UNISONIC TECHNOLOGIES CO., IMT17 DUAL TRANSISTOR GENERAL PURPOSE DUAL TRANSISTOR FEATURES *Two MMBT2907A chips in an SMT package. *Transistor elements are independent, eliminating interference. *High collector current. Ic = -500mA EQUIVALENT CIRCUITS ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free IMT17L-AG6 -R IMT17G-AG6-R SOT-26 Note: Pin Assignment: B: Base C: Collector E: Emitter 1 E1 Pin Assignment 2 3 4 5 B1 C2 E2 B2 6 C1 Packing Tape Reel MARKING www.unisonic.com.tw Copyright © 2012 Unisonic Technologies Co., 1 QW-R215-006.B IMT17 DUAL TRANSISTOR ABSOLUATE MAXIUM RATINGS* (Ta = 25℃) PARAMETER SYMBOL Collector Base Voltage VCBO Collector Emitter Voltage VCEO Emitter Base Voltage VEBO Collector Current Ic Power Dissipation PD Junction Temperature TJ Storage Temperature TSTG *200mW per element must not be exceeded. RATINGS -60 -50 -5 -500 300 +150 -40 ~ +150 UNIT V V V mA mW* °C °C ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified.) PARAMETER Collector Base Breakdown Voltage Collector Emitter Breakdown Voltage Emitter Base Breakdown Voltage Collector Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current Output Capacitance DC Current Transfer Ratio Transition Frequency *Measured using pulse current. SYMBOL BVCBO BVCEO BVEBO VCE(sat) ICBO IEBO Cob hFE fT TEST CONDITIONS Ic = -100μA Ic = -1mA IE = -100μA Ic = -500mA, IB = -50mA VCB = -30V VEB = -4V VCE = -10V, IE=0A, f =1MHz VCE = -3V, Ic = -100mA VCE = -10V, IE =20mA, f =100MHz UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN -60 -50 -5 120 TYP MAX UNIT V V V -0.6 V -0.1 μA -0.1 μA 7 pF 390 200 MHz 2 QW-R215-006.B IMT17 DUAL TRANSISTOR ■ TYPICAL CHARACTERICS Grounded Emitter Propagaton Characteristics Ta = 100°C -200 -100 Ta = 25°C -50 VCE = -3V Ta = -40°C -20 -10 -5 -2 -1 -0.5 -0.2 -0.1 TRANSITION FREQUENCY, fT (MHz) COLLECTOR CURRENT, IC (mA) -500 Gain Bandwidth Product vs. Emitter Current Ta = 25°C VCE = -5V 1000 500 200 100 50 0 -0.2-0.4-0.6-0.8-1.0-1.2-1.4-1.6-1.8-2.0-2.2 0.5 -0.8mA -80 COLLECTOR CURRENT, IC (mA) COLLECTOR CURRENT, IC (mA) -500 -0.9mA -1mA -0.7mA -0.6mA -60 -0.5mA -0.4mA -40 -0.3mA -0.2mA -20 0 -0.1mA -2 -3 -4 -200 -1.0mA 0 100 50 20 -1 -2 1000 -5 -10 -20 -50 -100-200-500-1000 COLLECTOR CURRENT, IC (mA) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw -5 0 IB = 0A -10 DC Current Gain vs. Collector Current (II) DC CURRENT GAIN, hFE DC CURRENT GAIN, hFE VCE = -1V VCE = -3V VCE = -5V -0.5mA COLLECTOR TO EMITTER VOLTAGE, VCE (V) Ta = 25°C 200 50 -1.5mA -100 DC Current Gain vs. Collector Current (I) 500 20 -5.0mA -4.5mA -4.0mA -3.5mA -3.0mA -2.5mA -2.0mA -300 -5 COLLECTOR TO EMITTER VOLTAGE, VCE (V) 1000 10 Ta = 25°C -400 IB = 0A -1 0 5 Grounded Emitter Output Characteristics (II) Grounded Emitter Output Characteristics (I) Ta = 25°C 2 EMITTER CURRENT, IE (mA) BASE TO EMITTER VOLTAGE, VBE (V) -100 1 VCE = -3V 500 Ta = 100°C 200 Ta = 25°C 100 Ta = -40°C 50 20 -1 -2 -5 -10 -20 -50 -100-200-500-1000 COLLECTOR CURRENT, IC (mA) 3 QW-R215-006.B IMT17 COLLECTOR SATURATION VOLTAGE, VCE (sat) (V) TYPICAL CHARACTERICS(cont.) COLLECTOR SATURATION VOLTAGE, VCE (sat) (V) DUAL TRANSISTOR UTC assum es no responsibility for equipm ent failures that result from using products at v alues that ex ceed, ev en m om entarily, rated v alues (such as m ax im um ratings, operating condition ranges, or other param eters) listed in products specifications of any and all UT C products described or contained herein. UT C products are not designed for use in life support appliances, dev ices or system s where m alfunction of these products can be reasonably expected to result in personal injury. R eproduction in whole or in part is prohibited without the prior written consent of the copyright owner. T he inform ation presented in this docum ent does not form part of any quotation or contract, is believ ed to be accurate and reliable and m ay be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 QW-R215-006.B