DMN66D0LDW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET V(BR)DSS RDS(ON) 60V 6Ω @ VGS = 5V 5Ω @ VGS = 10V Features and Benefits ID TA = +25°C 90mA 115mA Package SOT363 Description This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • • Dual N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Small Surface Mount Package • ESD Protected Gate, 1KV (HBM) • Lead-Free Finish; RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Applications • Load Switch • Case: SOT363 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020 • Terminals: Matte Tin Finish annealed over Alloy 42 leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 e3 • Terminal Connections: See Diagram • Weight: 0.006 grams (approximate) SOT363 ESD PROTECTED TO 1kV D2 G1 S1 S2 G2 D1 Top View Internal Schematic Top View Ordering Information (Note 4) Part Number DMN66D0LDW-7 Notes: Case SOT363 Packaging 3,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information YM Month Code Jan 1 MN1 Date Code Key Year 2007 Code U YM 2008 V Feb 2 DMN66D0LDW Document number: DS31232 Rev. 6 - 2 2009 W Mar 3 MN1= Product Type Marking Code YM = Date Code Marking for SAT (Shanghai Assembly/ Test site) YM = Date Code Marking for CAT (Chengdu Assembly/ Test site) Y or Y = Year (ex: A = 2013) M = Month (ex: 9 = September) YM MN1 YM MN1 MN1 NEW PRODUCT Product Summary 2010 X Apr 4 2011 Y May 5 2012 Z Jun 6 1 of 5 www.diodes.com 2013 A Jul 7 Aug 8 2014 B Sep 9 2015 C Oct O 2016 D Nov N 2017 E Dec D February 2014 © Diodes Incorporated DMN66D0LDW Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Units VDSS 60 V VGSS ±20 V ID 115 73 800 mA Drain-Source Voltage NEW PRODUCT Gate-Source Voltage (Note 5) Continuous Drain Current (Note 5) Continuous Continuous @ +100°C Pulsed Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Total Power Dissipation Derating above TA = +25°C (Note 5) Symbol Value Units PD 250 1.6 mW mW/°C Thermal Resistance, Junction to Ambient RθJA 500 °C/W TJ, TSTG -55 to +150 °C Operating and Storage Temperature Range Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit BVDSS 60 Test Condition 70 ⎯ V VGS = 0V, ID = 10µA µA VDS = 60V, VGS = 0V OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage IDSS ⎯ ⎯ 1.0 500 IGSS ⎯ ⎯ ±5 μA VGS = ±20V, VDS = 0V VGS(th) 1.2 ⎯ 2.0 V VDS = VGS, ID = 250μA RDS (ON) ⎯ 3.5 3.0 6 5 Ω Forward Transconductance gFS 80 VSD ⎯ mS VDS = 10V, ID = 0.115 Diode Forward Voltage VSD ⎯ 0.8 1.2 V VGS = 0V, IS = 115mA Input Capacitance Ciss ⎯ 23 ⎯ pF Output Capacitance Coss ⎯ 3.4 ⎯ pF Reverse Transfer Capacitance Crss ⎯ 1.4 ⎯ pF Turn-On Delay Time tD(ON) ⎯ 10 ⎯ ns Turn-Off Delay Time tD(OFF) ⎯ 33 ⎯ ns Zero Gate Voltage Drain Current @ TC = +25°C @ TC = +125°C Gate-Body Leakage ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Static Drain-Source On-Resistance @ TJ = +25°C @ TJ = +125°C VGS = 5.0V, ID = 0.115A VGS = 10V, ID = 0.115A DYNAMIC CHARACTERISTICS VDS = 25V, VGS = 0V, f = 1.0MHz SWITCHING CHARACTERISTICS Notes: VDD = 30V, ID = 0.115A, RL = 150Ω, VGEN = 10V, RGEN = 25Ω 5. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com. 6. Short duration pulse test used to minimize self-heating effect. DMN66D0LDW Document number: DS31232 Rev. 6 - 2 2 of 5 www.diodes.com February 2014 © Diodes Incorporated DMN66D0LDW 0.6 1 VDS = 5V Pulsed ID, DRAIN CURRENT (A) 0.5 NEW PRODUCT 0.4 0.3 0.2 0.1 TA = 150°C 0.1 T A = 85°C TA = 25°C T A = -55°C 0 0.01 1 9 2.5 2 3 4 VGS, GATE SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics 5 RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω) 8 2.0 7 6 1.5 5 1.0 VGS = 5V 4 3 VGS = 10V 0.5 2 1 0 0 0.1 0.2 0.3 0.4 0.5 0.6 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 On-Resistance vs. Drain Current & Gate Voltage 100 1.9 1.8 ID = 250µA CT, CAPACITANCE (pF) VGS(TH), GATE THRESHOLD VOLTAGE (V) 2.0 1.7 1.6 1.5 1.4 1.3 Ciss 10 Coss 1.2 1.1 1.0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 5 Gate Threshold Variation vs. Ambient Temperature DMN66D0LDW Document number: DS31232 Rev. 6 - 2 3 of 5 www.diodes.com 1 Crss 0 5 10 15 20 25 30 35 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 6 Typical Total Capacitance 40 February 2014 © Diodes Incorporated DMN66D0LDW IS, SOURCE CURRENT (A) NEW PRODUCT 1 0.1 TA = 150°C T A = 125°C 0.01 TA = 85°C 0.001 TA = 25°C TA = -55°C 0.0001 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 7 Reverse Drain Current vs. Source-Drain Voltage Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. A B C H K M J D F L SOT363 Dim Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Typ F 0.40 0.45 H 1.80 2.20 J 0 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.22 0° 8° α All Dimensions in mm Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. C2 Z C2 Dimensions Value (in mm) Z 2.5 G 1.3 X 0.42 Y 0.6 C1 1.9 C2 0.65 C1 G Y X DMN66D0LDW Document number: DS31232 Rev. 6 - 2 4 of 5 www.diodes.com February 2014 © Diodes Incorporated DMN66D0LDW IMPORTANT NOTICE NEW PRODUCT DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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