Renesas BCR16LM-14LB Triac medium power use Datasheet

Preliminary Datasheet
BCR16LM-14LB
Triac
R07DS0060EJ0100
Rev.1.00
Jul 27, 2010
Medium Power Use
Features




 The Product guaranteed maximum junction
temperature 150C
 Insulated Type
 Planar Type
 UL Recognized : File No. E223904
IT (RMS) : 16 A
VDRM : 800 V
IFGTI, IRGTI, IRGT III : 30 mA
Viso : 1800V
Outline
RENESAS Package code: PRSS0003AF-A)
(Package name: TO-220FL)
2
3
1. T1 Terminal
2. T2 Terminal
3. Gate Terminal
1
1
2 3
Applications
Washing machine, inversion operation of capacitor motor, and other general controlling devices.
Maximum Ratings
Parameter
Symbol
Repetitive peak off-state voltage Note1
VDRM
Non-repetitive peak off-state voltage Note1
VDSM
Voltage class
14
800
700
840
Unit
Condition
V
V
V
Tj = 125C
Tj = 150C
Notes: 1. Gate open.
R07DS0060EJ0100 Rev.1.00
Jul 27, 2010
Page 1 of 7
BCR16LM-14LB
Preliminary
Parameter
RMS on-state current
Symbol
IT (RMS)
Ratings
16
Unit
A
Surge on-state current
ITSM
160
A
I2 t
106.5
A2s
PGM
PG (AV)
VGM
IGM
Tj
Tstg
—
Viso
5
0.5
10
2
–40 to +150
–40 to +150
1.5
1800
W
W
V
A
C
C
g
V
I2t for fusion
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction Temperature
Storage temperature
Mass
Isolation voltage
Conditions
Commercial frequency, sine full wave
360°conduction, Tc = 87C
60 Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 60 Hz, surge on-state current
Typical value
Ta = 25C, AC 1 minute,
T1  T2  G terminal to case
Notes: 1. Gate open.
Electrical Characteristics
Parameter
Repetitive peak off-state current
Symbol
IDRM
Min.
—
Typ.
—
Max.
5.0
Unit
mA
VTM
—
—
1.5
V
Tc = 25C, ITM = 25 A,
instantaneous measurement
On-state voltage
Test conditions
Tj = 150C, VDRM applied
Gate trigger voltageNote2



VFGT
VRGT
VRGT
—
—
—
—
—
—
1.5
1.5
1.5
V
V
V
Tj = 25C, VD = 6 V, RL = 6 ,
RG = 330 
Gate trigger curentNote2



IFGT
IRGT
IRGT
—
—
—
—
—
—
30
30
30
mA
mA
mA
Tj = 25C, VD = 6 V, RL = 6 ,
RG = 330 
VGD
Rth (j-c)
0.2/0.1
—
—
—
—
3.5
V
C/W
Tj = 125C/150C, VD = 1/2 VDRM
Junction to caseNote3
(dv/dt)c
10/1
—
—
V/s
Tj = 125C/150C
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
Note4
commutation voltage
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5C/W.
4. Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below.
Test conditions
1. Junction temperature
Tj = 125C/150C
2. Rate of decay of on-state commutating current
(di/dt)c = –8.0 A/ms
3. Peak off-state voltage
VD = 400 V
R07DS0060EJ0100 Rev.1.00
Jul 27, 2010
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
Main Current
(di/dt)c
Time
Main Voltage
(dv/dt)c
Time
VD
Page 2 of 7
BCR16LM-14LB
Preliminary
Performance Curves
Maximum On-State Characteristics
Rated Surge On-State Current
Surge On-State Current (A)
200
102
Tj = 150°C
101
Tj = 25°C
100
0.5
1.0
1.5
2.5
3.0
3.5
160
140
120
100
80
60
40
20
0
100
4.0
2 3 4 5 7 101
2 3 4 5 7 102
Gate Characteristics (I, II and III)
Gate Trigger Current vs.
