Complementary N-P Channel Trench MOSFET General Description Features The MDS9652E uses advanced MagnaChip’s MOSFET Technology to provide low on-state resistance, high switching performance and excellent reliability N-Channel VDS = 30V ID = 7.2A @ VGS = 10V RDS(ON) <23m @ VGS = 10V <30m @ VGS = 4.5V P-Channel VDS = -30V ID = -6.1A @ VGS = -10V RDS(ON) <38m @ VGS = -10V <52m @ VGS = -4.5V Applications Inverters General purpose applications D1 5(D2) 6(D2) 7(D1) 8(D1) 4(G2) 3(S2) 2(G1) 1(S1) G1 D2 G2 S1 S2 Absolute Maximum Ratings (Ta =25oC unless otherwise noted) Rating Characteristics Symbol Drain-Source Voltage Gate-Source Voltage P-Ch VDSS 30 -30 V VGSS ±20 ±20 V 7.2 -6.1 A 4.6 -3.8 A 30 -30 A o Ta=25 C Continuous Drain Current Ta=100oC Pulsed Drain Current ID IDM o Ta=25 C Power Dissipation(1) Ta=100oC Single Pulse Avalanche Energy(2) PD EAS Junction and Storage Temperature Range Unit N-Ch 2 2 0.8 0.8 32 72 TJ, Tstg W mJ o -55~150 C Thermal Characteristics Device Symbol Rating Thermal Resistance, Junction-to-Ambient(Steady-State)(1) Characteristics N-Ch RθJA 62.5 Thermal Resistance, Junction-to-Case N-Ch RθJC 50 Thermal Resistance, Junction-to-Ambient(Steady-State) P-Ch RθJA 62.5 Thermal Resistance, Junction-to-Case P-Ch RθJC 50 o C/W (1) April. 2010. Version 2.0 Unit 1 MagnaChip Semiconductor Ltd. MDS9652E– Complementary N-P Channel Trench MOSFET MDS9652E Part Number Temp. Range Package Packing RoHS Status MDS9652EURH -55~150oC SOIC-8L Tape & Reel Halogen Free N-channel Electrical Characteristics (Ta =25oC unless otherwise noted) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BVDSS ID = 250μA, VGS = 0V 30 - - Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250μA 1.0 1.9 3.0 Drain Cut-Off Current IDSS VDS = 24V, VGS = 0V - Gate Leakage Current IGSS VGS = ±12V, VDS = 0V - - 10 VGS = 10V, ID = 7.2A - 15 23 VGS = 4.5V, ID = 5.0A - 19 30 VDS = 5V, ID = 7.2A - 20 - - 12.8 - - 1.9 - Drain-Source ON Resistance Forward Transconductance RDS(ON) gFS 1.0 V μA mΩ S Dynamic Characteristics Total Gate Charge Qg VDS = 15V, ID = 7.2A, VGS = 10V Gate-Source Charge Qgs Gate-Drain Charge Qgd - 2.7 - Input Capacitance Ciss - 635 - - 82 - Reverse Transfer Capacitance Crss VDS = 15V, VGS = 0V, f = 1.0MHz nC pF Output Capacitance Coss - 158 - Turn-On Delay Time td(on) - 4.2 - Turn-On Rise Time tr - 23.0 - Turn-Off Delay Time td(off) - 37.0 - - 22.0 - - 0.75 1.0 V - 17 - ns - 8 - nC Turn-Off Fall Time VGS = 10V ,VDS = 15V, RL = 2.2Ω, RGEN = 6Ω tf ns Drain-Source Body Diode Characteristics Source-Drain Diode Forward Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr IS = 1A, VGS = 0V IF = 7.2A, di/dt = 100A/μs Note : 1. Surface mounted FR-4 board with 2oz. Copper. 2. Starting TJ = 25°C, L = 1mH, IAS = 8A, VDD = 15V, VGS = 10V April. 