NPN BD201 – BD203 SILCON EPITAXIAL-BASE POWER TRANSISTORS The BD201 and BD203 are NPN transistors mounted in Jedec TO-220 plastic package. They are primarily intended for use in if-hi equipment delivering an output of 15 to 25 W into 4Ω or 8Ω load. PNP complements are BD202 and BD204 Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage IC ICSM IB PD TJ TStg Value BD201 BD203 BD201 BD203 IC Collector Current ICM Collector Current (non-repetitive peak value,tp max.2 ms) Base Current Total Device Dissipation @ TC = 25° Junction Temperature Storage Temperature range Unit 45 60 60 60 5.0 8 12 25 3 60 150 -65 to +200 V A A A A W °C °C Value Unit 70 K/W 2.08 K/W V V THERMAL CHARACTERISTICS Symbol Ratings RthJ-a Thermal Resistance, Junction to mounting base RthJ-mb Thermal Resistance, Junction to ambient in free air COMSET SEMICONDUCTORS 1/3 NPN BD201 – BD203 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol ICEO ICBO IEBO VCBO VCEO VEBO VCE(SAT) VBE(SAT) VBE hFE fhfe fT Is/b hFE1/hFE2 ton Toff Ratings Test Condition(s) BD201 BD203 BD201 Collector Cutoff Current VCB=40 V, IE=0V Tj=150°C BD203 BD201 Emitter Cutoff Current VBE=5 V, IC=0 BD203 BD201 Collector-Base Breakdown IC=1 m A, IE= 0 Voltage BD203 BD201 Collector Emitter IC=200 m A, IB= 0 Breakdown Voltage (*) BD203 BD201 Emitter Base Breakdown IE =1 mA, IC =0 Voltage BD203 BD201 I =3 A, IB=300 mA BD203 Collector-Emitter saturation C Voltage (*) BD201 IC=6 A, IB=600 mA BD203 BD201 Base-Emitter saturation IC=6 A, IB=600 mA Voltage (*) BD203 BD201 Base Emitter Voltage (*) IC=3 A, VCE=2 V BD203 IC=3 A, VCE=2 V BD201 DC Current Gain (*) IC=2 A, VCE=2 V BD203 BD201 Cut-off frequency IC=300 mA, VCE=3 V BD203 IC=300 mA, VCE=3 V BD201 Transition frequency f= 1MHz BD203 Forward bias second BD201 VCE=40 V,tp= 0.1 s breakdown collector Tamb= 25 °C BD203 current BD201 DC current gain IC=1 A, VCE=2 V BD203 BD201 Turn-on time BD203 ICon=2 A IBon = -IBoff =200 mA BD201 Turn-off time BD203 Collector Cutoff Current VCE=30 V, IB=0V Min Typ Max Unit - - 0.2 mA - - 1 mA - - 0.5 mA 60 - - V 45 60 - - V 5 - - V - - 1 - - 1.5 - - 2 - - 1.5 V 30 30 - - - 25 - - KHz 7 - - MHz 1.5 - - A 2.5 - - - - - 1 - - 4 V µs (*) Pulse conditions : tp < 300 µs, δ =2% 18/10/2012 COMSET SEMICONDUCTORS 3/3 NPN BD201 – BD203 MECHANICAL DATA CASE TO-220 DIMENSIONS (mm) Min. A B C D E F G H L M N P R S T U Max. 9,90 15,65 13,20 6,45 4,30 2,70 2,60 15,75 1,15 3,50 0,46 2,50 4,98 2.49 0,70 Pin 1 : Pin 2 : Pin 3 : Case : 10,30 15,90 13,40 6,65 4,50 3,15 3,00 17.15 1,40 3,70 1,37 0,55 2,70 5,08 2.54 0,90 Base Collector Emitter Collector Revised September 2012 Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical components in life support devices or systems. www.comsetsemi.com 18/10/2012 [email protected] COMSET SEMICONDUCTORS 3/3