BILIN MMBT589 Pnp general purpose transistor Datasheet

Production specification
PNP General Purpose Transistor
FEATURES
z
Epitaxial planar die construction.
z
Also available in lead free version.
MMBT589
Pb
Lead-free
APPLICATIONS
z
High current surface mount PNP silicon switching transistor
for load management in portable appilications.
SOT-23
ORDERING INFORMATION
Type No.
Marking
Package Code
MMBT589
589
SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
UNIT
VCBO
collector-base voltage
-50
V
VCEO
collector-emitter voltage
-30
V
VEBO
emitter-base voltage
-5
V
IC
collector current (DC)
-1.0
A
ICM
Collector Current-Peak
-2.0
A
PC
Collector dissipation
0.31
W
RθJA
Thermal Resistance, Junction to Ambient
403
°C/W
Tj ,Tstg
junction and storage temperature
-55 to +150
°C
C118
Rev.B
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Production specification
PNP General Purpose Transistor
MMBT589
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Test
V(BR)CBO
Collector-base breakdown voltage
IC=-100μA,IE=0
-50
V
V(BR)CEO
Collector-emitter breakdown voltage
IC=-10mA,IB=0
-30
V
V(BR)EBO
Emitter-base breakdown voltage
IE=-100μA,IC=0
-5
V
ICBO
Collector cut-off current
IE = 0; VCB = -30V
-
-0.1
μA
ICES
Collector-emitter cutoff current
VCES=-30V
-
-0.1
μA
IEBO
Emitter cut-off current
IC = 0; VEB = -4V
-
-0.1
μA
DC current gain
VCE = -2V; IC= -1mA
VCE = -2V;IC = -500mA
VCE = -2V;IC = -1.0A
VCE = -2V;IC = -2.0A
100
100
80
40
300
-
VCE(sat)
collector-emitter saturation voltage
IC = -0.5A; IB = -0.05A
IC = -1.0A; IB = -0.1A
IC = -2.0A; IB = -0.2A
-
-0.25
-0.30
-0.65
V
VBE(sat)
base-emitter saturation voltage
IC = -1.0A; IB = -0.1A
-
-1.2
V
VBE(on)
Base-emitter Turn-on voltage
IC=-1.0A,VCE=-2.0V
-
-1.1
V
fT
transition frequency
IC = -100mA; VCE = -5V;
f = 100MHz
100
-
Cobo
Output capacitance
f=1.0MHz
-
15
hFE
conditions
MIN.
MAX.
UNIT
MHz
pF
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
C118
Rev.B
www.gmicroelec.com
2
Production specification
PNP General Purpose Transistor
MMBT589
C118
Rev.B
www.gmicroelec.com
3
Production specification
PNP General Purpose Transistor
MMBT589
PACKAGE OUTLINE
Plastic surface mounted package
SOT-23
SOT-23
A
E
K
B
J
D
G
Dim
Min
Max
A
2.70
3.10
B
1.10
1.50
C
1.0 Typical
D
0.4 Typical
E
0.35
0.48
G
1.80
2.00
H
0.02
0.1
J
H
C
K
0.1 Typical
2.20
2.60
All Dimensions in mm
SOLDERING FOOTPRINT
0.95
0.95
2.00
0.90
Unit : mm
0.80
PACKAGE
INFORMATION
Device
Package
Shipping
MMBT589
SOT-23
3000/Tape&Reel
C118
Rev.B
www.gmicroelec.com
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