PHOTO FET OPTOCOUPLERS H11F1 H11F2 H11F3 PACKAGE 6 SCHEMATIC ANODE 1 6 CATHODE 2 5 3 4 OUTPUT TERM. 6 1 1 OUTPUT TERM. 6 1 DESCRIPTION The H11F series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photodetector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low level AC and DC analog signals. The H11F series devices are mounted in dual in-line packages. FEATURES As a remote variable resistor • ≤ 100Ω to ≥ 300 MΩ • ≥ 99.9% linearity • ≤ 15 pF shunt capacitance • ≥ 100 GΩ I/O isolation resistance As an analog switch • Extremely low offset voltage • 60 Vpk-pk signal capability • No charge injection or latch-up • ton, toff ≤ 15 µS • UL recognized (File #E90700) • VDE recognized (File #E94766) – Ordering option ‘300’ (e.g. H11F1.300) APPLICATIONS As a variable resistor – • Isolated variable attenuator • Automatic gain control • Active filter fine tuning/band switching As an analog switch – • Isolated sample and hold circuit • Multiplexed, optically isolated A/D conversion © 2003 Fairchild Semiconductor Corporation Page 1 of 10 3/19/03 PHOTO FET OPTOCOUPLERS H11F1 H11F2 H11F3 Absolute Maximum Ratings (TA = 25°C unless otherwise specified) Parameter Symbol Device Value Units Storage Temperature TSTG All -55 to +150 °C Operating Temperature TOPR All -55 to +100 °C Lead Solder Temperature TSOL All 260 for 10 sec °C Continuous Forward Current IF All 60 mA Reverse Voltage VR All 5 V IF(pk) All 1 A PD All PD All TOTAL DEVICE EMITTER Forward Current - Peak (10 µs pulse, 1% duty cycle) LED Power Dissipation 25°C Ambient Derate Linearly From 25°C 100 mW 1.33 mW/°C 300 mW DETECTOR Detector Power Dissipation @ 25°C Derate linearly from 25°C Breakdown Voltage (either polarity) BV4-6 Continuous Detector Current (either polarity) 4.0 mW/°C H11F1, H11F2 ±30 V H11F3 ±15 V All ±100 mA I4-6 ELECTRICAL CHARACTERISTICS (TA = 25°C Unless otherwise specified.) INDIVIDUAL COMPONENT CHARACTERISTICS Parameter Test Conditions Symbol Device IF = 16 mA VF All VR = 5 V IR All V = 0 V, f = 1.0 MHz CJ All I4-6 = 10µA, IF = 0 BV4-6 Min Typ* Max Unit 1.3 1.75 V 10 µA EMITTER Input Forward Voltage Reverse Leakage Current Capacitance 50 pF OUTPUT DETECTOR Breakdown Voltage Either Polarity Off-State Dark Current Off-State Resistance Capacitance V4-6 = 15 V, IF = 0 V4-6 = 15 V, IF = 0, TA = 100°C I4-6 H11F1, H11F2 30 H11F3 15 All 50 nA All 50 µA V4-6 = 15 V, IF = 0 R4-6 All V4-6 = 15 V, IF = 0, f = 1MHz C4-6 All © 2003 Fairchild Semiconductor Corporation Page 2 of 10 V MΩ 300 15 pF 3/19/03 PHOTO FET OPTOCOUPLERS H11F1 H11F2 H11F3 ISOLATION CHARACTERISTICS Parameter Input-Output Isolation Voltage Isolation Resistance Isolation Capacitance Test Conditions Symbol Min Typ* Max Units f = 60Hz, t = 1 min. VISO 5300 Vac (rms) VI-O = 500 VDC RISO 1011 Ω VI-O = 0, f = 1.0 MHz CISO 2 pF TRANSFER CHARACTERISTICS (TA = 25°C Unless otherwise specified.) DC Characteristics Test Conditions Symbol On-State Resistance IF = 16 mA, I4-6 = 100 µA R4-6 On-State Resistance Resistance, non-linearity and assymetry AC Characteristics IF = 16 mA, I6-4 = 100 µA R6-4 IF = 16mA, I4-6 = 25 µA RMS, f = 1kHz Device Min Typ* Max Units H11F1 200 H11F2 330 H11F3 470 H11F1 200 H11F2 330 H11F3 470 All 0.1 % Max Units Symbol Device Turn-On Time RL = 50Ω, IF = 16mA, V4-6 = 5V ton All 25 µS Turn-Off Time RL = 50Ω, IF = 16mA, V4-6 = 5V toff All 25 µS Page 3 of 10 Typ* Ω Test Conditions © 2003 Fairchild Semiconductor Corporation Min Ω 3/19/03 PHOTO FET OPTOCOUPLERS H11F1 H11F2 H11F3 Figure 