltage
VDD = 3.6V to 4.5V
Over Discharge Delay Time
t D1
VDD = 2 .8 V to 2.2V
Detect Rising Edge of “VN” Pin
Voltage ( D out Response with tOC1
Delay Time)
Detect Rising Edge of “VN”
Pin Voltage ( D out Response
with tOC2 Delay Time)
VDD = 3.0V , Detect Rising Edge
of “VN” Pin Voltage ( D out
Response with t short Delay
Time)
MIN
TYP
MAX
UNIT
4.225
4.250
4.275
V
VC1-0.25
VC1-0.20
VC1-0.15
V
2.201
2.281
2.361
V
VD1+0.5
VD1+0.6
VD1+0.7
V
0.700
1.000
1.300
s
87.5
125.0
162.5
ms
80
100
120
mV
400
480
600
mV
VDD −1.3
VDD − 0.9
V
Over Current Level 1 Detection
Voltage
VOC1
Over Current Level 2 Detection
Voltage
VOC 2
Short Circuit Detection Voltage
Vshort
Over Current Level 1 Detection
Delay Time
t OC1
VDD = 3.0V
5.6
8.0
10.4
ms
Over Current Level 2 Detection
Delay Time
t OC 2
Room Temp. ⇒
Low or High Temp. ⇒
VDD = 3.0V
1.4
1.1
2.0
2.0
2.6
3.4
ms
ms
Short Circuit Detection Delay
Time
t short
VDD = 3.0V
10
50
μs
Charger Detection Voltage
VCHR
−2.0
−1.3
−0.6
V
C out High Level Resistance
R COH
Detect Rising Edge of “ D out ”
Pin Voltage (when VD1＜VDD＜
VD2)
VDD =3.5V; C out =3.0V;VN=0V
1
2
10
kΩ
C out Low Level Resistance
R COL
VDD =4.5V; C out =0.5V;VN=0V
150
602
2,380
kΩ
D out High Level Resistance
R DOH
VDD =3.5V; D out =3.0V;VN=0V
2.5
5.0
10.0
kΩ
D out Low Level Resistance
R DOL
VDD =1.8V;
D out =0.5V;VN=1.8V
2.5
5.0
10.0
kΩ
Internal Resistance between VN
and VDD
R VND
VDD =1.8V; VN=0V
100
300
900
kΩ
Internal Resistance between VN
and GND
R VNG
VDD =3.5V; VN=3.5V
10
20
40
kΩ
–
VDD −1.7
– 台灣類比科技股份有限公司 –
Advanced Analog Technology, Inc. –
Page 14 of 25
V2.0
Advanced Analog Technology, Inc.
AAT8661 Series
SUMMARY OF AAT8661 DETECTION VOLTAGE AND DELAY TIME ( 25οC )
PARAMETER
SYMBOL
DEVICE
MIN
TYP
MAX
UNIT
VC1
AAT8661A
4.300
4.325
4.350
V
AAT8661B
4.325
4.350
4.375
V
AAT8661C
4.275
4.300
4.325
V
AAT8661D
4.255
4.280
4.305
V
AAT8661E
4.255
4.280
4.305
V
AAT8661F
4.300
4.325
4.350
V
AAT8661G
4.325
4.350
4.375
V
AAT8661H
4.275
4.30
4.325
V
AAT8661I
4.275
4.30
4.325
V
AAT8661J
4.255
4.280
4.305
V
AAT8661K
4.225
4.250
4.275
V
AAT8661A
VC1 − 0.30
VC1 − 0.25
VC1 − 0.20
V
AAT8661B
VC1 − 0.25
VC1 − 0.20
VC1 − 0.15
V
AAT8661C
VC1 − 0.25
VC1 − 0.20
VC1 − 0.15
V
AAT8661D
VC1 − 0.25
VC1 − 0.20
VC1 − 0.15
V
AAT8661E
VC1 − 0.25
VC1 − 0.20
VC1 − 0.15
V
AAT8661F
VC1 − 0.30
VC1-0.25
VC1 − 0.20
V
AAT8661G
VC1 − 0.25
VC1 − 0.20
VC1 − 0.15
V
AAT8661H
VC1 − 0.25
VC1 − 0.20
VC1 − 0.15
V
AAT8661I
VC1 − 0.25
VC1 − 0.20
VC1 − 0.15
V
AAT8661J
VC1 − 0.25
VC1 − 0.20
VC1 − 0.15
V
AAT8661K
VC1 − 0.25
VC1 − 0.20
VC1 − 0.15
V
AAT8661A
2.420
2.500
2.580
V
AAT8661B
2.220
2.300
2.380
V
AAT8661C
2.220
2.300
2.380
V
AAT8661D
2.201
2.281
2.361
V
AAT8661E
2.201
2.281
2.361
V
AAT8661F
2.420
2.500
2.580
V
AAT8661G
2.220
2.300
2.380
V
AAT8661H
2.220
2.300
2.380
V
AAT8661I
2.220
2.300
2.380
V
AAT8661J
2.201
2.281
2.361
V
AAT8661K
2.201
2.281
2.361
V
Over Charge Threshold Voltage
VC 2
Over Charge Release Voltage
VD1
Over Discharge Threshold Voltage
–
– 台灣類比科技股份有限公司 –
Advanced Analog Technology, Inc. –
Page 15 of 25
V2.0
Advanced Analog Technology, Inc.
