Weitron MUN5312DW Dual bias resistor transistor npnpnp silicon Datasheet

MUN5311DW Series
6
Dual Bias Resistor Transistor
NPN+PNP Silicon
5
R1
Q2
P b Lead(Pb)-Free
4
6 5
R2
1
Q1
R2
R1
1
3
SOT-363(SC-88)
3
2
2
4
Maximum Ratings ( TA=25˚C unless otherwise noted, common for Q1 adn Q2, -minus sign for Q1(PNP) omitted)
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
50
Collector-Base Voltage
VCBO
50
Vdc
Vdc
IC
100
mAdc
Rating
Collector Current-Continuous
Thermal Characteristics
Characteristics(One Junction Heated)
Symbol
Total Device Dissipation
TA=25˚C
Derate above 25˚C
Max
Unit
187(1)
256(2)
1.5(1)
2.0(2)
PD
mW
mW/˚C
RθJA
670(1)
490(2)
˚C/W
Symbol
Max
Unit
Total Device Dissipation
TA=25˚C
Derate above 25˚C
PD
250(1)
385(2)
2.0(1)
3.0(2)
Thermal Resistance, Junction to Ambient
RθJA
Thermal Resistance, Junction to Lead
RθJL
Thermal Resistance, Junction to Ambient
Characteristics(Both Junctions Heated)
1.FR-4 @ minimum pad.
mW/ C
493(1)
325(2)
188(1)
208(2)
TJ,Tstg
Junction and Storage, Temperature Range
mW
˚C/W
˚C/W
-55 to +150
˚C
2.FR-4 @ 1.0 x 1.0 inch Pad
Device Marking and Resistor Values
Marking
R1(K)
R2(K)
Device
Marking
R1(K)
R2(K)
MUN5311DW
MUN5312DW
MUN5313DW
MUN5314DW
MUN5315DW
MUN5316DW
11
12
13
14
15
16
10
22
47
10
10
4.7
10
22
47
47
MUN5330DW
MUN5331DW
MUN5332DW
MUN5333DW
MUN5334DW
MUN5335DW
30
31
32
33
34
35
1.0
2.2
4.7
4.7
22
2.2
1.0
2.2
4.7
47
47
47
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8 8
Device
1/29
Rev.B 20-Jan-09
MUN5311DW Series
Electrical Characteristics
WEITRON
(TA=25 C Unless Otherwise noted)
Characteristics
Symbol
Min
Typ
Max
Unit
Collector-Base Breakdown Voltage
(IC=10 uA ,IE=0)
V(BR)CBO
50
-
-
V
Collector-Emitter Breakdown Voltage3
(IC=2.0mA, IB =0)
V(BR)CEO
50
-
-
V
ICBO
-
-
100
nA
ICEO
-
-
500
nA
IEBO
-
-
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
0.2
mA
VCE(sat)
-
-
0.25
Vdc
Off Characteristics
Collector-Base Cutoff Voltage
(VCB=50 V, IE =0)
Collector-Emitter Cutoff Current
(VCE=50V, IB=0)
Emitter-Base Cutoff Current
(VEB=6.0V, IC=0)
MUN5311DW
MUN5312DW
MUN5313DW
MUN5314DW
MUN5315DW
MUN5316DW
MUN5330DW
MUN5331DW
MUN5332DW
MUN5333DW
MUN5334DW
MUN5335DW
On Characteristics3
Collector-Emitter Saturation Voltage (IC =10mA, IB =0.3mA)
(IC =10mA, I B =5mA)
MUN5330DW/MUN5331DW
(IC =10mA, IB =1mA)
MUN5315DW/MUN5316DW
MUN5332DW/MUN5333DW/MUN5334DW
3. Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%
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Rev.A 29-Dec-05
WEITRON
MUN5311DW Series
Electrical Characteristics
(TA=25 C Unless Otherwise noted, common for Q1 and Q2, -minus sign for Q1(PNP) omitted) (Continued)
Characteristics
Symbol
Min
Typ
Max
-
Unit
On Characteristics3
DC Current Gain
(VCE=-10V, IC =5.0mA)
MUN5311DW
MUN5312DW
MUN5313DW
MUN5314DW
MUN5315DW
MUN5316DW
MUN5330DW
MUN5331DW
MUN5332DW
MUN5333DW
MUN5334DW
MUN5335DW
h FE
35
60
80
80
160
160
3.0
8.0
15
80
80
80
60
100
140
140
350
350
5.0
15
30
200
150
140
Output Voltage(on)
(VCC=5.0V, VB =2.5V, R =1.0kΩ )
MUN5311DW
MUN5312DW
MUN5314DW
MUN5315DW
MUN5316DW
MUN5330DW
MUN5331DW
MUN5332DW
MUN5333DW
MUN5334DW
MUN5335DW
MUN5313DW
VOL
-
-
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
Output Voltage(off ) (VCC =5.0V, VB =0.5V, RL =1.0kΩ )
(VCC =5.0V, VB =0.05V, RL =1.0kΩ )