2010. Version 2.0 2 MagnaChip Semiconductor Ltd. MDS9652E– Complementary N-P Channel Trench MOSFET Ordering Information Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BVDSS ID = -250μA, VGS = 0V -30 - - Gate Threshold Voltage VGS(th) VDS = VGS, ID = -250μA -1.0 -1.9 -3.0 Drain Cut-Off Current IDSS VDS = -24V, VGS = 0V - Gate Leakage Current IGSS VGS = ±12V, VDS = 0V - - ±10 VGS = -10V, ID = -6.1A - 23 38 VGS = -4.5V, ID = -5.0A - 33 52 VDS = -5V, ID = -6.1A - 15 - - 25.1 - - 4.1 - - 4.9 - - 1128 - Drain-Source ON Resistance Forward Transconductance RDS(ON) gFS -1.0 V μA mΩ S Dynamic Characteristics Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss VDS = -15V, ID = -6.1A, VGS = -10V VDS = -15V, VGS = 0V, f = 1.0MHz nC Reverse Transfer Capacitance Crss - 127 - Output Capacitance Coss - 218 - Turn-On Delay Time td(on) - 11.6 - - 20.8 - - 27.6 - - 11.6 - - -0.75 -1.0 V - 21.0 - ns - 13.5 - nC Turn-On Rise Time tr Turn-Off Delay Time td(off) Turn-Off Fall Time VGS = -10V ,VDS = -15V, RL = 15Ω, RGEN = 6Ω tf pF ns Drain-Source Body Diode Characteristics Source-Drain Diode Forward Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr IS = -1A, VGS = 0V IF = -6.1A, di/dt = 100A/μs Note : 1. Surface mounted RF4 board with 2oz. Copper. 2. Starting TJ = 25°C, L = 1mH, IAS = -12A, VDD = -15V, VGS = -10V April. 2010. Version 2.0 3 MagnaChip Semiconductor Ltd. MDS9652E– Complementary N-P Channel Trench MOSFET P-channel Electrical Characteristics (Ta =25oC unless otherwise noted) 40 50 5.0V 4.5V 10V 35 4.0V 30 40 RDS(ON) [mΩ ] 3.5V ID [A] 25 20 15 VGS=3.0V 30 VGS=4.5V 20 10 5 VGS=10V 10 0 0 1 2 3 4 0 5 5 10 15 VDS [V] 25 30 35 40 Fig.2 On-Resistance Variation with Drain Current and Gate Voltage Fig.1 On-Region Characteristics 70 1.8 60 1.6 50 1.4 1.2 VGS=10V ID=7.2A RDS(ON) [mΩ ] RDS(ON), (Normalized) Drain-Source On-Resistance [mΩ ] 20 ID [A] VGS=4.5V ID=5.0A 40 30 125 ℃ 1.0 20 25 0.8 ℃ 10 0.6 -50 0 -25 0 25 50 75 100 125 2 150 4 6 8 10 VGS [V] o TJ, Junction Temperature [ C] Fig.3 On-Resistance Variation with Temperature Fig.4 On-Resistance Variation with Gate to Source Voltage 20 10 *Note ; VDS=5.0V 1 15 0.1 -IS [A] ID [A] 0.01 10 1E-3 1E-4 5 25 125 ℃ 125 1E-5 ℃ 1E-6 0.0 0 0 1 2 3 4 5 ℃ 0.4 0.6 0.8 1.0 -VSD [V] VGS [V] Fig.5 Transfer Characteristics April. 2010. Version 2.0 0.2 25 ℃ Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature 4 MagnaChip Semiconductor Ltd. MDS9652E– Complementary N-P Channel Trench MOSFET N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 850 * Note ; ID = 7.2A 800 750 8 Ciss 700 Capacitance [pF] 650 VGS [V] 6 4 600 550 500 450 400 350 300 200 2 * Notes ; 1. VGS = 0 V 2. f = 1 MHz Coss 250 Crss 150 100 50 0 0 0 2 4 6 8 10 12 0 14 5 10 15 Fig.7 Gate Charge Characteristics 10 20 25 30 VDS [V] Qg [nC] Fig.8 Capacitance Characteristics 2 8 7 1 ms 10 1 6 10 ms 10 5 1s Operation in This Area is Limited by R DS(on) 0 ID [A] ID [A] 100 ms DC 4 3 10 -1 2 Single Pulse Rθ ja=62.5 /W Ta=25 1 ℃ ℃ 10 -2 10 -1 10 0 10 1 10 0 25 2 50 75 100 125 150 Ta [ ] VDS [V] ℃ Fig.10 Maximum Drain Current Vs. Ambient Temperature Fig.9 Maximum Safe Operating Area Zθ ja, Normalized Thermal Response [t] 1 10 0 10 D=0.5 0.2 0.1 -1 10 ※ Notes : 0.05 Duty Factor, D=t1/t2 PEAK TJ = PDM * Zθ Ja* Rθ Ja(t) + Ta RΘ JA=62.5 /W 0.02 ℃ 0.01 -2 10 single pulse -3 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 10 t1, Rectangular Pulse Duration [sec] Fig.11 Transient Thermal Response Curve April. 