Cypress CY7C1429KV18 36-mbit ddr ii sio sram 2-word burst architecture Datasheet

CY7C1422KV18, CY7C1429KV18
CY7C1423KV18, CY7C1424KV18
36-Mbit DDR II SIO SRAM 2-Word
Burst Architecture
36-Mbit DDR II SIO SRAM 2-Word Burst Architecture
Features
Configurations
■
36 Mbit density (4 M × 8, 4 M × 9, 2 M × 18, 1 M × 36)
CY7C1422KV18 – 4 M × 8
■
333 MHz clock for high bandwidth
CY7C1429KV18 – 4 M × 9
■
2-word burst for reducing address bus frequency
CY7C1423KV18 – 2 M × 18
■
Double data rate (DDR) interfaces
(data transferred at 666 MHz) at 333 MHz
■
Two input clocks (K and K) for precise DDR timing
❐ SRAM uses rising edges only
■
Two input clocks for output data (C and C) to minimize clock
skew and flight time mismatches
■
Echo clocks (CQ and CQ) simplify data capture in high speed
systems
■
Synchronous internally self timed writes
■
DDR II operates with 1.5 cycle read latency when DOFF is
asserted HIGH
■
Operates similar to DDR I device with 1 cycle read latency when
DOFF is asserted LOW
■
1.8 V core power supply with HSTL inputs and outputs
■
Variable drive HSTL output buffers
■
Expanded HSTL output voltage (1.4 V to VDD)
❐ Supports both 1.5 V and 1.8 V IO supply
■
Available in 165-ball FBGA package (13 × 15 × 1.4 mm)
■
Offered in both Pb-free and non Pb-free packages
■
JTAG 1149.1 compatible test access port
■
Phase locked loop (PLL) for accurate data placement
CY7C1424KV18 – 1 M × 36
Functional Description
The CY7C1422KV18, CY7C1429KV18, CY7C1423KV18, and
CY7C1424KV18 are 1.8 V synchronous pipelined SRAMs,
equipped with DDR II SIO (double data rate separate I/O)
architecture. The DDR II SIO consists of two separate ports: the
read port and the write port to access the memory array. The
read port has data outputs to support read operations and the
write port has data inputs to support write operations. The DDR II
SIO has separate data inputs and data outputs to completely
eliminate the need to “turnaround” the data bus required with
common I/O devices. Access to each port is accomplished
through a common address bus. Addresses for read and write
are latched on alternate rising edges of the input (K) clock. Write
data is registered on the rising edges of both K and K. Read data
is driven on the rising edges of C and C if provided, or on the
rising edge of K and K if C/C are not provided. Each address
location is associated with two 8-bit words in the case of
CY7C1422KV18, two 9-bit words in the case of
CY7C1429KV18, two 18-bit words in the case of
CY7C1423KV18, and two 36-bit words in the case of
CY7C1424KV18 that burst sequentially into or out of the device.
Asynchronous inputs include an output impedance matching
input (ZQ). Synchronous data outputs are tightly matched to the
two output echo clocks CQ/CQ, eliminating the need to capture
data separately from each individual DDR II SIO SRAM in the
system design. Output data clocks (C/C) enable maximum
system clocking and data synchronization flexibility.
All synchronous inputs pass through input registers controlled by
the K or K input clocks. All data outputs pass through output
registers controlled by the C or C (or K or K in a single clock
domain) input clocks. Writes are conducted with on-chip
synchronous self-timed write circuitry.
Selection Guide
Description
333 MHz
300 MHz
250 MHz
200 MHz
167 MHz
Unit
333
300
250
200
167
MHz
×8
480
450
420
370
340
mA
×9
480
450
420
370
340
× 18
490
460
430
380
340
× 36
600
560
490
430
380
Maximum operating frequency
Maximum operating current
Cypress Semiconductor Corporation
Document Number: 001-57829 Rev. *B
•
198 Champion Court
•
San Jose, CA 95134-1709
•
408-943-2600
Revised February 28, 2011
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CY7C1422KV18, CY7C1429KV18
CY7C1423KV18, CY7C1424KV18
Logic Block Diagram (CY7C1422KV18)
K
K
CLK
Gen.
DOFF
LD
LD
Control
Logic
R/W
C
Read Data Reg.
16
R/W
VREF
Read Add. Decode
Address
Register
Write
Data Reg
2M x 8 Array
21
Write
Data Reg
2M x 8 Array
A(20:0)
8
Write Add. Decode
D[7:0]
Control
Logic
C
CQ
8
8
Reg.
Reg. 8
Reg.
8
NWS[1:0]
CQ
8
Q[7:0]
Logic Block Diagram (CY7C1429KV18)
K
K
CLK
Gen.
DOFF
LD
LD
Control
Logic
R/W
C
Read Data Reg.
18
R/W
VREF
Read Add. Decode
Address
Register
Write
Data Reg
2M x 9 Array
21
Write
Data Reg
2M x 9 Array
A(20:0)
9
Write Add. Decode
D[8:0]
Control
Logic
BWS[0]
Document Number: 001-57829 Rev. *B
C
CQ
9
9
Reg.
Reg. 9
Reg.
9
CQ
9
Q[8:0]
Page 2 of 32
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CY7C1422KV18, CY7C1429KV18
CY7C1423KV18, CY7C1424KV18
Logic Block Diagram (CY7C1423KV18)
K
K
CLK
Gen.
DOFF
LD
LD
Control
Logic
R/W
C
Read Data Reg.
C
CQ
36
R/W
VREF
Read Add. Decode
Address
Register
Write
Data Reg
1M x 18 Array
20
Write
Data Reg
1M x 18 Array
A(19:0)
18
Write Add. Decode
D[17:0]
18
Control
Logic
18
Reg.
Reg. 18
Reg.
18
BWS[1:0]
CQ
18
Q[17:0]
Logic Block Diagram (CY7C1424KV18)
K
K
CLK
Gen.
DOFF
LD
LD
Control
Logic
R/W
C
Read Data Reg.
C
CQ
72
R/W
VREF
Read Add. Decode
Address
Register
Write
Data Reg
512K x 18 Array
19
Write
Data Reg
512K x 18 Array
A(18:0)
36
Write Add. Decode
D[35:0]
36
Control
Logic
BWS[3:0]
Document Number: 001-57829 Rev. *B
36
Reg.
Reg. 36
Reg.
36
CQ
36
Q[35:0]
Page 3 of 32
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CY7C1422KV18, CY7C1429KV18
CY7C1423KV18, CY7C1424KV18
Contents
Pin Configuration ............................................................. 5
165-ball FBGA (13 × 15 × 1.4 mm) pinout .................. 5
Pin Definitions .................................................................. 7
Functional Overview ........................................................ 9
Read Operations ......................................................... 9
Write Operations ......................................................... 9
Byte Write Operations ................................................. 9
Single Clock Mode ...................................................... 9
DDR Operation ............................................................ 9
Depth Expansion ......................................................... 9
Programmable Impedance .......................................... 9
Echo Clocks .............................................................. 10
PLL ............................................................................ 10
Application Example ...................................................... 10
Truth Table ...................................................................... 11
Write Cycle Descriptions ............................................... 11
Write Cycle Descriptions ............................................... 12
Write Cycle Descriptions ............................................... 12
IEEE 1149.1 Serial Boundary Scan (JTAG) .................. 13
Disabling the JTAG Feature ...................................... 13
Test Access Port—Test Clock ................................... 13
Test Mode Select (TMS) ........................................... 13
Test Data-In (TDI) ..................................................... 13
Test Data-Out (TDO) ................................................. 13
Performing a TAP Reset ........................................... 13
TAP Registers ........................................................... 13
TAP Instruction Set ................................................... 13
TAP Controller State Diagram ....................................... 15
TAP Controller Block Diagram ...................................... 16
TAP Electrical Characteristics ...................................... 16
Document Number: 001-57829 Rev. *B
TAP AC Switching Characteristics ............................... 17
TAP Timing and Test Conditions .................................. 17
Identification Register Definitions ................................ 18
Scan Register Sizes ....................................................... 18
