Sony CXA2555Q Rf amplifier for cd player/cd-rom Datasheet

CXA2555Q
RF Amplifier for CD Player/CD-ROM
For the availability of this product, please contact the sales office.
Description
The CXA2555Q is an IC for RF signal processing
of CD player and CD-ROM.
Features
• Wide-band RF AC amplifier
(RF AC signal fc ≥ 20MHz)
• 4-mode RF equalizer (active filter type)
• RF equalizer boost amount and cut-off frequency
adjustable
• EFM time constant adjustable (switching function
provided)
• Peak hold time constant of mirror circuit adjustable
• Tracking error amplifier cut-off frequency adjustable
• Tracking error amplifier voltage gain adjustable
• Center error amplifier
• APC (Automatic Power Control) function
• APC ON/OFF control
• Supports laser coupler
Absolute Maximum Ratings
• Supply voltage
VCC
• Storage temperature Tstg
• Power consumption
PD
7
–65 to +150
800
V
°C
mW
32 pin QFP (Plastic)
Applications
• CD players
• CD-ROM drives
Functions
• RF summing amplifier
• RF equalizer
• Focus error amplifier
• Tracking error amplifier
• Center error amplifier
• Mirror detection function
• APC circuit
Operating Conditions
• Supply voltage
VCC – GND 3.0 to 5.5 V
• Operating temperature Topr
–20 to +75 °C
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
–1–
E96730B76
CXA2555Q
RFO
RFI
SUM OUT
EQ IN
RF C
BST C
FC C
APC ON
Block Diagram
32
31
30
29
28
27
26
25
VCA
BOOST
FILTER
CONTROL CONTROL CONTROL
LD
1
LPF
MODE
SW
DELAY
MIXER
PD
HPF
2
BOOST
20k
80k
10p
VC
4
23 MODE 2
44p
44k 39k
PD2
VCC
VC
18k
3
VCA
VCC
VS
PD1
LPF
24 MODE 1
80k
HOLD
PEAK
/BOT
22 RFO 1
VC
APC ON
80k
80k
22k
1.3V
51k
21 RFO 2
1.0V
56k 10k
1.25V
E
VCC
10k
Open only for
L/L mode
5
1k
VC
10k
40k
56k
55k
20 VCC
40k
VS
1.25V
VC
F
VC
VCC
VC
20k
6
19
40k
40k
20k
MIRR
VC
20k
VCA
20k
GND
10k
87k
18 CP
7
16k
10k
VC
VC
8
23k
174k
16k
VCA
20k
73.34k
20k
17
320k
VC
27p
164k
CE1
CE
TE C
13
14
15
16
VC
12
FE
11
FE B
10
CE IN
2p
9
TE
GND
TE1
27p
–2–
MIRR T
CXA2555Q
Pin Description
Pin
No.
Symbol
I/O
Equivalent circuit
Description
10k
1
LD
O
2
PD
I
1
APC amplifier output.
1k
55k
APC amplifier input.
2
8k
10k
147
20k
3
10k
20k
147
3
4
PD1
PD2
I
I
16k
4
Input of RF summing amplifier
and focus error amplifier.
16k
174k
164k
7
Ground.
GND
147
147
6
5
5
6
8
12
13
E
F
TE1
TE C
TE
I
I
O
I
O
147
147
160k
8
13
VCA
36.7k
147
12
–3–
Tracking error amplifier input for
Pins 5 and 6; tracking error
amplifier output for Pin 8;
tracking error amplifier lowfrequency gain setting for Pin
12; tracking error amplifier
output for Pin 13.
CXA2555Q
Pin
No.
Symbol
I/O
Equivalent circuit
Description
147
9
9
10
11
CE IN
CE1
CE
I
O
O
147
147
20k
10
11
Center error amplifier input for
pin 9; inverting amplifier output
for pin 10; non-inverting
amplifier output for pin 11.
20k
147
14
164k
14
15
FE B
FE
O
O
174k
147
15
120
16
VC
O
16
120
Focus bias adjustment for Pin
14; focus error amplifier output
for Pin 15.
