MJW21195 (PNP) MJW21196 (NPN) Preferred Devices Silicon Power Transistors The MJW21195 and MJW21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. http://onsemi.com Features • • • • • 16 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS, 200 WATTS Total Harmonic Distortion Characterized High DC Current Gain − hFE = 20 Min @ IC = 8 Adc Excellent Gain Linearity High SOA: 2.25 A, 80 V, 1 Second Pb−Free Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage VCEO 250 Vdc Collector−Base Voltage VCBO 400 Vdc Emitter−Base Voltage VEBO 5.0 Vdc Collector−Emitter Voltage − 1.5 V VCEX 400 Vdc IC 16 30 Adc Base Current − Continuous IB 5.0 Adc Total Power Dissipation @ TC = 25°C Derate Above 25°C PD 200 1.43 W W/°C TJ, Tstg − 65 to +150 °C Symbol Max Unit RqJC 0.7 °C/W 40 °C/W Collector Current Collector Current − Continuous − Peak (Note 1) Operating and Storage Junction Temperature Range 1 2 TO−247 CASE 340L 3 MARKING DIAGRAM MJW2119x AYWWG THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Case Thermal Resistance, Junction−to−Ambient RqJA 1 BASE 3 EMITTER 2 COLLECTOR Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%. x A Y WW G = 5 or 6 = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Device MJW21195 MJW21195G MJW21196 MJW21196G *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006 January, 2006 − Rev. 2 1 Package Shipping TO−247 30 Units/Rail TO−247 (Pb−Free) 30 Units/Rail TO−247 30 Units/Rail TO−247 (Pb−Free) 30 Units/Rail Preferred devices are recommended choices for future use and best overall value. Publication Order Number: MJW21195/D MJW21195 (PNP) MJW21196 (NPN) ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typical Max Unit VCEO(sus) 250 − − Vdc Collector Cutoff Current (VCE = 200 Vdc, IB = 0) ICEO − − 100 mAdc Emitter Cutoff Current (VCE = 5 Vdc, IC = 0) IEBO − − 50 mAdc Collector Cutoff Current (VCE = 250 Vdc, VBE(off) = 1.5 Vdc) ICEX − − 50 mAdc 4.0 2.25 − − − − 20 8 − − 80 − − − 2.0 − − − − 1.0 3 OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (IC = 100 mAdc, IB = 0) SECOND BREAKDOWN Second Breakdown Collector Current with Base Forward Biased (VCE = 50 Vdc, t = 1 s (non−repetitive) (VCE = 80 Vdc, t = 1 s (non−repetitive) IS/b Adc ON CHARACTERISTICS hFE DC Current Gain (IC = 8 Adc, VCE = 5 Vdc) (IC = 16 Adc, IB = 5 Adc) Base−Emitter On Voltage (IC = 8 Adc, VCE = 5 Vdc) VBE(on) Collector−Emitter Saturation Voltage (IC = 8 Adc, IB = 0.8 Adc) (IC = 16 Adc, IB = 3.2 Adc) VCE(sat) Vdc Vdc DYNAMIC CHARACTERISTICS Total Harmonic Distortion at the Output VRMS = 28.3 V, f = 1 kHz, PLOAD = 100 WRMS (Matched pair hFE = 50 @ 5 A/5 V) THD hFE unmatched hFE matched Current Gain Bandwidth Product (IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 1 MHz) http://onsemi.com 2 % − 0.8 − − 0.08 − fT 4 − − MHz Cob − − 500 pF MJW21195 (PNP) MJW21196 (NPN) TYPICAL CHARACTERISTICS NPN MJW21196 6.0 F T, CURRENT BANDWIDTH PRODUCT (MHz) F T, CURRENT BANDWIDTH PRODUCT (MHz) PNP MJW21195 6.5 VCE = 10 V 5.5 5.0 VCE = 5 V 4.5 4.0 3.5 TJ = 25°C ftest = 1 MHz 3.0 2.5 2.0 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) 10 7.5 7.0 6.5 6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 VCE = 10 V VCE = 5 V TJ = 25°C ftest = 1 MHz 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) Figure 1. Typical Current Gain Bandwidth Product Figure 2. Typical Current Gain Bandwidth Product PNP MJW21195 NPN MJW21196 1000 h FE , DC CURRENT GAIN h FE , DC CURRENT GAIN 1000 TJ = 100°C 100 25°C −25 °C 10 VCE = 20 V 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) 25°C −25 °C 10 100 TJ = 100°C 100 VCE = 20 V 0.1 Figure 3. DC Current Gain, VCE = 20 V 1.0 10 IC, COLLECTOR CURRENT (AMPS) PNP MJW21195 NPN MJW21196 1000 h FE , DC CURRENT GAIN h FE , DC CURRENT GAIN 100 Figure 