BWS-93-120-TS5! 93mil 120V Trench Schottky Wafer DIM DESCRIPTION UM MIL Ax Die Size 2,362 93 Ay Die Size 2,362 93 Bx Metal Pad 2,158 85 By Metal Pad 2,158 85 T/min Thickness/min 228 9 T/max Thickness/max 280 11 Top Metal AlSiCu 40KA Backside Metal TiNiAg 25KA Wafer Size 6” Scribe Line 80 Gross Die 3 2818 Electrical Characteristics SYMBOL DESCRIPTION SPEC UNIT VRRM DC Blocking Voltage IFAV Average Forward current VB MIN Minimum Breakdown Voltage at 1.0mA, 25°C 125 Voltage IFSM Nonrepetitive Peak Surge Current-half sine-wave 60hz 215 Amp TJ Operation Junction Temperature -55 to +150 °C TSTG Storage Temperature -55 to +150 °C 120 Voltage 5 Amp Parameters Rating SYMBOL DESCRIPTION TYPICAL SPEC UNIT VF1 Maximum Instantaneous Forward voltage at 3A, 25°C 0.48 0.53 V VF2 Maximum Instantaneous Forward voltage at 5A, 25°C 0.54 0.58 V VF1H Maximum Instantaneous Forward voltage at 3A, 125°C VF2H Maximum Instantaneous Forward voltage at 5A, 125°C 0.49 0.53 V IR1 Maximum Instantaneous Reverse current at VR=120V, 25°C 22 100 uA IR1H Maximum Instantaneous Reverse current at VR=120V, 125°C 20 50 mA V NOTE 1 Specification is applied to die only. Actual performance may degrade when assembled. BW does not guarantee device performance after assembly. 2 Suggest to storage in Nitrogen cabinet, 45-60% RH, 22-26 °C for 6 months. 3 Data sheet information is subjected to change without notice. 4 Suggest Soldering profile (Pb92.5%,5%Sn,Ag2.5%): Soldering peak Temp. 320~350 °C 3~5min. version-A/ 2013 BWS-93-100-TS5! 93mil 100V Trench Schottky Wafer DIM DESCRIPTION UM MIL Ax Die Size 2,362 93 Ay Die Size 2,362 93 Bx Metal Pad 2,158 85 By Metal Pad 2,158 85 T/min Thickness/min 228 9 T/max Thickness/max 280 11 Top Metal AlSiCu 40KA Backside Metal TiNiAg 25KA Wafer Size 6” Scribe Line 80 Gross Die 3 2818 Electrical Characteristics SYMBOL DESCRIPTION SPEC UNIT VRRM DC Blocking Voltage IFAV Average Forward current VB MIN Minimum Breakdown Voltage at 1.0mA, 25°C 105 Voltage IFSM Nonrepetitive Peak Surge Current-half sine-wave 60hz 215 Amp TJ Operation Junction Temperature -55 to +150 °C TSTG Storage Temperature -55 to +150 °C 100 Voltage 5 Amp Parameters Rating SYMBOL DESCRIPTION TYPICAL SPEC UNIT VF1 Maximum Instantaneous Forward voltage at 3A, 25°C 0.46 0.50 V VF2 Maximum Instantaneous Forward voltage at 5A, 25°C 0.52 0.56 V VF1H Maximum Instantaneous Forward voltage at 3A, 125°C VF2H Maximum Instantaneous Forward voltage at 5A, 125°C 0.46 0.52 V IR1 Maximum Instantaneous Reverse current at VR=120V, 25°C 15 100 uA IR1H Maximum Instantaneous Reverse current at VR=120V, 125°C 14 50 mA V NOTE 1 Specification is applied to die only. Actual performance may degrade when assembled. BW does not guarantee device performance after assembly. 2 Suggest to storage in Nitrogen cabinet, 45-60% RH, 22-26 °C for 6 months. 3 Data sheet information is subjected to change without notice. 4 Suggest Soldering profile (Pb92.5%,5%Sn,Ag2.5%): Soldering peak Temp. 320~350 °C 3~5min. version-A/ 2013 BWS-80-120-TS5! 