ACPL-34JT Automotive 2.5 Amp Gate Drive Optocoupler with Integrated IGBT DESAT Overcurrent Sensing, Miller Current Clamping and UnderVoltage LockOut Feedback Data Sheet Lead (Pb) Free RoHS 6 fully compliant RoHS 6 fully compliant options available; -xxxE denotes a lead-free product Description Features Avago’s Automotive 2.5Amp Gate Drive Optocoupler features fast propagation delay with excellent timing skew performance. Smart features that are integrated to protect the IGBT include IGBT desaturation sensing with softshutdown protection and fault feedback, under voltage lockout and feedback and active Miller current clamping. This full featured and easy-to-implement IGBT gate drive optocoupler comes in a compact, surface-mountable SO-16 package for space-saving. It is suitable for traction power train inverter, power converter, battery charger, air-con and oil pump motor drives in HEV and EV applications and satisfies automotive AEC-Q100 semiconductor requirements. • • • • • • • Avago R2Coupler isolation products provide reinforced insulation and reliability that delivers safe signal isolation critical in automotive and high temperature industrial applications. - Desat sensing, “Soft” IGBT turn-off and Fault Feedback - Under Voltage Lock-Out protection (UVLO) with Feedback • >50 kV/μs Common Mode Rejection (CMR) at VCM = 1500 V • High Noise Immunity - Miller Current Clamping Functional Diagram VE - Direct LED input with low input impedance and low noise sensitivity VCC2 LED2+ UVLO UVLO VCC1 UVLO FAULT VEE1 VEE1 VEE1 AN CA Input Driver DESAT Over OutputDriverOver Output Current Current Driver SSD/ CLAMP Miller Control Figure 1. ACPL-34JT Functional Diagram VEE2 VEE2 • • • • - Negative Gate Bias SO-16 package with 8 mm clearance and creepage Regulatory approvals: UL1577, CSA IEC/EN/DIN EN 60747-5-5 Applications VO SS Control Qualified to AEC-Q100 Grade 1 Test Guidelines -40 °C to +125 °C operating temperature range 2.5 A maximum peak output current 1.9 A Miller Clamp Sinking Current Wide Operating Voltage: 15V to 25V Propagation delay: 280 ns (max.) Integrated fail-safe IGBT protection • • • • Automotive Isolated IGBT/MOSFET Inverter gate drive Automotive DC-DC Converter AC and brushless DC motor drives Industrial inverters for power supplies and motor controls • Uninterruptible Power Supplies CAUTION: It is advised that normal static precautions be taken in handling and assembly of this component to prevent damage and/or degradation which may be induced by ESD. Ordering Information RoHS Compliant Package Surface Mount ACPL-34JT -000E SO-16 X ACPL-34JT -500E Part Number Tape & Reel X IEC/EN/DIN EN 60747-5-5 X Quantity X 45 per tube X 850 per reel To order, choose a part number from the part number column and combine with the desired option from the option column to form an order entry. Example 1: ACPL-34JT-500E to order product of SO-16 Surface Mount package in Tape and Reel packaging with IEC/EN/DIN EN 60747-5-5 Safety Approval in RoHS compliant. Option datasheets are available. Contact your Avago sales representative or authorized distributor for information. Package Outline Drawings 16-Lead Surface Mount 0.018 (0.457) 16 15 14 13 12 11 10 9 0.050 (1.270) LAND PATTERN RECOMMENDATION TYPE NUMBER DATE CODE A 34JT YYWW EE 0.458 (11.63) 0.295 ± 0.010 (7.493 ± 0.254) 1 2 3 4 5 6 7 8 0.406 ± 0.010 (10.312 ± 0.254) EXTENDED DATECODE FOR LOT TRACKING 0.085 (2.16) 0.025 (0.64) 0.345 ± 0.010 (8.763 ± 0.254) 9° 0.018 (0.457) 0.138 ± 0.005 (3.505 ± 0.127) ALL LEADS TO BE COPLANAR ± 0.002 0–8° 0.025 MIN. 0.408 ± 0.010 (10.363 ± 0.254) Dimensions in inches (millimeters) Lead coplanarity = 0.1mm (0.004 inches) Floating lead protrusion = 0.25mm (10mils) max. Recommended Lead-free IR Profile Recommended reflow condition as per