BF1207 Dual N-channel dual gate MOSFET Rev. 01 — 28 July 2005 Product data sheet 1. Product profile 1.1 General description The BF1207 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads and an integrated switch. The source and substrate are interconnected. Internal bias circuits enable Direct Current (DC) stabilization and a very good cross-modulation performance during Automatic Gain Control (AGC). Integrated diodes between the gates and source protect against excessive input voltage surges. The BF1207 has a SOT363 micro-miniature plastic package. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. MSC895 1.2 Features ■ Two low noise gain controlled amplifiers in a single package. One with a fully integrated bias and one with partly integrated bias ■ Internal switch to save external components ■ Superior cross-modulation performance during AGC ■ High forward transfer admittance ■ High forward transfer admittance to input capacitance ratio 1.3 Applications ■ Gain controlled low noise amplifiers for Very High Frequency (VHF) and Ultra High Frequency (UHF) applications with 5 V supply voltage, such as digital and analog television tuners and professional communication equipment BF1207 Philips Semiconductors Dual N-channel dual gate MOSFET 1.4 Quick reference data Table 1: Quick reference data Per MOSFET unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit - - 6 VDS drain-source voltage DC ID drain current DC Ptot total power dissipation Tsp ≤ 107 °C yfs forward transfer admittance f = 1 MHz Ciss(G1) input capacitance at gate1 V - - 30 mA - - 180 mW amplifier A; ID = 18 mA 25 30 40 mS amplifier B; ID = 14 mA 26 31 41 mS amplifier A - 2.2 2.7 pF amplifier B - 1.9 2.4 pF [1] f = 100 MHz Crss reverse transfer capacitance f = 100 MHz - 20 - fF NF noise figure amplifier A; f = 400 MHz - 1.3 - dB amplifier B; f = 800 MHz - 1.4 - dB amplifier A 100 105 - dBµV amplifier B 100 103 - dBµV - - 150 °C Xmod input level for k = 1 % at 40 dB AGC junction temperature Tj [1] cross-modulation Tsp is the temperature at the soldering point of the source lead. 2. Pinning information Table 2: Discrete pinning Pin Description 1 drain (AMP A) 2 source 3 drain (AMP B) 4 gate1 (AMP B) 5 gate2 6 gate1 (AMP A) Simplified outline 6 5 Symbol AMP B 4 G1B 1 2 3 DB G2 S DA G1A AMP A sym108 9397 750 14955 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 28 July 2005 2 of 22 BF1207 Philips Semiconductors Dual N-channel dual gate MOSFET 3. Ordering information Table 3: Ordering information Type number BF1207 Package Name Description Version - plastic surface mounted package; 6 leads SOT363 4. Marking Table 4: Marking Type number Marking code [1] BF1207 M2* [1] * = p: Made in Hong Kong. * = t: Made in Malaysia. * = W: Made in China. 