AP9487GM-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
D
▼ Lower Gate Charge
D
D
▼ Fast Switching Characteristic
G
BVDSS
80V
RDS(ON)
85mΩ
ID
4A
S
▼ RoHS Compliant & Halogen-Free
SO-8
S
S
Description
AP9487 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
D
G
S
The SO-8 package is widely preferred for all commercial-industrial
surface mount applications using infrared reflow technique and
suited for voltage conversion or switch applications.
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Drain Current, VGS @ 10V
3
Drain Current, VGS @ 10V
3
1
Rating
Units
80
V
+25
V
4
A
3.2
A
30
A
IDM
Pulsed Drain Current
PD@TA=25℃
Total Power Dissipation
2.5
W
Linear Derating Factor
0.02
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
3
Value
Unit
50
℃/W
1
201501123
AP9487GM-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
80
-
-
V
-
0.09
-
V/℃
VGS=10V, ID=4A
-
-
85
mΩ
VGS=4.5V, ID=2A
-
-
100
mΩ
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
Static Drain-Source On-Resistance
2
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=4A
-
7
-
S
IDSS
Drain-Source Leakage Current
VDS=80V, VGS=0V
-
-
1
uA
o
Drain-Source Leakage Current (Tj=70 C) VDS=64V, VGS=0V
-
-
25
uA
IGSS
Gate-Source Leakage
VGS=+25V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=4A
-
11
18
nC
Qgs
Gate-Source Charge
VDS=64V
-
3
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
5.5
-
nC
td(on)
Turn-on Delay Time
VDS=40V
-
8
-
ns
tr
Rise Time
ID=1A
-
4
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
23
-
ns
tf
Fall Time
VGS=10V
-
5
-
ns
Ciss
Input Capacitance
VGS=0V
-
Coss
Output Capacitance
VDS=25V
-
80
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
50
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.5
2.3
Ω
Min.
Typ.
IS=2A, VGS=0V
-
-
1.2
V
1010 1620
pF
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=4A, VGS=0V,
-
30
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
43
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
2
3.Surface mounted on 1 in copper pad of FR4 board, t <10sec ; 125 ℃/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9487GM-HF
30
30
10V
7.0 V
5.0V
4.5V
20
V G =3.0V
10
0
20
10
V G =3.0V
0
0
2
4
6
8
10
0
V DS , Drain-to-Source Voltage (V)
2
4
6
8
10
12
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
180
ID=2A
T A =25 ℃
ID=4A
V G =10V
1.7
Normalized RDS(ON)
150
RDS(ON) (mΩ )
10V
7.0V
5.0V
4.5V
T A = 150 o C
ID , Drain Current (A)
ID , Drain Current (A)
T A = 25 o C
120
1.4
1.1
90
0.8
0.5
60
2
4
6
8
-50
10
V GS , Gate-to-Source Voltage (V)
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
4
1.6
Normalized VGS(th)
IS(A)
3
2
T j =150 o C
T j =25 o C
1.2
0.8
1
0
0.4
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9487GM-HF
f=1.0MHz
12
10000
ID=4A
V DS = 40 V
V DS = 50 V
V DS = 64 V
8
C (pF)
VGS , Gate to Source Voltage (V)
10
C iss
1000
6
4
100
C oss
C rss
2
10
0
0
5
10
15
20
1
25
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
Normalized Thermal Response (R thja)
Duty factor=0.5
Operation in this
area limited by
RDS(ON)
10
ID (A)
100us
1ms
1
10ms
100ms
0.1
T A =25 o C
Single Pulse
1s
DC
0.01
0.1
1
10
100
0.2
0.1
0.1
0.05
0.02
0.01
PDM
t
0.01
Single Pulse
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja = 125℃
℃ /W
0.001
1000
0.0001
0.001
0.01
V DS , Drain-to-Source Voltage (V)
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
30
VG
ID , Drain Current (A)
V DS =5V
o
T j =25 C
QG
T j =150 o C
4.5V
20
QGS
QGD
10
Charge
Q
0
0
2
4
6
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4
AP9487GM-HF
MARKING INFORMATION
Part Number
9487GM
YWWSSS
meet Rohs requirement
for low voltage MOSFET only
Package Code
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
5