4. DC Current Gain, VCE = 20 V 1000 TJ = 100°C 100 25°C −25 °C 10 10 VCE = 5 V 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) 25°C −25 °C 10 100 TJ = 100°C 100 VCE = 5 V 0.1 Figure 5. DC Current Gain, VCE = 5 V 1.0 10 IC, COLLECTOR CURRENT (AMPS) Figure 6. DC Current Gain, VCE = 5 V http://onsemi.com 3 100 MJW21195 (PNP) MJW21196 (NPN) TYPICAL CHARACTERISTICS PNP MJW21195 NPN MJW21196 30 2.0 A 25 IC , COLLECTOR CURRENT (A) IC , COLLECTOR CURRENT (A) 30 1.5 A 20 1.0 A 15 IB = 0.5 A 10 5.0 0 5.0 10 15 20 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) IB = 0.5 A 15 10 5.0 0 25 TJ = 25°C 0 5.0 10 15 20 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 7. Typical Output Characteristics Figure 8. Typical Output Characteristics PNP MJW21195 NPN MJW21196 2.5 2.0 1.5 VBE(sat) 1.0 0.5 1.0 1.0 10 IC, COLLECTOR CURRENT (AMPS) VBE(sat) 0.8 0.6 0.4 VCE(sat) 0.2 VCE(sat) 0.1 TJ = 25°C IC/IB = 10 1.2 0 100 0.1 Figure 9. Typical Saturation Voltages 1.0 10 IC, COLLECTOR CURRENT (AMPS) PNP MJW21195 NPN MJW21196 VBE(on) , BASE−EMITTER VOLTAGE (VOLTS) VBE(on) , BASE−EMITTER VOLTAGE (VOLTS) 100 Figure 10. Typical Saturation Voltages 10 TJ = 25°C 10 TJ = 25°C 1.0 1.0 VCE = 20 V VCE = 5 V 0.1 25 1.4 TJ = 25°C IC/IB = 10 SATURATION VOLTAGE (VOLTS) SATURATION VOLTAGE (VOLTS) 1.0 A 20 3.0 0 1.5 A 25 TJ = 25°C 0 2.0 A 0.1 1.0 10 0.1 100 VCE = 20 V VCE = 5 V 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 11. Typical Base−Emitter Voltage Figure 12. Typical Base−Emitter Voltage http://onsemi.com 4 100 MJW21195 (PNP) MJW21196 (NPN) There are two limitations on the power handling ability of a transistor; average junction temperature and secondary breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 13 is based on TJ(pk) = 150°C; TC is variable depending on conditions. At high case temperatures, thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second breakdown. TYPICAL CHARACTERISTICS NPN MJW21196 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) PNP MJW21195 100 10 ms 100 ms 10 1 Sec 1 0.1 100 10 ms 100 ms 10 1 Sec 1 0.1 1 10 100 1000 1 10 Figure 13. Active Region Safe Operating Area Figure 14. Active Region Safe Operating Area 10000 Cib Cib C, CAPACITANCE (pF) C, CAPACITANCE (pF) 1000 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) 10000 1000 Cob 1000 TJ = 25°C ftest = 1 MHz TJ = 25°C ftest = 1 MHz 100 100 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) 0.1 1.0 10 100 100 0.1 Cob 1.0 10 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 15. MJW21195 Typical Capacitance Figure 16. MJW21196 Typical Capacitance http://onsemi.com 5 100 MJW21195 (PNP) MJW21196 (NPN) 1.2 T , TOTAL HARMONIC HD DISTORTION (%) 1.1 1.0 0.9 0.8 0.7 0.6 10 100 1000 10000 100000 FREQUENCY (Hz) Figure 17. Typical Total Harmonic Distortion +50 V AUDIO PRECISION MODEL ONE PLUS TOTAL HARMONIC DISTORTION ANALYZER SOURCE AMPLIFIER 50 W DUT 0.5 W 0.5 W DUT −50 V Figure 18. Total Harmonic Distortion Test Circuit http://onsemi.com 6 8.0 W MJW21195 (PNP) MJW21196 (NPN) PACKAGE DIMENSIONS TO−247 PSI CASE 340L−02 ISSUE D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. −T− C −B− E U L N 4 A 1 2 3 −Q− 0.63 (0.025) P M T B M −Y− K W J F 2 PL MILLIMETERS MIN MAX 20.32 21.08 15.75 16.26 4.70 5.30 1.00 1.40 2.20 2.60 1.65 2.13 5.45 BSC 1.50 2.49 0.40 0.80 20.06 20.83 5.40 6.20 4.32 5.49 −−− 4.50 3.55 3.65 6.15 BSC 2.87 3.12 INCHES MIN MAX 0.800 8.30 0.620 0.640 0.185 0.209 0.040 0.055 0.087 0.102 0.065 0.084 0.215 BSC 0.059 0.098 0.016 0.031 0.790 0.820 0.212 0.244 0.170 0.216 −−− 0.177 0.140 0.144 0.242 BSC 0.113 0.123 H G D 3 PL 0.25 (0.010) DIM A B C D E F G H J K L N P Q U W M Y Q S ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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