5. Limiting values Table 5: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per MOSFET VDS drain-source voltage DC - 6 V ID drain current DC - 30 mA IG1 gate1 current - ±10 mA IG2 gate2 current - ±10 mA - 180 mW Tsp ≤ 107 °C Ptot total power dissipation Tstg storage temperature −65 +150 °C Tj junction temperature - 150 °C [1] Tsp is the temperature at the soldering point of the source lead. 9397 750 14955 Product data sheet [1] © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 28 July 2005 3 of 22 BF1207 Philips Semiconductors Dual N-channel dual gate MOSFET 001aac741 250 Ptot (mW) 200 150 100 50 0 0 50 100 150 200 Tsp (°C) Fig 1. Power derating curve 6. Thermal characteristics Table 6: Thermal characteristics Symbol Parameter Conditions Rth(j-sp) thermal resistance from junction to soldering point Typ Unit 240 K/W 7. Static characteristics Table 7: Static characteristics Tj = 25 °C. Symbol Parameter Conditions Min Typ Max Unit amplifier A 6 - - V amplifier B 6 - - V Per MOSFET; unless otherwise specified V(BR)DSS drain-source breakdown voltage VG1-S = VG2-S = 0 V; ID = 10 µA V(BR)G1-SS gate1-source breakdown voltage VGS = VDS = 0 V; IG1-S = 10 mA 6 - 10 V V(BR)G2-SS gate2-source breakdown voltage VGS = VDS = 0 V; IG2-S = 10 mA 6 - 10 V VF(S-G1) forward source-gate1 voltage VG2-S = VDS = 0 V; IS-G1 = 10 mA 0.5 - 1.5 V VF(S-G2) forward source-gate2 voltage VG1-S = VDS = 0 V; IS-G2 = 10 mA 0.5 - 1.5 V VG1-S(th) gate1-source threshold voltage VDS = 5 V; VG2-S = 4 V; ID = 100 µA 0.3 - 1.0 V VG2-S(th) gate2-source threshold voltage VDS = 5 V; VG1-S = 5 V; ID = 100 µA 0.4 - 1.0 V IDSX drain-source current VG2-S = 4 V; VDS = 5 V; RG1 = 68 kΩ amplifier A [1] 13 - 23 mA amplifier B [2] 9 - 19 mA 9397 750 14955 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 28 July 2005 4 of 22 BF1207 Philips Semiconductors Dual N-channel dual gate MOSFET Table 7: Static characteristics …continued Tj = 25 °C. Symbol Parameter Conditions IG1-S gate1 cut-off current VG2-S = VDS(A) = 0 V amplifier A; VG1-S(A) = 5 V; VDS(B) = 0 V gate2 cut-off current IG2-S Min Typ Max Unit - - 50 nA amplifier B; VG1-S(A) = 0 V; ID(B) = 0 A - - 50 nA VG2-S = 4 V; VG1-S = VDS(A) = VDS(B) = 0 V; - - 20 nA [1] RG1 connects gate1 (A) to VGG = 5 V (see Figure 3). [2] RG1 connects gate1 (B) to VGG = 0 V (see Figure 3). 001aac742 20 ID (mA) 16 (1) G1B DB (2) 12 G2 S (3) G1A 8 DA RG1 (4) VGG 4 (6) 001aac881 (5) 0 0 1 2 3 4 5 VGG (V) (1) ID(A); RG1 = 47 kΩ. VGG = 5 V: amplifier A is on; amplifier B is off. (2) ID(A); RG1 = 68 kΩ. VGG = 0 V: amplifier A is off; amplifier B is on. (3) ID(A); RG1 = 100 kΩ. (4) ID(B); RG1 = 100 kΩ. (5) ID(B); RG1 = 68 kΩ. (6) ID(B); RG1 = 47 kΩ. VDS(A) = VDS(B) = 5 V; VG2-S = 4 V; Tj = 25 °C. Fig 2. Drain currents of MOSFET A and B as function of VGG Fig 3. Functional diagram 9397 750 14955 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 28 July 2005 5 of 22 BF1207 Philips Semiconductors Dual N-channel dual gate MOSFET 8. Dynamic characteristics 8.1 Dynamic characteristics for amplifier A Table 8: Dynamic characteristics for amplifier A Common source; Tamb = 25 °C; VG2-S = 4 V; VDS = 5 V; ID = 18 mA. [1] Symbol Parameter Conditions Min Typ Max Unit yfs forward transfer admittance Tj = 25 °C 25 30 40 mS Ciss(G1) input capacitance at gate1 f = 100 MHz - 2.2 2.7 pF Ciss(G2) input capacitance at gate2 f = 1 MHz - 3.5 - pF Coss output capacitance f = 100 MHz - 0.9 - pF Crss reverse transfer capacitance f = 100 MHz - 20 - fF Gtr power gain BS = BS(opt); BL = BL(opt) f = 200 MHz; GS = 2 mS; GL = 0.5 mS 30 34 38 dB f = 400 MHz; GS = 2 mS; GL = 1 mS 26 30 34 dB f = 800 MHz; GS = 3.3 mS; GL = 1 mS NF noise figure 21 25 29 dB f = 11 MHz; GS = 20 mS; BS = 0 S - 3.0 - dB f = 400 MHz; YS = YS(opt) - 1.3 - dB - 1.4 - dB at 0 dB AGC 90 - - dBµV at 10 dB AGC - 90 - dBµV f = 800 MHz; YS = YS(opt) Xmod cross-modulation input level for k = 1 %; fw = 50 MHz; funw = 60 MHz at 20 dB AGC - 99 - dBµV at 40 dB AGC 100 105 - dBµV [1] For the MOSFET not in use: VG1-S(B) = 0 V; VDS(B) = 0 V. [2] Measured in Figure 29 test circuit. 9397 750 14955 Product data sheet [2] © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 28 July 2005 6 of 22 BF1207 Philips Semiconductors Dual N-channel dual gate MOSFET 8.1.1 Graphs for amplifier A 001aac882 35 ID (mA) 30 001aaa883 32 (1) (1) ID (mA) (2) (2) (3) 24 25 (3) (4) (4) 20 (5) 16 (5) (6) 15 (7) 10 (8) (6) 8 (9) 5 (7) 0 0 0.4 0.8 1.2 1.6 2.0 VG1-S (V) 0 0 4 6 VDS (V) (1) VG2-S = 4 V. (1) VG1-S(A) = 1.9 V. (2) VG2-S = 3.5 V. (2) VG1-S(A) = 1.8 V. (3) VG2-S = 3 V. (3) VG1-S(A) = 1.7 V. (4) VG2-S = 2.5 V. (4) VG1-S(A) = 1.6 V. (5) VG2-S = 2 V. (5) VG1-S(A) = 1.5 V. (6) VG2-S = 1.5 V. (6) VG1-S(A) = 1.4 V. (7) VG2-S = 1 V. (7) VG1-S(A) = 1.3 V. VDS(A) = 5 V; Tj = 25 °C. 2 (8) VG1-S(A) = 1.2 V. (9) VG1-S(A) = 1.1 V. VDS(A) = 5 V; VG2-S = 4 V; Tj = 25 °C. Fig 4. Amplifier A: transfer characteristics; typical values Fig 5. Amplifier A: output characteristics; typical values 9397 750 14955 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 28 July 2005 7 of 22 BF1207 Philips Semiconductors Dual N-channel dual gate MOSFET 001aac884 40 001aac885 (1) 25 ID (mA) yfs (mS) (1) (2) 20 30 (3) (2) (4) 15 (5) 20 (6) (3) (7) 10 10 (4) 5 (5) (7) 0 0 (6) 8 0 16 24 32 0 2 4 ID (mA) (1) VG2-S = 4 V. (1) RG1(A) = 39 kΩ. (2) VG2-S = 3.5 V. (2) RG1(A) = 47 kΩ. (3) VG2-S = 3 V. (3) RG1(A) = 68 kΩ. (4) VG2-S = 2.5 V. (4) RG1(A) = 82 kΩ. (5) VG2-S = 2 V. (5) RG1(A) = 100 kΩ. (6) VG2-S = 1.5 V. (6) RG1(A) = 120 kΩ. (7) VG2-S = 1 V. (7) RG1(A) = 150 kΩ. VDS(A) = 5 V; Tj = 25 °C. VGG = VDS (V) 6 VG2-S = 4 V; Tj = 25 °C. Fig 6. Amplifier A: forward transfer admittance as a function of drain current; typical values Fig 7. Amplifier A: drain current as a function of VDS and VGG; typical values 001aac886 20 ID (mA) 16 12 8 4 0 0 1 2 3 4 5 Vsupply (V) VG2-S = 4 V, Tj = 25 °C, RG1(B) = 68 kΩ (connected to ground); see Figure 3. Fig 8. Amplifier A: drain current of amplifier A as a function of supply voltage of A and B amplifier; typical values 9397 750 14955 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 28 July 2005 8 of 22 BF1207 Philips Semiconductors Dual N-channel dual gate MOSFET 001aac887 120 001aac888 0 gain reduction (dB) 10 Vunw (dBµV) 110 20 100 30 90 40 80 50 0 10 20 30 40 50 gain reduction (dB) 0 1 2 3 4 VAGC (V) VDS(A) = VDS(B) = 5 V; VG1-S(B) = 0 V; fw = 50 MHz; funw = 60 MHz; Tamb = 25 °C; see Figure 29. VDS(A) = VDS(B) = 5 V; VG1-S(B) = 0 V; f = 50 MHz; see Figure 29. Fig 9. Amplifier A: unwanted voltage for 1 % cross-modulation as a function of gain reduction; typical values Fig 10. Amplifier A: gain reduction as a function of AGC voltage; typical