1. Resistance vs. Input Current Figure 2. Output Characteristics I46 - OUTPUT CURRENT (µA) 10 1 600 IF = 14mA 400 IF = 10mA IF = 6mA 200 IF = 6mA -200 IF = 10mA -400 IF = 14mA IF = 18mA -800 1 10 -0.2 100 -0.1 Figure 3. LED Forward Voltage vs. Forward Current 0.2 Figure 4. Off-state Current vs. Ambient Temperature 10000 2.0 NORMALIZED TO: V46 = 15V IF = 0mA TA = 25°C I46 - NORMALIZED DARK CURRENT 1.8 VF - FORWARD VOLTAGE (V) 0.1 0.0 V46 - OUTPUT VOLTAGE (V) IF - INPUT CURRENT - mA 1.6 1.4 TA = -55°C TA = 25°C 1.2 1.0 TA = 100°C 1000 100 10 0.8 1 0.1 1 10 0 100 100 80 V4-6 - MAXIMUM RMS SIGNAL VOLTAGE - mV NORMALIZED TO IF = 16mA I4-6 = 25µA RMS TA = 25˚C 2 n dia Me ice v De Observed Range 1K 1 0.8 0.6 0.4 -50 -25 0 25 50 75 TA - AMBIENT TEMPERATURE - °C © 2003 Fairchild Semiconductor Corporation 40 80 60 100 Figure 6. Region of Linear Resistance Figure 5. Resistance vs. Temperature 3 20 TA - AMBIENT TEMPERATURE (°C) IF - LED FORWARD CURRENT - mA r(on) - NORMALIZED RESISTANCE IF = 2mA IF = 2mA 0 -600 Normalized to: IF = 16 mA I46 = 5 µA RMS 0.1 IF = 18mA 60 60 40 40 20 20 10 8 10 8 6 6 MAXIMUM RMS CURRENT 4 4 2 1 100 100 100 80 MAXIMUM RMS VOLTAGE 2 1000 10K I4-6 - MAXIMUM RMS SIGNAL CURRENT - µA r(on) - Normalized Resistance 800 100K r(on) RESISTANCE - Ω Page 4 of 10 3/19/03 PHOTO FET OPTOCOUPLERS H11F1 H11F2 H11F3 Figure 7. Resistive non-linearity vs. D.C. Bias ∆r(on) - CHANGE IN RESISTANCE – % 5 4 3 2 I4-6 = 10 µA RMS r(on) = 200 Ω 1 0 1 50 100 150 200 250 300 350 V4-6 - D.C. BIAS VOLTAGE - mA © 2003 Fairchild Semiconductor Corporation Page 5 of 10 3/19/03 PHOTO FET OPTOCOUPLERS H11F1 H11F2 H11F3 TYPICAL APPLICATIONS AS A VARIABLE RESISTOR AS AN ANALOG SIGNAL SWITCH ISOLATED VARIABLE ATTENUATORS ISOLATED SAMPLE AND HOLD CIRCUIT 500K + VIN VOUT VIN VIN 50Ω - VOUT VIN H11F1 H11F1 C IF IF IF VOUT H11F1 VOUT t IF LOW FREQUENCY HIGH FREQUENCY @10KHz DYNAMIC RANGE ≈ 70db FOR 0 ≤ IF ≤ 30mA @1MHz DYNAMIC RANGE ≈ 50db FOR 0 ≤ IF ≤ 30mA Distortion free attenuation of low level A.C. signals is accomplished by varying the IRED current, IF Note the wide dynamic range and absence of coupling capacitors; D.C. level shifting or parasitic feedback to the controlling function. AUTOMATIC GAIN CONTROL Accuracy and range are improved over conventional FET switches because the H11F has no charge injection from the control signal. The H11F also provides switching of either polarity input signal up to 30V magnitude. MULTIPLEXED, OPTICALLY-ISOLATED A/D CONVERSION CALL V1 H11F1 CALL Vn DATA ACQUISITION VOUT V1 V2 + H74A1 A/D CONVERTER Vn H11F1 MSB MSB - DATA INPUT VIN LSB H74A1 500K PROCESS CONTROL LOGIC SYSTEM LSB H11F1 IF AGC SIGNAL This simple circuit provides over 70db of stable gain control for an AGC signal range of from 0 to 30mA. This basic circuit can be used to provide programmable fade and attack for electronic music. ACTIVE FILTER FINE TUNING/BAND SWITCHING IF1 The optical isolation, linearity and low offset voltage of the H11F allows the remote multiplexing of low level analog signals from such transducers as thermocouplers, Hall effect devices, strain gauges, etc. to a single A/D converter. TEST EQUIPMENT - KELVIN CONTACT POLARITY IF2 H11F1 H11F1 H11F1 H11F1 IF IF A A1 A2 C ITEST A3 PARAMETER SENSING BOARD DEVICE UNDER TEST H11F1 C & D FOR POLARITY 2 D B IF IF TO A & B FOR POLARITY 1 IF H11F1 IF1 ADJUSTS f1, IF2 ADJUSTS f2 The linearity of resistance and the low offset voltage of the H11F allows the remote tuning or band-switching of active