Instruction Codes ........................................................... 18
Boundary Scan Order .................................................... 19
Power Up Sequence in DDR II SRAM ........................... 20
Power Up Sequence ................................................. 20
PLL Constraints ......................................................... 20
Maximum Ratings ........................................................... 21
Operating Range ............................................................. 21
Neutron Soft Error Immunity ......................................... 21
Electrical Characteristics ............................................... 21
DC Electrical Characteristics ..................................... 21
AC Electrical Characteristics ..................................... 23
Capacitance .................................................................... 24
Thermal Resistance ........................................................ 24
Switching Characteristics .............................................. 25
Switching Waveforms .................................................... 27
Ordering Information ...................................................... 28
Ordering Code Definitions ......................................... 28
Package Diagram ............................................................ 29
Acronyms ....................................................................... 30
Document Conventions ................................................. 30
Units of Measure ....................................................... 30
Document History Page ................................................. 31
Sales, Solutions, and Legal Information ...................... 32
Worldwide Sales and Design Support ....................... 32
Products .................................................................... 32
PSoC Solutions ......................................................... 32
Page 4 of 32
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CY7C1422KV18, CY7C1429KV18
CY7C1423KV18, CY7C1424KV18
Pin Configuration
The pin configurations for CY7C1422KV18, CY7C1429KV18, CY7C1423KV18, and CY7C1424KV18 follow. [1]
165-ball FBGA (13 × 15 × 1.4 mm) pinout
CY7C1422KV18 (4 M × 8)
1
2
3
4
5
6
7
8
9
10
11
A
CQ
NC/72M
A
R/W
NWS1
K
NC/144M
LD
A
A
CQ
B
NC
NC
NC
A
NC/288M
K
NWS0
A
NC
NC
Q3
C
NC
NC
NC
VSS
A
A
A
VSS
NC
NC
D3
D
NC
D4
NC
VSS
VSS
VSS
VSS
VSS
NC
NC
NC
E
NC
NC
Q4
VDDQ
VSS
VSS
VSS
VDDQ
NC
D2
Q2
F
NC
NC
NC
VDDQ
VDD
VSS
VDD
VDDQ
NC
NC
NC
G
NC
D5
Q5
VDDQ
VDD
VSS
VDD
VDDQ
NC
NC
NC
H
DOFF
VREF
VDDQ
VDDQ
VDD
VSS
VDD
VDDQ
VDDQ
VREF
ZQ
J
NC
NC
NC
VDDQ
VDD
VSS
VDD
VDDQ
NC
Q1
D1
K
NC
NC
NC
VDDQ
VDD
VSS
VDD
VDDQ
NC
NC
NC
L
NC
Q6
D6
VDDQ
VSS
VSS
VSS
VDDQ
NC
NC
Q0
M
NC
NC
NC
VSS
VSS
VSS
VSS
VSS
NC
NC
D0
N
NC
D7
NC
VSS
A
A
A
VSS
NC
NC
NC
P
NC
NC
Q7
A
A
C
A
A
NC
NC
NC
R
TDO
TCK
A
A
A
C
A
A
A
TMS
TDI
CY7C1429KV18 (4 M × 9)
1
2
3
4
5
6
7
8
9
10
11
A
CQ
NC/72M
A
R/W
NC
K
NC/144M
LD
A
A
CQ
B
NC
NC
NC
A
NC/288M
K
BWS0
A
NC
NC
Q4
C
NC
NC
NC
VSS
A
A
A
VSS
NC
NC
D4
D
NC
D5
NC
VSS
VSS
VSS
VSS
VSS
NC
NC
NC
E
NC
NC
Q5
VDDQ
VSS
VSS
VSS
VDDQ
NC
D3
Q3
F
NC
NC
NC
VDDQ
VDD
VSS
VDD
VDDQ
NC
NC
NC
G
NC
D6
Q6
VDDQ
VDD
VSS
VDD
VDDQ
NC
NC
NC
H
DOFF
VREF
VDDQ
VDDQ
VDD
VSS
VDD
VDDQ
VDDQ
VREF
ZQ
J
NC
NC
NC
VDDQ
VDD
VSS
VDD
VDDQ
NC
Q2
D2
K
NC
NC
NC
VDDQ
VDD
VSS
VDD
VDDQ
NC
NC
NC
L
NC
Q7
D7
VDDQ
VSS
VSS
VSS
VDDQ
NC
NC
Q1
M
NC
NC
NC
VSS
VSS
VSS
VSS
VSS
NC
NC
D1
N
NC
D8
NC
VSS
A
A
A
VSS
NC
NC
NC
P
NC
NC
Q8
A
A
C
A
A
NC
D0
Q0
R
TDO
TCK
A
A
A
C
A
A
A
TMS
TDI
Note
1. NC/72M, NC/144M, and NC/288M are not connected to the die and can be tied to any voltage level.
Document Number: 001-57829 Rev. *B
Page 5 of 32
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CY7C1422KV18, CY7C1429KV18
CY7C1423KV18, CY7C1424KV18
Pin Configuration
(continued)
The pin configurations for CY7C1422KV18, CY7C1429KV18, CY7C1423KV18, and CY7C1424KV18 follow. [1]
165-ball FBGA (13 × 15 × 1.4 mm) pinout
CY7C1423KV18 (4 M × 18)
1
2
3
4
5
6
7
8
9
10
11
A
CQ
NC/144M
A
R/W
BWS1
K
NC/288M
LD
A
NC/72M
CQ
B
NC
Q9
D9
A
NC
K
BWS0
A
NC
NC
Q8
C
NC
NC
D10
VSS
A
A
A
VSS
NC
Q7
D8
D
NC
D11
Q10
VSS
VSS
VSS
VSS
VSS
NC
NC
D7
E
NC
NC
Q11
VDDQ
VSS
VSS
VSS
VDDQ
NC
D6
Q6
F
NC
Q12
D12
VDDQ
VDD
VSS
VDD
VDDQ
NC
NC
Q5
G
NC
D13
Q13
VDDQ
VDD
VSS
VDD
VDDQ
NC
NC
D5
H
DOFF
VREF
VDDQ
VDDQ
VDD
VSS
VDD
VDDQ
VDDQ
VREF
ZQ
J
NC
NC
D14
VDDQ
VDD
VSS
VDD
VDDQ
NC
Q4
D4
K
NC
NC
Q14
VDDQ
VDD
VSS
VDD
VDDQ
NC
D3
Q3
L
NC
Q15
D15
VDDQ
VSS
VSS
VSS
VDDQ
NC
NC
Q2
M
NC
NC
D16
VSS
VSS
VSS
VSS
VSS
NC
Q1
D2
N
NC
D17
Q16
VSS
A
A
A
VSS
NC
NC
D1
P
NC
NC
Q17
A
A
C
A
A
NC
D0
Q0
R
TDO
TCK
A
A
A
C
A
A
A
TMS
TDI
CY7C1424KV18 (2 M × 36)
1
2
3
NC/288M NC/72M
4
5
6
7
8
9
10
11
R/W
BWS2
K
BWS1
LD
A
NC/144M
CQ
A
CQ
B
Q27
Q18
D18
A
BWS3
K
BWS0
A
D17
Q17
Q8
C
D27
Q28
D19
VSS
A
A
A
VSS
D16
Q7
D8
D
D28
D20
Q19
VSS
VSS
VSS
VSS
VSS
Q16
D15
D7
E
Q29
D29
Q20
VDDQ
VSS
VSS
VSS
VDDQ
Q15
D6
Q6
F
Q30
Q21
D21
VDDQ
VDD
VSS
VDD
VDDQ
D14
Q14
Q5
G
D30
D22
Q22
VDDQ
VDD
VSS
VDD
VDDQ
Q13
D13
D5
H
DOFF
VREF
VDDQ
VDDQ
VDD
VSS
VDD
VDDQ
VDDQ
VREF
ZQ
J
D31
Q31
D23
VDDQ
VDD
VSS
VDD
VDDQ
D12
Q4
D4
K
Q32
D32
Q23
VDDQ
VDD
VSS
VDD
VDDQ
Q12
D3
Q3
L
Q33
Q24
D24
VDDQ
VSS
VSS
VSS
VDDQ
D11
Q11
Q2
M
D33
Q34
D25
VSS
VSS
VSS
VSS
VSS
D10
Q1
D2
N
D34
D26
Q25
VSS
A
A
A
VSS
Q10
D9
D1
P
Q35
D35
Q26
A
A
C
A
A
Q9
D0
Q0
R
TDO
TCK
A
A
A
C
A
A
A
TMS
TDI
Document Number: 001-57829 Rev. *B
Page 6 of 32
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CY7C1422KV18, CY7C1429KV18
CY7C1423KV18, CY7C1424KV18
Pin Definitions
Pin Name
I/O
Pin Description
D[x:0]
InputData input signals. Sampled on the rising edge of K and K clocks during valid write operations.
synchronous CY7C1422KV18 - D[7:0]
CY7C1429KV18 - D[8:0]
CY7C1423KV18 - D[17:0]
CY7C1424KV18 - D[35:0]
LD
InputSynchronous load. This input is brought LOW when a bus cycle sequence is defined. This definition
synchronous includes address and read/write direction. All transactions operate on a burst of 2 data (one clock period
of bus activity).
NWS0,
NWS1
Nibble write select 0, 1  active LOW (CY7C1422KV18 only). Sampled on the rising edge of the K and
K clocks during Write operations. Used to select which nibble is written into the device during the current
portion of the Write operations. Nibbles not written remain unaltered.
NWS0 controls D[3:0] and NWS1 controls D[7:4].
All nibble write selects are sampled on the same edge as the data. Deselecting a nibble write select
ignores the corresponding nibble of data and it is not written into the device.
BWS0,
BWS1,
BWS2,
BWS3
InputByte write select 0, 1, 2, and 3  active LOW. Sampled on the rising edge of the K and K clocks during
synchronous write operations. Used to select which byte is written into the device during the current portion of the write
operations. Bytes not written remain unaltered.
CY7C1429KV18 BWS0 controls D[8:0]
CY7C1423KV18 BWS0 controls D[8:0], BWS1 controls D[17:9].
CY7C1424KV18BWS0 controls D[8:0], BWS1 controls D[17:9],BWS2 controls D[26:18] and BWS3 controls
D[35:27].
All the byte write selects are sampled on the same edge as the data. Deselecting a byte write select
ignores the corresponding byte of data and it is not written into the device.
A
InputAddress inputs. Sampled on the rising edge of the K clock during active read and write operations. These
synchronous address inputs are multiplexed for both read and write operations. Internally, the device is organized as
4 M × 8 (2 arrays each of 2 M × 8) for CY7C1422KV18, 4 M × 9 (2 arrays each of 2 M × 9) for
CY7C1429KV18, 2 M × 18 (2 arrays each of 1 M × 18) for CY7C1423KV18 and 1 M × 36 (2 arrays each
of 512 K × 36) for CY7C1424KV18. Therefore, only 21 address inputs are needed to access the entire
memory array of CY7C1422KV18 and CY7C1429KV18, 20 address inputs for CY7C1423KV18 and 19
address inputs for CY7C1424KV18. These inputs are ignored when the appropriate port is deselected.