JEDEC Standard, J-STD-020 (latest revision). Non-halide flux should be used. 2 Product Overview Description The ACPL-34JT (shown in Figure 1) is a highly integrated power control device that incorporates all the necessary components for a complete, isolated IGBT gate drive circuit. It features IGBT desaturation sensing with soft-shutdown protection and fault feedback, under voltage lockout and feedback and active Miller current clamping in a SO-16 package. Direct LED input allows flexible logic configuration and differential current mode driving with low input impedance, greatly increased its noise immunity. Package Pin Out 1 VEE1 VEE2 16 2 VEE1 LED2+ 15 3 VCC1 DESAT 14 4 VEE1 VE 13 5 UVLO VCC2 12 6 FAULT 7 AN SSD/CLAMP 10 8 CA VEE2 9 VO 11 Figure 2. Pin out of ACPL-34JT Pin Description Pin Name Function Pin Name Function VEE1 Input common VEE2 Negative power supply VEE1 Input common LED2+ No connection, for testing only VCC1 Input power supply DESAT Desat Over current sensing VEE1 Input common VE IGBT Emitter Reference UVLO VCC2 under voltage lock out feedback VCC2 Positive power supply FAULT Over current fault feedback VO Driver output to IGBT gate AN Input LED anode SSD/CLAMP Soft Shutdown / Miller current clamping output CA Input LED cathode VEE2 Negative Power Supply 3 Typical Application/Operation Introduction to Fault Detection and Protection The power stage of a typical three phase inverter is susceptible to several types of failures, most of which are potentially destructive to the power IGBTs. These failure modes can be grouped into four basic categories: phase and/or rail supply short circuits due to user misconnect or bad wiring, control signal failures due to noise or computational errors, overload conditions induced by the load, and component failures in the gate drive circuitry. Under any of these fault conditions, the current through the IGBTs can increase rapidly, causing excessive power dissipation and heating. The IGBTs become damaged when the current load approaches the saturation current of the device, and the collector to emitter voltage rises above the saturation voltage level. The drastically increased power dissipation very quickly overheats the power device and destroys it. To prevent damage to the drive, fault protection must be implemented to reduce or turn-off the overcurrent during a fault condition. A circuit providing fast local fault detection and shutdown is an ideal solution, but the number of required components, board space consumed, cost, and complexity have until now limited its use to high performance drives. The features which this circuit must have are high speed, low cost, low resolution, low power dissipation, and small size. The ACPL-34JT satisfies these criteria by combining a high speed, high output current driver, high voltage optical isolation between the input and output, local IGBT desaturation detection and shut down, and optically isolated fault and UVLO status feedback signal into a single 16-pin surface mount package. The fault detection method, which is adopted in the ACPL-34JT, is to monitor the saturation (collector) voltage of the IGBT and to trigger a local fault shutdown sequence if the collector voltage exceeds a predetermined threshold. A small gate discharge device slowly reduces the high short circuit IGBT current to prevent damaging voltage spikes. Before the dissipated energy can reach destructive levels, the IGBT is shut off. During the off state of the IGBT, the fault detect circuitry is simply disabled to prevent false ‘fault’ signals. The alternative protection scheme of measuring IGBT current to prevent desaturation is effective if the short circuit capability of the power device is known, but this method will fail if the gate drive voltage