MUN5330DW
MUN5315DW
(VCC =5.0V, VB =0.25V, RL =1.0kΩ )
MUN5316DW
MUN5333DW
VOH
4.9
-
-
(VCC =5.0V, VB =3.5V, RL =1.0kΩ )
Vdc
Vdc
3. Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%
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Rev.A 29-Dec-05
MUN5311DW Series
Electrical Characteristics
WEITRON
(TA=25 C Unless Otherwise noted)
Characteristics
Symbol
Min
Typ
Max
Unit
R1
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
1.54
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
2.86
kΩ
R1/R2
0.8
0.17
0.8
0.055
0.38
0.038
1.0
0.21
1.0
0.1
0.47
0.047
1.2
0.25
1.2
0.185
0.56
0.056
On Characteristics3
MUN5311DW
MUN5312DW
MUN5313DW
MUN5314DW
MUN5315DW
MUN5316DW
MUN5330DW
MUN5331DW
MUN5332DW
MUN5333DW
MUN5334DW
MUN5335DW
Input Resistor
Resistor Ratio MUN5311DW/MUN5312DW/MUN5313DW
MUN5314DW
MUN5315DW/MUN5316DW
MUN5330DW/MUN5331DW/MUN5332DW
MUN5333DW
MUN5334DW
MUN5335DW
3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0 %
MUN5311DW
1
Series
ALL MUN5111DW SERIES DEVICES
300
PD , POWER DISSIPATION(mW)
250
200
150
100
50
0
- 50
RθJA=490°C/W
0
50
100
150
TA, AMBIENT TEMPERATURE(°C)
FIG.1 Derating Curve
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Rev.A 29-Dec-05
MUN5311DW Series
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TYPICAL ELECTRICAL CHARACTERISTICS − MUN5311DW1T1 NPN TRANSISTOR
1000
I C/I B = 10
TA
hFE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , COLLECTOR VOLTAGE (VOLTS)
1
°C
25°C
0.1
75°C
0.01
0.001
0
20
40
I C, COLLECTOR CURRENT (mA)
VCE=10V
TA =75° C
25°C
-25 °C
100
10
50
1
10
I C, COLLECTOR CURRENT (mA)
Figure 2. VCE(sat) versus IC
Figure 3. DC Current Gain
100
2
1
0
0
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
25°C
75°C
f = 1 MHz
IE = 0 V
TA = 25°C
I C , COLLECTOR CURRENT (mA)
Cob , CAPACITANCE (pF)
4
3
100
50
TA
10
°C
1
0.1
0.01
VO = 5 V
0.001
0
Figure 4. Output Capacitance
1
2
3
4
5
6
7
V in , INPUT VOLTAGE (VOLTS)
8
9
10
Figure 5. Output Current versus Input Voltage
10
V in , INPUT VOLTAGE (VOLTS)
VO=0.2V
TA
°C
25°C
75°C
1
0.1
0
10
20
30
IC, COLLECTOR CURRENT (mA)
40
50
Figure 6. Input Voltage versus Output Current
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Rev.A 29-Dec-05
MUN5311DW Series
WEITRON
TYPICAL ELECTRICAL CHARACTERISTICS − MUN5311DW1T1 PNP TRANSISTOR
1000
VCE(sat) , COLLECTOR VOLTAGE (VOLTS)
1
TA
hFE , DC CURRENT GAIN (NORMALIZED)
IC/IB = 10
°C
25°C
75°C
IC, COLLECTOR CURRENT (mA)
TA
−25°C
1
10
IC, COLLECTOR CURRENT (mA)
Figure 7. VCE(sat) versus IC
f = 1 MHz
lE = 0 V
TA = 25°C
IC, COLLECTOR CURRENT (mA)
Cob , CAPACITANCE (pF)
100
2
1
0
0
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
V in , INPUT VOLTAGE (VOLTS)
25°C
75°C
TA
10
°C
1
VO = 5 V
50
0
Vin, INPUT VOLTAGE (VOLTS)
Figure 9. Output Capacitance
100
100
Figure 8. DC Current Gain
4
3
°C
25°C
100
10
50
VCE = 10 V
Figure 10. Output Current versus Input
Voltage
VO = 0.2 V
TA
10
°C
75°C
25°C
1
0
IC, COLLECTOR CURRENT (mA)
Figure 11. Input Voltage versus Output Current
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Rev.A 29-Dec-05
MUN5311DW Series
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1000
1
hFE, DC CURRENT GAIN (NORMALIZED)
VCE(sat) , COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS − MUN5312DW1T1 NPN TRANSISTOR
