SavantIC Semiconductor Product Specification BU2508AF Silicon NPN Power Transistors DESCRIPTION ·With TO-3PFa package ·High voltage ·High speed switching APPLICATIONS ·For use in horizontal deflection circuit of colour TV receivers PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 700 V IC Collector current (DC) 8 A ICM Collector current (Pulse) 15 A IB Base Collector current (DC) 4 A IBM Base current (Pulse) 6 A Ptot Total power dissipation 45 W TC=25 Tj Junction temperature 150 Tstg Storage temperature -65~150 SavantIC Semiconductor Product Specification BU2508AF Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0,L=25mH 700 V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 7.5 VCEsat Collector-emitter saturation voltage IC=4.5A ;IB=1.1A 1.0 V VBEsat Base-emitter saturation voltage IC=4.5A ;IB=1.7 A 1.1 V ICES Collector cut-off current VCE=BVCES; VBE=0 TC=125 1.0 2.0 mA IEBO Emitter cut-off current VEB=7.5V; IC=0 1.0 mA hFE-1 DC current gain IC=0.1A ; VCE=5V hFE-2 DC current gain IC=4.5A ; VCE=1V Collector capacitance IE=0; f=1MHz;VCB=10V CC CONDITIONS 2 MIN TYP. MAX UNIT V 13.5 V 13 4 5.5 80 7 pF SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) 3 BU2508AF