decreases enough to only partially turn on the IGBT. By directly measuring the collector voltage, the ACPL-34JT limits the power dissipation in the IGBT even with insufficient gate drive voltage. Another more subtle advantage of the desaturation detection method is that power dissipation in the IGBT is monitored, while the current sense method relies on a preset current threshold to predict the safe limit of operation. Therefore, an overly- conservative overcurrent threshold is not needed to protect the IGBT. Recommended Application Circuit The ACPL-34JT has non-inverting gate control inputs, and an open collector fault and UVLO outputs suitable for wired ‘OR’ applications. The recommended application circuit shown in Figure 3 illustrates a typical gate drive implementation using the ACPL34JT. The two supply bypass capacitors (0.1 μF) provide the large transient currents necessary during a switching transition. The desat diode and 220pF blanking capacitor are the necessary external components for the fault detection circuitry. The gate resistor (10Ω) serves to limit gate charge current and indirectly control the IGBT collector voltage rise and fall times. The open collector fault and UVLO outputs have a passive 10kΩ pull-up resistor and a 330 pF filtering capacitor. 4 DESAT Fault Detection Blanking Time The DESAT fault detection circuitry must remain disabled for a short time period following the turn-on of the IGBT to allow the collector voltage to fall below the DESAT theshold. This time period, called the DESAT blanking time, is controlled by the internal DESAT charge current, the DESAT voltage threshold, and the external DESAT capacitor. The nominal blanking time is calculated in terms of external capacitance (CBLANK), FAULT threshold voltage (VDESAT ), and DESAT charge current (ICHG) in addition to an internal DESAT blanking time (tDESAT(BLANKING)). tBLANK = CBLANK x (VDESAT/ICHG) + tDESAT(BLANKING) VCC1 VCC2 + 5V 0.1uF 10kΩ 10kΩ uC 150Ω 330pF 330pF 150Ω VEE1 VEE2 VEE1 LED2+ VCC1 DESAT VEE1 VE UVLO VCC2 1kΩ 220pF 10uF 0.1uF VO FAULT AN SSD/CLAMP CA VEE2 ACPL-34JT 10Ω 10uF VEE2 Figure 3. Typical gate drive circuit with Desat current sensing using ACPL-34JT Description of Gate Driver and Miller Clamping The gate driver is directly controlled by the LED current. When LED current is driven high, the output of ACPL-34JT can deliver 2.5 A sourcing current to drive the IGBT’s gate. While LED is switched off, the gate driver can provide 2.5 A sinking current to switch the gate off fast. Additional Miller clamping pull-down transistor is activated when output voltage reaches about 2 V with respect to VEE2 to provide low impedance path to Miller current as shown in Figure 5. IF VO V GATE Figure 4. Gate Drive Signal Behavior 5 Description of UnderVoltage LockOut Insufficient gate voltage to IGBT can increase turn on resistance of IGBT, resulting in large power loss and IGBT damage due to high heat dissipation. ACPL-34JT monitors the output power supply constantly. When output power supply is lower than undervoltage lockout (UVLO) threshold gate driver output will shut off to protect IGBT from low voltage bias. During power up, the UVLO feature forces the gate driver output to low to prevent unwanted turn-on at lower voltage. V CC1 VCC2 V UVLO - V UVLO+ LED I F t UVLO_OFF VO t UVLO_ON FAULT UVLO t PHL_UVLO t PLH_UVLO Figure 5. Circuit Behaviors at Power up and Power down Description of Operation during Over Current Condition 1. DESAT terminal monitors IGBT’s VCE voltage. 2. When the voltage on the DESAT terminal exceeds 7 volts, the output voltage (VOUT ) to IGBT gate goes to Hi-Z state and the SSD/CLAMP output is slowly lowered. 3. FAULT output goes low, notifying the microcontroller of the fault condition. 