(Vcc + GND)/2 DC voltage
output.
VCC
17
MIRR T
I
147
120k
80k
10k
17
10k
–4–
Peak hold time constant
adjustment.
CXA2555Q
Pin
No.
Symbol
I/O
Equivalent circuit
1.5k
18
CP
Description
Connects a mirror hold
capacitor.
Non-inverted input of mirror
comparator.
80k
I
147
18
20k
19
MIRR
147
40k
O
19
Mirror comparator output.
100k
20
VCC
Power supply.
3k
147
21
21
22
RFO 2
RFO 1
O
O
147
Buffer switch output for the RF
time constant setting for Pin 21.
ON when Pins 23 and 24 are
connected to GND.
EQ signal output for Pin 22.
22
Double-speed mode switching
input.
23
MODE 2
147
I
10k
40k
24
25
MODE 1
APC ON
I
I
Mode 1
Mode 2
×1
GND
GND
×N
VCC
GND
× 1.5N
GND
VCC
× 2.0N
VCC
VCC
23
147
10k
40k
24
N is varied according to the
external resistor connected to
Pin 26.
147
25
100k
–5–
Switching pin for APC amplifier
ON/OFF.
OFF when connected to Vcc;
ON when connected to GND.
CXA2555Q
Pin
No.
Symbol
I/O
Equivalent circuit
Description
5k
5k
26
FC C
5k
26
5k
27
27
BST C
I
28
RF C
I
Input to set the RF equalizer
LPF cut-off frequency.
147
I
Sets the high-frequency boost
amount of RF equalizer.
Sets the low-frequency gain of
RF amplifier and RF equalizer.
10k
147
28
430
147
29
EQ IN
I
29
RF equalizer input.
2k
10k
10k
20k
30
SUM
OUT
RF summing amplifier output
inversion.
O
20k
147
30
–6–
CXA2555Q
Pin
No.
Symbol
I/O
Equivalent circuit
Description
39k
31
RFI
I
Mirror circuit input.
The RF summing amplifier
output is input.
147 18k
31
44k
15k
32
RFO
147
32
O
15k
–7–
RF signal output.
Eye pattern check point.
–8–
16
V1 = 100mVp-p
f = 100kHz
32
G1-1
Voltage gain
Maximum output amplitude H V2-2
Maximum output amplitude L
18
19
V2-3
F2-2
Frequency response 2
16
15
17
G2-2
Voltage gain 2
F2-1
G2-1
Voltage gain 1
Frequency response 1
V2-1
Offset voltage
G2-3
V1-3
Maximum output amplitude L
O
O
17.5 20.5 23.5
V1 = 100mVp-p
f = 1kHz
15
–3
V1 = 100mVp-p, f = 20kHz
Difference for G2-2
DC voltage measurement
DC voltage measurement
15
15
15
O
O
300mV
–3
V1 = 100mVp-p, f = 20kHz
Difference for G2-1
15
—
1.9
–2.5
300mV
17.5 20.5 23.5
V1 = 100mVp-p
f = 1kHz
—
—
—
2.5
–2.3 –1.7
2.4
—
—
0
60
15
0
–60
DC voltage measurement
15
–1.6 –0.95
0V
—
—
DC voltage measurement
DC voltage measurement 1.75 2.25
—
32
32
—
V1 = 100mVp-p, f = 10MHz
Difference for G1-1
32
11.5
–4.5
22
275
–300mV
300mV
8
V1 = 100mVp-p, f = 100kHz
4.5
Difference for G1-1
32
–3
–8
V1 = 100mVp-p, f = 100kHz
–11.5
Difference for G1-1
19
32
G2-1 – G2-2
B
A
C
15
O
O
O
O
O
O
O
O
F1-1
Frequency response
V1-2
O
O
G1-3
VCA gain 2
Maximum output amplitude H
O
O
G1-2
O
VCA gain 1
O
140
V
V
dB
dB
dB
dB
dB
mV
V
V
dB
dB
dB
dB
mV
mA
–65
43.5
DC current measurement
30
32
18.5
V1-1
0.3V
0V
Offset voltage
0V
Typ. Max. Unit
DC current measurement –43.5 –30 –18.5 mA
B
Min.