IC/IB = 10
TA
0.1
25°C
°C
75°C
0.01
0.001
0
20
1
Figure 13. DC Current Gain
100
3
2
1
0
100
10
Figure 12. VCE(sat) versus IC
IC, COLLECTOR CURRENT (mA)
Cob , CAPACITANCE (pF)
100
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
IE = 0 V
TA = 25°C
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
50
°C
25°C
−25°C
IC, COLLECTOR CURRENT (mA)
4
0
TA
10
50
40
VCE = 10 V
75°C
25°C
TA
10
°C
1
0.1
0.01
0.001
Figure 14. Output Capacitance
VO = 5 V
0
2
4
6
Vin, INPUT VOLTAGE (VOLTS)
8
10
Figure 15. Output Current versus Input Voltage
100
V in , INPUT VOLTAGE (VOLTS)
VO = 0.2 V
TA
°C
10
25°C
75°C
1
0.1
0
10
20
30
40
50
IC, COLLECTOR CURRENT (mA)
Figure 16. Input Voltage versus Output
Current
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Rev.A 29-Dec-05
MUN5311DW Series
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10
1000
IC/IB = 10
1
hFE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS − MUN5312DW1T1 PNP TRANSISTOR
25°C
TA
°C
75°C
100
Figure 17. VCE(sat) versus IC
Figure 18. DC Current Gain
100
IC, COLLECTOR CURRENT (mA)
3
2
1
25°C
10
1
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
lE = 0 V
TA = 25°C
°C
−25°C
100
IC, COLLECTOR CURRENT (mA)
4
Cob , CAPACITANCE (pF)
TA
10
0.01
VCE = 10 V
75°C
10
25°C
TA
°C
1
VO = 5 V
0
0
50
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
Vin, INPUT VOLTAGE (VOLTS)
Figure 19. Output Capacitance
V in , INPUT VOLTAGE (VOLTS)
100
Figure 20. Output Current versus Input Voltage
VO = 0.2 V
TA
°C
10
25°C
75°C
1
0
IC, COLLECTOR CURRENT (mA)
Figure 21. Input Voltage versus Output Current
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Rev.A 29-Dec-05
MUN5311DW Series
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10
1000
IC/IB = 10
1
TA
25°C
°C
75°C
0.1
0.01
0
hFE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS − MUN5313DW1T1 NPN TRANSISTOR
TA
100
10
1
10
IC, COLLECTOR CURRENT (mA)
Figure 22. VCE(sat) versus IC
1
0.4
0.2
0
25°C
75°C
IC, COLLECTOR CURRENT (mA)
Cob, CAPACITANCE (pF)
100
0.6
0
100
Figure 23. DC Current Gain
f = 1 MHz
IE = 0 V
TA = 25°C
0.8
°C
25°C
−25°C
50
20
40
IC, COLLECTOR CURRENT (mA)
VCE = 10 V
50
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
TA
10
°C
1
0.1
0.01
0.001
Figure 24. Output Capacitance
VO = 5 V
0
2
4
6
Vin, INPUT VOLTAGE (VOLTS)
8
10
Figure 25. Output Current versus Input Voltage
100
V in , INPUT VOLTAGE (VOLTS)
VO = 0.2 V
TA
°C
10
25°C
75°C
1
0.1
0
10
20
30
40
50
IC, COLLECTOR CURRENT (mA)
Figure 26. Input Voltage versus Output Current
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Rev.A 29-Dec-05
MUN5311DW Series
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TYPICAL ELECTRICAL CHARACTERISTICS − MUN5313DW1T1 PNP TRANSISTOR
VCE(sat) , COLLECTOR VOLTAGE (VOLTS)
1
1000
TA
°C
hFE , DC CURRENT GAIN (NORMALIZED)
IC/IB = 10
25°C
75°C
0
10
20
30
IC, COLLECTOR CURRENT (mA)
TA
25°C
−25°C
100
10
40
1
Figure 27. VCE(sat) versus IC
1
IC, COLLECTOR CURRENT (mA)
Cob , CAPACITANCE (pF)
100
0.6
0.4
0.2
0
0
50
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
TA
°C
25°C
−25°C
10
1
VO = 5 V
10
Vin, INPUT VOLTAGE (VOLTS)
Figure 30. Output Current versus Input Voltage
100
V in , INPUT VOLTAGE (VOLTS)
100
0
Figure 29. Output Capacitance
VO = 0.2 V
TA
10
10