4. Microcontroller takes appropriate action. 5. When tDESAT(MUTE) expires LED input need to be kept low for tDESAT(RESET) before fault condition is cleared. FAULT status will return to high and SSD/CLAMP output will return to Hi-Z state. 6. Output (VOUT ) starts to respond to LED input after fault condition is cleared. tDESAT(RESET) IF V O state Clamp State Hi-Z Clamp tDESAT(90%) V GATE VDESAT_TH V DESAT tDESAT(BLANKING) V FAULT tDESAT(MUTE) tDESAT(FAULT) Figure 6. Circuit Behaviors During Overcurrent Event 6 Hi-Z Clamp Hi-Z Clamp The ACPL-34JT is approved by the following organizations: UL CSA IEC/EN/DIN EN 60747-5-5 UL 1577, component recognition program up to VISO = 5000 VRMS expected prior to product release. CSA Component Acceptance Notice #5, File CA 88324. IEC 60747-5-5 EN 60747-5-5 DIN EN 60747-5-5 IEC/EN/DIN EN 60747-5-5 Insulation Characteristics Description Symbol Characteristic Insulation Classification per DIN VDE 0110/1.89, Table 1 for rated mains voltage ≤ 150Vrms for rated mains voltage ≤ 300Vrms for rated mains voltage ≤ 600Vrms for rated mains voltage ≤ 1000Vrms I – IV I – IV I – IV I – III Climatic Classification 40/125/21 Pollution Degree (DIN VDE 0110/1.89) Unit 2 Maximum Working Insulation Voltage VIORM 1230 VPEAK Input to Output Test Voltage, Method b VIORM x 1.875 = VPR, 100% Production Test with tm = 1sec, Partial discharge < 5 pC VPR 2306 VPEAK Input to Output Test Voltage, Method a VIORM x 1.6 = VPR, Type and Sample Test, tm = 10 sec, Partial Discharge < 5 pC VPR 1968 VPEAK Highest Allowable Overvoltage (Transient Overvoltage tini = 60 sec) VIOTM 8000 VPEAK Safety-limiting values – maximum values allowed in the event of a failure (also see Figure 7) Case Temperature Input Power Output Power TS PS,INPUT PS,OUTPUT 175 400 1200 °C mW mW Insulation Resistance at TS, VIO = 500V RS > 109 Ohm Notes: 1. Isolation characteristics are guaranteed only within the safety maximum ratings which must be ensured by protective circuits in application. Surface mount classification is class A in accordance with CECCOO802. 2. Refer to the optocoupler section of the Isolation and Control Components Designer’s Catalog, under Product Safety Regulation section IEC/EN/DIN EN 60747-5-5, for a detailed description of Method a and Method b partial discharge test profiles. 1400 PS, OUTPUT PS, INPUT PS – POWER – mW 1200 1000 800 600 400 200 0 0 25 50 75 100 125 150 TS – CASE TEMPERATURE – °C 175 Figure 7. Dependence of safety limiting values on temperature. 7 200 Insulation and Safety Related Specifications Parameter Symbol Value Units Conditions Minimum External Air Gap (Clearance) L(101) 8.3 mm Measured from input terminals to output terminals, shortest distance through air. Minimum External Tracking (Creepage) L(102) 8.3 mm Measured from input terminals to output terminals, shortest distance path along body. 0.5 mm Through insulation distance conductor to conductor, usually the straight line distance thickness between the emitter and detector. >175 Volts DIN IEC 112/VDE 0303 Part 1 Minimum Internal Plastic Gap (Internal Clearance) Tracking Resistance (Comparative Tracking Index) CTI Isolation Group IIIa Material Group (DIN VDE 0110) Parameter Symbol Min. Max. Units Storage Temperature TS -55 150 °C Operating Temperature TA -40 125 °C IC Junction Temperature TJ 150 °C Average Input Current IF(AVG) 20 mA Peak Transient Input Current (<1us pulse width, 300pps) IF(TRAN) 1 A Reverse Input Voltage VR 6 V Peak Output Current |IO(peak)| 2.5 A Fault Output Current (Sinking) IFAULT 10 mA Fault Pin Voltage VFAULT 6 V UVLO Output Current (Sinking) IUVLO 10 mA UVLO Pin Voltage VUVLO -0.5 6 V Positive Input Supply Voltage VCC1 -0.5 26 V Total Output Supply Voltage VCC2 - VEE2 -0.5 30 V Negative Output Supply Voltage VE - VEE2 -0.5 15 V Positive