7
E3
IEE
Current consumption
B
E2
DC current measurement
ICC
Current consumption
S1 S2 S3 S4 S5 S6 S7 S8 S9 S10 S11 S12 S13
20
E1
Bias conditions
Description of output
waveform and
measurement method
SW conditions
(Ta = 25°C, VCC = 2.5V, GND = Vc, VEE = –2.5V)
Measurement point
Symbol
Measurement item
Voltage gain difference
14
13
12
11
10
9
8
7
6
5
2
1
FE amplifier
No.
RF DC amplifier
Electrical Characteristics
CXA2555Q
–9–
F3-1
O
O
O
G4-1
F4-1
Voltage gain 1
Frequency response 1
Maximum output amplitude H V4-2
Maximum output amplitude L V4-3
35
36
34
33
32
V4-1
O
O
Maximum output amplitude H V3-2
Maximum output amplitude L V3-3
O
F3-4
Frequency response 4
O
F3-3
O
Frequency response 3
Frequency response 2
O
B
O
G3-5
VCA gain 2
F3-2
A
O
G3-4
VCA gain 1
Frequency response 1
C
O
G3-3
Voltage gain difference
O
G3-2
Voltage gain 2
O
G3-1
Voltage gain 1
B
V3-1
Offset voltage
B
O
O
O
O
S1 S2 S3 S4 S5 S6 S7 S8 S9 S10 S11 S12 S13
SW conditions
Symbol
Measurement item
Offset voltage
31
30
29
28
27
26
25
24
23
22
21
20
TE amplifier
CE amplifier
No.
0.3V
0V
V1 = 100mVp-p, f = 1kHz 23.9 26.9 29.9
–3
–3
–3
V1 = 100mVp-p, f = 20kHz
Difference for G3-1
V1 = 100mVp-p, f = 20kHz
Difference for G3-2
V1 = 100mVp-p, f = 180kHz
Difference for G3-1
V1 = 100mVp-p, f = 180kHz
Difference for G3-2
13
13
13
11
300mV
DC voltage measurement
—
DC voltage measurement 0.85
–3
V1 = 100mVp-p, f = 20kHz
Difference for G3-1
11
11
17
V1 = 100mVp-p, f = 1kHz
Difference for G2-1
11
300mV
–90
DC voltage measurement
—
11
DC voltage measurement
1.9
0V
13
13
13
DC voltage measurement
dB
V1 = 100mVp-p, f = 1kHz 11.9 14.9 17.9
–3
G3-1 – G3-2
13
13
dB
17.9 20.9 23.9
V1 = 100mVp-p
f = 1kHz
13
–2.0
17.9 20.9 23.9
—
—
—
—
—
2.0
—
—
23
200
–2.1 –0.85
1.7
—
20
65
–2.2 –1.7
2.4
—
—
—
—
0
V
V
dB
dB
mV
V
V
dB
dB
dB
dB
dB
dB
dB
mV
V1 = 100mVp-p
f = 1kHz
150
13
30
–60
DC voltage measurement
13
Min. Typ. Max. Unit
13
0V
E3
Description of output
waveform and
measurement method
Measurement point
300mV
300mV
E2
E1
Bias conditions
CXA2555Q
– 10 –
O
O
O
O
G5-3
F5-1
F5-2
F5-3
Boost gain
O
O
O
O
Bottom hold frequency response F6-2
Maximum operating frequency 1 F6-3
Maximum operating frequency 2 F6-4
V6-3
V6-4
Minimum input voltage
Maximum input voltage
55
56
57
54
53
O
O
Mirror hold frequency response F6-1
52
51
50
O
VN
Output noise
O
B
V6-2
O
V5-4
Maximum output amplitude L
O
O
O
O
O
A
Low level output voltage
O
Maximum output amplitude H V5-3
O
O
O
O
O
O
O
O
F5-4
Frequency response 4
Frequency response 3
Frequency response 2
Frequency response 1
O
G5-2
VCA gain 1
O
O
O
O
O
O
O
–400mV
–400mV
–400mV
–400mV
–400mV
–200mV
–400mV
–400mV
0V
–300mV
300mV
0V
1.0V
19
19
19
19
19
19
19
19
22
22
22
22
22
22
22
22
22
22
22
O
0V
G5-1
0.3V
Voltage gain 1
0V
21
B
V5-2
E3
Offset voltage
B
E2
Measurement point
V5-1
E1
Bias conditions
Offset voltage
S1 S2 S3 S4 S5 S6 S7 S8 S9 S10 S11 S12 S13
SW conditions
Symbol
Measurement item
High level output voltage V6-1
48
47
46
45
44
43
42
41
40
39
38
37
RFAC Amplifier (RF Equalizer + Sum Amplifier)
MIRR
No.
