Central CP392V Smal signal transistor npn - amp/switch transistor chip Datasheet

PROCESS
CP392V
Central
Smal Signal Transistor
TM
Semiconductor Corp.
NPN - Amp/Switch Transistor Chip
PROCESS DETAILS
Process
EPITAXIAL PLANAR
Die Size
11 x 11 MILS
Die Thickness
7.1 MILS
Base Bonding Pad Area
3.7 x 3.7 MILS
Emitter Bonding Pad Area
3.7 x 3.7 MILS
Top Side Metalization
Al - 30,000Å
Back Side Metalization
Au - 18,000Å
GEOMETRY
GROSS DIE PER 4 INCH WAFER
93,826
PRINCIPAL DEVICE TYPES
2N3904
CMKT3904
CMLT3904E
CMPT3904
CMPT3904E
CMST3904
CXT3904
CZT3904
R0
BACKSIDE COLLECTOR
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
R1 (28 -March 2005)
Central
TM
Semiconductor Corp.
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
PROCESS
CP392V
Typical Electrical Characteristics
R1 (28 -March 2005)
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