80mil 120V Trench Schottky Wafer DIM DESCRIPTION UM MIL Ax Die Size 2,032 80 Ay Die Size 2,032 80 Bx Metal Pad 1,828 72 By Metal Pad 1,828 72 T/min Thickness/min 228 9 T/max Thickness/max 280 11 Top Metal AlSiCu 40KA Backside Metal TiNiAg 25KA Wafer Size 6” Scribe Line 80 Gross Die 3 3799 Electrical Characteristics SYMBOL DESCRIPTION SPEC UNIT VRRM DC Blocking Voltage IFAV Average Forward current VB MIN Minimum Breakdown Voltage at 1.0mA, 25°C 125 Voltage IFSM Nonrepetitive Peak Surge Current-half sine-wave 60hz 160 Amp TJ Operation Junction Temperature -55 to +150 °C TSTG Storage Temperature -55 to +150 °C 120 Voltage 5 Amp Parameters Rating SYMBOL DESCRIPTION TYPICAL SPEC UNIT VF1 Maximum Instantaneous Forward voltage at 3A, 25°C 0.51 0.55 V VF2 Maximum Instantaneous Forward voltage at 5A, 25°C 0.60 0.64 V VF1H Maximum Instantaneous Forward voltage at 3A, 125°C VF2H Maximum Instantaneous Forward voltage at 5A, 125°C 0.52 0.58 V IR1 Maximum Instantaneous Reverse current at VR=120V, 25°C 18 100 uA IR1H Maximum Instantaneous Reverse current at VR=120V, 125°C 18 50 mA V NOTE 1 Specification is applied to die only. Actual performance may degrade when assembled. BW does not guarantee device performance after assembly. 2 Suggest to storage in Nitrogen cabinet, 45-60% RH, 22-26 °C for 6 months. 3 Data sheet information is subjected to change without notice. 4 Suggest Soldering profile (Pb92.5%,5%Sn,Ag2.5%): Soldering peak Temp. 320~350 °C 3~5min. version-A/ 2013 BWS-80-100-TS5! 80mil 100V Trench Schottky Wafer DIM DESCRIPTION UM MIL Ax Die Size 2,032 80 Ay Die Size 2,032 80 Bx Metal Pad 1,828 72 By Metal Pad 1,828 72 T/min Thickness/min 228 9 T/max Thickness/max 280 11 Top Metal AlSiCu 40KA Backside Metal TiNiAg 25KA Wafer Size 6” Scribe Line 80 Gross Die 3 3799 Electrical Characteristics SYMBOL DESCRIPTION SPEC UNIT VRRM DC Blocking Voltage IFAV Average Forward current VB MIN Minimum Breakdown Voltage at 1.0mA, 25°C 105 Voltage IFSM Nonrepetitive Peak Surge Current-half sine-wave 60hz 160 Amp TJ Operation Junction Temperature -55 to +150 °C TSTG Storage Temperature -55 to +150 °C 100 Voltage 5 Amp Parameters Rating SYMBOL DESCRIPTION TYPICAL SPEC UNIT VF1 Maximum Instantaneous Forward voltage at 3A, 25°C 0.49 0.52 V VF2 Maximum Instantaneous Forward voltage at 5A, 25°C 0.54 0.58 V VF1H Maximum Instantaneous Forward voltage at 3A, 125°C VF2H Maximum Instantaneous Forward voltage at 5A, 125°C 0.50 0.54 V IR1 Maximum Instantaneous Reverse current at VR=120V, 25°C 15 100 uA IR1H Maximum Instantaneous Reverse current at VR=120V, 125°C 10 50 mA V NOTE 1 Specification is applied to die only. Actual performance may degrade when assembled. BW does not guarantee device performance after assembly. 2 Suggest to storage in Nitrogen cabinet, 45-60% RH, 22-26 °C for 6 months. 3 Data sheet information is subjected to change without notice. 4 Suggest Soldering profile (Pb92.5%,5%Sn,Ag2.5%): Soldering peak Temp. 320~350 °C 3~5min. version-A/ 2013 BWS-80-80-TS5! 