Features • Operating Voltage: 3.3V • Access Time: 40 ns • Very Low Power Consumption • • • • • • • • – Active: 180 mW (Max) – Standby: 70 µW (Typ) Wide Temperature Range: -55°C to +125°C 400 Mils Width Package TTL Compatible Inputs and Outputs Asynchronous Designed on 0.35 Micron Process Latch-up Immune 200 Krads capability SEU LET Better Than 3 MeV Description The M65609E is a very low power CMOS static RAM organized as 131,072 x 8 bits. Atmel brings the solution to applications where fast computing is as mandatory as low consumption, such as aerospace electronics, portable instruments, or embarked systems. Utilizing an array of six transistors (6T) memory cells, the M65609E combines an extremely low standby supply current (Typical value = 20 µA) with a fast access time at 40 ns over the full military temperature range. The high stability of the 6T cell provides excellent protection against soft errors due to noise. Rad. Hard 128K x 8 3.3-volt Very Low Power CMOS SRAM M65609E The M65609E is processed according to the methods of the latest revision of the MIL STD 883 (class B or S), ESA SCC 9000 or QML. It is produced on the same process as the MH1RT sea of gates series. Rev. 4158D–AERO–06/02 1 Block Diagram Pin Configuration 32 pins Flatpack 400 MILS Pin Description Table 1. Pin Names 2 Name Description A0 - A16 Address Inputs I/O1 - I/O8 Data Input/Output CS1 Chip Select 1 CS2 Chip Select 2 WE Write Enable OE Output Enable VCC Power GND Ground M65609E 4158D–AERO–06/02 M65609E Table 2. Truth Table Note: CS1 CS2 WE OE Inputs/ Outputs H X X X Z Deselect/ Power-down X L X X Z Deselect/ Power-down L H H L Data Out Read L H L X Data In Write L H H H Z Mode Output Disable L = low, H = high, X = H or L, Z = high impedance. 3 4158D–AERO–06/02 Electrical Characteristics Absolute Maximum Ratings Supply Voltage to GND Potential ............................ -0.5V + 5V *NOTE: DC Input Voltage.............................. GND - 0.3V to VCC + 0.3 DC Output Voltage High Z State ...... GND - 0.3V to VCC + 0.3 Storage Temperature .................................... -65°C to + 150°C Output Current Into Outputs (Low) ............................... 20 mA Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. Electro Statics Discharge Voltage............................... > 2001V (MIL STD 883D Method 3015.3) Military Operating Range Operating Voltage Operating Temperature 3.3V + 0.3V -55°C to + 125°C Recommended DC Operating Conditions Parameter Description VCC Supply voltage Gnd Ground Min Typ Max Unit 3 3.3 3.6 V 0.0 0.0 0.0 V VIL Input low voltage GND - 0.3 0.0 0.8 V VIH Input high voltage 2.2 – VCC + 0.3 V Description Min Typ Max Unit Input low voltage – – 8 pF Output high voltage – – 8 pF Capacitance Parameter CIN (1) COUT(1) Note: 4 1. Guaranteed but not tested. M65609E 4158D–AERO–06/02 M65609E DC Parameters DC Test Conditions Parameter IIX (1) IOZ (1) 1. 2. 3. Description Minimum Typical Maximum Unit Input leakage current -1 – 1 µA Output leakage current -1 – 1 µA VOL (2) Output low voltage - – 0.4 V VOH (3) Output high voltage 2.4 – – V Gnd < Vin < VCC, Gnd < Vout < VCC Output Disabled. VCC min. IOL = 1 mA. VCC min. IOH = -0.5 mA. Consumption 1. 2. 3. Symbol Description 65609E-40 Unit Value ICCSB (1) Standby supply current 2.5 mA max ICCSB 1 (2) Standby supply current 1.5 mA max ICCOP (3) Dynamic operating current 50 mA max CS1 > VIH or CS2 < VIL and CS1 < VIL. CS1 > VCC - 0.3V or, CS2 < Gnd + 0.3V and CS1 < 0.2V F = 1/TAVAV, I OUT = 0 mA, W = OE = VIH, Vin = Gnd or VCC, VCC max. 5 4158D–AERO–06/02 Write Cycle Symbol Note: Parameter 65609E-40 Unit Value tAVAW Write cycle time 35 ns min tAVWL Address set-up time 0 ns min tAVWH Address valid to end of write 28 ns min tDVWH Data set-up time 28 ns min tE1LWH CS1 low to write end 28 ns min tE2HWH CS2 high to write end 28 ns min tWLQZ Write low to high Z (1) 15 ns max tWLWH Write pulse width 28 ns min tWHAX Address hold from to end of write +3 ns min tWHDX Data hold time 0 ns min tWHQX Write high to low Z (1) 0 ns min 1. Parameters guaranteed, not tested, with 5 pF output loading (see Section “AC Test Conditions” Figure 2). Read Cycle Symbol Note: 6 Parameter 65609E-40 Unit Value tAVAV Read cycle time 40 ns min tAVQV Address access time 40 ns max tAVQX Address valid to low Z 3 ns min tE1LQV Chip-select1 access time 40 ns max tE1LQX CS1 low to low Z (1) 3 ns min tE1HQZ CS1 high to high Z (1) 15 ns max tE2HQV Chip-select2 access time 40 ns max tE2HQX CS2 high to low Z (1) 3 ns min tE2LQZ CS2 low to high Z (1) 15 ns max tGLQV Output Enable access time 12 ns max tGLQX OE low to low Z (1) 0 ns min tGHQZ OE high to high Z (1) 10 ns max 1. Parameters guaranteed, not tested, with 5 pF output loading (seeSection “AC Test Conditions” Figure 2). M65609E 4158D–AERO–06/02 M65609E AC Parameters AC Test Conditions Input Pulse Levels: ....................................................... GND to 3.0V Input Rise/Fall Times: .................................................. 