Luguang GBPC3504 Silicon bridge rectifier Datasheet

GBPC3500-GBPC3510
Silicon Bridge Rectifiers
PRV : 50 - 1000 Volts
Io : 35 Amperes
BR-35
0.728(18.50)
0.688(17.40)
Features
—
—
—
—
—
—
0.570(14.50)
0.530(13.40)
High current capability
High surge current capability
High reliability
Low reverse current
Low forward voltage drop
Pb / RoHS Free
—
0.197(5.00)
0.193(4.90)
0.658(16.70)
0.618(15.70)
0.028(0.71)
0.024(0.61)
Mechanical Data
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—
—
—
—
0.685(16.70) 1.130(28.70)
0.618(15.70) 1 120(28 40)
0.252(6.40)
0.248(6.30)
φ 0.094(2.40)
0.087(2.20)
1.141 (29.0)
1.063 (27.0)
0.325 (8.25)
0.309 (7.85)
Case : Metal Case
Epoxy : UL94V-O rate flame retardant
Terminals : plated .25" (6.35 mm). Faston
Polarity : Polarity symbols marked on case
Mounting position : Bolt down on heat-sink with
silicone thermal compound between bridge
and mounting surface for maximum heat
transfer efficiency.
Weight : 15.6 grams
Dimensions in inches and ( millimeters )
Maximum Ratings and Electrical Characteristics
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL
GBPC
3500
GBPC
3501
GBPC
3502
GBPC
3504
GBPC
3506
GBPC
3508
GBPC
3510
UNIT
Maximum Recurrent Peak Reverse Voltage
VRRM
50
100
200
400
600
800
1000
V
Maximum RMS Voltage
VRMS
35
70
140
280
420
560
700
V
Maximum DC Blocking Voltage
VDC
50
100
200
400
600
800
1000
V
Maximum Average Forward Current Tc = 55°C
IF(AV)
35
A
IFSM
400
A
Current Squared Time at t < 8.3 ms.
I2 t
660
A2S
Maximum Forward Voltage per Diode at IF = 17.5 A
VF
1.1
V
IR
10
μA
IR(H)
200
μA
Typical Thermal Resistance (Note 1)
RθJC
1.5
°C/W
Typical Thermal Resistance at Junction to Ambient
RθJA
10
°C
TJ
- 40 to + 150
°C
TSTG
- 40 to + 150
°C
RATING
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Maximum DC Reverse Current
Ta = 25 °C
at Rated DC Blocking Voltage
Ta = 100 °C
Operating Junction Temperature Range
Storage Temperature Range
Note : (1) Thermal Resistance from junction to case with units mounted on a 7.5" x 3.5" x 4.6" (19cm.x 9cm.x 11.8cm.) Al.-Finned Plate
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GBPC3500-GBPC3510
Silicon Bridge Rectifiers
RATING AND CHARACTERISTIC CURVES ( KBPC3500 - KBPC3510 )
FIG.2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
42
600
35
500
PEAK FORWARD SURGE
CURRENT, AMPERES
AVERAGE FORWARD OUTPUT
CURRENT, AMPERES
FIG.1 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
28
21
14
HEAT-SINK MOUNTING, Tc
7.5" x 3.5" x 4.6" THK.
(19cm x 9cm x 11.8cm)
Al.-Finned plate
7
8.3 ms SINGLE HALF SINE WAVE
JEDEC METHOD
TJ = 50 °C
400
300
200
100
0
0
0
25
50
75
100
125
150
1
175
CASE TEMPERATURE, ( °C)
6
10
20
40
60 100
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
PER DIODE
PER DIODE
10
REVERSE CURRENT, MICROAMPERES
100
FORWARD CURRENT, AMPERES
4
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
10
Pulse Width = 300 μs
1 % Duty Cycle
1.0
TJ = 25 °C
0.1
0.01
0.4
2
0.6
0.8
1.0
1.2
1.4
1.6
TJ = 100 °C
1.0
TJ = 25 °C
0.1
0.01
0
20
40
60
80
100
PERCENT OF RATED
REVERSE VOLTAGE, (%)
1.8
FORWARD VOLTAGE, VOLTS
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120
mail:[email protected]
140
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