isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors MJ13080/13081 DESCRIPTION · Collector-Emitter Sustaining Voltage: VCEO(SUS) = 400V(Min)—MJ13080 = 450V(Min)—MJ13081 ·High Switching Speed APPLICATIONS ·Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switch-mode applications. Typical applications: ·Switching regulators ·Inverters ·Solenoid and relay drivers ·Motor controls ·Deflection circuits ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCEV VCEO(SUS) VEBO PARAMETER VALUE MJ13080 650 MJ13081 750 MJ13080 400 MJ13081 450 Collector-Emitter Voltage UNIT V Collector-Emitter Voltage V Emitter-Base Voltage 6 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak 12 A IB Base Current-Continuous 3 A IBM Base Current-Peak 6 A PC Collector Power Dissipation@TC=25℃ 150 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ B THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.17 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors MJ13080/13081 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL VCEO(SUS) PARAMETER Collector-Emitter Sustaining Voltage CONDITIONS MJ13080 TYP. VBE(sat) V 450 IC= 5A; IB= 1A IC= 5A; IB= 1A;TC=100℃ 1.0 2.0 V Collector-Emitter Saturation Voltage IC= 8A; IB= 1.6A 3.0 V Base-Emitter Saturation Voltage IC= 5A; IB= 1A IC= 5A; IB= 1A;TC=100℃ 1.5 1.5 V MJ13080 VCEV=650V;VBE(off)=1.5V VCEV=650V;VBE(off)=1.5V;TC=100℃ 0.5 2.5 MJ13081 VCEV=750V;VBE(off)=1.5V VCEV=750V;VBE(off)=1.5V;TC=100℃ 0.5 2.5 MJ13080 VCE= 650V; RBE= 50Ω,TC= 100℃ 3.0 MJ13081 VCE= 750V; RBE= 50Ω,TC= 100℃ 3.0 1.0 mA 300 pF 25 50 ns 100 500 ns 500 1500 ns 150 500 ns Collector-Emitter Saturation Voltage B B B B ICEV ICER UNIT 400 B VCE(sat)-2 MAX IC=100mA ; IB=0 MJ13081 VCE(sat)-1 MIN Collector Cutoff Current Collector Cutoff Current mA mA IEBO Emitter Cutoff Current VEB= 6V; IC=0 hFE DC Current Gain IC= 5A ; VCE= 3V COB Output Capacitance IE= 0; VCB= 10V; ftest=1.0kHz 8 Switching times;Resistive Load td Delay Time tr Rise Time ts Storage Time tf Fall Time isc Website：www.iscsemi.cn IC= 5A , VCC= 250V; IB1= 0.7A;tp= 30μs; VBE(off)= 5V Duty Cycle≤2.0% 2