AAT8661 Series
SUMMARY OF AAT8661 DETECTION VOLTAGE AND DELAY TIME (25℃)
PARAMETER
SYMBOL
DEVICE
MIN
TYP
MAX
UNIT
VD 2
AAT8661A
VD1+0.3
VD1+0.4
VD1+0.5
V
AAT8661B
VD1+0.6
VD1+0.7
VD1+0.8
V
AAT8661C
VD1 − 0.08
VD1 − 0.08
VD1
VD1+0.08
V
AAT8661D
VD1
VD1+0.08
V
AAT8661E
VD1+0.5
VD1+0.6
VD1+0.7
V
AAT8661F
VD1+0.3
VD1+0.4
VD1+0.5
V
AAT8661G
VD1+0.6
VD1+0.7
VD1+0.8
V
AAT8661H
VD1 − 0.08
VD1
VD1+0.08
V
AAT8661I
VD1 − 0.08
VD1
VD1+0.08
V
AAT8661J
VD1 − 0.08
VD1
VD1+0.08
V
AAT8661K
VD1+0.5
VD1+0.6
VD1+0.7
V
AAT8661A
0.700
1.000
1.300
s
AAT8661B
0.088
0.125
0.163
s
AAT8661C
0.700
1.000
1.300
s
AAT8661D
0.700
1.000
1.300
s
AAT8661E
0.700
1.000
1.300
s
AAT8661F
0.700
1.000
1.300
s
AAT8661G
0.088
0.125
0.163
s
AAT8661H
0.700
1.000
1.300
s
AAT8661I
0.700
1.000
1.300
s
AAT8661J
0.700
1.000
1.300
s
AAT8661K
0.700
1.000
1.300
s
AAT8661A
87.5
125.0
162.5
ms
AAT8661B
22.4
32.0
41.6
ms
AAT8661C
87.5
125.0
162.5
ms
AAT8661D
87.5
125.0
162.5
ms
AAT8661E
87.5
125.0
162.5
ms
AAT8661F
87.5
125.0
162.5
ms
AAT8661G
22.4
32.0
41.6
ms
AAT8661H
87.5
125.0
162.5
ms
AAT8661I
87.5
125.0
162.5
ms
AAT8661J
87.5
125.0
162.5
ms
AAT8661K
87.5
125.0
162.5
ms
Over Discharge Release Voltage
t C1
Over Charge Delay Time
t D1
Over Discharge Delay Time
–
– 台灣類比科技股份有限公司 –
Advanced Analog Technology, Inc. –
Page 16 of 25
V2.0
Advanced Analog Technology, Inc.
AAT8661 Series
SUMMARY OF AAT8661 DETECTION VOLTAGE AND DELAY TIME (25℃)
PARAMETER
SYMBOL DEVICE
VOC1
Over Current Level 1 Detection Voltage
VOC 2
Over Current Level 2 Detection Voltage
t OC1
Over Current Level 1 Detection Delay Time
–
MIN
TYP
MAX
UNIT
AAT8661A
130
150
170
mV
AAT8661B
130
150
170
mV
AAT8661C
80
100
120
mV
AAT8661D
110
130
150
mV
AAT8661E
80
100
120
mV
AAT8661F
80
100
120
mV
AAT8661G
180
200
220
mV
AAT8661H
130
150
170
mV
AAT8661I
110
130
150
mV
AAT8661J
180
200
220
mV
AAT8661K
80
100
120
mV
AAT8661A
400
500
600
mV
AAT8661B
400
500
600
mV
AAT8661C
400
480
600
mV
AAT8661D
400
490
600
mV
AAT8661E
400
480
600
mV
AAT8661F
400
480
600
mV
AAT8661G
400
510
600
mV
AAT8661H
400
500
600
mV
AAT8661I
400
490
600
mV
AAT8661J
400
510
600
mV
AAT8661K
400
480
600
mV
AAT8661A
5.6
8.0
10.4
ms
AAT8661B
2.8
4.0
5.2
ms
AAT8661C
5.6
8.0
10.4
ms
AAT8661D
5.6
8.0
10.4
ms
AAT8661E
5.6
8.0
10.4
ms
AAT8661F
5.6
8.0
10.4
ms
AAT8661G
2.8
4.0
5.2
ms
AAT8661H
5.6
8.0
10.4
ms
AAT8661I
5.6
8.0
10.4
ms
AAT8661J
5.6
8.0
10.4
ms
AAT8661K
5.6
8.0
10.4
ms
– 台灣類比科技股份有限公司 –
Advanced Analog Technology, Inc. –
Page 17 of 25
V2.0
Advanced Analog Technology, Inc.
