ISC MJ13334 Isc silicon npn power transistor Datasheet

isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
MJ13334
DESCRIPTION
·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 450V(Min)
·High Switching Speed
APPLICATIONS
·Designed for high-voltage ,high-speed, power switching in
inductive circuits where fall time is critical. They are particularly suited for line operated switchmode applications.
·Switching regulators
·Inverters
·Solenoid and relay drivers
·Motor controls
·Deflection circuits
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCEV
Collector-Emitter Voltage
750
V
VCEO
Collector-Emitter Voltage
450
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
20
A
ICM
Collector Current-Peak
30
A
IB
Base Current-Continuous
10
A
IBM
Base Current-Peak
15
A
PC
Collector Power Dissipation@TC=25℃
175
W
TJ
Junction Temperature
200
℃
Tstg
Storage Temperature
-65~200
℃
B
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
1.0
℃/W
isc Website:www.iscsemi.cn
isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
MJ13334
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC=100mA ; IB=0
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= 10A; IB=2A
IC= 10A; IB=2A,TC=100℃
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= 20A; IB=6.7A
Base-Emitter Saturation Voltage
ICEV
MIN
TYP.
MAX
450
UNIT
V
1.8
2.4
V
5
V
IC= 10A; IB= 2A
IC= 10A; IB= 2A,TC=100℃
1.8
1.8
V
Collector Cutoff Current
VCEV=450V;VBE(off)=1.5V
VCEV=450V;VBE(off)=1.5V;TC=150℃
0.25
5.0
mA
ICER
Collector Cutoff Current
VCE= 450V; RBE= 50Ω,TC= 100℃
5.0
mA
IEBO
Emitter Cutoff Current
VEB= 6V; IC=0
1
mA
hFE
DC Current Gain
IC= 5A ; VCE= 5V
10
60
Current Gain-Bandwidth Product
IC= 0.3A ;VCE= 10V; ftest=1MHz
5
40
MHz
Output Capacitance
IE= 0; VCB= 10V; ftest=1kHz
125
500
pF
0.02
0.1
μs
0.3
0.7
μs
1.6
4.0
μs
0.3
0.7
μs
VBE(sat)
fT
COB
Switching times;Resistive Load
td
Delay Time
tr
Rise Time
ts
Storage Time
tf
Fall Time
isc Website:www.iscsemi.cn
IC= 10A , VCC= 250V; IB1=2A
VBE(off)= 5V; tp= 10μs;
Duty Cycle≤2.0%
2
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