Q[x:0]
OutputsData output signals. These pins drive out the requested data during a read operation. Valid data is driven
synchronous out on the rising edge of both the C and C clocks during read operations, or K and K when in single clock
mode. When the read port is deselected, Q[x:0] are automatically tristated.
CY7C1422KV18  Q[7:0]
CY7C1429KV18  Q[8:0]
CY7C1423KV18  Q[17:0]
CY7C1424KV18  Q[35:0]
R/W
InputSynchronous read/write input. When LD is LOW, this input designates the access type (read when
synchronous R/W is HIGH, write when R/W is LOW) for the loaded address. R/W must meet the setup and hold times
around the edge of K.
C
Input clock
Positive input clock for output data. C is used in conjunction with C to clock out the read data from the
device. C and C can be used together to deskew the flight times of various devices on the board back to
the controller. See Application Example on page 10 for further details.
C
Input clock
Negative input clock for output data. C is used in conjunction with C to clock out the read data from
the device. C and C can be used together to deskew the flight times of various devices on the board back
to the controller. See Application Example on page 10 for further details.
K
Input clock
Positive input clock input. The rising edge of K is used to capture synchronous inputs to the device and
to drive out data through Q[x:0] when in single clock mode. All accesses are initiated on the rising edge of K.
K
Input clock
Negative input clock input. K is used to capture synchronous inputs being presented to the device and
to drive out data through Q[x:0] when in single clock mode.
Document Number: 001-57829 Rev. *B
Page 7 of 32
[+] Feedback
CY7C1422KV18, CY7C1429KV18
CY7C1423KV18, CY7C1424KV18
Pin Definitions
Pin Name
(continued)
I/O
Pin Description
CQ
Echo clock
CQ referenced with respect to C. This is a free running clock and is synchronized to the input clock for
output data (C) of the DDR II. In the single clock mode, CQ is generated with respect to K. The timings
for the echo clocks is shown in the Switching Characteristics on page 25.
CQ
Echo clock
CQ referenced with respect to C. This is a free running clock and is synchronized to the input clock for
output data (C) of the DDR II. In the single clock mode, CQ is generated with respect to K. The timings
for the echo clocks is shown in the Switching Characteristics on page 25.
ZQ
Input
Output impedance matching input. This input is used to tune the device outputs to the system data
bus impedance. CQ, CQ, and Q[x:0] output impedance are set to 0.2 × RQ, where RQ is a resistor
connected between ZQ and ground. Alternatively, this pin can be connected directly to VDDQ, which
enables the minimum impedance mode. This pin cannot be connected directly to GND or left
unconnected.
DOFF
Input
PLL turn off  active LOW. Connecting this pin to ground turns off the PLL inside the device. The timing
in the PLL turned off operation differs from those listed in this data sheet. For normal operation, this pin
is connected to a pull-up through a 10 Kohm or less pull-up resistor. The device behaves in DDR I mode
when the PLL is turned off. In this mode, the device can be operated at a frequency of up to 167 MHz
with DDR I timing.
TDO
Output
TCK
Input
TCK pin for JTAG.
TDI
Input
TDI pin for JTAG.
TMS
Input
TMS pin for JTAG.
NC
N/A
Not connected to the die. Can be tied to any voltage level.
NC/72M
N/A
Not connected to the die. Can be tied to any voltage level.
NC/144M
N/A
Not connected to the die. Can be tied to any voltage level.
NC/288M
N/A
Not connected to the die. Can be tied to any voltage level.
VREF
VDD
VSS
VDDQ
Inputreference
TDO for JTAG.
Reference voltage input. Static input used to set the reference level for HSTL inputs, outputs, and AC
measurement points.
Power supply Power supply inputs to the core of the device.
Ground
Ground for the device.
Power supply Power supply inputs for the outputs of the device.
Document Number: 001-57829 Rev. *B
Page 8 of 32
[+] Feedback
CY7C1422KV18, CY7C1429KV18
CY7C1423KV18, CY7C1424KV18
Functional Overview
The CY7C1422KV18, CY7C1429KV18, CY7C1423KV18, and
CY7C1424KV18 are synchronous pipelined burst SRAMs
equipped with a DDR II separate I/O interface, which operates
with a read latency of one and half cycles when DOFF pin is tied
HIGH. When DOFF pin is set LOW or connected to VSS the
device behaves in DDR I mode with a read latency of one clock
cycle.
Accesses are initiated on the rising edge of the positive input
clock (K). All synchronous input timing is referenced from the
rising edge of the input clocks (K and K) and all output timing is
referenced to the rising edge of the output clocks (C/C, or K/K
when in single clock mode).
All synchronous data inputs (D[x:0]) pass through input registers
controlled by the rising edge of the input clocks (K and K). All
synchronous data outputs (Q[x:0]) pass through output registers
controlled by the rising edge of the output clocks (C/C, or K/K
when in single-clock mode).
All synchronous control (R/W, LD, BWS[0:X]) inputs pass through
input registers controlled by the rising edge of the input clock (K).
CY7C1423KV18 is described in the following sections. The
same basic descriptions apply to CY7C1422KV18,
CY7C1429KV18, and CY7C1424KV18.
Read Operations
The CY7C1423KV18 is organized internally as two arrays of
1 M x 18. Accesses are completed in a burst of two sequential
18-bit data words. Read operations are initiated by asserting
R/W HIGH and LD LOW at the rising edge of the positive input
clock (K). The address presented to address inputs is stored in
the read address register. Following the next K clock rise the
corresponding lowest order 18-bit word of data is driven onto the
Q[17:0] using C as the output timing reference. On the
subsequent rising edge of C, the next 18-bit data word is driven
onto the Q[17:0]. The requested data is valid 0.45 ns from the
rising edge of the output clock (C or C, or K and K when in single
clock mode, for 200 MHz and 250 MHz device). Read accesses
can be initiated on every rising edge of the positive input clock
(K). This pipelines the data flow such that data is transferred out
of the device on every rising edge of the output clocks, C/C (or
K/K when in single clock mode).
The CY7C1423KV18 first completes the pending read
transactions, when read access is deselected. Synchronous
internal circuitry automatically tristates the output following the
next rising edge of the positive output clock (C).
Write Operations
Write operations are initiated by asserting R/W LOW and LD
LOW at the rising edge of the positive input clock (K). The
address presented to address inputs is stored in the write
address register. On the following K clock rise the data presented
to D[17:0] is latched and stored into the 18-bit write data register,
provided BWS[1:0] are both asserted active. On the subsequent
rising edge of the negative input clock (K) the information
presented to D[17:0] is also stored into the write data register,
provided BWS[1:0] are both asserted active. The 36 bits of data
Document Number: 001-57829 Rev. *B
are then written into the memory array at the specified location.
Write accesses can be initiated on every rising edge of the
positive input clock (K). This pipelines the data flow such that
18 bits of data can be transferred into the device on every rising
edge of the input clocks (K and K).
When write access is deselected, the device ignores all inputs
after the pending write operations are completed.
Byte Write Operations
Byte write operations are supported by the CY7C1423KV18. A
write operation is initiated as described in the Write Operations
section. The bytes that are written are determined by BWS0 and
BWS1, which are sampled with each set of 18-bit data words.
Asserting the appropriate byte write select input during the data
portion of a write latches the data being presented and writes it
into the device. Deasserting the byte write select input during the
data portion of a write enables the data stored in the device for
that byte to remain unaltered. This feature is used to simplify
read, modify, and write operations to a byte write operation.
Single Clock Mode
The CY7C1423KV18 is used with a single clock that controls
both the input and output registers. In this mode the device
recognizes only a single pair of input clocks (K and K) that control
both the input and output registers. This operation is identical to
the operation if the device had zero skew between the K/K and
C/C clocks. All timing parameters remain the same in this mode.
To use this mode of operation, tie C and C HIGH at power on.
This function is a strap option and not alterable during device
operation.
DDR Operation
The CY7C1423KV18 enables high performance operation
through high clock frequencies (achieved through pipelining) and
double data rate mode of operation.
If a read occurs after a write cycle, address and data for the write
are stored in registers. The write information must be stored
because the SRAM cannot perform the last word write to the
array without conflicting with the read. The data stays in this
register until the next write cycle occurs. On the first write cycle
after the read(s), the stored data from the earlier write is written
into the SRAM array. This is called a posted write.
Depth Expansion
Depth expansion requires replicating the LD control signal for
each bank. All other control signals can be common between
banks as appropriate.
Programmable Impedance
An external resistor, RQ, must be connected between the ZQ pin
on the SRAM and VSS to enable the SRAM to adjust its output
driver impedance. The value of RQ must be 5 × the value of the
intended line impedance driven by the SRAM. The allowable
range of RQ to guarantee impedance matching with a tolerance
of ±15% is between 175  and 350 , with VDDQ = 1.5 V. The
output impedance is adjusted every 1024 cycles at power up to
account for drifts in supply voltage and temperature.
Page 9 of 32
[+] Feedback
CY7C1422KV18, CY7C1429KV18
CY7C1423KV18, CY7C1424KV18
Echo Clocks
PLL
Echo clocks are provided on the DDR II to simplify data capture
on high speed systems. Two echo clocks are generated by the
DDR II. CQ is referenced with respect to C and CQ is referenced
with respect to C. These are free running clocks and are
synchronized to the output clock of the DDR II. In the single clock
mode, CQ is generated with respect to K and CQ is generated
with respect to K. The timing for the echo clocks is shown in
Switching Characteristics on page 25.