Output Supply Voltage VCC2 - VE -0.5 30 V Gate Drive Output Voltage Vo(peak) -0.5 VCC2 + 0.5 V Peak Clamping Sinking Current ICLAMP 2 A Miller Clamping Pin Voltage VCLAMP - VEE2 -0.5 VCC2 V DESAT Voltage VDESAT - VE VE – 0.5 VCC2 + 0.5 V 4 Output IC Power Dissipation PO 580 mW 1 Input IC Power Dissipation PI 150 mW Absolute Maximum Ratings -0.5 Note 1 2 3 2 Recommended Operating Conditions Parameter Symbol Min. Max. Units Operating Temperature TA -40 125 °C Input Supply Voltage VCC1 8 18 Volts 5 Total Output Supply Voltage VCC2 - VEE2 15 25 V 6 Negative Output Supply Voltage VE - VEE2 0 10 V 3 Positive Output Supply Voltage VCC2 - VE 15 25 V Input LED Current IF(ON) 10 16 mA Input Voltage (OFF) VF(OFF) -3.6 0.8 V Input pulse width tON(LED) 500 8 ns Notes Electrical Specifications Unless otherwise specified, all Minimum/Maximum specifications are at recommended operating conditions, all voltages at input IC are referenced to VEE1, all voltages at output IC referenced to VEE2. All typical values at TA = 25 °C, VCC1 = 12 V, VCC2-VEE2 = 20 V, VE-VEE2 = 0 V. Parameter Symbol Input Low Supply Current Typ. Max. Units Test Conditions Fig ICC1L 3.7 6.0 mA IF=0mA 8 Input High Supply Current ICC1H 3.7 6.0 mA IF=10mA 8 Output Low Supply Current ICC2L 10.5 13.2 mA IF=0mA 9 Output High Supply Current ICC2H 10.6 13.6 mA IF=10mA 9 LED Forward Voltage VF 1.25 1.55 1.85 V IF=10mA 10 LED Reverse Breakdown Voltage VBR 6 V IF =10mA Input Capacitance CIN 90 LED Turn on Current Threshold Low to High ITH+ 2.7 6.6 mA VO=5V LED Turn on Current Threshold High to Low ITH- 2.1 6.4 mA VO=5V LED Turn on Current Hysteresis ITH_HYS 0.6 mA High Level Output Current IOH -0.75 -2.0 A VOUT = VCC2 - 3 V 11 2 Low Level Output Current IOL 1.0 2.2 A VOUT = VEE2 + 2.5 V 12 2 Low Level Soft Shutdown Current During Fault Condition ISSD 22 35 mA VSSD - VEE2 = 14V 13 High Level Output Voltage VOH VCC2 – 0.5 VCC2 – 0.2 V IOUT = -100 mA 11,14 7, 8, 9 Low Level Output Voltage VOL 0.1 0.5 V IOUT = 100 mA 12,15 Clamp Threshold Voltage V TH_CLAMP 2.0 3.0 V Clamp Low Level Sinking Current ICLAMP 0.75 1.9 VCC2 UVLO Threshold Low to High VUVLO+ 11.0 12.4 VCC2 UVLO Threshold High to Low VUVLO- 10.1 11.3 VCC2 UVLO Hysteresis VUVLO_HYS Desat Sensing Threshold VDESAT 6.2 7.0 7.8 V Desat Charging Current ICHG 0.6 0.9 1.2 mA VOC = 2V 17 Desat Discharging Current IDSCHG 20 53 mA VOC = 7V 18 FAULT Logic Low Output Current IFAULT_L 4.0 9.0 mA VFAULT = 0.4V FAULT Logic High Output Current IFAULT_H uA VFAULT = 5V UVLO Logic Low Output Current IUVLO_L mA VUVLO = 0.4V UVLO Logic High Output Current IUVLO_H uA VUVLO = 5V 9 Min. pF 48 A VCLAMP = VEE2 + 2.5 13.7 V VOUT > 5 V 9, 10 12.8 V VOUT < 5 V 9, 11 1.1 V 20 4.0 Note 9.0 20 9 16 9 Switching Specifications Unless otherwise specified, all Minimum/Maximum specifications are at recommended operating conditions, all voltages at input IC are referenced to VEE1, all voltages at output IC referenced to VEE2. All typical values at TA = 25 °C, VCC1 = 12 V, VCC2-VEE2 = 20 V, VE-VEE2 = 0 V. Parameter Symbol Min Typ Max Units Test Conditions Fig Note VIN to High Level Output Propagation Delay Time tPLH 50 130 250 ns 19-21 12 VIN to Low Level Output Propagation Delay Time tPHL 50 150 280 ns Rg = 10 Ω Cg = 10 nF f = 10 kHz Duty Cycle = 50% 19-21 13 Pulse Width Distortion PWD 20 100 ns 14, 15 Propagation Delay Difference Between Any 2 Parts (tPHL-tPLH) PDD 20 150 ns 15, 16 10% to 90% Rise Time tR 60 90% to 10% Fall Time tF 50 Desat Blanking Time tDESAT(BLANKING) 0.6 Desat Sense to 90% VOUT Delay tDESAT(90%) 1.0 µs Desat Sense to 10% VOUT Delay tDESAT(10%) 2.0 µs 19 Desat to Desat Low Propagation Delay tDESAT(LOW) 0.3 µs 20 Desat to Low Level FAULT Signal Delay tDESAT(FAULT) µs 21 Output Mute Time due to Desat tDESAT(MUTE) 2.3 3.2 ms 22 Time