values 001aac889 32 ID (mA) 24 16 8 0 0 10 20 30 40 50 gain reduction (dB) VDS(A) = VDS(B) = 5 V; VG1-S(B) = 0 V; f = 50 MHz; Tamb = 25 °C; see Figure 29. Fig 11. Amplifier A: drain current as a function of gain reduction; typical values 9397 750 14955 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 28 July 2005 9 of 22 BF1207 Philips Semiconductors Dual N-channel dual gate MOSFET 001aac890 102 001aac891 102 −102 bis, gis (mS) ϕfs (deg) |yfs| |yfs| (mS) 10 bis 1 −10 10 ϕfs gis 10−1 10−2 10 102 1 103 10 −1 103 102 f (MHz) f (MHz) VDS(A) = 5 V; VG2-S = 4 V; VDS(B) = VG1-S(B) = 0 V; ID(A) = 18 mA. VDS(A) = 5 V; VG2-S = 4 V; VDS(B) = VG1-S(B) = 0 V; ID(A) = 18 mA. Fig 12. Amplifier A: input admittance as a function of frequency; typical values 001aac892 103 −103 ϕrs (deg) |yrs| (µS) ϕrs 102 −102 Fig 13. Amplifier A: forward transfer admittance and phase as a function of frequency; typical values 001aac893 10 bos, gos (mS) bos 1 |yrs| 10 1 10 102 103 −10 10−1 −1 10−2 gos 10 102 103 f (MHz) f (MHz) VDS(A) = 5 V; VG2-S = 4 V; VDS(B) = VG1-S(B) = 0 V; ID(A) = 18 mA. VDS(A) = 5 V; VG2-S = 4 V; VDS(B) = VG1-S(B) = 0 V; ID(A) = 18 mA. Fig 14. Amplifier A: reverse transfer admittance and phase as a function of frequency: typical values Fig 15. Amplifier A: output admittance as a function of frequency; typical values 9397 750 14955 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 28 July 2005 10 of 22 BF1207 Philips Semiconductors Dual N-channel dual gate MOSFET 8.1.2 Scattering parameters for amplifier A Table 9: Scattering parameters for amplifier A VDS(A) = 5 V; VG2-S = 4 V; ID(A) = 18 mA; VDS(B) = 0 V; VG1-S(B) = 0 V; Tamb = 25 °C; typical values. f s11 (MHz) Magnitude Angle (ratio) (deg) s21 s22 Magnitude (ratio) Angle (deg) Magnitude Angle (ratio) (deg) Magnitude Angle (ratio) (deg) 50 0.987 −4.169 2.87 175.5 0.0008 83.82 0.992 −1.42 100 0.983 −8.109 2.95 171.14 0.0015 82.08 0.992 −2.86 200 0.976 −15.97 2.93 162.44 0.0028 77.50 0.990 −5.66 300 0.966 −23.844 2.89 153.77 0.0041 73.45 0.989 −8.49 400 0.952 −31.575 2.84 145.23 0.0053 69.42 0.986 −11.28 500 0.935 −35.225 2.78 136.82 0.0063 65.72 0.984 −14.03 600 0.917 −46.678 2.72 128.50 0.0072 61.48 0.981 −16.80 700 0.898 −54.094 2.65 120.44 0.0079 58.05 0.977 −19.55 800 0.876 −61.205 2.57 112.33 0.0084 52.74 0.974 −22.32 900 0.852 −68.299 2.49 104.32 0.0089 48.61 0.970 −25.10 1000 0.826 −75.321 2.41 96.42 43.86 0.967 −27.88 9397 750 14955 Product data sheet s12 0.0091 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 28 July 2005 11 of 22 BF1207 Philips Semiconductors Dual N-channel dual gate MOSFET 8.2 Dynamic characteristics for amplifier B Table 10: Dynamic characteristics for amplifier B Common source; Tamb = 25 °C; VG2-S = 4 V; VDS = 5 V; ID = 14 mA. [1] Symbol Parameter Conditions Min Typ Max Unit yfs forward transfer admittance Tj = 25 °C 26 31 41 mS Ciss(G1) input capacitance at gate1 f = 100 MHz - 1.8 2.3 pF Ciss(G2) input capacitance at gate2 f = 1 MHz - 3.5 - pF Coss output capacitance f = 100 MHz - 0.8 - pF Crss reverse transfer capacitance f = 100 MHz - 20 - fF Gtr power gain f = 200 MHz; GS = 2 mS; GL = 0.5 