AP10TN040H
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Rg & UIS Test
D
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
G
▼ RoHS Compliant & Halogen-Free
BVDSS
100V
RDS(ON)
40mΩ
ID
31.5A
S
Description
AP10TN040 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications using infrared reflow technique and
suited for high current application due to the low connection
resistance.
G
D
S
TO-252(H)
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
.
Rating
Units
VDS
Drain-Source Voltage
100
V
VGS
Gate-Source Voltage
+20
V
ID@TC=25℃
Drain Current, VGS @ 10V
31.5
A
ID@TC=100℃
Drain Current, VGS @ 10V
20
A
100
A
89.2
W
2
W
72
mJ
Parameter
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
PD@TA=25℃
Total Power Dissipation
4
EAS
Single Pulse Avalanche Energy
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Data and specifications subject to change without notice
3
Value
Units
1.4
℃/W
62.5
℃/W
1
201504211
AP10TN040H
o
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
BVDSS
Parameter
Test Conditions
Drain-Source Breakdown Voltage
2
Min.
Typ.
Max. Units
VGS=0V, ID=250uA
100
-
-
V
VGS=10V, ID=16A
-
-
40
mΩ
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
5
V
gfs
Forward Transconductance
VDS=10V, ID=16A
-
20
-
S
IDSS
Drain-Source Leakage Current
VDS=80V, VGS=0V
-
-
25
uA
IGSS
Gate-Source Leakage
VGS= +20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=16A
-
38
61
nC
Qgs
Gate-Source Charge
VDS=80V
-
14
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
15
-
nC
td(on)
Turn-on Delay Time
VDS=50V
-
15
-
ns
tr
Rise Time
ID=16A
-
45
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
19
-
ns
tf
Fall Time
VGS=10V
-
8
-
ns
Ciss
Input Capacitance
VGS=0V
-
2030 3250
pF
Coss
Output Capacitance
VDS=25V
-
230
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
115
-
pF
Rg
Gate Resistance
-
1.1
2.2
Ω
Min.
Typ.
IS=16A, VGS=0V
-
-
1.2
V
.
f=1.0MHz
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=16A, VGS=0V,
-
80
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
250
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
2
3.Surface mounted on 1 in copper pad of FR4 board
4.Starting Tj=25oC , VDD=50V , L=1mH , RG=25Ω
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP10TN040H
100
80
o
T C = 150 C
ID , Drain Current (A)
9.0V
80
ID , Drain Current (A)
10V
9.0V
o
10V
T C = 25 C
60
8.0V
40
40
7.0V
20
7.0V
20
8.0V
60
V G = 6.0V
V G = 6.0V
0
0
0
4
8
12
16
20
0
4
V DS , Drain-to-Source Voltage (V)
8
12
16
20
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
80
2.8
I D =16A
V GS =10V
I D =10A
o
T C =25 C
2.4
60
.
50
Normalized RDS(ON)
RDS(ON) (mΩ)
70
2.0
1.6
1.2
40
0.8
0.4
30
6
7
8
9
-100
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
V GS Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
16
1.6
I D =250uA
IS(A)
Normalized VGS(th)
12
8
T j =150 o C
T j =25 o C
1.2
0.8
0.4
4
0
0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-100
-50
0
50
100
150
T j ,Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP10TN040H
f=1.0MHz
12
4000
I D = 16A
V DS =80V
3000
8
C (pF)
VGS , Gate to Source Voltage (V)
10
6
2000
C iss
4
1000
2
0
0
0
10
20
30
40
50
0
20
Q G , Total Gate Charge (nC)
40
60
80
100
C oss
C rss
120
V DS ,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
ID (A)
Operation in this
area limited by
RDS(ON)
100us
.
10
1ms
10ms
100ms
DC
1
o
T C =25 C
Single Pulse
Normalized Thermal Response (Rthjc)
1000
Duty factor=0.5
0.2
0.1
0.05
0.1
0.02
0.01
PDM
Single Pulse
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
0.01
0.1
0.1
1
10
100
1000
0.00001
0.0001
0.001
V DS , Drain-to-Source Voltage (V)
0.01
0.1
1
10
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
50
VG
ID , Drain Current (A)
40
QG
10V
30
QGS
QGD
20
10
Charge
Q
0
25
50
75
100
T C , Case Temperature (
125
o
150
C)
Fig 11. Drain Current v.s. Case
Temperature
Fig 12. Gate Charge Waveform
4
AP10TN040H
80
120
T j =25 o C
100
PD, Power Dissipation(W)
RDS(ON) (mΩ)
70
60
V GS =7.0V
V GS =8.0V
50
80
60
40
40
20
V GS =9.0V
V GS =10V
0
30
0
10
20
30
0
40
50
100
150
T C , Case Temperature( o C)
I D , Drain Current (A)
Fig 13. Typ. Drain-Source on State
Resistance
Fig 14. Total Power Dissipation
2
I D =1mA
Normalized BVDSS
1.6
1.2
.
0.8
0.4
0
-100
-50
T
0
j
50
100
150
, Junction Temperature ( o C)
Fig 15. Normalized BVDSS v.s. Junction
5
AP10TN040H
MARKING INFORMATION
Part Number
10TN040
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
.
6