IC, COLLECTOR CURRENT (mA)
Figure 28. DC Current Gain
f = 1 MHz
lE = 0 V
TA = 25°C
0.8
°C
°C
25°C
75°C
1
IC, COLLECTOR CURRENT (mA)
Figure 31. Input Voltage versus Output Current
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Rev.A 29-Dec-05
MUN5311DW Series
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1
300
IC/IB = 10
TA
hFE, DC CURRENT GAIN (NORMALIZED)
VCE(sat) , COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS − MUN5314DW1T1 NPN TRANSISTOR
°C
25°C
0.1
75°C
0.01
0.001
0
20
40
60
IC, COLLECTOR CURRENT (mA)
TA
VCE = 10
250
25°C
200
−25°C
150
100
50
0
80
2
1
4
6
Figure 32. VCE(sat) versus IC
90 100
100
f = 1 MHz
lE = 0 V
TA = 25°C
3
TA
IC, COLLECTOR CURRENT (mA)
3.5
Cob , CAPACITANCE (pF)
8 10 15 20 40 50 60 70 80
IC, COLLECTOR CURRENT (mA)
Figure 33. DC Current Gain
4
2.5
2
1.5
1
0.5
0
°C
0
2
4
6 8 10 15 20 25 30 35
VR, REVERSE BIAS VOLTAGE (VOLTS)
40
45
25°C
−25°C
10
VO = 5 V
1
50
°C
Figure 34. Output Capacitance
0
2
4
6
Vin, INPUT VOLTAGE (VOLTS)
8
10
Figure 35. Output Current versus Input Voltage
10
V in , INPUT VOLTAGE (VOLTS)
VO = 0.2 V
TA
°C
25°C
75°C
1
0.1
0
10
20
30
IC, COLLECTOR CURRENT (mA)
40
50
Figure 36. Input Voltage versus Output Current
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Rev.A 29-Dec-05
MUN5311DW Series
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180
1
IC/IB = 10
TA
hFE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS − MUN5314DW1T1 PNP TRANSISTOR
°C
25°C
0.1
75°C
0.01
0.001
0
20
40
60
IC, COLLECTOR CURRENT (mA)
TA
VCE = 10 V
160
25°C
140
−25°C
120
100
80
60
40
20
0
80
1
2
4
6
Figure 37. VCE(sat) versus IC
80 90 100
100
TA
3.5
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
lE = 0 V
TA = 25°C
4
Cob , CAPACITANCE (pF)
8 10 15 20 40 50 60 70
IC, COLLECTOR CURRENT (mA)
Figure 38. DC Current Gain
4.5
3
2.5
2
1.5
1
0.5
0
°C
0
2
4
6 8 10 15 20 25 30 35 40
VR, REVERSE BIAS VOLTAGE (VOLTS)
45
25°C
−25°C
10
VO = 5 V
1
50
°C
0
Figure 39. Output Capacitance
2
4
6
Vin, INPUT VOLTAGE (VOLTS)
8
10
Figure 40. Output Current versus Input Voltage
10
V in , INPUT VOLTAGE (VOLTS)
VO = 0.2 V
25°C
75°C
TA
°C
1
0.1
0
10
20
30
IC, COLLECTOR CURRENT (mA)
40
50
Figure 41. Input Voltage versus Output Current
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Rev.A 29-Dec-05
MUN5311DW Series
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1
1000
IC/IB = 10
75°C
0.1
−25°C
25°C
0.01
0.001
0
20
40
30
10
IC, COLLECTOR CURRENT (mA)
TA = −25°C
100
10
1
50
25°C
1
10
IC, COLLECTOR CURRENT (mA)
Figure 42. VCE(sat) versus IC
f = 1 MHz
IE = 0 V
TA = 25°C
IC, COLLECTOR CURRENT (mA)
Cob, CAPACITANCE (pF)
100
10
8
6
4
75°C
10
25°C
1
TA = −25°C
0.1
0.01
2
0
5
100
Figure 43. DC Current Gain
12
0
VCE = 10 V
75°C
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5315DW1T1 NPN TRANSISTOR
10 15 20 25 30 35 40 45
VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 44. Output Capacitance
50
0.001
VO = 5 V
0
1
2
3
4
5
6
7
8
Vin, INPUT VOLTAGE (VOLTS)
9
10
Figure 45. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)
10
TA = −25°C
1
75°C
25°C
VO = 0.2 V
0.1
0
10
20
30
40
IC, COLLECTOR CURRENT (mA)
50
Figure 46. Input Voltage versus Output Current
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Rev.A 29-Dec-05
MUN5311DW Series