1.5
–3
–3
–3
V1 = 100mVp-p, f = 2MHz
Difference for G5-1
V1 = 25mVp-p, f = 1MHz
Difference for G1-1
V1 = 25mVp-p, f = 10MHz
Difference for G1-1
V1 = 25mVp-p, f = 15MHz
Difference for G1-1
f (V1) = 10kHz
f (V1) = 10kHz
V1 = 800mVp-p
V1 = 800mVp-p
V1 = 800mVp-p
V1 = 0.8Vp-p, 55% AM Mod.
V1 = 0.8Vp-p, f = 10kHz
V1 = 0.8Vp-p, f = 10kHz
HPF = 400Hz, LPF = 3MHz
V5-1 – V5-4
V5-3 – V5-1
—
0.35
250
40
—
—
—
1.8
—
0.45
1.15
—
—
—
—
4
8
—
—
—
—
550
400
—
—
—
0.9
1.8
—
—
—
900
600
–2.2
—
6
—
—
—
—
—
—
6.5
10.5
22.5 26.5
0.8
0.45 0.85
–3
4.5
V1 = 25mVp-p, f = 100kHz
Difference for G5-1
V1 = 25mVp-p, f = 20MHz
Difference for G1-1
17
0.25
Vp-p
Vp-p
kHz
kHz
Hz
Hz
V
V
mV
V
V
dB
dB
dB
dB
dB
dB
dB
V
V
Typ. Max. Unit
0.25 0.75 1.15
Min.
V1 = 25mVp-p, f = 100kHz
Description of output
waveform and
measurement method
CXA2555Q
63
62
61
60
59
58
APC
VC
No.
V7-2
V7-3
V7-4
V7-5
Output voltage 2
Output voltage 3
Output voltage 4
Output voltage 5
VC
V7-1
Output voltage 1
Output voltage
Symbol
Measurement item
B
B
O
S1 S2 S3 S4 S5 S6 S7 S8 S9 S10 S11 S12 S13
SW conditions
0V
E1
0.3V
0V
0V
177mV
123mV
69mV
E2
Bias conditions
0V
E3
16
1
1
1
1
1
Measurement point
—
–1.6 –0.9
—
I1 = 0.8mADC
DC voltage measurement
DC voltage measurement –0.1
1.8
0.3
DC voltage measurement
DC voltage measurement
0
–0.9
2.4
1.6
0.1
0
—
—
V
V
V
V
V
V
Min. Typ. Max. Unit
DC voltage measurement –1.2 –0.35 1.4
DC voltage measurement
Description of output
waveform and
measurement method
CXA2555Q
– 11 –
CXA2555Q
Electrical Characteristics Measurement Circuit
20k
20k
VCC
2k
B
A
S9
VCC
C
20k
5.1k
VCC
S13
10k
S8
5.1k
S7
27
26
25
RF C
BST C
FC C
APC
ON
LD
28
EQ IN
1
VCC
29
SUM OUT
I1
30
RFI
S10
31
RFO
VEE
32
E2
2
VEE
MODE 1
S12
VCC
S11
VEE
VCC
24
MODE 2 23
PD
3
PD1
RFO 1 22
4
PD2
RFO 2 21
5
E
VCC 20
6
F
MIRR 19
7
GND
8
TE1
VEE
1µ
10k
1µ
10k
S1
S2
44k
S3
VCC
112k
44k
S4
0.033µ
VEE
CP 18
CE1
CE
TE C
TE
FE B
FE
VC
E3
CE IN
112k
9
10
11
12
13
14
15
16
MIRR T 17
VCC
S5
10k
V1
10k
100k
A
E1
10k
S6
C
B
20k
– 12 –
10k
33µ
33µ
VEE
20k
10k
VEE
CXA2555Q
Application Circuit
LD ON
VCC
100µ/6.3V
10
47k
VC
0.1µ
GND
3.9k
0.1µ
6.8k
31
30
29
28
27
26
SUM OUT
EQ IN
RF C
BST C
FC C
25
APC
ON
32
RFI
1µ/6.3V
RFO
10µH
24
MODE 1 IN
MODE 2 23
MODE 2 IN
1
LD
2
PD
PD1 IN
3
PD1
