TEL BAV70T Plastic-encapsulated diode Datasheet

Transys
Electronics
L I M I T E D
SOT-523 Plastic-Encapsulated Diodes
BAS16T/BAW56T/BAV70T/BAV99T
SOT-523
SWITCHING DIODE
FEATURES
Power dissipation
150
PD:
mW (Tamb=25℃)
Forward Current
75 m A
IF:
Reverse Voltage
85
V
VR:
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
BAS16T Marking: A2
BAW56T Marking: JD
BAV70T Marking: JJ
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Reverse breakdown voltage
Reverse voltage
Forward
Diode
Symbol
BAV99T Marking: JE
unless otherwise specified)
Test
conditions
MIN
MAX
UNIT
V(BR)
IR= 100µA
IR1
VR=75V
2
µA
IR2
VR=25V
0.03
µA
IF=1mA
715
IF=10mA
855
IF=50mA
1000
IF=150mA
1250
VR=0V, f=1MHz
1.5
pF
4
nS
85
V
leakage current
voltage
capacitance
Reverse recovery time
VF
CD
t
rr
mV
Typical Characteristics
BAS16T/BAW56T/BAV70T/BAV99T
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