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1
1000
IC/IB = 10
75°C
0.1
−25°C
25°C
0.01
0.001
0
20
40
30
10
IC, COLLECTOR CURRENT (mA)
25°C
10
1
50
TA = −25°C
100
1
10
IC, COLLECTOR CURRENT (mA)
Figure 47. VCE(sat) versus IC
100
IC, COLLECTOR CURRENT (mA)
4
Cob, CAPACITANCE (pF)
100
Figure 48. DC Current Gain
4.5
f = 1 MHz
IE = 0 V
TA = 25°C
3.5
3
2.5
2
1.5
1
75°C
10
25°C
1
TA = −25°C
0.1
0.01
0.5
0
VCE = 10 V
75°C
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5315DW1T1 PNP TRANSISTOR
0
5
10 15 20 25 30 35 40 45
VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 49. Output Capacitance
50
0.001
VO = 5 V
0
1
2
3
4
5
6
7
8
Vin, INPUT VOLTAGE (VOLTS)
9
10
Figure 50. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)
10
TA = −25°C
1
25°C
75°C
VO = 0.2 V
0.1
0
10
20
30
40
IC, COLLECTOR CURRENT (mA)
50
Figure 51. Input Voltage versus Output Current
WEITRON
http://www.weitron.com.tw
14/29
Rev.A 29-Dec-05
MUN5311DW Series
WEITRON
1
1000
IC/IB = 10
75°C
0.1
−25°C
25°C
0.01
0.001
0
20
40
30
10
IC, COLLECTOR CURRENT (mA)
25°C
10
1
50
TA = −25°C
100
1
10
IC, COLLECTOR CURRENT (mA)
Figure 52. VCE(sat) versus IC
IC, COLLECTOR CURRENT (mA)
Cob, CAPACITANCE (pF)
100
f = 1 MHz
IE = 0 V
TA = 25°C
10
8
6
4
75°C
10
25°C
1
TA = −25°C
0.1
0.01
2
0
5
10 15 20 25 30 35 40 45
VR, REVERSE BIAS VOLTAGE (VOLTS)
100
Figure 53. DC Current Gain
12
0
VCE = 10 V
75°C
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5316DW1T1 NPN TRANSISTOR
50
0.001
Figure 54. Output Capacitance
VO = 5 V
0
1
2
3
4
5
6
7
8
Vin, INPUT VOLTAGE (VOLTS)
9
10
Figure 55. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)
10
TA = −25°C
1
75°C
25°C
VO = 0.2 V
0.1
0
10
20
30
40
IC, COLLECTOR CURRENT (mA)
50
Figure 56. Input Voltage versus Output Current
WEITRON
http://www.weitron.com.tw
15/29
Rev.A 29-Dec-05
MUN5311DW Series
WEITRON
1
1000
IC/IB = 10
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5316DW1T1 PNP TRANSISTOR
75°C
0.1
−25°C
25°C
0.01
0.001
0
20
40
30
10
IC, COLLECTOR CURRENT (mA)
TA = −25°C
25°C
100
10
1
50
1
10
IC, COLLECTOR CURRENT (mA)
Figure 57. VCE(sat) versus IC
100
Cob, CAPACITANCE (pF)
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
IE = 0 V
TA = 25°C
3.5
3
2.5
2
1.5
1
75°C
10
25°C
TA = −25°C
1
0.1
0.01
0.5
0
0
5
100
Figure 58. DC Current Gain
4.5
4
VCE = 10 V
75°C
10 15 20 25 30 35 40 45
VR, REVERSE BIAS VOLTAGE (VOLTS)
50
0.001
Figure 59. Output Capacitance
VO = 5 V
0
1
2
3
4
5
6
7
8
Vin, INPUT VOLTAGE (VOLTS)
9
10
Figure 60. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)
10
TA = −25°C
1
75°C
25°C
VO = 0.2 V
0.1
0
10
20
30
40
IC, COLLECTOR CURRENT (mA)
50
Figure 61. Input Voltage versus Output Current
WEITRON
http://www.weitron.com.tw
16/29
Rev.A 29-Dec-05
MUN5311DW Series
WEITRON
1
1000
VCE = 10 V
IC/IB = 10
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5330DW1T1 NPN TRANSISTOR
75°C
0.1
−25°C
25°C
0.01
0.001
0
5
10
15
20
25
IC, COLLECTOR CURRENT (mA)
100
75°C
10
25°C
TA = −25°C
1
30
1
10
IC, COLLECTOR CURRENT (mA)
Figure 62. VCE(sat) versus IC
Figure 63. DC Current Gain
10
75°C
10
Vin, INPUT VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA)
100
25°C
1
TA = −25°C
0.1
0.01
0.001
100
VO = 5 V
0
1
2
3
4
5
6
7
8
Vin, INPUT VOLTAGE (VOLTS)
9
10
TA = −25°C
1
75°C
25°C
VO = 0.2 V
0.1
0