mS 30 34 38 dB f = 400 MHz; GS = 2 mS; GL = 1 mS 27 31 35 dB f = 800 MHz; GS = 3.3 mS; GL = 1 mS 23 27 31 dB f = 11 MHz; GS = 20 mS; BS = 0 S - 5 - dB f = 400 MHz; YS = YS(opt) - 1.3 - dB - 1.4 - dB at 0 dB AGC 90 - - dBµV at 10 dB AGC - 88 - dBµV at 20 dB AGC - 94 - dBµV at 40 dB AGC 100 103 - dBµV NF noise figure BS = BS(opt); BL = BL(opt) f = 800 MHz; YS = YS(opt) Xmod cross-modulation input level for k = 1 %; fw = 50 MHz; funw = 60 MHz [1] For the MOSFET not in use: VG1-S(A) = 0 V; VDS(A) = 0 V. [2] Measured in Figure 30 test circuit. 9397 750 14955 Product data sheet [2] © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 28 July 2005 12 of 22 BF1207 Philips Semiconductors Dual N-channel dual gate MOSFET 8.2.1 Graphs for amplifier B 001aac894 30 ID (mA) (2) ID (mA) 001aac895 32 (1) (3) 24 (4) (1) 20 (2) (3) 16 (5) (4) (5) 10 (6) (6) 8 (7) (7) 0 0 0 0.4 0.8 1.2 1.6 2 VG1-S (V) 0 (1) VG1-S(B) = 1.7 V. (2) VG2-S = 3.5 V. (2) VG1-S(B) = 1.6 V. (3) VG2-S = 3 V. (3) VG1-S(B) = 1.5 V. (4) VG2-S = 2.5 V. (4) VG1-S(B) = 1.4 V. (5) VG2-S = 2 V. (5) VG1-S(B) = 1.3 V. (6) VG2-S = 1.5 V. (6) VG1-S(B) = 1.2 V. (7) VG2-S = 1 V. (7) VG1-S(B) = 1.1 V. 6 VG2-S = 4 V; VG1-S(A) = 0 V; Tj = 25 °C. Fig 16. Amplifier B: transfer characteristics; typical values Fig 17. Amplifier B: output characteristics; typical values 9397 750 14955 Product data sheet 4 VDS (V) (1) VG2-S = 4 V. VDS(B) = 5 V; VG1-S(A) = 0 V; Tj = 25 °C. 2 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 28 July 2005 13 of 22 BF1207 Philips Semiconductors Dual N-channel dual gate MOSFET 001aac896 40 001aac897 20 ID (mA) yfs (mS) (1) 16 30 (1) (2) (2) 12 (3) (4) 20 (5) 8 (3) 10 4 (4) (5) (7) 0 (6) 0 0 8 16 24 32 0 1 2 3 4 5 VG2-S (V) ID (mA) (1) VG2-S = 4 V. (1) VDS = 5 V. (2) VG2-S = 3.5 V. (2) VDS = 4.5 V. (3) VG2-S = 3 V. (3) VDS = 4 V. (4) VG2-S = 2.5 V. (4) VDS = 3.5 V. (5) VG2-S = 2 V. (5) VDS = 3 V. VG1-S(A) = 0 V; Tj = 25 °C. (6) VG2-S = 1.5 V. (7) VG2-S = 1 V. VDS(B) = 5 V; VG1-S(A) = 0 V; Tj = 25 °C. Fig 18. Amplifier B: forward transfer admittance as a function of drain current; typical values 001aac898 20 Fig 19. Amplifier B: drain current as function of gate2 voltage; typical values 001aac899 16 ID(A) (mA) 16 ID (mA) 12 12 8 8 4 4 0 0 2 4 6 0 −40 VDS(B) = 5 V; VG1-S(A) = 0 V; Tj = 25 °C. −20 −10 0 VDS(B) = 5 V; VG2-S = 4 V; VG1-S(A) = 0 V; Tj = 25 °C. Fig 20. Amplifier B: drain current as a function of drain source voltage; typical values Fig 21. Amplifier B: drain current as a function of gate1 current; typical values 9397 750 14955 Product data sheet −30 IG1 (µA) VDS (V) © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 28 July 2005 14 of 22 BF1207 Philips Semiconductors Dual N-channel dual gate MOSFET 001aac900 120 001aac901 0 gain reduction (dB) 10 Vunw (dBµV) 110 20 100 30 90 40 80 50 0 20 40 60 gain reduction (dB) 0 1 2 3 4 VAGC (V) VDS(B) = 5 V; VGG = 5 V; VDS(A) = VG1-S(A) = 0 V; RG1(B) = 150 kΩ (connected to VGG); fw = 50 MHz; funw = 60 MHz; Tamb = 25 °C; see Figure 30. VDS(B) = 5 V; VGG = 5 V; VDS(A) = VG1-S(A) = 0 V; RG1(B) = 150 kΩ (connected to VGG); f = 50 MHz; Tamb = 25 °C; see Figure 30. Fig 