RFO 1 22
PD2 IN
4
PD2
RFO 2 21
MODE 1
500 100
1000p
4700p
RF AC Out
VCC
VC
62k
E IN
F IN
33µ
100k
∗
5
E
VCC 20
6
F
MIRR 19
7
GND
8
TE1
VC
3p
0.1µ
47k
33µ 120k
Mirror Out
0.1µ
CP 18
CE1
CE
TE C
TE
FE B
FE
VC
0.1µ
CE IN
VC
9
10
11
12
13
14
15
16
MIRR T 17
10k
VC
10k
Tracking Error Out
Center Error Out
47k
VC
Focus Error Out
AL IN
Application circuits shown are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for
any problems arising out of the use of these circuits or for any infringement of third party patent and other right due to same.
– 13 –
CXA2555Q
Description of Functions
RF Block
The RF signal processing is performed by this circuit.
The output is separated to AC and DC. The AC is the capacitance-coupled input via the equalizer circuit and
used for the EFM demodulation signal processing. The DC contains the DC component and is used for the
mirror, defect and FOK signal processings.
The VCA function is provided for both the AC and DC signal processing systems. Pin 28 is the control voltage
input pin. (See the characteristics graphs on page 19 and page 20 for the gain and control voltage.)
RF Equalizer Block Diagram is as shown below:
EQ IN
LPF1
DELAY
FC C
MIXER
HPF
Boost
FC C
BST C
LPF2
LPF3
LPF4
VCA
FC C
FC C
FC C
RF C
EQ OUT
The equalizer function is provided for the AC signal processing system for the EFM signal demodulation.
The each filter is constructed in the Bessel type which has the little group delay difference.
The boost frequency and boost amount can be set by the external resistors connected to Pins 26 and 27.
(See the characteristics graphs on page 19 for the boost frequency and boost amount.)
The transmittance for each filter is as follows:
HPF: (KS2) / (S2 + 3.22597S + 2.94933)
LPF1: (2.94933 ) / (S2 + 3.22597S + 2.94933)
LPF2: (3.32507 ) / (S2 + 2.75939S + 3.32507)
LPF3: (4.20534 ) / (S2 + 1.82061S + 4.20534)
LPF4: (1.68536 ) / (S + 1.68536)
– 14 –
CXA2555Q
RF DC Amplifier
The signal currents from the photodiodes A, B, C and D are I-V converted and input to Pins 3 and 4 as PD1 =
A + C, PD2 = B + D.
These signals are added by the RF summing amplifier, inverted by the RF drive amplifier and output to Pin 32.
The VCA control voltage on Pin 28 is used for the gain adjustment.