2010. Version 2.0 5 MagnaChip Semiconductor Ltd. MDS9652E– Complementary N-P Channel Trench MOSFET 900 10 20 70 -10.0V -5.0V -4.5V -4.0V 60 15 RDS(ON) [mΩ ] -ID [A] 50 -3.5V 10 40 VGS=-4.5V 30 VGS=-10V 20 5 VGS=-3.0V 10 0 0 1 2 3 4 0 5 0 5 10 15 -VDS [V] 25 30 -ID [A] Fig.13 On-Resistance Variation with Drain Current and Gate Voltage Fig.12 On-Region Characteristics 100 1.8 *Note ; ID=-6.1A 90 1.6 80 70 1.4 RDS(ON) [mΩ ] RDS(ON), (Normalized) Drain-Source On-Resistance [mΩ ] 20 VGS=-4.5V ID=-5.0A VGS=-10V ID=-6.1A 1.2 1.0 60 50 125 ℃ 40 30 20 25 ℃ 0.8 10 0.6 -50 0 -25 0 25 50 75 100 125 2 150 3 4 5 6 7 8 9 10 -VGS [V] TJ, Junction Temperature [ ] ℃ Fig.14 On-Resistance Variation with Temperature Fig.15 On-Resistance Variation with Gate to Source Voltage 10 20 * Note ; VDS=-5V 1 15 -IS [A] -ID [A] 0.1 10 0.01 5 125 0 0.0 0.5 1.0 1.5 2.0 2.5 25 ℃ 3.0 3.5 4.0 4.5 1E-4 0.0 5.0 -VGS [V] 25 ℃ ℃ 0.2 0.4 0.6 0.8 1.0 -VSD [V] Fig.16 Transfer Characteristics April. 2010. Version 2.0 125 1E-3 ℃ Fig.17 Body Diode Forward Voltage Variation with Source Current and Temperature 6 MagnaChip Semiconductor Ltd. MDS9652E– Complementary N-P Channel Trench MOSFET P-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1500 * Note : ID = -6.1A Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 1400 1300 8 Ciss 1200 Capacitance [pF] 1100 -VGS [V] 6 4 2 1000 900 800 700 600 500 ※ Notes ; 400 300 Crss 200 100 0 0 2 4 6 8 10 12 14 16 18 20 22 24 26 0 0 -Qg [nC] 5 10 15 20 25 30 -VDS [V] Fig.18 Gate Charge Characteristics 10 1. VGS = 0 V 2. f = 1 MHz Coss Fig.19 Capacitance Characteristics 7 2 6 1 ms 10 1 10 ms 5 100 ms 4 0 Operation in This Area is Limited by R DS(on) -ID [A] -ID [A] 1s 10 DC 3 2 10 -1 1 Single Pulse Rθ ja=62.5 /W Ta=25 ℃ ℃ 10 0 25 -2 10 -1 10 0 10 1 10 2 50 75 100 125 150 Ta [ ] ℃ -VDS [V] Fig.20 Maximum Safe Operating Area Fig.21 Maximum Drain Current vs. Ambient Temperature Zθ Ja, Normalized Thermal Response [t] 1 10 0 10 D=0.5 0.2 -1 0.1 * Notes : Duty Factor, D=t1/t2 PEAK TJ = PDM * Zθ JC* Rθ JC(t) + TC RΘ JA=62.5 /W 10 0.05 0.02 -2 ℃ 0.01 10 single pulse -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 10 t1, Rectangular Pulse Duration [s] Fig.22 Transient Thermal Response Curve April. 2010. Version 2.0 7 MagnaChip Semiconductor Ltd. MDS9652E– Complementary N-P Channel Trench MOSFET 10 8 Leads SOIC Dimensions are in millimeters unless otherwise specified April. 2010. Version 2.0 8 MagnaChip Semiconductor Ltd. MDS9652E– Complementary N-P Channel Trench MOSFET Physical Dimensions MDS9652E– Complementary N-P Channel Trench MOSFET Worldwide Sales Support Locations MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd. April. 2010. Version 2.0 9 MagnaChip Semiconductor Ltd.