Microsemi JANTX2N3501 Npn bipolar transistor Datasheet

580 Pleasant St.
Watertown, MA 02172
PH: (617) 926-0404
FAX: (617) 924-1235
2N3501
Features
•
•
•
•
150 Volts
500mAmps
Meets MIL-S-19500/366
Collector-Base Voltage 150V
Collector Current: 500 mA
Fast Switching 1265 nS
NPN
BIPOLAR
TRANSISTOR
Maximum Ratings
RATING
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current—Continuous
Total Device Dissipation
o
@ T A = 25 C
o
Derate above 25 C
Total Device Dissipation
o
@ T C = 25 C
o
Derate above 25 C
Operating Temperature Range
Storage Temperature Range
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Mechanical Outline
Datasheet# MSC0282A 5/19/97
SYMBOL
MAX.
UNIT
VCEO
VCBO
VEBO
IC
PD
150
150
6.0
300
Vdc
Vdc
Vdc
mAdc
1.0
5.71
Watt
o
mW/ C
5.0
28.6
-55 to
+200
-55 to
+200
175
35
Watts
o
mW/ C
o
C
PD
TJ
TS
RθJA
RθJC
o
C
o
C/W
C/W
o
2N3501
Electrical Parameters (TA @ 25°°C unless otherwise specified)
CHARACTERISTICS
Off Characteristics
Collector-Emitter Breakdown Voltage(1)
(I C = 10 mAdc, I B = 0)
Collector-Base Breakdown Voltage
(I C = 10 µAdc, IE = 0)
Emitter-Base Breakdown Voltage
(I E = 10 µAdc, IC = 0)
Collector Cutoff Current
(V CB = 75 Vdc, I E = 0)
o
(V CB = 75 Vdc, I E = 0, TA = 150 C)
Emitter Cutoff Current
(V EB(off) = 4.0 Vdc, I C = 0)
D.C. Current Gain
(I C = 0.1 mAdc, V CE = 10 Vdc)
(I C = 1.0 mAdc, V CE = 10 Vdc)
(I C = 10 mAdc, V CE = 10 Vdc)(1)
(I C = 150 mAdc, V CE = 10 Vdc)(1)
(I c = 150 mAdc, V CE = 10Vdc) @ 55C
(I C = 300 mAdc, V CE = 10 Vdc)(1)
Collector-Emitter Saturation Voltage(1)
(I C = 10 mAdc, I B = 1.0 mAdc)
(I C = 150 mAdc, I B = 15 mAdc)
Base-Emitter Saturation Voltage(1)
(I C = 10 mAdc, I B = 1.0 mAdc)
(I C = 150 mAdc, I B = 15 mAdc)
Magnitude of common emitter small-signal short-circuit forward current
transfer ratio
(V CE = 20 Vdc, I C = 20 mAdc, f = 100 MHz)
Output Capacitance
(V CB = 10 Vdc, I E = 0, 100kHz < f < 1MHz)
Input Capacitance
(V EB = 0.5 Vdc, I C = 0, 100kHz < f < 100MHz)
Small -signal Current Gain
(I c = 10mAdc, V CE = 10Vdc, f = 1.0 kHz)
Noise figure
(V CE = 10Vdc, IC = 0.5mAdc; R g = 1kohms, f = 1MHz)
Noise figure
( V CE = 10Vdc, I C = 0.5mAdc; R g = 1kohms, f = 1MHz)
Turn - on time
( V EB = 12Vdc, I C = 150mAdc, I B1 = 15mAdc)
Turn - off time
( I C = 150mAdc, I B1 = IB2 = -15mAdc)
(1)
Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%
Datasheet# MSC0282A 5/19/97
SYMBOL
MIN.
TYP.
MAX.
150
--
--
150
--
--
6.0
--
--
---
---
0.05
50
--
--
25
UNIT
Vdc
BVCEO
Vdc
BVCBO
Vdc
BVEBO
µAdc
ICBO
nAdc
IEBO
--
hFE
35
50
75
100
45
20
-------
---300
--Vdc
VCE(Sat)
---
---
0.2
0.4
Vdc
VBE(Sat)
---
---
0.8
1.2
1.5
--
8
--
--
--
8.0
--
--
80
75
--
NF
300
16
dB
NF
6
dB
ton
115
nS
toff
1150
nS
/hfe/
pf
COBO
pf
CIBO
hfe
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