MBR2535CTG, MBR2545CTG Switch‐mode Power Rectifiers The MBR2535CTG/45CTG series uses the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art devices have the following features: SCHOTTKY BARRIER RECTIFIERS 30 AMPERES 35 and 45 VOLTS Features • • • • http://onsemi.com Guardring for Stress Protection Low Forward Voltage 175°C Operating Junction Temperature These are Pb-Free Devices* 1 2, 4 Mechanical Characteristics • • • • • 3 Case: Epoxy, Molded Epoxy Meets UL 94 V−0 @ 0.125 in Weight: 1.9 Grams (Approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds 4 1 2 3 TO−220 CASE 221A STYLE 6 MARKING DIAGRAM AY WW B25x5G AKA A Y WW B25x5 x G AKA = Assembly Location = Year = Work Week = Device Code = 3 or 4 = Pb−Free Package = Diode Polarity ORDERING INFORMATION Device Package Shipping MBR2535CTG TO−220 (Pb−Free) 50 Units/Rail MBR2545CTG TO−220 (Pb−Free) 50 Units/Rail *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2014 September, 2014 − Rev. 15 1 Publication Order Number: MBR2535CT/D MBR2535CTG, MBR2545CTG MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage MBR2535CTG MBR2545CTG VRRM VRWM VR V Average Rectified Forward Current (Rated VR, TC = 160°C) Per Device Per Diode IF(AV) Peak Repetitive Forward Current per Diode Leg (Rated VR, Square Wave, 20 kHz, TC = 150°C) IFRM Non-Repetitive Peak Surge Current per Diode Leg (Surge Applied at Rated Load Conditions, Halfwave, Single Phase, 60 Hz) IFSM Peak Repetitive Reverse Surge Current (2.0 s, 1.0 kHz) IRRM 1.0 A Storage Temperature Range Tstg −65 to +175 °C Operating Junction Temperature (Note 1) TJ −65 to +175 °C Voltage Rate of Change (Rated VR) dv/dt 10,000 V/s ESD Ratings: Machine Model = C Human Body Model = 3B ESD 35 45 A 30 15 A 30 A 150 V > 400 > 8000 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from Junction-to-Ambient: dPD/dTJ < 1/RJA. THERMAL CHARACTERISTICS (Per Leg) Characteristic Symbol Value RJC RJA 1.5 50 Unit °C/W Thermal Resistance, Junction-to-Case Junction-to-Ambient (Note 2) 2. When mounted using minimum recommended pad size on FR−4 board. ELECTRICAL CHARACTERISTICS (Per Diode) Symbol Characteristic Condition Min Typ Max Unit VF Instantaneous Forward Voltage (Note 3) IF = 15 Amp, TJ = 25°C IF = 15 Amp, TJ = 125°C IF = 30 Amp, TJ = 25°C IF = 30 Amp, TJ = 125°C − − − − − 0.50 − 0.65 0.62 0.57 0.82 0.72 V IR Instantaneous Reverse Current (Note 3) Rated dc Voltage, TJ = 25°C Rated dc Voltage, TJ = 125°C − − − 9.0 0.2 25 mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width = 300 s, Duty Cycle ≤ 2.0%. http://onsemi.com 2 IF, INSTANTANEOUS FORWARD CURRENT (AMPS) MBR2535CTG, MBR2545CTG 1000 200 100 40 20 10 4.0 2.0 1.0 0.4 0.2 0.1 0.04 0.02 0.01 0.004 0.002 10 150°C 1.0 25°C 0.1 0 0.2 0.4 0.6 0.8 1.2 1.0 1.4 1.6 100°C 75°C 25°C 0 1.8 10 20 30 50 40 VR, REVERSE VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage, Per Leg Figure 2. Typical Reverse Current, Per Leg I F(AV) , AVERAGE FORWARD CURRENT (AMPS) 44 40 36 32 dc 28 24 SQUARE WAVE 20 16 12 RATED VOLTAGE APPLIED RJC = 1.5°C/W 110 125°C VF , INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 48 8.0 4.0 0 TJ = 150°C IR , REVERSE CURRENT (mA) TJ = 125°C 120 130 140 150 160 170 48 RATED VR APPLIED 44 40 36 RJA = 16°C/W (With TO-220 Heat Sink) RJA = 60°C/W (No Heat Sink) dc 32 28 24 20 16 SQUARE WAVE 12 8.0 dc 4.0 0 180 SQUARE WAVE 0 20 40 60 80 100 120 140 160 TC, CASE TEMPERATURE (°C) TA, AMBIENT TEMPERATURE (°C) Figure 3. Current Derating, Per Device Figure 4. Current Derating, Per Device PF(AV) , AVERAGE POWER DISSIPATION (WATTS) IF(AV) , AVERAGE FORWARD CURRENT (AMPS) 100 32 SQUARE WAVE I (RESISTIVELOAD) PK + I 28 AV 24 I (CAPACITATIVELOAD) PK + 5.0 I 20 dc AV 16 10 12 20 8.0 TJ = 125°C 4.0 0 0 4.0 8.0 12 16 20 24 28 32 IF, AVERAGE FORWARD CURRENT (AMPS) Figure 5. Forward Power Dissipation http://onsemi.com 3 36 40 180 MBR2535CTG, MBR2545CTG PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AH −T− B SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D INCHES MIN MAX 0.570 0.620 0.380 0.415 0.160 0.190 0.025 0.038 0.142 0.161 0.095 0.105 0.110 0.161 0.014 0.024 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.53 4.07 4.83 0.64 0.96 3.61 4.09 2.42 2.66 2.80 4.10 0.36 0.61 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 N STYLE 6: PIN 1. 2. 3. 4. 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