isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BD375/377/379 DESCRIPTION ·DC Current Gain: hFE= 20(Min)@ IC= 1A ·Complement to Type BD376/378/380 APPLICATIONS ·Designed for medium power linear and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO PARAMETER Collector-Base Voltage Collector-Emitter Voltage VALUE BD375 50 BD377 75 BD379 100 BD375 45 BD377 60 BD379 80 UNIT V V Emitter-Base Voltage 5 V IC Collector Current-Continuous 2 A ICM Collector Current-Peak 3 A IB Base Current-Continuous 1 A PC Collector Power Dissipation @ TC=25℃ 25 W TJ Junction Temperature 150 ℃ -55~150 ℃ B Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BD375/377/379 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BD375 VCEO(SUS) VCBO Collector-Emitter Sustaining Voltage Collector-Base Voltage BD377 MIN MAX UNIT 45 IC= 100mA ; IB= 0 80 BD375 50 IC= 0.1mA ; IE= 0 BD379 V 60 BD379 BD377 TYP. V 75 100 VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.1A 1.0 V VBE(on) Base-Emitter On Voltage IC= 1A; VCE= 2V 1.5 V BD375 VCB= 45V; IE= 0 2 BD377 VCB= 60V; IE= 0 2 BD379 VCB= 80V; IE= 0 2 0.1 ICBO Collector Cutoff Current B IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 0.15A ; VCE= 2V 40 hFE-2 DC Current Gain IC= 1A; VCE= 2V 20 μA mA 375 Switching Times ton Turn-On Time toff Turn-Off Time IC= 0.5A; IB1= -IB2= 50mA; VCC= 30V hFE-1 Classifications 6 10 16 25 40-100 63-160 100-250 150-375 isc Website：www.iscsemi.cn 2 0.05 μs 0.5 μs