Diodes MMDT2227M Complementary npn / pnp small signal surface mount transistor Datasheet

MMDT2227M
Lead-free Green
COMPLEMENTARY NPN / PNP SMALL
SIGNAL SURFACE MOUNT TRANSISTOR
Features
·
·
·
A
Complementary Pair
Epitaxial Planar Die Construction
C2
B1
SOT-26
E1
One 2222A Type (NPN),
One 2907A Type (PNP)
·
·
·
B C
Ideal for Low Power Amplification and Switching
E2
Lead Free By Design/RoHS Compliant (Note 2)
"Green Device" (Note 3)
B2
C1
H
Min
Max
Typ
A
0.35
0.50
0.38
B
1.50
1.70
1.60
C
2.70
3.00
2.80
D
¾
¾
0.95
F
¾
¾
0.55
H
2.90
3.10
3.00
J
0.013 0.10
0.05
Case: SOT-26
K
1.00
1.30
1.10
Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
L
0.35
0.55
0.40
M
0.10
0.20
0.15
a
0°
8°
¾
K
Mechanical Data
·
·
Dim
M
J
·
·
Moisture Sensitivity: Level 1 per J-STD-020C
·
·
·
·
Terminal Connections: See Diagram
Terminals: Finish - Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
D
F
L
Note: E1, B1, and C1 = 2907A Type (PNP),
E2, B2, and C2 = 2222A Type (NPN).
Type marking indicates orientation.
C2
B1
E1
E2
B2
C1
All Dimensions in mm
Ordering & Date Code Information: See Page 3
Marking (See Page 3): K27
Weight: 0.006 grams (approximate)
Maximum Ratings, 2222A Type (NPN)
Characteristic
@ TA = 25°C unless otherwise specified
Symbol
2222A (NPN)
Unit
Collector-Base Voltage
VCBO
75
V
Collector-Emitter Voltage
VCEO
40
V
Emitter-Base Voltage
VEBO
6.0
V
IC
600
mA
Collector Current - Continuous
Maximum Ratings, 2907A Type (PNP)
Characteristic
@ TA = 25°C unless otherwise specified
Symbol
2907A (PNP)
Unit
Collector-Base Voltage
VCBO
-60
V
Collector-Emitter Voltage
VCEO
-60
V
Emitter-Base Voltage
VEBO
-5.0
V
IC
-600
mA
Symbol
Value
Unit
Pd
300
mW
RqJA
417
°C/W
Tj, TSTG
-55 to +150
°C
Collector Current - Continuous
Maximum Ratings, Total
@ TA = 25°C unless otherwise specified
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Note:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
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MMDT2227M
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Electrical Characteristics, 2222A Type (NPN)
Characteristic
@ TA = 25°C unless otherwise specified
Symbol
Min
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
V(BR)CBO
75
¾
V
IC = 10mA, IE = 0
Collector-Emitter Breakdown Voltage
V(BR)CEO
40
¾
V
IC = 10mA, IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
6.0
¾
V
IE = 10mA, IC = 0
VCB = 60V, IE = 0
VCB = 60V, IE = 0, TA = 150°C
OFF CHARACTERISTICS (Note 4)
Collector Cutoff Current
ICBO
¾
10
nA
mA
Collector Cutoff Current
ICEX
¾
10
nA
VCE = 60V, VEB(OFF) = 3.0V
Emitter Cutoff Current
IEBO
¾
10
nA
VEB = 3.0V, IC = 0
IBL
¾
20
nA
VCE = 60V, VEB(OFF) = 3.0V
hFE
35
50
75
100
40
50
35
¾
¾
¾
300
¾
¾
¾
¾
IC = 100mA, VCE = 10V
IC = 1.0mA, VCE = 10V
IC = 10mA, VCE = 10V
IC = 150mA, VCE = 10V
IC = 500mA, VCE = 10V
IC = 10mA, VCE = 10V, TA = -55°C
IC = 150mA, VCE = 1.0V
Collector-Emitter Saturation Voltage
VCE(SAT)
¾
0.3
1.0
V
IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
Base-Emitter Saturation Voltage
VBE(SAT)
0.6
¾
1.2
2.0
V
IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
Output Capacitance
Cobo
¾
8
pF
VCB = 10V, f = 1.0MHz, IE = 0
Input Capacitance
Cibo
—
25
pF
VEB = 0.5V, f = 1.0MHz, IC = 0
fT
300
¾
MHz
Delay Time
td
¾
10
ns
Rise Time
tr
¾
25
ns
Storage Time
ts
¾
225
ns
Fall Time
tf
¾
60
ns
Base Cutoff Current
ON CHARACTERISTICS (Note 4)
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
VCE = 20V, IC = 20mA,
f = 100MHz
SWITCHING CHARACTERISTICS
Note:
