UTC BC556 Switching and amplifier application Datasheet

UNISONIC TECHNOLOGIES CO., LTD
BC556/557/558
PNP SILICON TRANSISTOR
SWITCHING AND AMPLIFIER
APPLICATIONS
„
FEATURES
* High Voltage: BC556, VCEO=-65V
1
TO-92
„
ORDERING INFORMATION
Normal
BC556-x-T92-B
BC556-x-T92-K
BC557-x-T92-B
BC557-x-T92-K
BC558-x-T92-B
BC558-x-T92-K
Ordering Number
Lead Free Plating
BC556L-x-T92-B
BC556L-x-T92-K
BC557L-x-T92-B
BC557L-x-T92-K
BC558L-x-T92-B
BC558L-x-T92-K
Halogen Free
BC556G-x-T92-B
BC556G-x-T92-K
BC557G-x-T92-B
BC557G-x-T92-K
BC558G-x-T92-B
BC558G-x-T92-K
www.unisonic.com.tw
Copyright © 2010 Unisonic Technologies Co., Ltd
Package
TO-92
TO-92
TO-92
TO-92
TO-92
TO-92
Pin Assignment
1
2
3
C
B
E
C
B
E
C
B
E
C
B
E
C
B
E
C
B
E
Packing
Tape Box
Bulk
Tape Box
Bulk
Tape Box
Bulk
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BC556/557/558
„
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
-80
V
Collector-Base Voltage
VCBO
-50
V
-30
V
-65
V
Collector-Emitter Voltage
VCEO
-45
V
-30
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current (DC)
IC
-100
mA
Power Collector Dissipation
625
mW
PC
Linear Derating Factor above (Ta=25°C)
5
mW/°C
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
BC556
BC557
BC558
BC556
BC557
BC558
„
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
„
SYMBOL
θJA
θJc
UNIT
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
BC556
Collector-Emitter Breakdown Voltage BC557
BC558
BC556
Collector-Base Breakdown Voltage
BC557
BC558
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
DC Current Gain
TEST CONDITIONS
BVCEO
IC=-10mA, IB=0
BVCBO
IC=-100μA
BVEBO
ICBO
hFE
IE=-10μA, IC=0
IE = 0, VCB =-30 V
VCE =-5V, IC=2mA
IC =-10mA, IB=-0.5mA
IC =-100mA, IB=-5mA
IC =-10mA, IB =-0.5mA
IC =-100mA, IB=-5mA
VCE =-5 V,IC=-2mA
VCE =-5 V,IC=-10mA
VCE=-5V, IC=-10mA, f =10MHz
VCB=-10V, IE=0, f=1MHz
VCE=-5V, IC=-200μA
f=1KHz, RG=2KΩ
Collector-Emitter Saturation Voltage
VCE(SAT)
Base-Emitter Saturation Voltage
VBE(SAT)
Base-Emitter Turn-On Voltage
VBE(ON)
Current Gain Bandwidth Product
Output Capacitance
fT
COB
Noise Figure
NF
„
RATINGS
200
83.3
MIN
-65
-45
-30
-80
-50
-30
-5.0
TYP MAX UNIT
V
V
V
V
V
V
V
-15
nA
110
800
-90 -300 mV
-250 -650 mV
-700
mV
-900
mV
-600 -660 -750 mV
-800 mV
150
MHz
6
pF
2
10
dB
CLASSIFICATION OF hFE
RANK
hFE
A
110 - 220
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
B
200 - 450
C
420 - 800
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QW-R201-051.C
Collector Current, IC (mA)
Saturation Voltage, VBE(SAT), VCE(SAT)
DC Current Gain, hFE
Collector Current, IC (mA)
„
Current Gain-Bandwidth Product,fT (MHz)
Capacitance,C (pF)
BC556/557/558
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
PNP SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
QW-R201-051.C
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BC556/557/558
PNP SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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