SEMICONDUCTOR MJD117/L TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE. A FEATURES I C J Low Collector-Emitter Saturation Voltage. K Q Straight Lead (IPAK, "L" Suffix) O Complementary to MJD112/L. M B VCE=-4V, IC=-1A. E : hFE=1000(Min.), D High DC Current Gain. H MAXIMUM RATING (Ta=25 P F ) 2 L 3 SYMBOL RATING UNIT Collector-Base Voltage VCBO -100 V 1. BASE Collector-Emitter Voltage VCEO -100 V 3. EMITTER Emitter-Base Voltage VEBO -5 V Collector Current DC Pulse DC Collector Power Ta=25 Dissipation Tc=25 -50 mA 1.0 PC DPAK A -4 IB 2. COLLECTOR I A C J W 20 DIM A B C D E F G H I J K L P Q Storage Temperature Range Tj 150 Tstg -55 150 K Junction Temperature Q B Base Current -2 IC P H E G C F B 1 R1 R2 = 10kΩ = 0.6kΩ MILLIMETERS _ 0.2 6.60 + _ 0.2 6.10 + _ 0.2 5.0 + _ 1.10 + 0.2 _ 0.2 2.70 + _ 0.1 2.30 + 1.00 MAX _ 0.2 2.30 + _ 0.1 0.5 + _ 0.20 2.00 + _ 0.10 0.50 + _ 0.10 0.91+ _ 0.1 0.90 + _ 0.10 1.00 + 0.95 MAX D CHARACTERISTIC 1 F DIM A B C D E F H I J K L M O P Q F 2 L 3 MILLIMETERS _ 0.2 6.60 + _ 0.2 6.10 + _ 5.0 + 0.2 _ 0.2 1.10 + _ 0.6 9.50 + _ 0.1 2.30 + _ 0.1 0.76 + 1.0 MAX _ 0.2 2.30 + _ 0.1 0.5 + _ 2.0 + 0.2 _ 0.1 0.50 + _ 0.1 1.0 + 0.90 MAX 1. BASE 2. COLLECTOR 3. EMITTER E IPAK ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT V VCEO(SUS) IC=-30mA, IB=0 -100 - - ICEO VCE=-50V, IB=0 - - -20 ICBO VCB=-100V, IE=0 - - -20 Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -2 DC Current Gain hFE 500 - - VCE=-3V, IC=-2A 1,000 12,000 - Collector-Emitter Sustaining Voltage Collector Cut-off Current VCE=-3V, IC=-0.5A A mA Collector-Emitter Saturation Voltage VCE(sat) IC=-2A, IB=-8mA - - -2.0 V Base-Emitter On Voltage VBE(ON) VCE=-3V, IC=-2A - - -2.8 V 25 - - MHz - - 200 pF Current Gain Bandwidth Product Collector Output Capacitance 2003. 3. 27 Revision No : 4 fT Cob VCE=-10V, IC=0.75A, f=1MHz VCB=-10V, IE=0, f=0.1MHz 1/2 MJD117/L VCE(sat) , V BE(sat) - I C h FE - I C 5k SATURATION VOLTAGE VCE(sat) , V BE(sat) (V) 3k DC CURRENT GAIN h FE -10 VCE =-3V 1k 500 300 100 50 -0.01 -0.03 -0.1 -0.3 -1 -3 -3 VBE(sat) -1 VCE(sat) -0.5 -0.3 -0.1 -0.01 -5 -0.03 -0.1 -0.3 COLLECTOR CURRENT I C (A) C ob - VCB P C - Ta POWER DISSIPATION P C (W) 25 300 100 50 30 10 -0.1 -1 COLLECTOR CURRENT I C (mA) 500 CAPACITANCE C ob (pF) I C/IB =250 -5 -0.3 -1 -3 -10 -30 -50 COLLECTOR-BASE VOLTAGE VCB (V) -3 -5 1 Tc=25 C 2 Ta=25 C 1 20 15 10 5 2 0 0 50 100 150 200 CASE TEMPERATURE Ta ( C) SAFE OPERATING AREA COLLECTOR CURRENT I C (A) -10 I C MAX.(PULSED) * -5 -3 10 I C MAX. (CONTINUOUS) DC OPERATION Tc=25 C -1 1m 5m S* 0µ 50 0µ S* S* S* -0.5 -0.3 -0.1 * SINGLE NONREPETIVE PULSE Tc=25 C -0.05 -0.03 -0.01 CURVES MUST BE DREATED LINEARLY WITH INCREASE IN TEMPERATURE -1 -3 -10 -30 -100 -200 COLLECTOR-EMITTER VOLTAGE V CE (V) 2003. 3. 27 Revision No : 4 2/2