VCC = 30V, IC = 150mA,
VBE(off) = - 0.5V, IB1 = 15mA
VCC = 30V, IC = 150mA,
IB1 = IB2 = 15mA
4. Pulse test: Pulse width £ 300ms, duty cycle £ 2%.
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MMDT2227M
Electrical Characteristics, 2907A Type (PNP)
Characteristic
@ TA = 25°C unless otherwise specified
Symbol
Min
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
V(BR)CBO
-60
¾
V
IC = -10mA, IE = 0
Collector-Emitter Breakdown Voltage
V(BR)CEO
-60
¾
V
IC = -10mA, IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
-5.0
¾
V
IE = -10mA, IC = 0
VCB = -50V, IE = 0
VCB = -50V, IE = 0, TA = 125°C
OFF CHARACTERISTICS (Note 5)
Collector Cutoff Current
ICBO
¾
-10
nA
mA
Collector Cutoff Current
ICEX
¾
-50
nA
VCE = -30V, VEB(OFF) = -0.5V
IBL
¾
-50
nA
VCE = -30V, VEB(OFF) = -0.5V
hFE
75
100
100
100
50
¾
¾
¾
300
¾
¾
IC = -100µA, VCE =
IC = -1.0mA, VCE =
IC = -10mA, VCE =
IC = -150mA, VCE =
IC = -500mA, VCE =
Collector-Emitter Saturation Voltage
VCE(SAT)
¾
-0.4
-1.6
V
IC = -150mA, IB = -15mA
IC = -500mA, IB = -50mA
Base-Emitter Saturation Voltage
VBE(SAT)
¾
-1.3
-2.6
V
IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
Output Capacitance
Cobo
¾
8.0
pF
VCB = -10V, f = 1.0MHz, IE = 0
Input Capacitance
Cibo
—
30
pF
VEB = -2.0V, f = 1.0MHz, IC = 0
fT
200
¾
MHz
Turn-On Time
ton
¾
45
ns
Delay Time
td
¾
10
ns
Rise Time
tr
¾
40
ns
Turn-Off Time
toff
¾
100
ns
Storage Time
ts
¾
80
ns
Fall Time
tf
¾
30
ns
Base Cutoff Current
ON CHARACTERISTICS (Note 5)
DC Current Gain
-10V
-10V
-10V
-10V
-10V
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
VCE = -20V, IC = -50mA,
f = 100MHz
SWITCHING CHARACTERISTICS
Note:
VCC = -6.0V, IC = -150mA,
IB1 = IB2 = -15mA
5. Short duration pulse test used to minimize self-heating effect.
Ordering Information
Note:
VCC = -30V, IC = -150mA,
IB1 = -15mA
(Note 6)
Device
Packaging
Shipping
MMDT2227M-7
SOT-26
3000/Tape & Reel
6. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
YM
K27 = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: S = 2005
M = Month ex: 9 = September
K27
Date Code Key
Year
2005
2006
2007
2008
2009
2010
2011
2012
Code
S
T
U
V
W
X
Y
Z
Month
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
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2.0
VCE COLLECTOR-EMITTER VOLTAGE (V)
CAPACITANCE (pF)
100
Cibo
10
Cobo
1.0
0.1
1.0
10
IC = 30mA
1.8
IC = 1mA
IC = 10mA
1.6
IC = 100mA
1.4
IC = 300mA
1.2
1.0
0.8
0.6
0.4
0.2
0
0.001
50
VR, REVERSE VOLTS (V)
Fig. 1 (2222A) Typical Capacitance
VCE COLLECTOR-EMITTER VOLTAGE (V)
CAPACITANCE (pF)
Cibo
10
Cobo
1
10
100
-1.6
10
IC = -10mA
-1.4
IC = -300mA
IC = -100mA
IC = -1mA
-1.2
IC = -30mA
-1.0
-0.8
-0.6
-0.4
-0.2
1
1
0.1
IB, BASE CURRENT (mA)
Fig. 2 (2222A) Typical Collector Saturation Region
100
0.1
0.01
100
0
-0.001
-0.01
-0.1
-1
-10
-100
IB, BASE CURRENT (mA)
Fig. 4 (2907A) Typical Collector Saturation Region
VR, REVERSE VOLTS (V)
Fig. 3 (2907A) Typical Capacitance
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further
notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither
does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will
agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the
President of Diodes Incorporated.
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MMDT2227M
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