Diotech GDZJ12 500mw epitaxial zener diode Datasheet

GDZJ - SERIES
500mW EPITAXIAL ZENER DIODE
FEATURES
DO-35
0.2
3.8 ± 0.2
26 ± 1
Φ 0.5 ±
0.1
• Planar die construction
• 500mW Power Dissipation
• Ideally Suited for Automated Assembly Processes
• High temperature soldering : 260°C /10 seconds at terminals
• Glass package has Underwriters Laboratory Flammability
Classification
• In compliance with EU RoHS 2002/95/EC directives
Φ 1.8 ±
MECHANICAL DATA
26 ± 1
• Case: Molded Glass DO-35
• Terminals: Axial leads, solderable per MIL-STD-202G, Method 208
• Polarity: See Diagram Below
• Mounting position:Any
• Weight: 0.13 gram
All Dimensions in mm
ABSOLUTE MAXIMUM RATINGS(LIMITING VALUES)(TA=25℃)
Symbols
Value
Units
Ptot
500
mW
TJ
175
TSTG
-65 to +175
℃
℃
Zener current see table "Characteristics"
Power dissipation at TA=25℃
Junction temperature
Storage temperature range
1)Valid provided that a distance of 8mm from case are kept at ambient temperature
ELECTRCAL CHARACTERISTICS(TA=25℃)
Symbols
Thermal resistance junction to ambient
Forward voltage at IF=100mA
Min
Max
Units
RthA
0.3
K / mW
VF
1.0
V
1) Valid provided that a distance at 8mm from case are kept at ambient temperature
Typ
GDZJ - SERIES
500mW EPITAXIAL ZENER DIODE
Part Number
GDZJ 2.0
GDZJ 2.2
GDZJ 2.4
GDZJ 2.7
GDZJ 3.0
GDZJ 3.3
GDZJ 3.6
GDZJ 3.9
GDZJ 4.3
GDZJ 4.7
GDZJ 5.1
GDZJ 5.6
GDZJ 6.2
GDZJ 6.8
GDZJ 7.5
GDZJ 8.2
GDZJ 9.1
GDZJ 10
GDZJ 11
C LA S S
V Z @ IZT
M i n. V
M a x. V
A
1.88
2.10
B
2.02
2.20
A
2.12
2.30
B
2.22
2.41
A
2.33
2.52
B
2.43
2.63
A
2.54
2.75
B
2.69
2.91
A
2.85
3.07
B
3.01
3.22
A
3.16
3.38
B
3.32
3.53
A
3.455
3.695
B
3.60
3.845
A
3.74
4.01
B
3.89
4.16
A
4.04
4.29
IZ
(m A )
VR
(V )
IR ( u A )
MA X
Iz t
(mA )
Z ZT ( Ω )
MA X
Iz k
(mA )
Z ZK ( Ω )
MA X
5
0.5
120
5
100
0.5
1000
5
0.7
100
5
100
0.5
1000
5
1.0
120
5
100
0.5
1000
5
1.0
100
5
110
0.5
1000
5
1.0
50
5
120
0.5
1000
5
1.0
20
5
120
0.5
1000
5
5
1.0
1.0
10
5
5
5
100
100
1
1
1000
1000
M A RK ING
C OD E
Z2A0
Z2B0
Z2A2
Z2B2
Z2A4
Z2B4
Z2A7
Z2B7
Z3A0
Z3B0
Z3A3
Z3B3
Z3A6
Z3B6
Z3A9
Z3B9
Z4A3
B
4.17
4.43
C
4.30
4.57
A
4.44
4.68
B
4.55
4.80
C
4.68
4.93
A
4.81
5.07
B
4.94
5.20
C
5.09
5.37
A
5.28
5.55
B
5.45
5.73
C
5.61
5.91
Z5C6
A
5.78
6.09
Z6A2
B