22. Amplifier B: unwanted voltage for 1 % cross-modulation as a function of gain reduction; typical values Fig 23. Amplifier B: typical gain reduction as a function of AGC voltage; typical values 001aac902 20 ID (mA) 16 12 8 4 0 0 20 40 60 gain reduction (dB) VDS(B) = 5 V; VGG = 5 V; VDS(A) = VG1-S(A) = 0 V; RG1(B) = 150 kΩ (connected to VGG); f = 50 MHz; Tamb = 25 °C; see Figure 30. Fig 24. Amplifier B: drain current as a function of gain reduction; typical values 9397 750 14955 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 28 July 2005 15 of 22 BF1207 Philips Semiconductors Dual N-channel dual gate MOSFET 001aac903 102 001aac904 102 −102 bis, gis (mS) |yfs| |yfs| (mS) 10 ϕfs (deg) bis 1 −10 10 ϕfs gis 10−1 10−2 10 102 1 103 10 −1 103 102 f (MHz) f (MHz) VDS(B) = 5 V; VG2-S = 4 V; VDS(A) = VG1-S(A) = 0 V; ID(B) = 14 mA. VDS(B) = 5 V; VG2-S = 4 V; VDS(A) = VG1-S(A) = 0 V; ID(B) = 14 mA. Fig 25. Amplifier B: input admittance as a function of frequency; typical values 001aac905 103 −103 ϕrs (deg) |yrs| (µS) ϕrs 102 −102 Fig 26. Amplifier B: forward transfer admittance and phase as a function of frequency; typical values 001aac906 10 bos, gos (mS) bos 1 |yrs| gos 10 1 10 102 103 −10 10−1 −1 10−2 10 102 103 f (MHz) f (MHz) VDS(B) = 5 V; VG2-S = 4 V; VDS(A) = VG1-S(A) = 0 V; ID(B) = 14 mA. VDS(B) = 5 V; VG2-S = 4 V; VDS(A) = VG1-S(A) = 0 V; ID(B) = 14 mA. Fig 27. Amplifier B: reverse transfer admittance and phase as a function of frequency; typical values Fig 28. Amplifier B: output admittance as a function of frequency; typical values 9397 750 14955 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 28 July 2005 16 of 22 BF1207 Philips Semiconductors Dual N-channel dual gate MOSFET 8.2.2 Scattering parameters for amplifier B Table 11: Scattering parameters for amplifier B VDS(B) = 5 V; VG2-S = 4 V; ID(B) = 14 mA; VDS(A) = 0 V; VG1-S(A) = 0 V; Tamb = 25 °C; typical values. f (MHz) s11 s21 Magnitude (ratio) Angle (deg) 50 0.993 −3.018 3.07 100 0.992 200 300 Magnitude (ratio) s12 Angle (deg) Angle (deg) Magnitude (ratio) Angle (deg) 176.04 0.0004 95.97 0.991 −1.39 −6.186 3.07 172.05 0.0011 90.33 0.990 −2.79 0.987 −12.43 3.09 164.13 0.0024 85.03 0.988 −5.49 0.979 −18.60 3.02 156.28 0.0036 82.94 0.986 −8.21 400 0.969 −24.62 2.99 148.48 0.0046 81.97 0.983 −10.91 500 0.957 −30.72 2.95 140.69 0.0056 81.03 0.980 −13.63 600 0.943 −36.71 2.90 132.87 0.0065 79.77 0.977 −16.40 700 0.927 −42.77 2.86 125.21 0.0074 79.04 0.973 −19.13 800 0.907 −48.91 2.79 117.22 0.0082 79.42 0.969 −21.93 900 0.885 −54.77 2.736 109.29 0.0086 75.47 0.964 −24.85 1000 0.858 −61.01 2.675 101.18 0.0092 73.48 0.958 −27.75 9397 750 14955 Product data sheet s22 Magnitude (ratio) © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 28 July 2005 17 of 22 BF1207 Philips Semiconductors Dual N-channel dual gate MOSFET 9. Test information VDS(B) VAGC 5V 4.7 nF 10 kΩ 4.7 nF 50 Ω DB G1B 4.7 nF G2 4.7 nF RGEN 50 Ω L1 2.2 µH BF1207 G1A 50 Ω S 4.7 nF DA L2 2.2 µH RG1 RL 50 Ω 4.7 nF Vi VDS(A) VGG 5V 5V 001aac907 Fig 29. Cross-modulation test set-up for amplifier A VDS(B) VAGC 5V 4.7 nF 10 kΩ 4.7 nF RGEN 50 Ω 50 Ω 4.7 nF G2 BF1207 G1A 