Junction Temperature
101
7
5
3 VGT = 1.5V
2
PG(AV) = 0.5W
PGM = 5W
IGM = 2A
100
7
5
3
2
Gate Trigger Current (Tj = t°C)
× 100 (%)
Gate Trigger Current (Tj = 25°C)
Conduction Time (Cycles at 60Hz)
10–1
7 IFGT I, IRGT I, IRGT III
VGD = 0.1V
5
1
2
10 2 3 5 7 10 2 3 5 7 103 2 3 5 7 104
Gate Trigger Voltage (Tj = t°C)
× 100 (%)
Gate Trigger Voltage (Tj = 25°C)
180
On-State Voltage (V)
3
2 VGM = 10V
Gate Voltage (V)
2.0
103
7
5
4
3
2
Typical Example
IRGT III
102
7
5
4
3
2
IFGT I, IRGT I
101
–60 –40 –20 0 20 40 60 80 100 120 140 160
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage vs.
Junction Temperature
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
103
7
5
4
3
2
Typical Example
102
7
5
4
3
2
101
–60 –40 –20 0 20 40 60 80 100 120 140 160
Junction Temperature (°C)
R07DS0060EJ0100 Rev.1.00
Jul 27, 2010
Transient Thermal Impedance (°C/W)
On-State Current (A)
103
102
4.0
103
104
100
101
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10–1
102
Conduction Time (Cycles at 60Hz)
Page 3 of 7
BCR16LM-14LB
Preliminary
103
7
5
3
2
Maximum On-State Power Dissipation
40
No Fins
On-State Power Dissipation (W)
Transient Thermal Impedance (°C/W)
Maximum Transient Thermal Impedance
Characteristics (Junction to ambient)
102
7
5
3
2
101
7
5
3
2
100
7
5
3
2
10–1
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 2 3 5 7 105
25
20
15
10
5
0
4
6
8 10 12 14 16 18 20
Allowable Case Temperature vs.
RMS On-State Current
Allowable Ambient Temperature vs.
RMS On-State Current
160
120
100
80
60
40
360° Conduction
Resistive,
inductive loads
20
0
2
4
6
Ambient Temperature (°C)
Curves apply regardless
of conduction angle
8 10 12 14 16 18 20
140
All fins are black painted
aluminum and greased
120
100
80
120 120 t2.3
100 100 t2.3
60 60 t2.3
60 Curves apply
regardless of
40 conduction angle
Resistive,
20 inductive loads
Natural convection
0
0 2 4 6 8 10 12 14 16 18 20
RMS On-State Current (A)
RMS On-State Current (A)
Allowable Ambient Temperature vs.
RMS On-State Current
Repetitive Peak Off-State Current vs.
Junction Temperature
160
Natural convection
No Fins
Curves apply regardless
of conduction angle
Resistive, inductive loads
140
120
100
80
60
40
20
0
2
RMS On-State Current (A)
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
RMS On-State Current (A)
R07DS0060EJ0100 Rev.1.00
Jul 27, 2010
Repetitive Peak Off-State Current (Tj = t°C)
× 100 (%)
Repetitive Peak Off-State Current (Tj = 25°C)
Case Temperature (°C)
360° Conduction
Resistive,
inductive loads
Conduction Time (Cycles at 60Hz)
140
Ambient Temperature (°C)
30
0
160
0
35
5
3 Typical Example
2
105
7
5
3
2
104
7
5
3
2
103
7
5
3
2
102
–60 –40 –20 0 20 40 60 80 100 120 140160
Junction Temperature (°C)
Page 4 of 7
BCR16LM-14LB
Preliminary
103
7
5
4
3
2
Latching Current vs.
Junction Temperature
Latching Current (mA)
Typical Example
102
7
5
4
3
2
101
–60 –40 –20 0 20 40 60 80 100 120 140 160
103
7
5
3
2
Distribution
T2+, G–
Typical Example
102
7
5
3
2
101
7
5
3
2
T2+, G+
Typical Example
T2–, G–
100
–40
0
40
80
120
160
Junction Temperature (°C)
Breakover Voltage vs.
