NTE NTE2413 Silicon pnp transistor general purpose, high voltage amp, (compl to nte2412) Datasheet

NTE2413
Silicon PNP Transistor
General Purpose, High Voltage Amp,
(Compl to NTE2412)
Description:
The NTE2413 is a silicon PNP transistor in an SOT–23 type surface mount package designed for use
primarily in telephone and professional communication equipment.
Absolute Maximum Ratings:
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V
Collector–Emitter Voltage (RBE = 2.7kΩ), VCER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Total Power Dissipation (TA ≤ +35°C, Note 1), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 310mW
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Thermal Resistance, Junction–to–Tab, RthJT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50K/W
Thermal Resistance, Tab–to–Soldering Points, RthTS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260K/W
Thermal Resistance, Soldering Points–to–Ambient (Note 1), RthSA . . . . . . . . . . . . . . . . . . . . 60K/W
Note 1. Mounted on a ceramic substrate 2.5cm2 x 0.7mm.
Electrical Characteristics: (TJ = +25°C unless otherwise specified)
Parameter
Collector Cutoff Current
Collector–Emitter Saturation Voltage
DC Current Gain
Transition Frequency
Capacitance
Symbol
Test Conditions
Min
Typ
Max
Unit
ICBO
VCB = 200V, IE = 0
–
–
10
nA
ICER
VCE = 250V, RBE = 2.7kΩ
–
–
50
nA
VCE = 200V, RBE = 2.7kΩ,
TJ = +150°C
–
–
10
µA
VCE(sat)
IC = 30mA, IB = 5mA
–
–
0.8
V
hFE
VCE = 20V, IC = 25mA
50
–
–
fT
VCE = 10V, IE = 10mA,
f = 35MHz
60
–
–
MHz
VCE = 30V, IC = 0, f = 1MHz
–
–
1.6
pF
Cre
.016 (0.48)
C
B
.098
(2.5)
Max
E
.037 (0.95)
.074 (1.9)
.118 (3.0) Max
.051
(1.3)
.043 (1.1)
.007 (0.2)