Input Kept Low Before Fault Reset to High tDESAT(RESET) 2.3 3.2 ms 23 VCC2 to UVLO High Delay tPLH_UVLO 10 µs 24 VCC2 to UVLO Low Delay tPHL_UVLO 10 µs 25 VCC2 UVLO to VOUT High Delay tUVLO_ON 10 µs 26 VCC2 UVLO to VOUT Low Delay tUVLO_OFF 10 µs 27 Output High Level Common Mode Transient Immunity |CMH| 30 >50 kV/μs TA=25°C, IF=10mA, VCM =1500V, VCC1=12V 22, 24, 28 26 Output Low Level Common Mode Transient Immunity |CML| 30 >50 kV/μs TA = 25°C, IF=0mA, VCM=1500V, VCC1=12V 23, 25, 29 27 Parameter Symbol Min. Typ. Units Test Conditions Note Input-Output Momentary Withstand Voltage VISO 5000 VRMS RH < 50%, t = 1 min. TA = 25°C 30, 31, 32 Resistance (Input-Output) RI-O 1014 Ω VI-O = 500 Vdc 32 Capacitance (Input-Output) CI-O 1.3 pF f = 1 MHz Thermal coefficient between LED and input IC LED and output IC input IC and output IC LED and Ambient input IC and Ambient output IC and Ambient AEI AEO AIO AEA AIA AOA 35.4 33.1 25.6 176.1 92 76.7 °C/W °C/W °C/W °C/W °C/W °C/W ns ns 1.0 5 µs Rg=10 Ohm, Cg= 0 - 1nF 17 18 Package Characteristics 10 Max. Notes on Thermal Calculation Application and environmental design for ACPL-34JT needs to ensure that the junction temperature of the internal ICs and LED within the gate driver optocoupler do not exceed 150°C. The equations provided below are for the purposes of calculating the maximum power dissipation and corresponding effect on junction temperatures. LED Junction Temperature = AEA*PE + AEI*PI + AEO*PO + TA Input IC Junction Temperature = AEI*PE + AIA*PI + AIO*PO + TA Output IC Junction Temperature = AEO*PE + AIO*PI + AOA*PO + TA PE - LED Power Dissipation PI - Input IC Power Dissipation PO - Output IC Power Dissipation Calculation of LED Power Dissipation LED Power Dissipation, PE = IF(LED) (Recommended Max) * VF(LED) (125°C) * Duty Cycle Example: PE = 16mA * 1.25 * 50% duty cycle = 10mW Calculation of Input IC Power Dissipation Input IC Power Dissipation, PI = ICC1 (Max) * VCC1 (Recommended Max) Example: PI = 6mA * 18V = 108mW Calculation of Output IC Power Dissipation Output IC Power Dissipation, PO = VCC2 (Recommended Max) * ICC2 (Max) + PHS + PLS PHS - High Side Switching Power Dissipation PLS - Low Side Switching Power Dissipation PHS = (VCC2 * QG * fPWM) * ROH(MAX) / (ROH(MAX) + RGH) / 2 PLS = (VCC2 * QG * fPWM) * ROL(MAX) / (ROL(MAX) + RGL) / 2 QG – IGBT Gate Charge at Supply Voltage fPWM - LED Switching Frequency ROH(MAX) – Maximum High Side Output Impedance - VOH(MIN) / IOH(MIN) RGH - Gate Charging Resistance ROL(MAX) – Maximum Low Side Output Impedance - VOL(MIN) / IOL(MIN) RGL - Gate Discharging Resistance Example: ROH(MAX) = VOH(MIN) / IOH(MIN) = 2.5V / 0.75A = 3.33Ω ROL(MAX) = VOL(MIN) / IOL(MIN) = 2.5V / 1A = 2.5Ω PHS =(20V * 1uC * 10kHz) * 3.33Ω / (3.33Ω + 10Ω) / 2 = 24.98mW PLS =(20V * 1uC * 10kHz) * 2.5Ω / (2.5Ω + 10Ω) / 2 = 20mW PO = 20V * 13.6mA + 24.98mW + 20mW = 316.98mW Calculation of Junction Temperature LED Junction Temperature = 176.1°C/W *10mW + 35.4°C/W *108mW + 33.1*316.98mW + TA = 16.1°C + TA Input IC Junction Temperature = 35.4°C/W *10mW + 92°C/W *108mW + 25.6*316.98mW + TA = 18.4°C + TA Output IC Junction Temperature = 33.1°C/W *10mW + 25.6°C/W *108mW + 76.7*316.98mW + TA = 27.4°C + TA 11 Notes: 1. Output IC power dissipation is derated linearly above 100°C from 580mW to 260mW at 125°C. 2. Maximum pulse width = 1 μs, maximum duty cycle = 1%. 3. This supply is optional. Required only when negative gate drive is implemented. 4. Maximum 500ns pulse width if peak VDESAT > 10V 5. In most applications VCC1 will be powered up first (before VCC2) and powered down last (after VCC2). This is desirable for maintaining control of the IGBT gate. In applications where VCC2 is powered up first, it is important to ensure that input remains low until VCC1 reaches the proper operating voltage to avoid any momentary instability at the output during VCC1 ramp-up or ramp-down. 6. 