These chips use a phase locked loop (PLL) that is designed to
function between 120 MHz and the specified maximum clock
frequency. During power-up, when the DOFF is tied HIGH, the
PLL is locked after 20 s of stable clock. The PLL can also be
reset by slowing or stopping the input clocks K and K for a
minimum of 30 ns. However, it is not necessary to reset the PLL
to lock it to the desired frequency. The PLL automatically locks
20 s after a stable clock is presented. The PLL may be disabled
by applying ground to the DOFF pin. When the PLL is turned off,
the device behaves in DDR I mode (with one cycle latency and
a longer access time).
Application Example
Figure 1 shows four DDR II SIO used in an application.
Figure 1. Application Example
SRAM 1
Vt
D
R
BUS
MASTER
(CPU
or
ASIC)
A
B
WB
S
LD
R/W W
LDR/W
## ## ##
DATA IN
DATA OUT
Address
LD#
R/W#
BWS#
ZQ
Q
CQ
CQ#
C C# K K#
SRAM 4
R = 250Ohms
B
W
LD R/W S
#
# #
D
A
R
ZQ
Q
CQ
CQ#
C C# K K#
R = 250Ohms
Vt
Vt
SRAM 1 Input CQ
SRAM 1 Input CQ#
SRAM 4 Input CQ
SRAM 4 Input CQ#
Source K
Source K#
Delayed K
Delayed K#
R
R = 50Ohms
Document Number: 001-57829 Rev. *B
Vt = VREF
Page 10 of 32
[+] Feedback
CY7C1422KV18, CY7C1429KV18
CY7C1423KV18, CY7C1424KV18
Truth Table
The truth table for CY7C1422KV18, CY7C1429KV18, CY7C1423KV18, and CY7C1424KV18 follows.[2, 3, 4, 5, 6, 7]
Operation
K
LD
R/W
Write cycle:
Load address; wait one cycle;
input write data on consecutive K and K rising edges.
L–H
L
L
D(A + 0) at K(t + 1) D(A + 1) at K(t + 1)
Read cycle:
Load address; wait one and a half cycle;
read data on consecutive C and C rising edges.
L–H
L
H
Q(A + 0) at C(t + 1) Q(A + 1) at C(t + 2)
NOP: No operation
L–H
H
X
High Z
High Z
Stopped
X
X
Previous state
Previous state
Standby: Clock stopped
DQ
DQ
Write Cycle Descriptions
The write cycle description table for CY7C1422KV18 and CY7C1423KV18 follows.[2, 8]
BWS0/ BWS1/
K
K
L
L–H
–
L
L
–
L
H
L–H
L
H
–
H
L
L–H
H
L
–
H
H
L–H
H
H
–
NWS0
NWS1
L
Comments
During the data portion of a write sequence
CY7C1422KV18 both nibbles (D[7:0]) are written into the device.
CY7C1423KV18 both bytes (D[17:0]) are written into the device.
L–H During the data portion of a write sequence
CY7C1422KV18 both nibbles (D[7:0]) are written into the device.
CY7C1423KV18 both bytes (D[17:0]) are written into the device.
–
During the data portion of a write sequence
CY7C1422KV18 only the lower nibble (D[3:0]) is written into the device, D[7:4] remains unaltered.
CY7C1423KV18 only the lower byte (D[8:0]) is written into the device, D[17:9] remains unaltered.
L–H During the data portion of a write sequence
CY7C1422KV18 only the lower nibble (D[3:0]) is written into the device, D[7:4] remains unaltered.
CY7C1423KV18 only the lower byte (D[8:0]) is written into the device, D[17:9] remains unaltered.
–
During the data portion of a write sequence
CY7C1422KV18 only the upper nibble (D[7:4]) is written into the device, D[3:0] remains unaltered.
CY7C1423KV18 only the upper byte (D[17:9]) is written into the device, D[8:0] remains unaltered.
L–H During the data portion of a write sequence
CY7C1422KV18 only the upper nibble (D[7:4]) is written into the device, D[3:0] remains unaltered.
CY7C1423KV18 only the upper byte (D[17:9]) is written into the device, D[8:0] remains unaltered.
–
No data is written into the devices during this portion of a write operation.
L–H No data is written into the devices during this portion of a write operation.
Notes
2. X = “Don't Care,” H = Logic HIGH, L = Logic LOW, represents rising edge.
3. Device powers up deselected with the outputs in a tristate condition.
4. “A” represents address location latched by the devices when transaction was initiated. A + 0, A + 1 represents the internal address sequence in the burst.
5. “t” represents the cycle at which a read/write operation is started. t + 1, and t + 2 are the first, and second clock cycles respectively succeeding the “t” clock cycle.
6. Data inputs are registered at K and K rising edges. Data outputs are delivered on C and C rising edges, except when in single clock mode.
7. Ensure that when the clock is stopped K = K and C = C = HIGH. This is not essential, but permits most rapid restart by overcoming transmission line charging
symmetrically.
8. Is based on a write cycle that was initiated in accordance with the Write Cycle Descriptions table. NWS0, NWS1, BWS0, BWS1, BWS2,and BWS3 can be altered on
different portions of a write cycle, as long as the setup and hold requirements are achieved.
Document Number: 001-57829 Rev. *B
Page 11 of 32
[+] Feedback
CY7C1422KV18, CY7C1429KV18
CY7C1423KV18, CY7C1424KV18
Write Cycle Descriptions
The write cycle description table for CY7C1429KV18 follows. [9, 10]
BWS0
K
K
Comments
L
L–H
–
During the data portion of a write sequence, the single byte (D[8:0]) is written into the device.
L
–
L–H
During the data portion of a write sequence, the single byte (D[8:0]) is written into the device.
H
L–H
–
No data is written into the device during this portion of a write operation.
H
–
L–H
No data is written into the device during this portion of a write operation.
Write Cycle Descriptions
The write cycle description table for CY7C1424KV18 follows. [9, 10]
BWS0
BWS1
BWS2
BWS3
K
K
Comments
L
L
L
L
L–H
–
During the data portion of a write sequence, all four bytes (D[35:0]) are written into
the device.
L
L
L
L
–
L
H
H
H
L–H
L
H
H
H
–
H
L
H
H
L–H
H
L
H
H
–
H
H
L
H
L–H
H
H
L
H
–
H
H
H
L
L–H
H
H
H
L
–
H
H
H
H
L–H
H
H
H
H
–
L–H During the data portion of a write sequence, all four bytes (D[35:0]) are written into
the device.
–
During the data portion of a write sequence, only the lower byte (D[8:0]) is written
into the device. D[35:9] remains unaltered.
L–H During the data portion of a write sequence, only the lower byte (D[8:0]) is written
into the device. D[35:9] remains unaltered.
–
During the data portion of a write sequence, only the byte (D[17:9]) is written into
the device. D[8:0] and D[35:18] remains unaltered.
L–H During the data portion of a write sequence, only the byte (D[17:9]) is written into
the device. D[8:0] and D[35:18] remains unaltered.
–
During the data portion of a write sequence, only the byte (D[26:18]) is written into
the device. D[17:0] and D[35:27] remains unaltered.
L–H During the data portion of a write sequence, only the byte (D[26:18]) is written into
the device. D[17:0] and D[35:27] remains unaltered.
–
During the data portion of a write sequence, only the byte (D[35:27]) is written into
the device. D[26:0] remains unaltered.
L–H During the data portion of a write sequence, only the byte (D[35:27]) is written into
the device. D[26:0] remains unaltered.
–
No data is written into the device during this portion of a write operation.
L–H No data is written into the device during this portion of a write operation.
Notes
9. X = “Don't Care,” H = Logic HIGH, L = Logic LOW, represents rising edge.
10. Is based on a write cycle that was initiated in accordance with the Write Cycle Descriptions table. NWS0, NWS1, BWS0, BWS1, BWS2,and BWS3 can be altered on
different portions of a write cycle, as long as the setup and hold requirements are achieved.
Document Number: 001-57829 Rev. *B
Page 12 of 32
[+] Feedback
CY7C1422KV18, CY7C1429KV18
CY7C1423KV18, CY7C1424KV18
IEEE 1149.1 Serial Boundary Scan (JTAG)
These SRAMs incorporate a serial boundary scan test access
port (TAP) in the FBGA package. This part is fully compliant with
IEEE Standard #1149.1-2001. The TAP operates using JEDEC
standard 1.8 V IO logic levels.
Disabling the JTAG Feature
It is possible to operate the SRAM without using the JTAG
feature. To disable the TAP controller, TCK must be tied LOW
(VSS) to prevent clocking of the device. TDI and TMS are
internally pulled up and may be unconnected. They may
alternatively be connected to VDD through a pull-up resistor. TDO
must be left unconnected. Upon power-up, the device comes up
in a reset state, which does not interfere with the operation of the
device.
Test Access Port—Test Clock
The test clock is used only with the TAP controller. All inputs are
captured on the rising edge of TCK. All outputs are driven from
the falling edge of TCK.
Test Mode Select (TMS)
The TMS input is used to give commands to the TAP controller
and is sampled on the rising edge of TCK. This pin may be left
unconnected if the TAP is not used. The pin is pulled up
internally, resulting in a logic HIGH level.
Test Data-In (TDI)
The TDI pin is used to serially input information into the registers
and can be connected to the input of any of the registers. The
register between TDI and TDO is chosen by the instruction that
is loaded into the TAP instruction register. For information about
loading the instruction register, see the TAP Controller State
Diagram on page 15. TDI is internally pulled up and can be
unconnected if the TAP is unused in an application. TDI is
connected to the most significant bit (MSB) on any register.
Test Data-Out (TDO)
The TDO output pin is used to serially clock data out from the
registers. The output is active, depending upon the current state
of the TAP state machine (see Instruction Codes on page 18).
The output changes on the falling edge of TCK. TDO is
connected to the least significant bit (LSB) of any register.
