RoHS MBR2090CT THRU MBR20200CT COMPLIANT 肖特基二极管SCHOTTKY Diodes ■外形尺寸和印记 Features 耐正向浪涌电流能力高 High surge forward current capability ● 低功耗，大电流 Low Power loss, High efficiency ● Io 20.0A 90-200V ● VRRM Outline Dimensions and Mark B A 0 2 2 O T ■特征 ● .17(4.31) .131(3.34) .429(10.9) MAX .129(3.27) .087(2.22) .200(5.10) .159(4.04) .055(1.40) .045(1.14) .61(15.5) .571(14.5) PIN1 2 3 .126(3.19) .084(2.14) .176(4.46) .124(3.16) .576(14.62) .514(13.06) .037(0.94) .027(0.68) Applications ■用途 ● 快速整流用 High speed switching DIA .121(3.07) .079(2.01) .025(0.64) .011(0.28) .121(3.07) .079(2.01) PIN1 PIN2 CASE PIN3 ■极限值（绝对最大额定值） Dimensions in inches and (millimeters) Limiting Values（Absolute Maximum Rating） 参数名称 Item 符号 单位 Symbol Unit 反向重复峰值电压 Repetitive Peak Reverse Voltage 平均整流输出电流 Average Rectified Output Current 正向（不重复）浪涌电流 Surge(Non-repetitive)Forward Current 正向浪涌电流的平方对电流浪涌持 续 时间的积分值 Current Squared Time 贮存温度 Storage Temperature 结温 Junction Temperature VRRM V Io A IFSM A MBR 条件 Conditions 2090CT 20100CT 20150CT 20200CT 90 100 150 200 正弦半波60Hz，电阻负载，Tc(Fig.1) 60HZ Half-sine wave, Resistance load, Tc(Fig.1) 60HZ正弦波，一个周期，Ta=25℃ 60HZ sine wave, 1 cycle, Ta=25℃ 20 150 1ms≤t＜8.3ms Tj=25℃,单个二极管 A2s 1ms≤t＜8.3ms Tj=25℃,Rating of per diode I2t Tstg Tj 94 -55 ~ +150 ℃ ℃ 在正向直流条件下，没有施加反向压降， 通电≤1h（图示1）① IN DC Forward Mode-Forward Operations，without reverse bias, t ≤1 h (Fig. 1)① -55 ~ +150 ■电特性 （Ta=25℃ 除非另有规定） Electrical Characteristics（Ta=25℃ Unless otherwise specified） 参数名称 Item 正向峰值电压 Peak Forward Voltage 反向峰值电流 Peak Reverse Current 热阻 Thermal Resistance 符号 Symbol VFM 单位 Unit V IRRM1 IRRM2 RθJ-C mA ℃/W MBR 测试条件 Test Condition 2090CT I FM =10A VRM =VRRM 20100CT 0.85 20150CT 20200CT 0.9 0.95 Ta=25℃ 0.05 Ta=100℃ 1 结和壳之间 Between junction and case 2.0 NOTE ■ 备注 ①Meets the requirements of IEC 61215 Ed. 2 bypass diode thermal test. S-B120 Rev.1.1, 29-Nov-14 扬州扬杰电子科技股份有限公司 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com MBR2090CT THRU MBR20200CT ■ 特性曲线（典型） Characteristics(Typical) 图2：耐正向浪涌电流曲线 FIG2:Surge Forward Current Capadility IFSM(A) Io(A) 图1：正向电流降额曲线 FIG1:Forward Current Derating Curve 28.0 24.0 175 150 20.0 125 16.0 TC measure point IN DC 12.0 8.3ms Single Half Since-Wave JEDEC Method 100 8.0 75 4.0 50 0 50 0 150 Tc(℃) 100 25 1 2 5 10 20 50 100 Number of Cycles at 60Hz 60 IRRM(uA) IF(A) 图3：正向电压曲线 FIG3:Instantaneous Forward Voltage 40 20 图4：反向电流曲线 FIG4:Typical Reverse Characteristics 1000 Tj=100 ℃ 90~100V 100 10 5.0 150V 10 200V 1.0 1.0 0.5 Tj=25℃ 0.2 0.1 Ta=25℃ 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 VF(V) 0.1 0 20 40 60 80 100 V RRM (%) S-B120 Rev.1.1, 29-Nov-14 扬州扬杰电子科技股份有限公司 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com