UNISONIC TECHNOLOGIES CO., LTD BC556/557/558 PNP SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS FEATURES * High Voltage: BC556, VCEO=-65V 1 TO-92 ORDERING INFORMATION Normal BC556-x-T92-B BC556-x-T92-K BC557-x-T92-B BC557-x-T92-K BC558-x-T92-B BC558-x-T92-K Ordering Number Lead Free Plating BC556L-x-T92-B BC556L-x-T92-K BC557L-x-T92-B BC557L-x-T92-K BC558L-x-T92-B BC558L-x-T92-K Halogen Free BC556G-x-T92-B BC556G-x-T92-K BC557G-x-T92-B BC557G-x-T92-K BC558G-x-T92-B BC558G-x-T92-K www.unisonic.com.tw Copyright © 2010 Unisonic Technologies Co., Ltd Package TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 Pin Assignment 1 2 3 C B E C B E C B E C B E C B E C B E Packing Tape Box Bulk Tape Box Bulk Tape Box Bulk 1 of 4 QW-R201-051.C BC556/557/558 PNP SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (Ta=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT -80 V Collector-Base Voltage VCBO -50 V -30 V -65 V Collector-Emitter Voltage VCEO -45 V -30 V Emitter-Base Voltage VEBO -5 V Collector Current (DC) IC -100 mA Power Collector Dissipation 625 mW PC Linear Derating Factor above (Ta=25°C) 5 mW/°C Junction Temperature TJ 150 °C Storage Temperature TSTG -55~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. BC556 BC557 BC558 BC556 BC557 BC558 THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL θJA θJc UNIT °C/W °C/W ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) PARAMETER SYMBOL BC556 Collector-Emitter Breakdown Voltage BC557 BC558 BC556 Collector-Base Breakdown Voltage BC557 BC558 Emitter-Base Breakdown Voltage Collector Cut-Off Current DC Current Gain TEST CONDITIONS BVCEO IC=-10mA, IB=0 BVCBO IC=-100μA BVEBO ICBO hFE IE=-10μA, IC=0 IE = 0, VCB =-30 V VCE =-5V, IC=2mA IC =-10mA, IB=-0.5mA IC =-100mA, IB=-5mA IC =-10mA, IB =-0.5mA IC =-100mA, IB=-5mA VCE =-5 V,IC=-2mA VCE =-5 V,IC=-10mA VCE=-5V, IC=-10mA, f =10MHz VCB=-10V, IE=0, f=1MHz VCE=-5V, IC=-200μA f=1KHz, RG=2KΩ Collector-Emitter Saturation Voltage VCE(SAT) Base-Emitter Saturation Voltage VBE(SAT) Base-Emitter Turn-On Voltage VBE(ON) Current Gain Bandwidth Product Output Capacitance fT COB Noise Figure NF RATINGS 200 83.3 MIN -65 -45 -30 -80 -50 -30 -5.0 TYP MAX UNIT V V V V V V V -15 nA 110 800 -90 -300 mV -250 -650 mV -700 mV -900 mV -600 -660 -750 mV -800 mV 150 MHz 6 pF 2 10 dB CLASSIFICATION OF hFE RANK hFE A 110 - 220 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw B 200 - 450 C 420 - 800 2 of 4 QW-R201-051.C Collector Current, IC (mA) Saturation Voltage, VBE(SAT), VCE(SAT) DC Current Gain, hFE Collector Current, IC (mA) Current Gain-Bandwidth Product,fT (MHz) Capacitance,C (pF) BC556/557/558 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw PNP SILICON TRANSISTOR TYPICAL CHARACTERISTICS QW-R201-051.C 3 of 4 BC556/557/558 PNP SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R201-051.C