47k
Vc
RF C
SUM OUT
RFO
32
28
30
10k
I-V
PD1
PD2
20k
3
20k
VCA
4
Vc
I-V
RF
Summing Amp
The low frequency component of the RFO output voltage is as follows:
VRFO = 4.9 × (PD1 + PD2)
(RFC voltage = 1/2 VC)
Focus Error Amplifier
The operation of PD2-PD1 is performed and the resulting signal is output to Pin 15.
27p
174k
I-V
PD1
PD2
I-V
16k
15 FE
3
Focus
Error Amp
16k
4
164k
87k
27p
Vc
14
FE B
47k
The low frequency component of the FE output voltage is as follows:
VFE =
174k
× (PD2 – PD1)
16k
= 10.9 × (PD2 – PD1)
– 15 –
CXA2555Q
Tracking Error Amplifier
The signal current from the photodiode F is I-V converted and input to Pin 6 via the input resistor. The signal
current from the photodiode E is I-V converted and input to Pin 5 after its gain is adjusted by the volume.
These signals undergo operational amplification at the tracking error amplifier, VCA and tracking drive
amplifier and they are output to Pin 13.
14p
Vc
2p
62k
320k
100k
I-V
E
44k
F
73.4k
5
VCA
13 TE
Vc
6
I-V 112k
TE1
8
12
TE C
Vc
47k
The low frequency component of the TE output voltage is as follows:
VTE =
112k
320k
×
× (F – E)
44k
73.4k
= 11.1 × (F – E)
(TEC voltage = 1/2 VC)
Center Error Amplifier
The input signal is operational amplified by the center error amplifier and center drive amplifier after passing
via the input resistor and then it is output to Pin 11.
20k
10k
Vin
CE IN
20k
9
11 CE
100k
23k
CE1
10k
10
Vc
The low frequency component of the CE output voltage is as follows:
VCE =
100k
×
10k
20k
× Vin
20k
= 10 × Vin
– 16 –
CXA2555Q
Mirror Circuit
The mirror circuit performs peak and bottom hold after RFI signal has been amplified. The peak hold is
executed with the time constant which follows the traverse signal of 100kHz for L/L mode (both of Pins 23 and
24 are connected to GND) and maximum 600kHz (adjustable with the DC voltage on Pin 17) for L/H, H/L, H/H
modes. The bottom hold is executed with the time constant which follows the rotation cycle envelope
fluctuation.
44k
RFI
Mirr
Hold
Amp
1.0V
3.125V
51k
Vc
39k
80k
44p
18k
H
G
31
Vc
Mirr Amp
I
10p
Vc
RFO
Peak &
Bottom
Hold
18
22k
80k
K
Mirr
Dif Amp
20k
Mirr
Comparator
1.3V
RFO
G
(RFI)
H
(PEAK HOLD)
AAAAAA
AAA
AA
AAAAAA
AAA
AA
AAAAAA
AAA
AA
AAAAAA
AAA
AA
AAAAAA
AAA
AA
AAAAAA
AAA
Vc
0.33µ
J
80k
Open only 80k
for L/L mode
CP
Vcc
17
19
MIRR T
MIRR
0V
0V
0V
I
(BOTTOM HOLD)
0V
J
K
(MIRROR HOLD)
H
MIRR
L
The mirror signal is output by comparing to the signal K (2/3 level of the J peak value which is peak-held with a
large time constant) where the difference of hold signals H and I is obtained. The mirror output is low for tracks
on the disc and high for the area between tracks (the mirror areas). In addition, a high signal is output when a
defect is detected. The mirror hold time constant must be sufficiently large in comparison with the traverse
signal.
– 17 –
CXA2555Q
Center Voltage Generation Circuit
The center voltage of VR = (Vcc + GND)/2 is supplied. The maximum current is approximately ±3mA
VCC
VCC
40k
Vc Buffer
25
16
VR
Vc
40k
APC Circuit
When the laser diode is driven by a constant current, the optical power output has extremely large negative
temperature characteristics.
The APC circuit is used to maintain the optical power output at a constant level. The laser diode current is
controlled according to the monitor photodiode output.