15 V is the recommended minimum operating positive supply voltage (VCC2 - VE) to ensure adequate margin in excess of the maximum VUVLO+ threshold of 13.5 V. 7. For High Level Output Voltage testing, VOH is measured with a dc load current. When driving capacitive loads, VOH will approach VCC as IOH approaches zero. 8. Maximum pulse width = 1.0 ms, maximum duty cycle = 20%. 9. Once VOUT of the ACPL-34JT is allowed to go high (VCC2 - VE > VUVLO), the DESAT detection feature of the ACPL-34JT will be the primary source of IGBT protection. UVLO is needed to ensure DESAT is functional. Once VCC2 exceeds VUVLO+ threshold, DESAT will remain functional until VCC2 is below VUVLO- threshold. Thus, the DESAT detection and UVLO features of the ACPL-34JT work in conjunction to ensure constant IGBT protection. 10. This is the “increasing” (i.e. turn-on or “positive going” direction) of VCC2 - VE. 11. This is the “decreasing” (i.e. turn-off or “negative going” direction) of VCC2 - VE. 12. tPLH is defined as propagation delay from 50% of LED input IF to 50% of High level output. 13. tPHL is defined as propagation delay from 50% of LED input IF to 50% of Low level output. 14. Pulse Width Distortion (PWD) is defined as |tPHL – tPLH| of any given unit. 15. As measured from IF to VO. 16. The difference between tPHL and tPLH between any two ACPL-34JT parts under the same test conditions. 17. The delay time for ACPL-34JT to respond to a DESAT fault condition without any external DESAT capacitor. 18. The amount of time from when DESAT threshold is exceeded to 90% of VGATE at mentioned test conditions. 19. The amount of time from when DESAT threshold is exceeded to 10% of VGATE at mentioned test conditions. 20. The amount of time from when DESAT threshold is exceeded to DESAT Low voltage, 0.7 V. 21. The amount of time from when DESAT threshold is exceeded to FAULT output Low – 50% of VCC1 voltage. 22. The amount of time when DESAT threshold is exceeded, Output is mute to LED input. 23. The amount of time when DESAT Mute time is expired, LED input must be kept Low for Fault status to return to High. 24. The delay time when VCC2 exceeds UVLO+ threshold to UVLO High – 50% of UVLO positive going edge. 25. The delay time when VCC2 falls below UVLO- threshold to UVLO Low – 50% of UVLO negative going edge. 26. The delay time when VCC2 exceeds UVLO+ threshold to 50% of High level output. 27. The delay time when VCC2 falls below UVLO- threshold to 50% of Low level output. 28. Common mode transient immunity in the high state is the maximum tolerable dVCM/dt of the common mode pulse, VCM, to assure that the output will remain in the high state (i.e., VO > 15 V or FAULT > 2 V or UVLO > 2V). A 330 pF and a 10 kΩ pull-up resistor is needed in fault and UVLO detection mode. 29. Common mode transient immunity in the low state is the maximum tolerable dVCM/dt of the common mode pulse, VCM, to assure that the output will remain in a low state (i.e., VO < 1.0 V or FAULT < 0.8 V or UVLO < 0.8 V). A 330 pF and a 10 kΩ pull-up resistor is needed in fault and UVLO detection mode. 30. In accordance with UL1577, each optocoupler is proof tested by applying an insulation test voltage ≥6000 VRMS for 1 second. 31. The Input-Output Momentary Withstand Voltage is a dielectric voltage rating that should not be interpreted as an input-output continuous voltage rating. For the continuous voltage rating refer to your equipment level safety specification or IEC/EN/DIN EN 60747-5-5 Insulation Characteristics Table 32. Device considered a two terminal device: pins 1 - 8 shorted together and pins 9 - 16 shorted together. 