5.96
6.27
C
6.12
6.44
A
6.29
6.63
B
6.49
6.83
C
6.66
7.01
A
6.85
7.22
B
7.07
7.45
C
7.29
7.67
A
7.53
7.92
B
7.78
8.19
C
8.03
8.45
A
8.29
8.73
B
8.57
9.01
C
8.83
9.30
5
1.0
5
5
100
1
1000
Z4B3
Z4C3
Z4A7
5
1.0
5
5
90
1
900
Z4B7
Z4C7
Z5A1
5
1.5
5
5
80
1
800
Z5B1
Z5C1
Z5A6
5
5
2.5
3.0
5
5
5
5
60
60
1
1
500
300
Z5B6
Z6B2
Z6C2
Z6A8
5
3.5
2
5
20
0.5
150
Z6B8
Z6C8
Z7A5
5
4.0
0.5
5
20
0.5
120
Z7B5
Z7C5
Z8A2
5
5.0
0.5
5
20
0.5
120
Z8B2
Z8C2
Z9A1
5
6.0
0.5
5
25
0.5
120
Z9B1
Z9C1
A
9.12
9.59
Z10A
B
9.41
9.90
Z10B
C
9.70
10.20
D
9.94
10.44
A
10.18
10.71
B
10.50
11.05
C
10.82
11.38
5
7.0
0.2
5
30
0.5
120
Z10C
Z11D
Z11A
5
8.0
0.2
5
30
0.5
120
Z11B
Z11C
GDZJ - SERIES
500mW EPITAXIAL ZENER DIODE
Part Number
GDZJ 12
GDZJ 13
GDZJ 15
GDZJ 16
GDZJ 18
GDZJ 20
GDZJ 22
GDZJ 24
GDZJ 27
GDZJ 30
LA S S
V Z @ IZT
M i n. V
M a x. V
A
11.13
11.71
B
11.44
12.03
C
11.74
12.35
A
12.11
12.75
B
12.55
13.21
C
12.99
13.66
A
13.44
14.13
B
13.89
14.62
C
14.35
15.09
A
14.80
15.57
B
15.25
16.04
C
15.69
16.51
A
16.22
17.06
B
16.82
17.70
IZ
(m A )
VR
(V )
IR ( u A )
MA X
Iz t
(mA )
Z ZT ( Ω )
MA X
Iz k
(mA )
Z ZK ( Ω )
MA X
5
9.0
0.2
5
30
0.5
110
M A RK ING
C OD E
Z12A
Z12B
Z12C
Z13A
5
10
0.2
5
35
0.5
110
Z13B
Z13C
Z15A
5
11
0.2
5
40
0.5
110
Z15B
Z15C
Z16A
5
12
0.2
5
40
0.5
150
Z16B
Z16C
Z18A
5
13
0.2
5
45
0.5
150
Z18B
C
17.42
18.33
A
18.02
18.96
Z18C
Z20A
B
18.63
19.59
Z20B
C
19.23
20.22
D
19.72
20.72
A
20.15
21.20
Z22A
B
20.64
21.71
Z22B
C
21.08
22.17
D
21.52
22.63
Z22D
A
22.05
23.18
Z24A
B
22.61
23.77
C
23.12
24.31
5
15
0.2
5
55
0.5
200
Z20C
Z20D
5
5
17
19
0.2
0.2
5
5
30
35
0.5
0.5
200
200
Z22C
Z24B
Z24C
D
23.63
24.85
Z24D
A
24.26
25.52
Z27A
B
24.97
26.26
C
25.63
26.95
5
21
0.2
5
45
0.5
250
Z27B
Z27C
D
26.29
27.64
Z27D
A
26.99
28.39
Z30A
B
27.70
29.13
C
28.36
29.82
5
23
0.2
5
55
0.5
250
Z30B
Z30C
D
29.02
30.51
A
29.68
31.22
Z33A
B
30.32
31.88
Z33B
C
30.90
32.50
D
31.49
33.11
Z33D
A
32.14
33.79
Z36A
B
32.79
34.49
C
33.40
35.13
D
34.01
35.77
A
34.68
36.47
Z39A
B
35.36
37.19
Z39B
C
36.00
37.85
D
36.63
38.52
GDZJ 43
40.00
GDZJ 47
44.00
GDZJ 51
48.00
54.00
5
39
0.2
5
110
GDZJ 56
53.00
60.00
5
43
0.2
5
110
GDZJ 33
GDZJ 36
GDZJ 39
Z30D
5
5
25
27
0.2
0.2
5
5
65
75
0.5
0.5
250
250
Z33C
Z36B
Z36C
Z36D
5
30
0.2
5