Junction Temperature
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=125°C)
160
Typical Example
140
120
100
80
60
40
20
0
–60 –40 –20 0 20 40 60 80 100 120 140 160
Breakover Voltage (dv/dt = xV/μs)
× 100 (%)
Breakover Voltage (dv/dt = 1V/μs)
Junction Temperature (°C)
160
Typical Example
Tj = 125°C
140
120
100
80
III Quadrant
60
40
I Quadrant
20
0
101
102
103
104
Junction Temperature (°C)
Rate of Rise of Off-State Voltage (V/μs)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=150°C)
Commutation Characteristics (Tj=125°C)
160
Typical Example
Tj = 150°C
140
Critical Rate of Rise of Off-State
Commutating Voltage (V/μs)
Breakover Voltage (dv/dt = xV/μs)
× 100 (%)
Breakover Voltage (dv/dt = 1V/μs)
Breakover Voltage (Tj = t°C)
× 100 (%)
Breakover Voltage (Tj = 25°C)
Holding Current (Tj = t°C)
× 100 (%)
Holding Current (Tj = 25°C)
Holding Current vs.
Junction Temperature
120
100
80
III Quadrant
60
40
I Quadrant
20
0
101
102
103
104
Rate of Rise of Off-State Voltage (V/μs)
R07DS0060EJ0100 Rev.1.00
Jul 27, 2010
102
7
5
3
2
Time
Main Voltage
Typical Example
(dv/dt)c
VD Tj = 125°C
Main Current
(di/dt)c IT = 4A
IT
τ = 500μs
τ
Time
VD = 200V
f = 3Hz
101
7 Minimum
5 Characteristics
Value
I Quadrant
3
2
100
7
III Quadrant
3
5 7 101
2 3
5 7 102
2 3
Rate of Decay of On-State
Commutating Current (A/ms)
Page 5 of 7
BCR16LM-14LB
Preliminary
Gate Trigger Current vs.
Gate Current Pulse Width
102
7 Typical Example Main Voltage
(dv/dt)c
5 Tj = 150°C
Main Current
IT = 4A
IT
3 τ = 500μs
τ
2 VD = 200V
f = 3Hz
101
7
I Quadrant
5
Gate Trigger Current (tw)
× 100 (%)
Gate Trigger Current (DC)
Critical Rate of Rise of Off-State
Commutating Voltage (V/μs)
Commutation Characteristics (Tj=150°C)
Time
VD
(di/dt)c
Time
III Quadrant
3
2
100
7
Minimum
Characteristics
Value
3
5 7 101
2 3
5 7 102
2 3
Rate of Decay of On-State
Commutating Current (A/ms)
Typical Example
IFGT I
IRGT I
IRGT III
102
7
5
4
3
2
101 0
10
2 3 4 5 7 101
2 3 4 5 7 102
Gate Current Pulse Width (μs)
Gate Trigger Characteristics Test Circuits
6Ω
103
7
5
4
3
2
6Ω
Recommended Circuit Values Around The Triac
Load
C1
A
6V
V
R1
A
6V
330Ω
V
330Ω
Test Procedure II
Test Procedure I
C0
R0
C1 = 0.1 to 0.47μF C0 = 0.1μF
R1 = 47 to 100Ω
R0 = 100Ω
6Ω
A
6V
V
330Ω
Test Procedure III
R07DS0060EJ0100 Rev.1.00
Jul 27, 2010
Page 6 of 7
BCR16LM-14LB
Preliminary
Package Dimensions
Package Name
TO-220FL
JEITA Package Code
⎯
Previous Code
TO-220FL
RENESAS Code
PRSS0003AF-A
Unit: mm
6.5 ± 0.3
3.0 ± 0.3
2.8 ± 0.2
φ 3.2 ± 0.2
3.6 ± 0.3
12.5 ± 0.5
15.0 ± 0.3
10.0 ± 0.3
MASS[Typ.]
1.5g
1.15 ± 0.2
1.15 ± 0.2
0.75 ± 0.15
0.40 ± 0.15
4.5 ± 0.2
2.54 ± 0.25
2.6 ± 0.2
2.54 ± 0.25
Order Code
Lead form
Straight type
Lead form
Standard packing
Plastic Magazine (Tube)
Plastic Magazine (Tube)
Quantity
50
50
Standard order code
Type name
Type name – Lead forming code
Standard order
code example
BCR16LM-14LB
BCR16LM-14LB-A8
Note : Please confirm the specification about the shipping in detail.
R07DS0060EJ0100 Rev.1.00
Jul 27, 2010
Page 7 of 7
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