LESHAN RADIO COMPANY, LTD. Band-switching diode BA 891 FEATURES · Ultra small plastic SMD package · Low diode capacitance: max. 1.05 pF · Low diode forward resistance: max. 0.7 Ω · Small inductance. APPLICATIONS · Low loss band-switching in VHF television tuners · Surface mount band-switching circuits. DESCRIPTION The BA891 is a planar, high performance band-switching diode in the ultra small SOD523 SMD plastic package. 1 CATHODE 1 2 SOD523 SC-79 2 ANODE LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). I SYMBOL VR PARAMETER continuous reverse voltage IF P tot continuous forward current total power dissipation T stg Tj CONDITIONS MIN. – MAX. 35 UNIT V – – 100 715 mA mW storage temperature -65 +150 °C junction temperature -65 +150 °C T s =90°C ELECTRICAL CHARACTERISTICS T j = 25°C unless otherwise specified. SYMBOL VF PARAMETER forward voltage CONDITIONS I F =10 mA TYP. – MAX. 1 UNIT V IR Cd reverse current diode capacitance V R =30 V f = 1 MHz; note 1; see Fig.1 – 20 nA V R= 1 V V R= 3 V 0.8 0.65 1.05 0.9 pF pF f = 100 MHz; note 1; see Fig.2 I F = 3 mA 0.45 0.7 Ω 0.36 0.6 0.5 - Ω nH r D diode forward resistance I F = 10 mA L S series inductance Note 1. Guaranteed on AQL basis; inspection level S4, AQL 1.0. THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to soldering-point VALUE 85 UNIT K/W S21–1/2 LESHAN RADIO COMPANY, LTD. BA 891 10 1 r D( Ω) C d (pF) 0.8 0.6 1 0.4 0.2 f = 1 MHz; T j =25°C 0 0 10 20 V R (V) Fig.1 Diode capacitance as a function of reverse voltage; typical values. 30 f = 100 MHz; T j =25°C 10 -1 10 –1 1 10 I F (mA ) Fig.2 Diode forward resistance as a function of forward current; typical values. S21–2/2