85
0.5
250
45.00
5
33
0.2
5
90
--
--
Z43
49.00
5
36
0.2
5
90
--
--
Z47
--
--
Z51
--
--
Z56
Z39C
Z39D
GDZJ - SERIES
500
1.3
V Ztn – R elative Voltage Change
R thJA –Therm.R esist. Junction/Ambient ( K /W )
RATINGS AND CHARACTERISTIC CURVES
400
300
l
l
200
100
V Ztn=V Zt/VZ(25°C)
1.2
TK VZ =10 x 10–4/K
8 x 10–4/K
6 x 10–4/K
1.1
4 x 10–4/K
2 x 10–4/K
0
1.0
–2 x 10–4/K
–4 x 10–4/K
0.9
TL =constant
0
0
5
10
0.8
–60
20
15
l – Lead Length ( mm )
600
500
400
300
200
100
0
40
80
120
160
120
180
240
200
15
10
5
I Z=5mA
0
–5
0
10
Tamb – Ambient Temperature(°C )
20
30
40
50
V Z – Z-Voltag e ( V )
Fig. 2 Total Power Dissipation vs. Ambient Temperature
Fig. 5 Temperature Coefficient of Vz vs. Z-Voltage
1000
200
CD – Diode Capacitance ( pF )
VZ – Voltage Change ( mV )
60
Fig. 4 Typical Change of Working Voltage vs. Junction
Temperature
TK V Z – Temperature Coefficient of V Z ( 10– 4 /K)
Ptot – Total Power Dissipation ( mW)
Fig. 1 Thermal Resistance vs. Lead Length
0
0
Tj – Junction Temperature (°C )
Tj =25°C
100
I Z=5mA
10
1
150
V R=2V
Tj =25°C
100
50
0
0
5
10
15
20
25
V Z – Z-Voltag e ( V )
Fig. 3 Typical Change of Working Voltage under Operating
Conditions at Tamb=25°C
0
5
10
15
20
V Z – Z-Voltag e ( V )
Fig. 6 Diode Capacitance vs. Z-Voltage
25
GDZJ - SERIES
100
50
10
40
I Z – Z- Current (mA )
I F – Forward Current ( mA )
RATINGS AND CHARACTERISTIC CURVES
Tj =25°C
1
0.1
0.01
Ptot=500mW
Tamb=25°C
30
20
10
0.001
0
0
0.2
0.4
0.6
0.8
1.0
15
20
V F – Forward Voltage ( V )
Fig. 9 Z-Current vs. Z-Voltage
r Z – Differential Z- R esistance ( Ω )
I Z – Z- Current (mA )
100
80
Ptot=500mW
Tamb=25°C
60
40
20
0
1000
I Z=1mA
100
5mA
10 10mA
Tj =25°C
1
0
4
8
12
16
20
0
V Z – Z-Voltage ( V )
5
10
tp/T=0.5
tp/T=0.2
Single Pulse
RthJA=300K/W
T=Tjmax–Tamb
tp/T=0.01
tp/T=0.1
tp/T=0.02
tp/T=0.05
1
10–1
iZM =(–VZ+(VZ2+4rzj x T/Zthp)1/2)/(2rzj)
100
101
tp – Pulse Length ( ms )
Fig. 11 Thermal Response
20
25
Fig. 10 Differential Z-Resistance vs. Z-Voltage
1000
10
15
V Z – Z-Voltage ( V )
Fig. 8 Z-Current vs. Z-Voltage
100
35
30
V Z – Z-Voltag e ( V )
Fig. 7 Forward Current vs. Forward Voltage
Zthp– Thermal R esistance for Pulse Cond.(K/W )
25
102
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