Microsemi MSASC25W45KR Low leakage schottky diode Datasheet

2830 S. Fairview St.
Santa Ana, CA 92704
PH: (714) 979-8220
FAX: (714) 966-5256
Features
•
•
•
•
•
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Tungsten schottky barrier
Oxide passivated structure for very low leakage currents
Guard ring protection for increased reverse energy capability
Epitaxial structure minimizes forward voltage drop
Hermetically sealed, low profile ceramic surface mount power package
Low package inductance
• Very low thermal resistance
• Available as standard polarity (strap-to-anode, 1N6816) and reverse
polarity (strap-to-cathode: 1N6816R)
MSASC25W45K
(1N6816)
MSASC25W45KR
(1N6816R)
Maximum Ratings @ 25°C (unless otherwise specified)
DESCRIPTION
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current, Tc≤ 145°C
derating, forward current, Tc≥ 145°C
Nonrepetitive Peak Surge Current, tp= 8.3 ms, half-sinewave
Peak Repetitive Reverse Surge Current, tp= 1µs, f= 1kHz
Junction Temperature Range
Storage Temperature Range
Thermal Resistance, Junction to Case:
1N6816
1N6816R
45 Volts
25 Amps
LOW LEAKAGE
SCHOTTKY DIODE
SYMBOL
MAX.
UNIT
VRRM
VRWM
VR
IF(ave)
dIF/dT
IFSM
IRRM
Tj
Tstg
θJC
45
45
45
25
(3.3)
125
2
-55 to +175
-55 to +175
1.25
1.35
Volts
Volts
Volts
Amps
Amps/°C
Amps
Amp
°C
°C
°C/W
Mechanical Outline
ThinKey™ 2
Datasheet# MSC1033A
MSASC25W45K (1N6816)
MSASC25W45KR (1N6816R)
Electrical Parameters
DESCRIPTION
Reverse (Leakage)
Current
Forward Voltage
pulse test,
pw= 300 µs
d/c≤ 2%
Junction Capacitance
Breakdown Voltage
Datasheet# MSC1033A
SYMBOL
IR25
IR125
VF1
VF2
VF3
VF4
VF5
VF6
Cj1
Cj2
BVR
CONDITIONS
VR= 45 Vdc, Tc= 25°C
VR= 45 Vdc, Tc= 125°C
IF= 5A, Tc= 25°C
IF= 10A, Tc= 25°C
IF= 20A, Tc= 25°C
IF= 50A, Tc= 25°C
IF= 10A, Tc= -55°C
IF= 10A, Tc= 125°C
VR= 10 Vdc
VR= 5 Vdc
IR= 1 mA, Tc= 25°C
IR= 1 mA, Tc= -55°C
MIN
45
TYP.
5
1.5
540
590
680
850
680
500
525
725
55
50
MAX
300
10
600
675
775
775
600
UNIT
µA
mA
mV
mV
mV
mV
mV
mV
pF
pF
V
V
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