Performing a TAP Reset
A reset is performed by forcing TMS HIGH (VDD) for five rising
edges of TCK. This reset does not affect the operation of the
SRAM and is performed when the SRAM is operating. At
power-up, the TAP is reset internally to ensure that TDO comes
up in a high Z state.
TAP Registers
Registers are connected between the TDI and TDO pins to scan
the data in and out of the SRAM test circuitry. Only one register
can be selected at a time through the instruction registers. Data
is serially loaded into the TDI pin on the rising edge of TCK. Data
is output on the TDO pin on the falling edge of TCK.
Document Number: 001-57829 Rev. *B
Instruction Register
Three-bit instructions are serially loaded into the instruction
register. This register is loaded when it is placed between the TDI
and TDO pins, as shown in TAP Controller Block Diagram on
page 16. Upon power-up, the instruction register is loaded with
the IDCODE instruction. It is also loaded with the IDCODE
instruction if the controller is placed in a reset state, as described
in the previous section.
When the TAP controller is in the Capture-IR state, the two least
significant bits are loaded with a binary “01” pattern to enable
fault isolation of the board level serial test path.
Bypass Register
To save time when serially shifting data through registers, it is
sometimes advantageous to skip certain chips. The bypass
register is a single-bit register that can be placed between TDI
and TDO pins. This enables shifting of data through the SRAM
with minimal delay. The bypass register is set LOW (VSS) when
the BYPASS instruction is executed.
Boundary Scan Register
The boundary scan register is connected to all of the input and
output pins on the SRAM. Several No Connect (NC) pins are also
included in the scan register to reserve pins for higher density
devices.
The boundary scan register is loaded with the contents of the
RAM input and output ring when the TAP controller is in the
Capture-DR state and is then placed between the TDI and TDO
pins when the controller is moved to the Shift-DR state. The
EXTEST, SAMPLE/PRELOAD, and SAMPLE Z instructions are
used to capture the contents of the input and output ring.
The Boundary Scan Order on page 19 shows the order in which
the bits are connected. Each bit corresponds to one of the bumps
on the SRAM package. The MSB of the register is connected to
TDI, and the LSB is connected to TDO.
Identification (ID) Register
The ID register is loaded with a vendor-specific, 32-bit code
during the Capture-DR state when the IDCODE command is
loaded in the instruction register. The IDCODE is hardwired into
the SRAM and is shifted out when the TAP controller is in the
Shift-DR state. The ID register has a vendor code and other
information described in Identification Register Definitions on
page 18.
TAP Instruction Set
Eight different instructions are possible with the three-bit
instruction register. All combinations are listed in Instruction
Codes on page 18. Three of these instructions are listed as
RESERVED and must not be used. The other five instructions
are described in this section in detail.
Instructions are loaded into the TAP controller during the Shift-IR
state when the instruction register is placed between TDI and
TDO. During this state, instructions are shifted through the
instruction register through the TDI and TDO pins. To execute
the instruction after it is shifted in, the TAP controller must be
moved into the Update-IR state.
Page 13 of 32
[+] Feedback
CY7C1422KV18, CY7C1429KV18
CY7C1423KV18, CY7C1424KV18
IDCODE
BYPASS
The IDCODE instruction loads a vendor-specific, 32-bit code into
the instruction register. It also places the instruction register
between the TDI and TDO pins and shifts the IDCODE out of the
device when the TAP controller enters the Shift-DR state. The
IDCODE instruction is loaded into the instruction register at
power up or whenever the TAP controller is supplied a
Test-Logic-Reset state.
When the BYPASS instruction is loaded in the instruction register
and the TAP is placed in a Shift-DR state, the bypass register is
placed between the TDI and TDO pins. The advantage of the
BYPASS instruction is that it shortens the boundary scan path
when multiple devices are connected together on a board.
SAMPLE Z
The SAMPLE Z instruction connects the boundary scan register
between the TDI and TDO pins when the TAP controller is in a
Shift-DR state. The SAMPLE Z command puts the output bus
into a high Z state until the next command is supplied during the
Update IR state.
SAMPLE/PRELOAD
SAMPLE/PRELOAD is a 1149.1 mandatory instruction. When
the SAMPLE/PRELOAD instructions are loaded into the
instruction register and the TAP controller is in the Capture-DR
state, a snapshot of data on the input and output pins is captured
in the boundary scan register.
The user must be aware that the TAP controller clock can only
operate at a frequency up to 20 MHz, while the SRAM clock
operates more than an order of magnitude faster. Because there
is a large difference in the clock frequencies, it is possible that
during the Capture-DR state, an input or output undergoes a
transition. The TAP may then try to capture a signal while in
transition (metastable state). This does not harm the device, but
there is no guarantee as to the value that is captured.
Repeatable results may not be possible.
To guarantee that the boundary scan register captures the
correct value of a signal, the SRAM signal must be stabilized
long enough to meet the TAP controller’s capture setup plus hold
times (tCS and tCH). The SRAM clock input might not be captured
correctly if there is no way in a design to stop (or slow) the clock
during a SAMPLE/PRELOAD instruction. If this is an issue, it is
still possible to capture all other signals and simply ignore the
value of the CK and CK captured in the boundary scan register.
EXTEST
The EXTEST instruction drives the preloaded data out through
the system output pins. This instruction also connects the
boundary scan register for serial access between the TDI and
TDO in the Shift-DR controller state.
EXTEST OUTPUT BUS TRISTATE
IEEE Standard 1149.1 mandates that the TAP controller be able
to put the output bus into a tristate mode.
The boundary scan register has a special bit located at bit #108.
When this scan cell, called the “extest output bus tristate,” is
latched into the preload register during the Update-DR state in
the TAP controller, it directly controls the state of the output
(Q-bus) pins, when the EXTEST is entered as the current
instruction. When HIGH, it enables the output buffers to drive the
output bus. When LOW, this bit places the output bus into a
high Z condition.
This bit is set by entering the SAMPLE/PRELOAD or EXTEST
command, and then shifting the desired bit into that cell, during
the Shift-DR state. During Update-DR, the value loaded into that
shift-register cell latches into the preload register. When the
EXTEST instruction is entered, this bit directly controls the output
Q-bus pins. Note that this bit is pre-set LOW to enable the output
when the device is powered up, and also when the TAP controller
is in the Test-Logic-Reset state.
Reserved
These instructions are not implemented but are reserved for
future use. Do not use these instructions.
After the data is captured, it is possible to shift out the data by
putting the TAP into the Shift-DR state. This places the boundary
scan register between the TDI and TDO pins.
PRELOAD places an initial data pattern at the latched parallel
outputs of the boundary scan register cells before the selection
of another boundary scan test operation.
The shifting of data for the SAMPLE and PRELOAD phases can
occur concurrently when required, that is, while the data
captured is shifted out, the preloaded data can be shifted in.
Document Number: 001-57829 Rev. *B
Page 14 of 32
[+] Feedback
CY7C1422KV18, CY7C1429KV18
CY7C1423KV18, CY7C1424KV18
TAP Controller State Diagram
The state diagram for the TAP controller follows. [11]
1
TEST-LOGIC
RESET
0
0
TEST-LOGIC/
IDLE
1
SELECT
DR-SCAN
1
1
SELECT
IR-SCAN
0
0
1
1
CAPTURE-DR
CAPTURE-IR
0
0
SHIFT-DR
0
SHIFT-IR
1
1
EXIT1-DR
1
EXIT1-IR
0
0
PAUSE-IR
1
0
1
EXIT2-DR
0
EXIT2-IR
1
1
UPDATE-IR
UPDATE-DR
1
1
0
PAUSE-DR
0
0
0
1
0
Note
11. The 0/1 next to each state represents the value at TMS at the rising edge of TCK.
Document Number: 001-57829 Rev. *B
Page 15 of 32
[+] Feedback
CY7C1422KV18, CY7C1429KV18
CY7C1423KV18, CY7C1424KV18
TAP Controller Block Diagram
0
Bypass Register
2
Selection
Circuitry
TDI
1
0
Selection
Circuitry
Instruction Register
31
30
29
.
.
2
1
0
1
0
TDO
Identification Register
108
.
.
.
.
2
Boundary Scan Register
TCK
TAP Controller
TMS
TAP Electrical Characteristics
Over the Operating Range [12, 13, 14]
Parameter
Description
Test Conditions
Min
Max
Unit
VOH1
Output HIGH voltage
IOH =2.0 mA
1.4
–
V
VOH2
Output HIGH voltage
IOH =100 A
1.6
–
V
VOL1
Output LOW voltage
IOL = 2.0 mA
–
0.4
V
VOL2
Output LOW voltage
IOL = 100 A
–
0.2
V
VIH
Input HIGH voltage
VIL
Input LOW voltage
IX
Input and output load current
0.65 VDD VDD + 0.3
GND  VI  VDD
V
–0.3
0.35 VDD
V
–5
5
A
Notes
12. These characteristics pertain to the TAP inputs (TMS, TCK, TDI and TDO). Parallel load levels are specified in the Electrical Characteristics table.
13. Overshoot: VIH(AC) < VDDQ + 0.85 V (Pulse width less than tCYC/2), Undershoot: VIL(AC) > 1.5 V (Pulse width less than tCYC/2).