AAT8661 Series
TIMING CHART
AAT8661 (CHARGE AND DISCHARGE)
V
VC1
VC2
DD
VD2
VD1
V
D
t
DD
t
D 1
D 1
out
GND
t
V DD
C 1
t
C 1
C out
VN
V
DD
GND
VCHR
–
– 台灣類比科技股份有限公司 –
Advanced Analog Technology, Inc. –
Page 18 of 25
V2.0
Advanced Analog Technology, Inc.
AAT8661 Series
TIMING CHART
AAT8661 (UNUSUAL CHARGE CURRENT, OVER CURRENT, SHORT
CIRCUIT)
V DD
t OC1
V DD
D
t OC 2
t OC 2
t short
t OC1
out
V DD
V
t C1
DD
C out
V
DD
Time
–
– 台灣類比科技股份有限公司 –
Advanced Analog Technology, Inc. –
Page 19 of 25
V2.0
Advanced Analog Technology, Inc.
AAT8661 Series
TYPICAL APPLICATION
+
R1
100Ω
C1
0.1μF
VDD
Li
Battery
VN
GND
DOUT
COUT
R2
1kΩ
−
–
– 台灣類比科技股份有限公司 –
Advanced Analog Technology, Inc. –
Page 20 of 25
V2.0
Advanced Analog Technology, Inc.
AAT8661 Series
PACKAGE DIMENSION
–
– 台灣類比科技股份有限公司 –
Advanced Analog Technology, Inc. –
Page 21 of 25
V2.0
Advanced Analog Technology, Inc.
AAT8661 Series
PACKAGE DIMENSION (CONT.)
VARIATION (ALL DIMENSIONS SHOWN IN MILLIMETERS)
SYMBOL MIN
TYP
MAX
A
------
------
1.45
A1
------
------
0.15
A2
0.90
1.15
1.30
b
0.30
------
0.50
c
0.08
------
0.22
D
2.90 BSC
E
2.80 BSC
E1
1.60 BSC
e
0.95 BSC
e1
1.90 BSC
L
0.30
0.45
L1
0.60 REF
L2
0.25 BSC
0.60
R
0.10
------
------
R1
0.10
------
0.25
ο
θ
0
θ1
5ο
ο
4
10 ο
8ο
15 ο
NOTE:
1 JEDEC OUTLINE: MO-178 AB
–
– 台灣類比科技股份有限公司 –
Advanced Analog Technology, Inc. –
Page 22 of 25
V2.0
Advanced Analog Technology, Inc.
AAT8661 Series
TAPE AND REEL
–
– 台灣類比科技股份有限公司 –
Advanced Analog Technology, Inc. –
Page 23 of 25
V2.0
Advanced Analog Technology, Inc.
AAT8661 Series
TAPE AND REEL (CONT.)
X.XXX X
± 0.0025
X.XXX
± 0.006
X.XX
± 0.025
X.X
± 0.10
X
± 0.25
UNIT: MILLIMETERS
–
– 台灣類比科技股份有限公司 –
Advanced Analog Technology, Inc. –
Page 24 of 25
V2.0
Advanced Analog Technology, Inc.
AAT8661 Series
PART MARKING
PREVIOUS SOT26 TOP MARKING
AXXX
NOTE: SOT26 HAS NO BACK MARKING.
CURRENT SOT26 TOP MARKING
AXX
ORDERING INFORMATION
–
– 台灣類比科技股份有限公司 –
Advanced Analog Technology, Inc. –
Page 25 of 25
V2.0