HiPerFETTM Power MOSFETs IXFR 58N20Q ISOPLUS247TM Q-Class (Electrically Isolated Back Surface) VDSS = = ID25 RDS(on) = 200 V 50 A Ω 40 mΩ trr ≤ 200 ns N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 200 200 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 IDM IAR TC = 25°C TC = 25°C, Note 1 TC = 25°C 50 232 58 A A A EAR EAS TC = 25°C TC = 25°C 30 1.0 mJ J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω 5 V/ns PD TC = 25°C 300 W -55 ... +150 150 -55 ... +150 °C °C °C 250 °C 2500 V~ 5 g TJ TJM Tstg TL 1.6 mm (0.062 in.) from case for 10 s VISOL 50/60 Hz, RMS ISOPLUS 247TM E153432 G D Isolated back surface* G = Gate S = Source D = Drain * Patent pending Features t = 1 min Weight z z z z z z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low drain to tab capacitance(<50pF) IXYS advanced low Qg process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Fast intrinsic diode Applications Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VDSS VGS = 0 V, ID = 250 µA 200 V VGS(th) VDS = VGS, ID = 4mA 2.0 4.0 V IGSS VGS = ±20 V, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 29A Note 2 © 2003 IXYS All rights reserved z z z z z ±100 nA DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Advantages TJ = 25°C TJ = 125°C 25 µA 1 mA z 40 mΩ z z Easy assembly Space savings High power density DS98591B(01/03) IXFR 58N20Q Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 10 V; ID = 29A Note 2 24 34 S 3600 pF 870 pF Crss 280 pF td(on) 20 ns Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz tr VGS = 10 V, VDS = 0.5 VDSS, ID = 29A 40 ns td(off) RG = 1.5 Ω (External), 40 ns tf 13 ns Qg(on) 98 140 nC 25 35 nC 45 70 nC 0.5 K/W Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = 29A Qgd RthJC RthCK (TO-247) Source-Drain Diode Symbol Test Conditions IS VGS = 0 V ISM Repetitive, Note 1 VSD IF = Is, VGS = 0 V, Note 2 0.15 K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. t rr QRM ISOPLUS 247 OUTLINE IF = Is, -di/dt = 100 A/µs, VR = 100 V IRM 58 A 232 A 1.5 V 200 ns 0.7 µC 7 A Note: 1. Pulse width limited by TJM 2. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1