Comset BD201 Silcon epitaxial-base power transistor Datasheet

NPN BD201 – BD203
SILCON EPITAXIAL-BASE POWER TRANSISTORS
The BD201 and BD203 are NPN transistors mounted in Jedec TO-220 plastic package.
They are primarily intended for use in if-hi equipment delivering an output of 15 to 25 W
into 4Ω or 8Ω load.
PNP complements are BD202 and BD204
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCEO
Collector-Emitter Voltage
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
IC
ICSM
IB
PD
TJ
TStg
Value
BD201
BD203
BD201
BD203
IC
Collector Current
ICM
Collector Current (non-repetitive peak value,tp max.2 ms)
Base Current
Total Device Dissipation
@ TC = 25°
Junction Temperature
Storage Temperature range
Unit
45
60
60
60
5.0
8
12
25
3
60
150
-65 to +200
V
A
A
A
A
W
°C
°C
Value
Unit
70
K/W
2.08
K/W
V
V
THERMAL CHARACTERISTICS
Symbol
Ratings
RthJ-a
Thermal Resistance, Junction to mounting base
RthJ-mb
Thermal Resistance, Junction to ambient in free air
COMSET SEMICONDUCTORS
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NPN BD201 – BD203
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
ICEO
ICBO
IEBO
VCBO
VCEO
VEBO
VCE(SAT)
VBE(SAT)
VBE
hFE
fhfe
fT
Is/b
hFE1/hFE2
ton
Toff
Ratings
Test Condition(s)
BD201
BD203
BD201
Collector Cutoff Current
VCB=40 V, IE=0V
Tj=150°C
BD203
BD201
Emitter Cutoff Current
VBE=5 V, IC=0
BD203
BD201
Collector-Base Breakdown
IC=1 m A, IE= 0
Voltage
BD203
BD201
Collector Emitter
IC=200 m A, IB= 0
Breakdown Voltage (*)
BD203
BD201
Emitter Base Breakdown
IE =1 mA, IC =0
Voltage
BD203
BD201
I =3 A, IB=300 mA
BD203
Collector-Emitter saturation C
Voltage (*)
BD201
IC=6 A, IB=600 mA
BD203
BD201
Base-Emitter saturation
IC=6 A, IB=600 mA
Voltage (*)
BD203
BD201
Base Emitter Voltage (*)
IC=3 A, VCE=2 V
BD203
IC=3 A, VCE=2 V
BD201
DC Current Gain (*)
IC=2 A, VCE=2 V
BD203
BD201
Cut-off frequency
IC=300 mA, VCE=3 V
BD203
IC=300 mA, VCE=3 V BD201
Transition frequency
f= 1MHz
BD203
Forward bias second
BD201
VCE=40 V,tp= 0.1 s
breakdown collector
Tamb= 25 °C
BD203
current
BD201
DC current gain
IC=1 A, VCE=2 V
BD203
BD201
Turn-on time
BD203
ICon=2 A
IBon = -IBoff =200 mA BD201
Turn-off time
BD203
Collector Cutoff Current
VCE=30 V, IB=0V
Min
Typ
Max
Unit
-
-
0.2
mA
-
-
1
mA
-
-
0.5
mA
60
-
-
V
45
60
-
-
V
5
-
-
V
-
-
1
-
-
1.5
-
-
2
-
-
1.5
V
30
30
-
-
-
25
-
-
KHz
7
-
-
MHz
1.5
-
-
A
2.5
-
-
-
-
-
1
-
-
4
V
µs
(*) Pulse conditions : tp < 300 µs, δ =2%
18/10/2012
COMSET SEMICONDUCTORS
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NPN BD201 – BD203
MECHANICAL DATA CASE TO-220
DIMENSIONS (mm)
Min.
A
B
C
D
E
F
G
H
L
M
N
P
R
S
T
U
Max.
9,90
15,65
13,20
6,45
4,30
2,70
2,60
15,75
1,15
3,50
0,46
2,50
4,98
2.49
0,70
Pin 1 :
Pin 2 :
Pin 3 :
Case :
10,30
15,90
13,40
6,65
4,50
3,15
3,00
17.15
1,40
3,70
1,37
0,55
2,70
5,08
2.54
0,90
Base
Collector
Emitter
Collector
Revised September 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and
all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical
components in life support devices or systems.
www.comsetsemi.com
18/10/2012
[email protected]
COMSET SEMICONDUCTORS
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