14. All voltage referenced to ground.
Document Number: 001-57829 Rev. *B
Page 16 of 32
[+] Feedback
CY7C1422KV18, CY7C1429KV18
CY7C1423KV18, CY7C1424KV18
TAP AC Switching Characteristics
Over the Operating Range [15, 16]
Parameter
Description
Min
Max
Unit
50
–
ns
TCK clock frequency
–
20
MHz
TCK clock HIGH
20
–
ns
TCK clock LOW
20
–
ns
tTMSS
TMS set-up to TCK clock rise
5
–
ns
tTDIS
TDI set-up to TCK clock rise
5
–
ns
tCS
Capture set-up to TCK rise
5
–
ns
tTCYC
TCK clock cycle time
tTF
tTH
tTL
Setup Times
Hold Times
tTMSH
TMS hold after TCK clock rise
5
–
ns
tTDIH
TDI hold after clock rise
5
–
ns
tCH
Capture hold after clock rise
5
–
ns
Output Times
tTDOV
TCK clock LOW to TDO valid
–
10
ns
tTDOX
TCK clock LOW to TDO invalid
0
–
ns
TAP Timing and Test Conditions
Figure 2 shows the TAP timing and test conditions. [16]
Figure 2. TAP Timing and Test Conditions
0.9V
ALL INPUT PULSES
1.8V
50
0.9V
TDO
0V
Z0 = 50
(a)
CL = 20 pF
tTH
GND
tTL
Test Clock
TCK
tTCYC
tTMSH
tTMSS
Test Mode Select
TMS
tTDIS
tTDIH
Test Data In
TDI
Test Data Out
TDO
tTDOV
tTDOX
Notes
15. tCS and tCH refer to the setup and hold time requirements of latching data from the boundary scan register.
16. Test conditions are specified using the load in TAP AC Test Conditions. tR/tF = 1 ns.
Document Number: 001-57829 Rev. *B
Page 17 of 32
[+] Feedback
CY7C1422KV18, CY7C1429KV18
CY7C1423KV18, CY7C1424KV18
Identification Register Definitions
Instruction Field
Value
CY7C1422KV18
CY7C1429KV18
CY7C1423KV18
CY7C1424KV18
000
000
000
000
Cypress device ID
(28:12)
11010100010000111
11010100010001111
11010100010010111
Cypress JEDEC ID
(11:1)
00000110100
00000110100
00000110100
00000110100
1
1
1
1
Revision number
(31:29)
ID register
presence (0)
Description
Version number.
11010100010100111 Defines the type of
SRAM.
Allows unique
identification of
SRAM vendor.
Indicates the
presence of an ID
register.
Scan Register Sizes
Register Name
Bit Size
Instruction
3
Bypass
1
ID
32
Boundary scan
109
Instruction Codes
Instruction
Code
Description
EXTEST
000
Captures the input and output ring contents.
IDCODE
001
Loads the ID register with the vendor ID code and places the register between TDI and TDO.
This operation does not affect SRAM operation.
SAMPLE Z
010
Captures the input and output contents. Places the boundary scan register between TDI and
TDO. Forces all SRAM output drivers to a high Z state.
RESERVED
011
Do Not Use: This instruction is reserved for future use.
SAMPLE/PRELOAD
100
Captures the input and output ring contents. Places the boundary scan register between TDI
and TDO. Does not affect the SRAM operation.
RESERVED
101
Do Not Use: This instruction is reserved for future use.
RESERVED
110
Do Not Use: This instruction is reserved for future use.
BYPASS
111
Places the bypass register between TDI and TDO. This operation does not affect SRAM
operation.
Document Number: 001-57829 Rev. *B
Page 18 of 32
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CY7C1422KV18, CY7C1429KV18
CY7C1423KV18, CY7C1424KV18
Boundary Scan Order
Bit #
Bump ID
Bit #
Bump ID
Bit #
Bump ID
Bit #
Bump ID
0
6R
28
10G
56
6A
84
1J
1
6P
29
9G
57
5B
85
2J
2
6N
30
11F
58
5A
86
3K
3
7P
31
11G
59
4A
87
3J
4
7N
32
9F
60
5C
88
2K
5
7R
33
10F
61
4B
89
1K
6
8R
34
11E
62
3A
90
2L
7
8P
35
10E
63
2A
91
3L
8
9R
36
10D
64
1A
92
1M
9
11P
37
9E
65
2B
93
1L
10
10P
38
10C
66
3B
94
3N
11
10N
39
11D
67
1C
95
3M
12
9P
40
9C
68
1B
96
1N
13
10M
41
9D
69
3D
97
2M
14
11N
42
11B
70
3C
98
3P
15
9M
43
11C
71
1D
99
2N
16
9N
44
9B
72
2C
100
2P
17
11L
45
10B
73
3E
101
1P
18
11M
46
11A
74
2D
102
3R
19
9L
47
10A
75
2E
103
4R
20
10L
48
9A
76
1E
104
4P
21
11K
49
8B
77
2F
105
5P
22
10K
50
7C
78
3F
106
5N
23
9J
51
6C
79
1G
107
5R
108
Internal
24
9K
52
8A
80
1F
25
10J
53
7A
81
3G
26
11J
54
7B
82
2G
27
11H
55
6B
83
1H
Document Number: 001-57829 Rev. *B
Page 19 of 32
[+] Feedback
CY7C1422KV18, CY7C1429KV18
CY7C1423KV18, CY7C1424KV18
Power Up Sequence in DDR II SRAM
PLL Constraints
DDR II SRAMs must be powered up and initialized in a
predefined manner to prevent undefined operations.
■
PLL uses K clock as its synchronizing input. The input must
have low phase jitter, which is specified as tKC Var.
■
The PLL functions at frequencies down to 120 MHz.
■
If the input clock is unstable and the PLL is enabled, then the
PLL may lock onto an incorrect frequency, causing unstable
SRAM behavior. To avoid this, provide 20 s of stable clock to
relock to the desired clock frequency.
Power Up Sequence
■
Apply power and drive DOFF either HIGH or LOW (All other
inputs can be HIGH or LOW).
❐ Apply VDD before VDDQ.
❐ Apply VDDQ before VREF or at the same time as VREF.
❐ Drive DOFF HIGH.
■
Provide stable DOFF (HIGH), power and clock (K, K) for 20 s
to lock the PLL.
~
~
Figure 3. Power Up Waveforms
K
K
~
~
Unstable Clock
> 20Ps Stable clock
Start Normal
Operation
Clock Start (Clock Starts after V DD / V DDQ Stable)
VDD / VDDQ
DOFF
Document Number: 001-57829 Rev. *B
V DD / V DDQ Stable (< +/- 0.1V DC per 50ns )
Fix HIGH (or tie to VDDQ)
Page 20 of 32
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CY7C1422KV18, CY7C1429KV18
CY7C1423KV18, CY7C1424KV18
Maximum Ratings
Neutron Soft Error Immunity
Exceeding maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Test
Parameter Description Conditions
Typ
Max*
Unit
Storage temperature ................................ –65 °C to +150 °C
LSBU
Logical
single-bit
upsets
25 °C
197
216
FIT/
Mb
LMBU
Logical
multi-bit
upsets
25 °C
0
0.01
FIT/
Mb
Single event
latch-up
85 °C
0
0.1
FIT/
Dev
Ambient temperature with power applied . –55 °C to +125 °C
Supply voltage on VDD relative to GND ........–0.5 V to +2.9 V
Supply voltage on VDDQ relative to GND....... –0.5 V to +VDD
DC applied to outputs in high Z ........ –0.5 V to VDDQ + 0.3 V
DC input voltage [17] ............................ –0.5 V to VDD + 0.3 V
SEL
Current into outputs (LOW) ......................................... 20 mA
Static discharge voltage (MIL-STD-883, M. 3015).. > 2001 V
Latch-up current .................................................... > 200 mA
Operating Range
Range
Commercial
Industrial
Ambient
Temperature (TA)
VDD [18]
VDDQ [18]
0 °C to +70 °C
1.8 ± 0.1 V
1.4 V to
VDD
–40 °C to +85 °C
* No LMBU or SEL events occurred during testing; this column represents a
statistical 2, 95% confidence limit calculation. For more details refer to
Application Note AN 54908 “Accelerated Neutron SER Testing and Calculation
of Terrestrial Failure Rates”
Electrical Characteristics
DC Electrical Characteristics
Over the Operating Range [19]
Parameter
Description
Test Conditions
Min
Typ
Max
Unit
VDD
Power supply voltage
1.7
1.8
1.9
V
VDDQ
IO supply voltage
1.4
1.5
VDD
V
VOH
Output HIGH voltage
Note 20
VDDQ/2 – 0.12
–
VDDQ/2 + 0.12
V
VOL
Output LOW voltage
Note 21
VDDQ/2 – 0.12
–
VDDQ/2 + 0.12
V
VOH(LOW)
Output HIGH voltage
IOH =0.1 mA, nominal impedance
VDDQ – 0.2
–
VDDQ
V
VOL(LOW)
Output LOW voltage
IOL = 0.1 mA, nominal impedance
VSS
–
0.2
V
VIH
Input HIGH voltage
VREF + 0.1
–
VDDQ + 0.3
V
VIL
Input LOW voltage
–0.3
–
VREF – 0.1
V
IX
Input leakage current
GND  VI  VDDQ
5
–
5
A
IOZ
Output leakage current
GND  VI  VDDQ, output disabled
5
–
5
A
0.68
0.75
0.95
V
VREF
Input reference voltage
[22]
Typical Value = 0.75 V
Notes
17. Overshoot: VIH(AC) < VDDQ + 0.85 V (Pulse width less than tCYC/2), Undershoot: VIL(AC) > 1.5 V (Pulse width less than tCYC/2).