5 ns Input Timing Reference Levels: ................................... 1.5V Output loading IOL/IOH (see figure 1 and 2)................ +30 pF AC Test Loads Waveforms Figure 1 Figure 2 Figure 3 R1 2552 R1 2552 3.3V 3.3V 2824 2824 1340 V 7 4158D–AERO–06/02 Data Retention Mode Atmel CMOS RAM’s are designed with battery backup in mind. Data retention voltage and supply current are guaranteed over temperature. The following rules ensure data retention: 1. During data retention CS must be held high within VCC to VCC - 0.2V or chip select BS must be held down within GND to GND +0.2V. 2. Output Enable (OE) should be held high to keep the RAM outputs high impedance, minimizing power dissipation. 3. During power-up and power-down transitions CS and OE must be kept between VCC + 0.3V and 70% of VCC, or with BS between GND and GND -0.3V. 4. The RAM can begin operation > t R ns after VCC reaches the minimum operation voltages (3V). Figure 1. Data Retention Timing 3V 3V BS Data Retention Characteristics Parameter Description Min Typical TA = 25°C Max Unit VCCDR VCC for data retention 2.0 – – V TCDR Chip deselect to data retention time 0.0 – – ns tR Operation recovery time tAVAV(1) – – ns ICCDR1 (2) Data retention current at 2.0V – 0.010 1.0 mA Notes: 8 1. TAVAV = Read Cycle Time 2. CS1 = VCC or CS2 = CS1 = GND, VIN = GND/VCC. M65609E 4158D–AERO–06/02 M65609E Write Cycle 1. WE Controlled. OE High During Write Write Cycle 2. WE Controlled. OE Low 9 4158D–AERO–06/02 Write Cycle 3. CS1 or CS2 Controlled(1) Note: 10 1. The internal write time of the memory is defined by the overlap of CS1 LOW and CS2 HIGH and W LOW. Both signals must be activated to initiate a write and either signal can terminate a write by going in activated. The data input setup and hold timing should be referenced to the actived edge of the signal that terminates the write. Data out is high impedance if OE = VIH. M65609E 4158D–AERO–06/02 M65609E Read Cycle nb 1 Read Cycle nb 2 Read Cycle nb 3 11 4158D–AERO–06/02 Ordering Information Part Number Temperature Range Speed Package Flow MMDJ-65609EV-40 -55 to +125°C 40 ns FP32.4 Standard Mil MMDJ-65609EV-40MQ -55 to +125°C 40 ns FP32.4 QML Q MMDJ-65609EV-40-E 25°C 40 ns FP32.4 Engineering Samples (1) -55 to +125°C 40 ns FP32.4 MIL 883 B (1) -55 to +125°C 40 ns FP32.4 MIL 883 S 25°C 40 ns Die Engineering Samples -55 to +125°C 40 ns Die QML Q MMDJ-65609EV-40/883 SMDJ-65609EV-40/883 MM0-65609EV-40-E MM0-65609EV-40MQ Note: 12 1. Contact Atmel for availability. M65609E 4158D–AERO–06/02 M65609E Package Drawing 32-pin Flat Pack (400 Mils) 13 4158D–AERO–06/02 Atmel Headquarters Atmel Operations Corporate Headquarters Memory 2325 Orchard Parkway San Jose, CA 95131 TEL 1(408) 441-0311 FAX 1(408) 487-2600 Europe Atmel Sarl Route des Arsenaux 41 Case Postale 80 CH-1705 Fribourg Switzerland TEL (41) 26-426-5555 FAX (41) 26-426-5500 Asia Room 1219 Chinachem Golden Plaza 77 Mody Road Tsimhatsui East Kowloon Hong Kong TEL (852) 2721-9778 FAX (852) 2722-1369 Japan 9F, Tonetsu Shinkawa Bldg. 1-24-8 Shinkawa Chuo-ku, Tokyo 104-0033 Japan TEL (81) 3-3523-3551 FAX (81) 3-3523-7581 2325 Orchard Parkway San Jose, CA 95131 TEL 1(408) 441-0311 FAX 1(408) 436-4314 RF/Automotive Theresienstrasse 2 Postfach 3535 74025 Heilbronn, Germany TEL (49) 71-31-67-0 FAX (49) 71-31-67-2340 Microcontrollers 2325 Orchard Parkway San Jose, CA 95131 TEL 1(408) 441-0311 FAX 1(408) 436-4314 La Chantrerie BP 70602 44306 Nantes Cedex 3, France TEL (33) 2-40-18-18-18 FAX (33) 2-40-18-19-60 ASIC/ASSP/Smart Cards Zone Industrielle 13106 Rousset Cedex, France TEL (33) 4-42-53-60-00 FAX (33) 4-42-53-60-01 1150 East Cheyenne Mtn. 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