80mil 80V Trench Schottky Wafer DIM DESCRIPTION UM MIL Ax Die Size 2,032 80 Ay Die Size 2,032 80 Bx Metal Pad 1,828 72 By Metal Pad 1,828 72 T/min Thickness/min 228 9 T/max Thickness/max 280 11 Top Metal AlSiCu 40KA Backside Metal TiNiAg 25KA Wafer Size 6” Scribe Line 80 Gross Die 3 3799 Electrical Characteristics SYMBOL DESCRIPTION SPEC UNIT VRRM DC Blocking Voltage 80 Voltage IFAV Average Forward current 5 Amp VB MIN Minimum Breakdown Voltage at 1.0mA, 25°C 85 Voltage IFSM Nonrepetitive Peak Surge Current-half sine-wave 60hz 160 Amp TJ Operation Junction Temperature -55 to +150 °C TSTG Storage Temperature -55 to +150 °C Parameters Rating SYMBOL DESCRIPTION TYPICAL SPEC UNIT VF1 Maximum Instantaneous Forward voltage at 3A, 25°C 0.46 0.49 V VF2 Maximum Instantaneous Forward voltage at 5A, 25°C 0.51 0.55 V VF1H Maximum Instantaneous Forward voltage at 3A, 125°C VF2H Maximum Instantaneous Forward voltage at 5A, 125°C 0.44 0.48 V IR1 Maximum Instantaneous Reverse current at VR=120V, 25°C 15 100 uA IR1H Maximum Instantaneous Reverse current at VR=120V, 125°C 10 50 mA V NOTE 1 Specification is applied to die only. Actual performance may degrade when assembled. BW does not guarantee device performance after assembly. 2 Suggest to storage in Nitrogen cabinet, 45-60% RH, 22-26 °C for 6 months. 3 Data sheet information is subjected to change without notice. 4 Suggest Soldering profile (Pb92.5%,5%Sn,Ag2.5%): Soldering peak Temp. 320~350 °C 3~5min. version-A/ 2013 BWS-B9-80-TS5! 119mil 80V Trench Schottky Wafer DIM DESCRIPTION UM MIL Ax Die Size 3,023 119 Ay Die Size 3,023 119 Bx Metal Pad 2,819 111 By Metal Pad 2,819 111 T/min Thickness/min 279 11 T/max Thickness/max 279 11 Top Metal AlSiCu 40KA Backside Metal TiNiAg 25KA Wafer Size 6” Scribe Line Gross Die 80 3 2818 Electrical Characteristics SYMBOL DESCRIPTION SPEC UNIT VRRM DC Blocking Voltage 80 Voltage IFAV Average Forward current 20 Amp VB MIN Minimum Breakdown Voltage at 1.0mA, 25°C 85 Voltage IFSM Nonrepetitive Peak Surge Current-half sine-wave 60hz 320 Amp TJ Operation Junction Temperature -55 to +150 °C TSTG Storage Temperature -55 to +150 °C Parameters Rating SYMBOL DESCRIPTION TYPICAL SPEC UNIT VF1 Maximum Instantaneous Forward voltage at 5A, 25°C 0.43 0.47 V VF2 Maximum Instantaneous Forward voltage at 20A, 25°C 0.58 0.63 V VF1H Maximum Instantaneous Forward voltage at 5A, 125°C VF2H Maximum Instantaneous Forward voltage at 20A, 125°C IR1 IR1H V 0.49 0.53 V Maximum Instantaneous Reverse current at VR=120V, 25°C 22 100 uA Maximum Instantaneous Reverse current at VR=120V, 125°C 20 50 mA NOTE 1 Specification is applied to die only. Actual performance may degrade when assembled. BW does not guarantee device performance after assembly. 2 Suggest to storage in Nitrogen cabinet, 45-60% RH, 22-26 °C for 6 months. 3 Data sheet information is subjected to change without notice. 4 Suggest Soldering profile (Pb92.5%,5%Sn,Ag2.5%): Soldering peak Temp. 320~350 °C 3~5min. version-A/ 2014 BWS-67-100-TS5! 