WEITRON
25
Figure 65. Input Voltage versus Output Current
Figure 64. Output Current versus Input Voltage
http://www.weitron.com.tw
5
10
15
20
IC, COLLECTOR CURRENT (mA)
17/29
Rev.A 29-Dec-05
MUN5311DW Series
WEITRON
100
1
IC/IB = 10
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5330DW1T1 PNP TRANSISTOR
75°C
0.1
−25°C
25°C
0.01
75°C
10
25°C
TA = −25°C
VCE = 10 V
0.001
0
10
20
40
30
IC, COLLECTOR CURRENT (mA)
1
50
1
10
IC, COLLECTOR CURRENT (mA)
Figure 66. VCE(sat) versus IC
Figure 67. DC Current Gain
4.5
Cob, CAPACITANCE (pF)
IC, COLLECTOR CURRENT (mA)
100
4
f = 1 MHz
IE = 0 V
TA = 25°C
3.5
3
2.5
2
1.5
1
75°C
10
25°C
1
TA = −25°C
0.1
0.01
0.5
0
0
5
100
10 15 20 25 30 35 40 45
VR, REVERSE BIAS VOLTAGE (VOLTS)
50
0.001
Figure 68. Output Capacitance
VO = 5 V
0
1
2
7
8
3
4
5
6
Vin, INPUT VOLTAGE (VOLTS)
9
10
Figure 69. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)
10
TA = −25°C
75°C
1
25°C
VO = 0.2 V
0.1
0
10
20
30
40
IC, COLLECTOR CURRENT (mA)
50
Figure 70. Input Voltage versus Output Current
WEITRON
http://www.weitron.com.tw
18/29
Rev.A 29-Dec-05
MUN5311DW Series
WEITRON
1
1000
VCE = 10 V
IC/IB = 10
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5331DW1T1 NPN TRANSISTOR
75°C
0.1
−25°C
25°C
0.01
0.001
0
5
10
15
20
25
IC, COLLECTOR CURRENT (mA)
100
75°C
10
1
30
TA = −25°C
1
10
IC, COLLECTOR CURRENT (mA)
Figure 71. VCE(sat) versus IC
100
IC, COLLECTOR CURRENT (mA)
Cob, CAPACITANCE (pF)
100
Figure 72. DC Current Gain
12
f = 1 MHz
IE = 0 V
TA = 25°C
10
8
6
4
10 75°C
25°C
1
TA = −25°C
0.1
0.01
2
0
25°C
0
5
10 15 20 25 30 35 40 45
VR, REVERSE BIAS VOLTAGE (VOLTS)
50
0.001
Figure 73. Output Capacitance
VO = 5 V
0
1
2
3
4
5
6
7
8
Vin, INPUT VOLTAGE (VOLTS)
9
10
Figure 74. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)
10
TA = −25°C
1
75°C
25°C
VO = 0.2 V
0.1
0
5
10
15
20
IC, COLLECTOR CURRENT (mA)
25
Figure 75. Input Voltage versus Output Current
WEITRON
http://www.weitron.com.tw
19/29
Rev.A 29-Dec-05
MUN5311DW Series
WEITRON
100
1
IC/IB = 10
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5331DW1T1 PNP TRANSISTOR
75°C
0.1
−25°C
25°C
0.01
TA = −25°C
VCE = 10 V
0.001
0
10
20
40
30
IC, COLLECTOR CURRENT (mA)
1
50
1
10
IC, COLLECTOR CURRENT (mA)
Figure 76. VCE(sat) versus IC
IC, COLLECTOR CURRENT (mA)
100
4
f = 1 MHz
IE = 0 V
TA = 25°C
3.5
3
2.5
2
1.5
1
75°C
10
25°C
1
TA = −25°C
0.1
0.01
0.5
0
100
Figure 77. DC Current Gain
4.5
Cob, CAPACITANCE (pF)
25°C
75°C
10
0
5
10 15 20 25 30 35 40 45
VR, REVERSE BIAS VOLTAGE (VOLTS)
50
0.001
Figure 78. Output Capacitance
VO = 5 V
0
1
2
7
8
3
4
5
6
Vin, INPUT VOLTAGE (VOLTS)
9
10
Figure 79. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)
10
TA = −25°C
75°C
1
25°C
VO = 0.2 V
0.1
0
10
20
30
40
IC, COLLECTOR CURRENT (mA)
50
Figure 80. Input Voltage versus Output Current
WEITRON
http://www.weitron.com.tw
20/29
Rev.A 29-Dec-05
MUN5311DW Series
WEITRON
1
1000
VCE = 10 V
IC/IB = 10
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5332DW1T1 NPN TRANSISTOR
75°C
0.1
−25°C
25°C
0.01
0.001
0
20
40
30
10
IC, COLLECTOR CURRENT (mA)
25°C
10
TA = −25°C
1
50
75°C
100
1
10
IC, COLLECTOR CURRENT (mA)
Figure 81. VCE(sat) versus IC
Figure 82. DC Current Gain
100
IC, COLLECTOR CURRENT (mA)
Cob, CAPACITANCE (pF)
12
f = 1 MHz
IE = 0 V