12 12 ICC2 - INPUT SUPPLY CURRENT - mA ICC1 - INPUT SUPPLY CURRENT - mA 4.2 4.1 4 3.9 3.8 3.7 3.6 3.5 3.4 3.3 3.2 -40 ICCL1 ICCH1 -20 0 20 40 60 80 TA - TEMPERATURE - °C 100 120 VOH - OUTPUT HIGH VOLTAGE - V IF - FORWARD CURRENT - mA 10.00 1.00 0.10 1.2 2.5 -40 -20 0 20 40 60 80 TA - TEMPERATURE - °C 100 1.3 1.4 1.5 VF - FORWARD VOLTAGE - V 1.6 1.5 0.5 0 Figure 12. VOL vs IOL 0.5 1 1.5 2 IOL - OUTPUT LOW CURRENT - A 19 18.5 18 17.5 17 0 0.5 1 1.5 IOH - OUTPUT HIGH CURRENT - A 2 2.5 45 1 0 140 Figure 11. VOH vs IOH -40°C 25°C 125°C 2 120 -40°C 25°C 125°C 19.5 ISSD - SOFT SHUTDOWN CURRENT DURING FAULT CONDITION - mA VOL - OUTPUT LOW VOLTAGE - V 9.5 20 Figure 10. Typical Diode Input Forward Current Characteristic 13 10 Figure 9. ICC2 across temperature Ta = 25°C -0.5 10.5 9 100.00 0.01 11 140 Figure 8. ICC1 across temperature ICCL2 ICCH2 11.5 2.5 40 35 30 25 20 15 -40°C 25°C 125°C 10 5 0 0 Figure 13. ISSD vs VSSD 5 10 15 20 VSSD - SOFT SHUTDOWN VOLTAGE - V 25 VOL - LOW OUTPUT VOLTAGE - V (VOH-VCC) - HIGH OUTPUT VOLTAGE DROP - V 0 -0.05 -0.1 -0.15 -0.2 -0.25 -0.3 -0.35 -0.4 -0.45 -0.5 -40 -20 0 20 40 60 80 TA - TEMPERATURE - °C 100 120 140 Figure 14. VOH across temperature ICHG - DESAT CHARGING CURRENT - mA VDESAT - DESAT THRESHOLD - V 7 6.8 6.6 6.4 6.2 -20 0 20 40 60 80 TA - TEMPERATURE - °C 100 120 PROPAGATION DELAY - ns IDSCHG - DESAT DISCHARGING CURRENT - mA 60 50 40 30 20 10 -20 0 20 40 60 80 TA - TEMPERATURE - °C Figure 18. IDCHG across temperature 14 100 120 140 100 120 140 -0.8 -0.85 -0.9 -0.95 -40 -20 0 20 40 60 80 TA - TEMPERATURE - °C Figure 17. ICHG across temperature 70 -40 20 40 60 80 TA - TEMPERATURE - °C -0.75 -1 140 Figure 16. VDESAT Threshold across temperature 0 0 -0.7 7.2 -40 -20 Figure 15. VOL across temperature 7.4 6 0.5 0.45 0.4 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0 -40 100 120 140 200 180 160 140 120 100 80 60 40 20 0 -40 Tplh_2010 Tphl_2010 -20 0 20 40 60 80 TA - TEMPERATURE - °C Figure 19. tP across temperature 100 120 140 180 160 160 140 140 PROPAGATION DELAY - ns PROPAGATION DELAY - ns 180 120 100 80 60 40 TPLH TPHL 20 0 15 17 19 21 VCC - SUPPLY VOLTAGE - V 23 + 5V _ 150R 100 80 60 40 TPLH TPHL 20 0 25 0 10 20 30 LOAD RESISTANCE - Ω VEE1 VEE2 VEE1 LED2+ VCC1 DESAT VEE1 VE UVLO VCC2 FAULT VO _ + 0.1µF AN SSD/CLAMP CA VEE2 20 V Scope 150R 10R 10nF 150R VEE1 VEE2 VEE1 LED2+ VCC1 DESAT VEE1 VE UVLO VCC2 FAULT VO AN SSD/CLAMP CA VEE2 - + + 0.1 F 10k Scope 330 pF 5V + _ 150R VEE2 VEE1 LED2+ VCC1 DESAT VEE1 VE UVLO VCC2 FAULT VO AN SSD/CLAMP CA VEE2 150R + High Voltage Pulse VCM = 1500 V Figure 24. CMR Fault High Test Circuit 15 + 0.1µF 20 V Scope 10R 10nF Figure 23. CMR Vo Low Test Circuit VEE1 - _ High Voltage Pulse VCM = 1500 V Figure 22. CMR Vo High Test Circuit 12V 50 - + High Voltage Pulse VCM = 1500 V _ 40 Figure 21. tP vs Load Resistance Figure 20. tP vs Supply Voltage 150R 120 0.1 F _ + 12V _ + 0.1 F 20 V 10k Scope 330 pF 10R 10 nF 5V + _ 150R VEE1 VEE2 VEE1 LED2+ VCC1 DESAT VEE1 VE UVLO VCC2 FAULT VO AN SSD/CLAMP CA VEE2 150R - + High Voltage Pulse VCM = 1500 V Figure 25. CMR Fault Low Test Circuit _ 0.1 F + 10R 10nF 20V _ 12 V + 0.1 F 10k Scope 330 pF 5V + _ 150R 150R VEE1 VEE2 VEE1 LED2+ VCC1 DESAT VEE1 VE UVLO VCC2 FAULT VO AN SSD/CLAMP CA VEE2 - _ _ 0.1 F + 12 V 20 V + 0.1 F 10k Scope 330 pF 10R 10 nF 5V + _ 150R 150R VEE1 LED2+ VCC1 DESAT VEE1 VE UVLO VCC2 FAULT VO AN SSD/CLAMP CA VEE2 + High Voltage Pulse VCM = 1500 V High Voltage Pulse VCM = 1500 V For product information and a complete list of distributors, please go to our web site: VEE2 - + Figure 26. CMR UVLO High Test Circuit VEE1 Figure 27. CMR UVLO Low Test Circuit www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries. Data subject to change. Copyright © 2005-2013 Avago Technologies. All rights reserved. AV02-3831EN - November 18, 2013 10R 10 nF