67mil 100V Trench Schottky Wafer DIM DESCRIPTION UM MIL Ax Die Size 1,702 67 Ay Die Size 1,702 67 Bx Metal Pad 1,473 58 By Metal Pad 1,473 58 T/min Thickness/min 228 9 T/max Thickness/max 280 11 Top Metal AlSiCu 40KA Backside Metal TiNiAg 25KA Wafer Size 6” Scribe Line 80 Gross Die 3 5379 Electrical Characteristics SYMBOL DESCRIPTION SPEC UNIT VRRM DC Blocking Voltage IFAV Average Forward current VB MIN Minimum Breakdown Voltage at 1.0mA, 25°C 105 Voltage IFSM Nonrepetitive Peak Surge Current-half sine-wave 60hz 120 Amp TJ Operation Junction Temperature -55 to +150 °C TSTG Storage Temperature -55 to +150 °C 100 Voltage 5 Amp Parameters Rating SYMBOL DESCRIPTION TYPICAL SPEC UNIT VF1 Maximum Instantaneous Forward voltage at 3A, 25°C 0.53 0.56 V VF2 Maximum Instantaneous Forward voltage at 5A, 25°C 0.61 0.65 V VF1H Maximum Instantaneous Forward voltage at 3A, 125°C VF2H Maximum Instantaneous Forward voltage at 5A, 125°C 0.56 0.60 V IR1 Maximum Instantaneous Reverse current at VR=120V, 25°C 9 100 uA IR1H Maximum Instantaneous Reverse current at VR=120V, 125°C 5 50 mA V NOTE 1 Specification is applied to die only. Actual performance may degrade when assembled. BW does not guarantee device performance after assembly. 2 Suggest to storage in Nitrogen cabinet, 45-60% RH, 22-26 °C for 6 months. 3 Data sheet information is subjected to change without notice. 4 Suggest Soldering profile (Pb92.5%,5%Sn,Ag2.5%): Soldering peak Temp. 320~350 °C 3~5min. version-A/ 2013 BWS-67-80-TS5! 67mil 80V Trench Schottky Wafer DIM DESCRIPTION UM MIL Ax Die Size 1,702 67 Ay Die Size 1,702 67 Bx Metal Pad 1,473 58 By Metal Pad 1,473 58 T/min Thickness/min 228 9 T/max Thickness/max 280 11 Top Metal AlSiCu 40KA Backside Metal TiNiAg 25KA Wafer Size 6” Scribe Line 80 Gross Die 3 5379 Electrical Characteristics SYMBOL DESCRIPTION SPEC UNIT VRRM DC Blocking Voltage 80 Voltage IFAV Average Forward current 5 Amp VB MIN Minimum Breakdown Voltage at 1.0mA, 25°C 85 Voltage IFSM Nonrepetitive Peak Surge Current-half sine-wave 60hz 120 Amp TJ Operation Junction Temperature -55 to +150 °C TSTG Storage Temperature -55 to +150 °C Parameters Rating SYMBOL DESCRIPTION TYPICAL SPEC UNIT VF1 Maximum Instantaneous Forward voltage at 3A, 25°C 0.48 0.53 V VF2 Maximum Instantaneous Forward voltage at 5A, 25°C 0.53 0.56 V VF1H Maximum Instantaneous Forward voltage at 3A, 125°C VF2H Maximum Instantaneous Forward voltage at 5A, 125°C 0.49 0.53 V IR1 Maximum Instantaneous Reverse current at VR=800V, 25°C 6 100 uA IR1H Maximum Instantaneous Reverse current at VR=80V, 125°C 5 50 mA V NOTE 1 Specification is applied to die only. Actual performance may degrade when assembled. BW does not guarantee device performance after assembly. 2 Suggest to storage in Nitrogen cabinet, 45-60% RH, 22-26 °C for 6 months. 3 Data sheet information is subjected to change without notice. 4 Suggest Soldering profile (Pb92.5%,5%Sn,Ag2.5%): Soldering peak Temp. 320~350 °C 3~5min. version-A/ 2014