TA = 25°C
10
8
6
4
75°C
10
25°C
1
TA = −25°C
0.1
0.01
2
0
0
5
10 15 20 25 30 35 40 45
VR, REVERSE BIAS VOLTAGE (VOLTS)
100
50
0.001
Figure 83. Output Capacitance
VO = 5 V
0
1
2
3
4
5
6
7
8
Vin, INPUT VOLTAGE (VOLTS)
9
10
Figure 84. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)
10
TA = −25°C
1
75°C
25°C
VO = 0.2 V
0.1
0
10
20
30
40
IC, COLLECTOR CURRENT (mA)
50
Figure 85. Input Voltage versus Output Current
WEITRON
http://www.weitron.com.tw
21/29
Rev.A 29-Dec-05
MUN5311DW Series
WEITRON
1000
1
VCE = 10 V
IC/IB = 10
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5332DW1T1 PNP TRANSISTOR
75°C
0.1
−25°C
25°C
0.01
0.001
0
10
20
40
30
IC, COLLECTOR CURRENT (mA)
75°C
100
TA = −25°C
10
1
50
1
10
IC, COLLECTOR CURRENT (mA)
Figure 86. VCE(sat) versus IC
100
IC, COLLECTOR CURRENT (mA)
Cob, CAPACITANCE (pF)
100
Figure 87. DC Current Gain
6
f = 1 MHz
IE = 0 V
TA = 25°C
5
4
3
2
75°C
10
25°C
1
TA = −25°C
0.1
0.01
1
0
25°C
0
5
10 15 20 25 30 35 40 45
VR, REVERSE BIAS VOLTAGE (VOLTS)
50
0.001
Figure 88. Output Capacitance
VO = 5 V
0
1
2
3
4
5
6
7
8
Vin, INPUT VOLTAGE (VOLTS)
9
10
Figure 89. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)
10
TA = −25°C
1
75°C
25°C
VO = 0.2 V
0.1
0
10
20
30
40
IC, COLLECTOR CURRENT (mA)
50
Figure 90. Input Voltage versus Output Current
WEITRON
http://www.weitron.com.tw
22/29
Rev.A 29-Dec-05
MUN5311DW Series
WEITRON
1000
1
VCE = 10 V
IC/IB = 10
0.1
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5333DW1T1 NPN TRANSISTOR
75°C
−25°C
25°C
0.01
0.001
0
5
10
15
25
20
IC, COLLECTOR CURRENT (mA)
75°C
TA = −25°C
100
10
1
30
1
10
IC, COLLECTOR CURRENT (mA)
Figure 91. VCE(sat) versus IC
Cob, CAPACITANCE (pF)
IC, COLLECTOR CURRENT (mA)
100
f = 1 MHz
IE = 0 V
TA = 25°C
3
2.5
2
1.5
1
75°C
10
25°C
1
TA = −25°C
0.1
0.01
0.5
0
0
5
100
Figure 92. DC Current Gain
4
3.5
25°C
10 15 20 25 30 35 40 45
VR, REVERSE BIAS VOLTAGE (VOLTS)
50
0.001
Figure 93. Output Capacitance
VO = 5 V
0
1
2
7
8
3
4
5
6
Vin, INPUT VOLTAGE (VOLTS)
9
10
Figure 94. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)
10
TA = −25°C
1
75°C
25°C
VO = 0.2 V
0.1
0
5
10
15
20
IC, COLLECTOR CURRENT (mA)
25
Figure 95. Input Voltage versus Output Current
WEITRON
http://www.weitron.com.tw
23/29
Rev.A 29-Dec-05
MUN5311DW Series
WEITRON
1
1000
VCE = 10 V
IC/IB = 10
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5333DW1T1 PNP TRANSISTOR
75°C
0.1
−25°C
25°C
0.01
0.001
0
20
40
30
10
IC, COLLECTOR CURRENT (mA)
75°C
100
1
10
IC, COLLECTOR CURRENT (mA)
Figure 96. VCE(sat) versus IC
Cob, CAPACITANCE (pF)
IC, COLLECTOR CURRENT (mA)
100
f = 1 MHz
IE = 0 V
TA = 25°C
6
5
4
3
2
75°C
10
25°C
1
0.1
TA = −25°C
0.01
1
0
0
5
100
Figure 97. DC Current Gain
8
7
25°C
10
1
50
TA = −25°C
10 15 20 25 30 35 40 45
VR, REVERSE BIAS VOLTAGE (VOLTS)
50
0.001
Figure 98. Output Capacitance
VO = 5 V
0
1
2
3
4
5
6
7
8
Vin, INPUT VOLTAGE (VOLTS)
9
10
Figure 99. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)
10
TA = −25°C
1
75°C
25°C
VO = 0.2 V
0.1
0
10
20
30
40
IC, COLLECTOR CURRENT (mA)
50
Figure 100. Input Voltage versus Output
Current
WEITRON
http://www.weitron.com.tw
24/29
Rev.A 29-Dec-05
MUN5311DW Series
WEITRON
1
1000
VCE = 10 V
IC/IB = 10
75°C
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5334DW1T1 NPN TRANSISTOR