18. Power-up: assumes a linear ramp from 0 V to VDD(min) within 200 ms. During this time VIH < VDD and VDDQ < VDD.
19. All voltage referenced to ground.
20. Outputs are impedance controlled. IOH = –(VDDQ/2)/(RQ/5) for values of 175  < RQ < 350 .
21. Outputs are impedance controlled. IOL = (VDDQ/2)/(RQ/5) for values of 175  < RQ < 350 .
22. VREF(min) = 0.68 V or 0.46 VDDQ, whichever is larger, VREF(max) = 0.95 V or 0.54 VDDQ, whichever is smaller.
Document Number: 001-57829 Rev. *B
Page 21 of 32
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CY7C1422KV18, CY7C1429KV18
CY7C1423KV18, CY7C1424KV18
Electrical Characteristics
(continued)
DC Electrical Characteristics
Over the Operating Range [19]
Parameter
IDD
[23]
Description
VDD operating supply
Test Conditions
VDD = Max, IOUT = 0 mA, 333 MHz
f = fMAX = 1/tCYC
300 MHz
250 MHz
200 MHz
167 MHz
Min
Typ
Max
Unit
(× 8)
–
–
480
mA
(× 9)
–
–
480
(× 18)
–
–
490
(× 36)
–
–
600
(× 8)
–
–
450
(× 9)
–
–
450
(× 18)
–
–
460
(× 36)
–
–
560
(× 8)
–
–
420
(× 9)
–
–
420
(× 18)
–
–
430
(× 36)
–
–
490
(× 8)
–
–
370
(× 9)
–
–
370
(× 18)
–
–
380
(× 36)
–
–
430
(× 8)
–
–
340
(× 9)
–
–
340
(× 18)
–
–
340
(× 36)
–
–
380
mA
mA
mA
mA
Note
23. The operation current is calculated with 50% read cycle and 50% write cycle.
Document Number: 001-57829 Rev. *B
Page 22 of 32
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CY7C1422KV18, CY7C1429KV18
CY7C1423KV18, CY7C1424KV18
Electrical Characteristics
(continued)
DC Electrical Characteristics
Over the Operating Range [19]
Parameter
ISB1
Description
Automatic power-down
current
Test Conditions
Max VDD,
both ports deselected,
VIN  VIH or VIN  VIL
f = fMAX = 1/tCYC,
inputs static
333 MHz
300 MHz
250 MHz
200 MHz
167 MHz
Min
Typ
Max
Unit
(× 8)
–
–
280
mA
(× 9)
–
–
280
(× 18)
–
–
280
(× 36)
–
–
280
(× 8)
–
–
270
(× 9)
–
–
270
(× 18)
–
–
270
(× 36)
–
–
270
(× 8)
–
–
260
(× 9)
–
–
260
(× 18)
–
–
260
(× 36)
–
–
260
(× 8)
–
–
250
(× 9)
–
–
250
(× 18)
–
–
250
(× 36)
–
–
250
(× 8)
–
–
250
(× 9)
–
–
250
(× 18)
–
–
250
(× 36)
–
–
250
Min
Typ
Max
Unit
mA
mA
mA
mA
AC Electrical Characteristics
Over the Operating Range [24]
Parameter
Description
Test Conditions
VIH
Input HIGH voltage
VREF + 0.2
–
–
V
VIL
Input LOW voltage
–
–
VREF – 0.2
V
Note
24. Overshoot: VIH(AC) < VDDQ + 0.85 V (Pulse width less than tCYC/2), Undershoot: VIL(AC) > 1.5 V (Pulse width less than tCYC/2).
Document Number: 001-57829 Rev. *B
Page 23 of 32
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CY7C1422KV18, CY7C1429KV18
CY7C1423KV18, CY7C1424KV18
Capacitance
Tested initially and after any design or process change that may affect these parameters.
Parameter
Description
CIN
Input capacitance
CO
Output capacitance
Test Conditions
TA = 25 C, f = 1 MHz, VDD = 1.8 V, VDDQ = 1.5 V
Max
Unit
4
pF
4
pF
165 FBGA
Package
Unit
13.7
°C/W
3.73
°C/W
Thermal Resistance
Tested initially and after any design or process change that may affect these parameters.
Parameter
Description
JA
Thermal resistance
(junction to ambient)
JC
Thermal resistance
(junction to case)
Test Conditions
Test conditions follow standard test methods and
procedures for measuring thermal impedance, in
accordance with EIA/JESD51.
Figure 4. AC Test Loads and Waveforms
VREF = 0.75 V
VREF
0.75 V
VREF
OUTPUT
Z0 = 50 
Device
Under
Test
ZQ
RL = 50 
R = 50 
ALL INPUT PULSES
1.25 V
0.75 V
OUTPUT
Device
Under
VREF = 0.75 V Test ZQ
RQ =
250 
(a)
0.75 V
INCLUDING
JIG AND
SCOPE
5 pF
[25]
0.25 V
Slew Rate = 2 V/ns
RQ =
250 
(b)
Note
25. Unless otherwise noted, test conditions are based on signal transition time of 2 V/ns, timing reference levels of 0.75 V, Vref = 0.75 V, RQ = 250 , VDDQ = 1.5 V, input
pulse levels of 0.25 V to 1.25 V, and output loading of the specified IOL/IOH and load capacitance shown in (a) of Figure 4.
Document Number: 001-57829 Rev. *B
Page 24 of 32
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CY7C1422KV18, CY7C1429KV18
CY7C1423KV18, CY7C1424KV18
Switching Characteristics
Over the Operating Range [26, 27]
Cypress Consortium
Parameter Parameter
Description
VDD(typical) to the first access [28]
tPOWER
333 MHz
300 MHz
250 MHz
200 MHz
167 MHz
Min Max Min Max Min Max Min Max Min Max
Unit
1
–
1
–
1
–
1
–
1
–
ms
tCYC
tKHKH
K clock and C clock cycle time
3.0
8.4
3.3
8.4
4.0
8.4
5.0
8.4
6.0
8.4
ns
tKH
tKHKL
Input clock (K/K; C/C) HIGH
1.20
–
1.32
–
1.6
–
2.0
–
2.4
–
ns
tKL
tKLKH
Input clock (K/K; C/C) LOW
1.20
–
1.32
–
1.6
–
2.0
–
2.4
–
ns
tKHKH
tKHKH
K clock rise to K clock rise and C to 1.35
C rise (rising edge to rising edge)
–
1.49
–
1.8
–
2.2
–
2.7
–
ns
tKHCH
tKHCH
K/K clock rise to C/C clock rise
(rising edge to rising edge)
0
1.30
0
1.45
0
1.8
0
2.2
0
2.7
ns
Setup Times
tSA
tAVKH
Address set-up to K clock rise
0.4
–
0.4
–
0.5
–
0.6
–
0.7
–
ns
tSC
tIVKH
Control set-up to K clock rise
(LD, R/W)
0.4
–
0.4
–
0.5
–
0.6
–
0.7
–
ns
tSCDDR
tIVKH
Double data rate control set-up to
clock (K/K) rise
(BWS0, BWS1, BWS2, BWS3)
0.3
–
0.3
–
0.35
–
0.4
–
0.5
–
ns
tSD
tDVKH
D[X:0] set-up to clock (K/K) rise
0.3
–
0.3
–
0.35
–
0.4
–
0.5
–
ns
Hold Times
tHA
tKHAX
Address hold after K clock rise
0.4
–
0.4
–
0.5
–
0.6
–
0.7
–
ns
tHC
tKHIX
Control hold after K clock rise
(LD, R/W)
0.4
–
0.4
–
0.5
–
0.6
–
0.7
–
ns
tHCDDR
tKHIX
Double data rate control hold after
clock (K/K) rise
(BWS0, BWS1, BWS2, BWS3)
0.3
–
0.3
–
0.35
–
0.4
–
0.5
–
ns
tHD
tKHDX
D[X:0] hold after clock (K/K) rise
0.3
–
0.3
–
0.35
–
0.4
–
0.5
–
ns
Notes
26. Unless otherwise noted, test conditions are based on signal transition time of 2 V/ns, timing reference levels of 0.75 V, Vref = 0.75 V, RQ = 250 , VDDQ = 1.5 V, input
pulse levels of 0.25 V to 1.25 V, and output loading of the specified IOL/IOH and load capacitance shown in (a) of Figure 4 on page 24.
27. When a part with a maximum frequency above 167 MHz is operating at a lower clock frequency, it requires the input timings of the frequency range in which it is operated
and outputs data with the output timings of that frequency range.
28. This part has a voltage regulator internally; tPOWER is the time that the power must be supplied above VDD minimum initially before a read or write operation can be
initiated.