50 Ω 4.7 nF DB G1B 4.7 nF Vi L1 2.2 µH RG1 RL 50 Ω S DA L2 2.2 µH 4.7 nF VGG VDS(A) 0V 5V 001aac908 Fig 30. Cross-modulation test set-up for amplifier B 9397 750 14955 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 28 July 2005 18 of 22 BF1207 Philips Semiconductors Dual N-channel dual gate MOSFET 10. Package outline Plastic surface mounted package; 6 leads SOT363 D E B y X A HE 6 5 v M A 4 Q pin 1 index A A1 1 2 e1 3 bp c Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w y mm 1.1 0.8 0.1 0.30 0.20 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.25 0.15 0.2 0.2 0.1 OUTLINE VERSION REFERENCES IEC SOT363 JEDEC JEITA SC-88 EUROPEAN PROJECTION ISSUE DATE 97-02-28 04-11-08 Fig 31. Package outline SOT363 9397 750 14955 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 28 July 2005 19 of 22 BF1207 Philips Semiconductors Dual N-channel dual gate MOSFET 11. Revision history Table 12: Revision history Document ID Release date Data sheet status Change notice Doc. number Supersedes BF1207_1 20050728 Product data sheet - 9397 750 14955 - 9397 750 14955 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 28 July 2005 20 of 22 BF1207 Philips Semiconductors Dual N-channel dual gate MOSFET 12. Data sheet status Level Data sheet status [1] Product status [2] [3] Definition I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. [3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 13. Definitions customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 15. Trademarks 14. Disclaimers Notice — All referenced brands, product names, service names and trademarks are the property of their respective owners. Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors 16. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: [email protected] 9397 750 14955 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 28 July 2005 21 of 22 BF1207 Philips Semiconductors Dual N-channel dual gate MOSFET 17. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 8.1.1 8.1.2 8.2 8.2.1 8.2.2 9 10 11 12 13 14 15 16 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 3 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Static characteristics. . . . . . . . . . . . . . . . . . . . . 4 Dynamic characteristics . . . . . . . . . . . . . . . . . . 6 Dynamic characteristics for amplifier A. . . . . . . 6 Graphs for amplifier A . . . . . . . . . . . . . . . . . . . . 7 Scattering parameters for amplifier A . . . . . . . 11 Dynamic characteristics for amplifier B. . . . . . 12 Graphs for amplifier B . . . . . . . . . . . . . . . . . . . 13 Scattering parameters for amplifier B . . . . . . . 17 Test information . . . . . . . . . . . . . . . . . . . . . . . . 18 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 19 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 20 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 21 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Contact information . . . . . . . . . . . . . . . . . . . . 21 © Koninklijke Philips Electronics N.V. 2005 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 28 July 2005 Document number: 9397 750 14955 Published in The Netherlands