AP9565GEH/J
RoHS-compliant Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ Lower On-resistance
G
▼ Fast Switching Characteristic
BVDSS
-40V
RDS(ON)
38mΩ
ID
-24A
S
Description
G
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
D
S
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP9565GEJ) is
available for low-profile applications.
G
D
S
TO-252(H)
TO-251(J)
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
-40
V
VGS
Gate-Source Voltage
+16
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V
-24
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V
-15
A
1
IDM
Pulsed Drain Current
-80
A
PD@TC=25℃
Total Power Dissipation
35.7
W
Linear Derating Factor
0.28
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
3.5
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)
62.5
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
110
℃/W
3
Data and specifications subject to change without notice
1
200903094
AP9565GEH/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
-40
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA
-
-0.02
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance2
VGS=-10V, ID=-12A
-
-
38
mΩ
VGS=-4.5V, ID=-8A
-
-
58
mΩ
-0.8
-
-2.5
V
VGS=0V, ID=-250uA
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
gfs
Forward Transconductance
VDS=-10V, ID=-16A
-
13
-
S
IDSS
Drain-Source Leakage Current
VDS=-40V, VGS=0V
-
-
-1
uA
Drain-Source Leakage Current (T j=125 C) VDS=-32V, VGS=0V
-
-
-250
uA
Gate-Source Leakage
VGS=+16V, VDS=0V
-
-
+30
uA
ID=-16A
-
10
16
nC
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-30V
-
2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
6
-
nC
VDS=-20V
-
8
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-1A
-
6
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-10V
-
28
-
ns
tf
Fall Time
RD=20Ω
-
16
-
ns
Ciss
Input Capacitance
VGS=0V
-
765
1230
pF
Coss
Output Capacitance
VDS=-25V
-
150
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
100
-
pF
Rg
Gate Resistance
f=1.0MHz
-
6
9
Ω
Min.
Typ.
IS=-16A, VGS=0V
-
-
-1.3
V
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=-16A, VGS=0V,
-
24
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
17
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9565GEH/J
80
60
-10V
-7.0V
-5.0V
-ID , Drain Current (A)
-10V
-7.0V
-5.0V
-4.5V
T C = 150 o C
-ID , Drain Current (A)
o
T C = 25 C
60
-4.5V
40
V G = -3.0 V
40
V G = -3.0 V
20
20
0
0
0
2
4
6
8
0
2
-V DS , Drain-to-Source Voltage (V)
4
6
8
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.8
120
I D = -16 A
V G = -10V
ID=-8A
T C =25 ℃
Normalized RDS(ON)
RDS(ON) (mΩ)
100
80
60
1.4
1.0
40
0.6
20
2
4
6
8
25
10
-V GS , Gate-to-Source Voltage (V)
75
100
125
150
o
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
20.0
60.0
15.0
50.0
T j =25 o C
RDS(ON) (mΩ)
T j =150 o C
-IS(A)
50
10.0
5.0
V GS =-4.5V
40.0
V GS =-10V
30.0
0.0
20.0
0
0.2
0.4
0.6
0.8
1
1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
0
10
20
30
40
-I D , Drain Current (A)
Fig 6. On-Resistance vs.
Drain Current
3
AP9565GEH/J
f=1.0MHz
1000
I D = - 16 A
V DS = - 30 V
10
C iss
8
C (pF)
-VGS , Gate to Source Voltage (V)
12
6
C oss
C rss
100
4
2
0
10
0
4
8
12
16
20
1
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
29
-V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
Normalized Thermal Response (Rthjc)
1
100us
-ID (A)
10
1ms
10ms
100ms
DC
1
o
T c =25 C
Single Pulse
DUTY=0.
0.2
0.1
0.1
0.0
PDM
t
0.0
T
0.0
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
SINGLE PULSE
0.01
0.1
0.1
1
10
100
0.00001
0.0001
-V DS , Drain-to-Source Voltage (V)
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
40
-ID , Drain Current (A)
V DS = -5V
VG
30
T j =25 o C
QG
T j =150 o C
-4.5V
QGS
20
QGD
10
Charge
Q
0
0
2
4
6
-V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4