Document Number: 001-57829 Rev. *B
Page 25 of 32
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CY7C1422KV18, CY7C1429KV18
CY7C1423KV18, CY7C1424KV18
Switching Characteristics
Over the Operating Range [26, 27]
Cypress Consortium
Parameter Parameter
(continued)
Description
333 MHz
300 MHz
250 MHz
200 MHz
167 MHz
Min Max Min Max Min Max Min Max Min Max
Unit
Output Times
–
0.45
–
0.45
–
0.45
–
0.45
–
0.50
ns
Data output hold after output C/C
clock rise (active to active)
–0.45
–
–0.45
–
–0.45
–
–0.45
–
–0.50
–
ns
tCHCQV
C/C clock rise to echo clock valid
–
0.45
–
0.45
–
0.45
–
0.45
–
0.50
ns
tCQOH
tCHCQX
Echo clock hold after C/C clock rise –0.45
–
–0.45
–
–0.45
–
–0.45
–
–0.50
–
ns
tCQD
tCQHQV
Echo clock high to data valid
–
0.25
–
0.27
–
0.30
–
0.35
–
0.40
ns
tCQDOH
tCQHQX
Echo clock high to data invalid
–0.25
–
–0.27
–
–0.30
–
–0.35
–
–0.40
–
ns
tCQH
tCQHCQL
Output clock (CQ/CQ) HIGH [29]
1.25
–
1.40
–
1.75
–
2.25
–
2.75
–
ns
tCQHCQH
tCQHCQH
CQ clock rise to CQ clock rise
(rising edge to rising edge) [29]
1.25
–
1.40
–
1.75
–
2.25
–
2.75
–
ns
tCHZ
tCHQZ
Clock (C/C) rise to high Z
(active to high Z) [30, 31]
–
0.45
–
0.45
–
0.45
–
0.45
–
0.50
ns
tCLZ
tCHQX1
Clock (C/C) rise to low Z [30, 31]
–0.45
–
–0.45
–
–0.45
–
–0.45
–
–0.50
–
ns
–
0.20
–
0.20
–
0.20
–
0.20
–
0.20
ns
20
–
20
–
20
–
20
–
20
–
s
30
–
30
–
30
–
30
–
30
–
ns
tCO
tCHQV
C/C clock rise (or K/K in single clock
mode) to data valid
tDOH
tCHQX
tCCQO
PLL Timing
tKC Var
tKC Var
Clock phase jitter
C)[32]
tKC lock
tKC lock
PLL lock time (K,
tKC Reset
tKC Reset
K static to PLL reset
Notes
29. These parameters are extrapolated from the input timing parameters (tCYC/2 - 250 ps, where 250 ps is the internal jitter). These parameters are only guaranteed by
design and are not tested in production
30. tCHZ, tCLZ, are specified with a load capacitance of 5 pF as in (b) of Figure 4 on page 24. Transition is measured ± 100 mV from steady-state voltage.
31. At any voltage and temperature tCHZ is less than tCLZ and tCHZ less than tCO.
32. For frequencies 300 MHz or below, the Cypress QDR II devices surpass the QDR consortium specification for PLL lock time (tKC lock) of 20 µs (min. spec.) and will
lock after 1024 clock cycles (min. spec.), after a stable clock is presented, per the previous 90 nm version.
Document Number: 001-57829 Rev. *B
Page 26 of 32
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Switching Waveforms
Figure 5. Read/Write/Deselect Sequence [33, 34, 35]
NOP
READ
(burst of 2)
2
1
READ
(burst of 2)
3
WRITE
(burst of 2)
5
WRITE
(burst of 2)
4
READ
(burst of 2)
6
NOP
7
8
K
tKH
tKHKH
tCYC
tKL
K
LD
t SC
tHC
R/W
A
A0
tSA
A1
A2
A3
A4
tHD
tHD
tHA
tSD
tSD
D
D20
Q00
Q
t KHCH
t
Q01
tCQD
t CLZ
Q10
D21
D31
Q11
Q40
Q41
tDOH
KHCH
tCO
D30
t CHZ
tCQDOH
C
tKH
tCYC
tKL
tKHKH
C#
tCQOH
tCCQO
CQ
tCQOH
tCCQO
tCQH
tCQHCQH
CQ#
DON’T CARE
UNDEFINED
Notes
33. Q00 refers to output from address A0. Q01 refers to output from the next internal burst address following A0, that is, A0+1.
34. Outputs are disabled (high Z) one clock cycle after a NOP.
35. In this example, if address A4 = A3, then data Q40 = D30 and Q41 = D31. Write data is forwarded immediately as read results. This note applies to the whole diagram.
Document Number: 001-57829 Rev. *B
Page 27 of 32
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CY7C1423KV18, CY7C1424KV18
Ordering Information
The following table contains only the parts that are currently available. If you do not see what you are looking for, contact your local
sales representative. For more information, visit the Cypress website at www.cypress.com and refer to the product summary page at
http://www.cypress.com/products
Cypress maintains a worldwide network of offices, solution centers, manufacturer’s representatives and distributors. To find the office
closest to you, visit us at http://www.cypress.com/go/datasheet/offices.
Speed
(MHz)
Package
Diagram
Ordering Code
333
CY7C1424KV18-333BZC
300
CY7C1423KV18-300BZC
250
CY7C1423KV18-250BZC
Package Type
51-85180 165-ball Fine-Pitch Ball Grid Array (13 × 15 × 1.4 mm)
CY7C1423KV18-333BZXC
Operating
Range
Commercial
165-ball Fine-Pitch Ball Grid Array (13 × 15 × 1.4 mm) Pb-free
51-85180 165-ball Fine-Pitch Ball Grid Array (13 × 15 × 1.4 mm)
CY7C1423KV18-300BZXC
Commercial
165-ball Fine-Pitch Ball Grid Array (13 × 15 × 1.4 mm) Pb-free
51-85180 165-ball Fine-Pitch Ball Grid Array (13 × 15 × 1.4 mm)
Commercial
CY7C1424KV18-250BZC
CY7C1423KV18-250BZXC
165-ball Fine-Pitch Ball Grid Array (13 × 15 × 1.4 mm) Pb-free
Ordering Code Definitions
CY 7C 14XX K V18 - XXX BZ
X
C
Temperature Range:
C = Commercial = 0 C to +70 C
X = Pb-free; X Absent = Leaded
Package Type:
BZ = 165-ball FBGA
Speed Grade: XXX = 333 MHz / 300 MHz / 250 MHz
V18 = 1.8 V VDD
Process Technology  65 nm
14XX = 1423 or 1424 = Part Identifier
Marketing Code: 7C = SRAMs
Company ID: CY = Cypress
Document Number: 001-57829 Rev. *B
Page 28 of 32
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Package Diagram
Figure 6. 165-ball FBGA (13 × 15 × 1.4 mm), 51-85180
51-85180 *C
Document Number: 001-57829 Rev. *B
Page 29 of 32
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Acronyms
Document Conventions
Acronym
Description
Units of Measure
DDR
double data rate
FBGA
fine-pitch ball grid array

ohms
HSTL
high-speed transceiver logic
K
kilo ohms
I/O
input/output
ns
nano seconds
JTAG
joint test action group
V
Volts
LSB
least significant bit
µs
micro seconds
LMBU
logical multiple bit upset
µA
micro Amperes
LSBU
logical single bit upset
mA
milli Amperes
MSB
most significant bit
mm
milli meter
PLL
phase locked loop
ms
milli seconds
SEL
single event latch up
MHz
Mega Hertz
SRAM
static random access memory
pF
pico Farad
TAP
test access port
%
percent
TCK
test clock
W
Watts
TMS
test mode select
°C
degree Celcius
TDI
test data-in
TDO
test data-out
TQFP
thin quad flat pack
Document Number: 001-57829 Rev. *B
Symbol
Unit of Measure
Page 30 of 32
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Document History Page
Document Title: CY7C1422KV18/CY7C1429KV18/CY7C1423KV18/CY7C1424KV18, 36-Mbit DDR II SIO SRAM 2-Word Burst
Architecture
Document Number: 001-57829
Rev.
ECN No.
Orig. of
Change
Submission Description of Change
Date
**
2816620 VKN/AESA
11/27/2009
New Data Sheet
*A
3068457
NJY
10/21/2010
Converted from Preliminary to Final.
Added Ordering Code Definitions.
Updated Package Diagram.
Minor edits and updated in new template.
*B
3167511
NJY
02/09/2011
Added Note 32.
Updated Ordering Information.
Added Acronyms and Units of Measure.
Document Number: 001-57829 Rev. *B
Page 31 of 32
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Sales, Solutions, and Legal Information
Worldwide Sales and Design Support
Cypress maintains a worldwide network of offices, solution centers, manufacturer’s representatives, and distributors. To find the office
closest to you, visit us at cypress.com/sales.
Products
Automotive
Clocks & Buffers
Interface
Lighting & Power Control
PSoC Solutions
cypress.com/go/automotive
cypress.com/go/clocks
psoc.cypress.com/solutions
cypress.com/go/interface
PSoC 1 | PSoC 3 | PSoC 5
cypress.com/go/powerpsoc
cypress.com/go/plc
Memory
Optical & Image Sensing
PSoC
Touch Sensing
cypress.com/go/memory
cypress.com/go/image
cypress.com/go/psoc
cypress.com/go/touch
USB Controllers
Wireless/RF
cypress.com/go/USB
cypress.com/go/wireless
© Cypress Semiconductor Corporation, 2009-2011. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of
any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used for
medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use as
critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support systems
application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges.
Any Source Code (software and/or firmware) is owned by Cypress Semiconductor Corporation (Cypress) and is protected by and subject to worldwide patent protection (United States and foreign),
United States copyright laws and international treaty provisions. Cypress hereby grants to licensee a personal, non-exclusive, non-transferable license to copy, use, modify, create derivative works of,
and compile the Cypress Source Code and derivative works for the sole purpose of creating custom software and or firmware in support of licensee product to be used only in conjunction with a Cypress
integrated circuit as specified in the applicable agreement. Any reproduction, modification, translation, compilation, or representation of this Source Code except as specified above is prohibited without
the express written permission of Cypress.
Disclaimer: CYPRESS MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARD TO THIS MATERIAL, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES
OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Cypress reserves the right to make changes without further notice to the materials described herein. Cypress does not
assume any liability arising out of the application or use of any product or circuit described herein. Cypress does not authorize its products for use as critical components in life-support systems where
a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress’ product in a life-support systems application implies that the manufacturer
assumes all risk of such use and in doing so indemnifies Cypress against all charges.
Use may be limited by and subject to the applicable Cypress software license agreement.
Document Number: 001-57829 Rev. *B
Revised February 28, 2011
Page 32 of 32
QDR RAMs and Quad Data Rate RAMs comprise a new family of products developed by Cypress, IDT, NEC, Renesas, and Samsung. All products and company names mentioned in this document
may be the trademarks of their respective holders.
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