75°C
0.1
−25°C
25°C
0.01
0.001
0
20
40
30
10
IC, COLLECTOR CURRENT (mA)
100
1
10
IC, COLLECTOR CURRENT (mA)
Figure 101. VCE(sat) versus IC
100
IC, COLLECTOR CURRENT (mA)
Cob, CAPACITANCE (pF)
100
Figure 102. DC Current Gain
3.5
f = 1 MHz
IE = 0 V
TA = 25°C
3
2.5
2
1.5
1
75°C
10
25°C
1
0.1
TA = −25°C
0.01
0.5
0
25°C
10
1
50
TA = −25°C
0
5
10 15 20 25 30 35 40 45
VR, REVERSE BIAS VOLTAGE (VOLTS)
50
0.001
VO = 5 V
0
Figure 103. Output Capacitance
1
2
3
4
5
6
7
8
Vin, INPUT VOLTAGE (VOLTS)
9
10
Figure 104. Output Current versus Input
Voltage
Vin, INPUT VOLTAGE (VOLTS)
100
10
TA = −25°C
1
75°C
25°C
VO = 0.2 V
0.1
0
40
10
20
30
IC, COLLECTOR CURRENT (mA)
50
Figure 105. Input Voltage versus Output
Current
WEITRON
http://www.weitron.com.tw
25/29
Rev.A 29-Dec-05
MUN5311DW Series
WEITRON
1000
1
VCE = 10 V
IC/IB = 10
0.1
75°C
−25°C
25°C
0.01
0.001
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5334DW1T1 PNP TRANSISTOR
0
5
10
15
25
20
IC, COLLECTOR CURRENT (mA)
30
75°C
100
WEITRON
25°C
10
1
Figure 106. VCE(sat) versus IC
http://www.weitron.com.tw
TA = −25°C
1
10
IC, COLLECTOR CURRENT (mA)
100
Figure 107. DC Current Gain
26/29
Rev.A 29-Dec-05
MUN5311DW Series
WEITRON
1
1000
VCE = 10 V
IC/IB = 10
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5335DW1T1 NPN TRANSISTOR
75°C
0.1
−25°C
25°C
0.01
0.001
0
20
40
30
10
IC, COLLECTOR CURRENT (mA)
75°C
100
1
10
IC, COLLECTOR CURRENT (mA)
Figure 108. VCE(sat) versus IC
IC, COLLECTOR CURRENT (mA)
Cob, CAPACITANCE (pF)
100
f = 1 MHz
IE = 0 V
TA = 25°C
8
6
4
75°C
10
25°C
1
TA = −25°C
0.1
0.01
2
0
0
5
10 15 20 25 30 35 40 45
VR, REVERSE BIAS VOLTAGE (VOLTS)
100
Figure 109. DC Current Gain
12
10
25°C
10
1
50
TA = −25°C
50
0.001
Figure 110. Output Capacitance
VO = 5 V
0
1
2
3
4
5
6
7
8
Vin, INPUT VOLTAGE (VOLTS)
9
10
Figure 111. Output Current versus Input
Voltage
Vin, INPUT VOLTAGE (VOLTS)
10
TA = −25°C
1
75°C
25°C
VO = 0.2 V
0.1
0
10
20
30
40
IC, COLLECTOR CURRENT (mA)
50
Figure 112. Input Voltage versus Output
Current
WEITRON
http://www.weitron.com.tw
27/29
Rev.A 29-Dec-05
MUN5311DW Series
WEITRON
1000
1
VCE = 10 V
IC/IB = 10
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5335DW1T1 PNP TRANSISTOR
75°C
0.1
−25°C
25°C
0.01
0.001
0
10
20
40
30
IC, COLLECTOR CURRENT (mA)
75°C
100
1
10
IC, COLLECTOR CURRENT (mA)
Figure 113. VCE(sat) versus IC
Cob, CAPACITANCE (pF)
IC, COLLECTOR CURRENT (mA)
100
f = 1 MHz
IE = 0 V
TA = 25°C
3.5
3
2.5
2
1.5
1
25°C
10
75°C
1
TA = −25°C
0.1
0.01
0.5
0
0
5
100
Figure 114. DC Current Gain
4.5
4
25°C
10
1
50
TA = −25°C
10 15 20 25 30 35 40 45
VR, REVERSE BIAS VOLTAGE (VOLTS)
50
0.001
VO = 5 V
0
Figure 115. Output Capacitance
1
2
3
4
5
6
7
8
Vin, INPUT VOLTAGE (VOLTS)
9
10
Figure 116. Output Current versus Input
Voltage
Vin, INPUT VOLTAGE (VOLTS)
10
75°C
1
25°C
TA = −25°C
VO = 0.2 V
0.1
0
10
20
30
40
IC, COLLECTOR CURRENT (mA)
50
Figure 117. Input Voltage versus Output
Current
WEITRON
http://www.weitron.com.tw
28/29
Rev.A 29-Dec-05
MUN5311DW Series
WEITRON
SOT-363 Package Outline Dimensions
Unit:mm
A
6
5
SOT-363
4
B C
1
2
D
3
E
H
K
J
WEITRON
http://www.weitron.com.tw
L
M
29/29
Dim
A
B
C
D
E
H
J
K
L
M
Min
Max
0.10
0.30
1.15
1.35
2.00
2.20
0.65 REF
0.30
0.40
1.80
2.20
0.10
0.80
1.10
0.25
0.40
0.10
0.25
Rev.A 29-Dec-05