AP4420GH/J Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower Gate Charge D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic BVDSS 35V RDS(ON) 10mΩ ID G 52A S ▼ RoHS Compliant Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G D □ The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP4420GJ) are available for low-profile applications. S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 35 V VGS Gate-Source Voltage ±20 V ID@TC=25℃ Continuous Drain Current 52 A ID@TC=100℃ Continuous Drain Current 33 A 200 A 1 IDM Pulsed Drain Current PD@TC=25℃ Total Power Dissipation 45 W Linear Derating Factor 0.35 W/℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Value Units Rthj-c Thermal Resistance Junction-case Max. 2.8 ℃/W Rthj-a Thermal Resistance Junction-ambient Max. 110 ℃/W Data & specifications subject to change without notice 200703061-1/4 AP4420GH/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. 35 - - V - 0.01 - V/℃ VGS=10V, ID=30A - - 10 mΩ VGS=4.5V, ID=15A - - 24 mΩ VDS=VGS, ID=250uA 1 - 3 V VDS=10V, ID=30A - 28 - S VDS=35V, VGS=0V - - 1 uA Drain-Source Leakage Current (T j=150 C) VDS=28V, VGS=0V - - 25 uA Gate-Source Leakage VGS=±20V - - ±100 nA ID=30A - 16 26 nC BVDSS Drain-Source Breakdown Voltage ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance o IDSS Drain-Source Leakage Current (T j=25 C) o IGSS 2 VGS=0V, ID=250uA 2 Max. Units Qg Total Gate Charge Qgs Gate-Source Charge VDS=25V - 6 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 9.5 - nC VDS=15V - 9 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=30A - 74 - ns td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 22.5 - ns tf Fall Time RD=0.5Ω - 7.7 - ns Ciss Input Capacitance VGS=0V - 1520 2430 pF Coss Output Capacitance VDS=25V - 320 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 230 - pF Rg Gate Resistance f=1.0MHz - 1.8 2.7 Ω Min. Typ. IS=30A, VGS=0V - - 1.2 V IS=20A, VGS=0V, - 27 - ns dI/dt=100A/µs - 20 - nC Min. Typ. - - 113 mJ - 15 - A Source-Drain Diode Symbol Parameter Test Conditions 2 VSD Forward On Voltage 2 trr Reverse Recovery Time Qrr Reverse Recovery Charge Max. Units Drain-Source Avalanche Ratings Symbol Parameter Test Conditions 3 EAS Drain-Source Avalanche Energy IAS Drain-Source Avalanche Current ID=15A, VDD=35V, L=1mH Max. Units Notes: 1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%. 3.Single Pulse Test. 2/4 AP4420GH/J 120 120 10V 7.0 V o T C =25 C 100 ID , Drain Current (A) 100 ID , Drain Current (A) 10V 7 .0V T C =150 o C 80 5.0V 60 4.5 V 40 80 5.0V 4.5 V 60 40 V G =4.0V V G = 4.0 V 20 20 0 0 0.0 2.0 4.0 6.0 8.0 0.0 V DS , Drain-to-Source Voltage (V) 4.0 6.0 8.0 10.0 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 2.0 80 I D =30A V G =10V I D =15A T C =25 o C 1.6 Normalized RDS(ON) 60 RDS(ON) (mΩ) 2.0 40 1.2 0.8 20 0.4 0 2 4 6 8 25 10 50 75 100 125 150 T j , Junction Temperature ( o C) V GS , Gate-to-Source Voltage (V) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 50.0 30 25 T j =150 o C T j =25 o C 40.0 RDS(ON) (mΩ) IS(A) 20 15 30.0 V GS =4.5V 20.0 10 V GS =10V 10.0 5 0 0.0 0 0.4 0.8 1.2 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.6 0 10 20 30 40 I D , Drain Current (A) Fig 6. On-Resistance vs. Drain Current 3/4 AP4420GH/J f=1.0MHz 10000 I D =30A 12 C iss V DS =15V V DS =20V V DS =25V 1000 C (pF) VGS , Gate to Source Voltage (V) 16 8 C oss C rss 100 4 10 0 0 5 10 15 20 25 1 30 5 9 13 17 21 25 29 V DS ,Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 1000 Normalized Thermal Response (Rthjc) Duty factor = 0.5 100 ID (A) 100us 10 1ms 10ms 100ms DC o T C =25 C Single Pulse 1 0 0.2 0.1 0.1 0.05 PDM t 0.02 T 0.01 Duty Factor = t/T Peak Tj = PDM x Rthjc + T C Single Pulse 0.01 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 t , Pulse Width (s) V DS ,Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 120 V DS =5V VG ID , Drain Current (A) 100 QG 80 T j =25 o C T j =150 o C 4.5V QGS 60 QGD 40 20 Charge Q 0 0 2 4 6 8 V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 4/4