filters without switching glitches or distortion. This schematic illustrates the concept, with current to the H11F1 IRED’s controlling the filter’s transfer characteristic. © 2003 Fairchild Semiconductor Corporation In many test equipment designs the auto polarity function uses reed relay contacts to switch the Kelvin Contact polarity. These reeds are normally one of the highest maintenance cost items due to sticking contacts and mechanical problems. The totally solid-State H11F eliminates these troubles while providing faster switching. Page 6 of 10 3/19/03 PHOTO FET OPTOCOUPLERS H11F1 H11F2 H11F3 Package Dimensions (Through Hole) Package Dimensions (Surface Mount) 0.350 (8.89) 0.330 (8.38) PIN 1 ID. 3 2 PIN 1 ID. 1 0.270 (6.86) 0.240 (6.10) SEATING PLANE 0.270 (6.86) 0.240 (6.10) 0.350 (8.89) 0.330 (8.38) 4 0.070 (1.78) 0.045 (1.14) 5 6 0.300 (7.62) TYP 0.070 (1.78) 0.045 (1.14) 0.200 (5.08) 0.135 (3.43) 0.200 (5.08) 0.165 (4.18) 0.020 (0.51) MIN 0.154 (3.90) 0.100 (2.54) 0.016 (0.41) 0.008 (0.20) 0.020 (0.51) MIN 0.022 (0.56) 0.016 (0.41) 0.100 (2.54) TYP 0.016 (0.40) 0.008 (0.20) 0.022 (0.56) 0.016 (0.41) 0° to 15° 0.016 (0.40) MIN 0.315 (8.00) MIN 0.405 (10.30) MAX 0.300 (7.62) TYP Lead Coplanarity : 0.004 (0.10) MAX 0.100 (2.54) TYP Package Dimensions (0.4” Lead Spacing) Recommended Pad Layout for Surface Mount Leadform 0.070 (1.78) 0.270 (6.86) 0.240 (6.10) 0.060 (1.52) SEATING PLANE 0.350 (8.89) 0.330 (8.38) 0.415 (10.54) 0.070 (1.78) 0.045 (1.14) 0.100 (2.54) 0.295 (7.49) 0.030 (0.76) 0.200 (5.08) 0.135 (3.43) 0.154 (3.90) 0.100 (2.54) 0.004 (0.10) MIN 0.016 (0.40) 0.008 (0.20) 0° to 15° 0.022 (0.56) 0.016 (0.41) 0.100 (2.54) TYP 0.400 (10.16) TYP NOTE All dimensions are in inches (millimeters) © 2003 Fairchild Semiconductor Corporation Page 7 of 10 3/19/03 PHOTO FET OPTOCOUPLERS H11F1 H11F2 H11F3 ORDERING INFORMATION Option Order Entry Identifier Description .S Surface Mount Lead Bend SD .SD Surface Mount; Tape and Reel W .W 0.4" Lead Spacing .300 VDE 0884 .300W VDE 0884, 0.4" Lead Spacing S 300 300W 3S 3SD .3S VDE 0884, Surface Mount .3SD VDE 0884, Surface Mount, Tape and Reel MARKING INFORMATION 1 3 H11F1 2 V XX YY K 6 4 5 Definitions 1 Fairchild logo 2 Device number 3 VDE mark (Note: Only appears on parts ordered with VDE option – See order entry table) 4 Two digit year code, e.g., ‘03’ 5 Two digit work week ranging from ‘01’ to ‘53’ 6 Assembly package code © 2003 Fairchild Semiconductor Corporation Page 8 of 10 3/19/03 PHOTO FET OPTOCOUPLERS H11F1 H11F2 H11F3 Carrier Tape Specifications 12.0 ± 0.1 4.85 ± 0.20 4.0 ± 0.1 4.0 ± 0.1 0.30 ± 0.05 Ø1.55 ± 0.05 1.75 ± 0.10 7.5 ± 0.1 13.2 ± 0.2 9.55 ± 0.20 10.30 ± 0.20 0.1 MAX 16.0 ± 0.3 Ø1.6 ± 0.1 User Direction of Feed NOTE All dimensions are in inches (millimeters) Tape and reel quantity is 1,000 units per reel Reflow Profile (Black Package, No Suffix) Temperature (°C) 300 215°C, 10–30 s 250 225 C peak 200 150 Time above 183°C, 60–150 sec 100 50 Ramp up = 3C/sec • Peak reflow temperature: 225°C (package surface temperature) • Time of temperature higher than 183°C for 60–150 seconds • One time soldering reflow is recommended 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 Time (Minute) © 2003 Fairchild Semiconductor Corporation Page 9 of 10 3/19/03 PHOTO FET OPTOCOUPLERS H11F1 H11F2 H11F3 DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. © 2003 Fairchild Semiconductor Corporation 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Page 10 of 10 3/19/03