APC is ON by connecting APC_ON pin to GND; it is OFF by connecting the pin to Vcc.
VCC
56k
8k
PD
10k
2
100µ
1k
1
10k
55k
10
LD
56k
10µ
100
10k
1.25V
500
1µ
– 18 –
CXA2555Q
RF AC Characteristics Graphs (Pin 22)
Frequency response
Boost gain characteristics
28
8
1
VC
2
Rbst = 3.9kΩ
L/H
RF C =
26
6
Rfc = 6.8kΩ
L/L
H/L
5
Boost [dB]
Gain [dB]
Rfc =6.8kΩ,
1
RF C =
VC
2
7
H/H
24
4
3
2
22
1
0
20
10–1
–1
100
Frequency [MHz]
5
0
101
Cut-off frequency
Rbst = 0Ω, RF C =
20
35
1
VC
2
H/H Mode
30
Gv [dB]
Fc [MHz]
15
VCA characteristics
25
20
10
Rbst [kΩ]
15
10
25
20
15
5
10
4
6
8
10
12
14
Rfc [kΩ]
16
18
20
0.8
1.0
1.2
1.4
RF C [V]
1.6
1.8
Notes) In the graphs above,
Rfc: FC C (pin 26) external resistor value
Rbst: BST C (pin 27) external resistor value
∗ To ensure stable operation, it is recommended to select Rfc value of 6.2kΩ and above, and Rbst of 10kΩ
and below in all cases.
– 19 –
CXA2555Q
RF DC Characteristics Graphs (Pin 32)
Frequency response
VCA characteristics
25
RF C =
30
1
VC
2
28
26
24
Gv [dB]
Gain [dB]
20
15
22
20
18
16
14
12
10
10–1
10
100
Frequency [MHz]
0.8
101
1.0
1.2
1.4
RF C [V]
1.6
1.8
TE Characteristics Graphs (Pin 13)
Frequency response
VCA characteristics
30
25
TE C =
1
VC
2
28
26
H/L, L/H, H/H
24
Gv [dB]
Gain [dB]
20
L/L
15
22
20
18
16
14
12
10
100
10
101
102
Frequency [kHz]
103
FE frequency response (Pin 15)
0.4
0.6
0.8
1.0
1.2 1.4
TE C [V]
1.6
1.8
2.0
CE frequency response (Pin 11)
Frequency response
Frequency response
25
20
20
Gain [dB]
Gain [dB]
25
15
10
100
15
101
102
Frequency [kHz]
10
100
103
– 20 –
101
102
Frequency [kHz]
103
CXA2555Q
MIRROR Characteristics Graph (Pin 19)
Maximum operating frequency vs.
MIRR T pin voltage
600
Vin = –0.4VDC, 800mVp-p
H/L, L/H, or H/H Mode
550
500
fmax [kHz]
450
400
350
300
250
200
150
100
1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6
MIRR T [V]
APC Characteristics Graph (Pin 1)
LD voltage vs. PD voltage
5.0
4.5
4.0
LD [V]
3.5
3.0
2.5
2.0
1.5
1.0
0.5
80
100
120
140
PD [mV]
– 21 –
160
180
200
CXA2555Q
Package Outline
Unit: mm
32PIN QFP (PLASTIC)
9.0 ± 0.2
24
0.1
+ 0.35
1.5 – 0.15
+ 0.3
7.0 – 0.1
17
16
32
9
(8.0)
25
1
+ 0.2
0.1 – 0.1
0.8
+ 0.15
0.3 – 0.1
± 0.12 M
+ 0.1
0.127 – 0.05
0° to 10°
PACKAGE MATERIAL
EPOXY RESIN
SONY CODE
QFP-32P-L01
LEAD TREATMENT
SOLDER PLATING
EIAJ CODE
∗QFP032-P-0707-A
LEAD MATERIAL
42 ALLOY
PACKAGE WEIGHT
0.2g
JEDEC CODE
– 22 –
0.50
8
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